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    Etching of silicon dioxide selectively to silicon nitride and polysilicon
    17.
    发明授权
    Etching of silicon dioxide selectively to silicon nitride and polysilicon 失效
    二氧化硅选择性地蚀刻到氮化硅和多晶硅

    公开(公告)号：US5505816A

    公开(公告)日：1996-04-09

    申请号：US168887

    申请日：1993-12-16

    申请人： Michael S. Barnes ,  John H. Keller ,  William M. Holber ,  Tina J. Cotler ,  Jonathan D. Chapple-Sokol ,  Dragan Podlesnik

    发明人： Michael S. Barnes ,  John H. Keller ,  William M. Holber ,  Tina J. Cotler ,  Jonathan D. Chapple-Sokol ,  Dragan Podlesnik

    IPC分类号： H01L21/311 ,  H01L21/00

    CPC分类号： H01L21/31116 ,  Y10S438/906

    摘要： Silicon dioxide on a substrate is directionally etched using a hydrogen halide plasma which is created within an etch chamber. The method selectively etches silicon dioxide relative to polysilicon and silicon nitride. A substrate and the combination of NH.sub.3 and NF.sub.3 gases or the combination of CF.sub.4 and O.sub.2 gases mixed with H.sub.2 and N.sub.2 gases are located within an etch chamber. An electrical field is created within the etch chamber causing the gas mixture to form a plasma. The negative charge at the bottom of the chamber attracts the positively charged plasma, thereby etching the substrate in the downward direction. The result is an anisotropic product. The method is also shown to be effective in non-selectively etching thermal and deposited oxides, resulting in a similar etch rate for the different types of oxides.

    摘要翻译： 使用在蚀刻室内产生的卤化氢等离子体对衬底上的二氧化硅进行定向蚀刻。 该方法选择性地相对于多晶硅和氮化硅蚀刻二氧化硅。 衬底和NH3和NF3气体的组合或与H 2和N 2气体混合的CF 4和O 2气体的组合位于蚀刻室内。 在蚀刻室内产生电场，使得气体混合物形成等离子体。 室底部的负电荷吸引带正电的等离子体，从而沿向下的方向蚀刻衬底。 其结果是各向异性产品。 该方法还显示在非选择性蚀刻热和沉积氧化物中有效，导致不同类型氧化物的蚀刻速率相似。

    Aluminum oxide LPCVD system
    18.
    发明授权
    Aluminum oxide LPCVD system 失效
    氧化铝LPCVD系统

    公开(公告)号：US5540777A

    公开(公告)日：1996-07-30

    申请号：US541284

    申请日：1995-10-12

    申请人： Steven G. Barbee ,  Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  Richard Hsiao ,  James A. O'Neill ,  Narayana V. Sarma ,  Donald L. Wilson ,  Justin W.-C. Wong ,  Steven P. Zuhoski

    发明人： Steven G. Barbee ,  Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  Richard Hsiao ,  James A. O'Neill ,  Narayana V. Sarma ,  Donald L. Wilson ,  Justin W.-C. Wong ,  Steven P. Zuhoski

    IPC分类号： C23C16/40 ,  C23C16/448 ,  C23C16/52 ,  H01L21/205 ,  H01L21/31 ,  H01L21/316 ,  C23C16/00

    CPC分类号： C23C16/403 ,  C23C16/4481 ,  C23C16/52

    摘要： A process and apparatus for Al.sub.2 O.sub.3 CVD on silicon wafers using aluminum tri-isopropoxide in a high-volume production environment is presented. The conditions required to use ATI in a production environment and provide maximum utilization of ATI are first of all delivery of ATI via direct evaporation. The ATI source bottle is pumped out (bypassing substrates) until propene and isopropanol signals are reduced to 1% of process pressure before start of aluminum oxide deposition. Either IR spectroscopy or mass spectrometry can be used to provide a control signal to the microprocessor controller. Heating the supplied tetramer to 120.degree. C. for two hours assures complete conversion to trimer. The ATI is stored at 90.degree. C. to minimize decomposition during idle periods and allow recovery of trimer upon return to 120.degree. C. for two hours. During periods of demand, the ATI is held at 120.degree. C. to minimize decomposition.

    摘要翻译： 介绍了在大批量生产环境中使用三异丙氧基铝的硅晶片上Al2O3 CVD的工艺和装置。 在生产环境中使用ATI并提供ATI的最大利用率所需的条件首先通过直接蒸发传送ATI。 在开始氧化铝沉积之前，将ATI源瓶泵出（旁路基板），直到丙烯和异丙醇信号降低到过程压力的1％。 可以使用红外光谱或质谱法向微处理器控制器提供控制信号。 将供应的四聚体加热至120℃保持两小时，确保完全转化为三聚体。 将ATI储存在90℃以使空闲期间的分解最小化，并允许在回到120℃回收三聚体两小时。 在需求期间，ATI保持在120℃以最小化分解。