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公开(公告)号：US07396746B2
公开(公告)日：2008-07-08
申请号：US10852643
申请日：2004-05-24
Applicant: Steven R. Walther , Ziwei Fang , Justin Tocco , Carleton F. Ellis, III
Inventor： Steven R. Walther , Ziwei Fang , Justin Tocco , Carleton F. Ellis, III
IPC: H01L21/425
CPC classification number: H01J37/32412 , C23C14/48 , H01L21/2236
Abstract: A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system having a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber, an anode spaced from the platen, and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, a parameter of an implant process is varied to at least partially compensate for undesired effects of interaction between ions being implanted and the substrate. For example, dose rate, ion energy, or both may be varied during the implant process. In another aspect, a pretreatment step includes accelerating ions from the plasma to the anode to cause emission of secondary electrons from the anode, and accelerating the secondary electrons from the anode to a substrate for pretreatment of the substrate.
Abstract translation: 用于等离子体离子注入衬底的方法包括提供等离子体离子注入系统，其具有处理室，用于在处理室中产生等离子体的源，用于在处理室中保持衬底的压板，与压板隔开的阳极， 以及用于产生用于将离子从等离子体加速到衬底中的注入脉冲的脉冲源。 在一个方面，改变注入过程的参数以至少部分地补偿被植入的离子与衬底之间的相互作用的不期望的影响。 例如，剂量率，离子能量或二者可以在植入过程期间变化。 另一方面，预处理步骤包括将离子从等离子体加速到阳极，以引起来自阳极的二次电子的发射，以及将二次电子从阳极加速至衬底以进行预处理。
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12.发明授权Plasma implantation of deuterium for passivation of semiconductor-device interfaces 失效用于钝化半导体器件界面的氘的等离子体注入公开(公告)号：US07378335B2
公开(公告)日：2008-05-27
申请号：US11288828
申请日：2005-11-29
Applicant: Steven R. Walther , Ukyo Jeong , Sandeep Mehta , Naushad K. Variam
Inventor： Steven R. Walther , Ukyo Jeong , Sandeep Mehta , Naushad K. Variam
IPC: H01L21/425
CPC classification number: H01L21/3003 , H01L21/28185 , H01L21/2822 , H01L21/28238
Abstract: A method for fabricating a semiconductor-based device includes providing a substrate including a semiconductor layer, forming a gate dielectric layer on the semiconductor layer, forming a plasma including deuterium, plasma implanting deuterium from the plasma into the substrate, and annealing the substrate to promote passivation of the interface between the dielectric layer and the semiconductor layer.
Abstract translation: 一种制造基于半导体的器件的方法，包括提供包括半导体层的衬底，在半导体层上形成栅介质层，形成包括氘的等离子体，将等离子体等离子体注入氘到衬底中，以及退火衬底以促进 钝化介电层和半导体层之间的界面。
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13.发明申请公开(公告)号：US20140209820A1
公开(公告)日：2014-07-31
申请号：US14243554
申请日：2014-04-02
Applicant: Kenneth J. Barry , Mark T. Brown , Michael L. Bufano , Gerald M. Friedman , Peter M. King , Matthew A. Medford , Anne L. Testoni , Steven R. Walther , Tzvi Avnery
Inventor： Kenneth J. Barry , Mark T. Brown , Michael L. Bufano , Gerald M. Friedman , Peter M. King , Matthew A. Medford , Anne L. Testoni , Steven R. Walther , Tzvi Avnery
Abstract: Systems and methods for manufacturing a vacuum device, such as an electron emitter, that includes a foil exit window palced over and joined to a support grid. In one particular method, the vacuum chamber of an electron emitter has a thin foil forming an exit window at one end. The thin foil may be titanium or any suitable material and the foil will typically enlarge during a bonding process that attaches the foil to the support grid. In one manufacturing process, the support grid is provided with a surface that has contours, typically being smooth recessed surfaces, that the foil once enlarged can lie against as the vacuum pulls the foil against the grid.
Abstract translation: 用于制造诸如电子发射器的真空装置的系统和方法，其包括在支撑网格上踩过并连接到支撑网格的箔出口窗口。 在一种特定方法中，电子发射器的真空室具有在一端形成出射窗的薄箔。 薄箔可以是钛或任何合适的材料，并且箔将通常在将箔附接到支撑网格的粘合过程中扩大。 在一个制造过程中，支撑格栅设置有表面，该表面具有轮廓，通常是光滑的凹面，当箔真空将箔拉到格栅上时，箔一旦放大就可以抵抗。
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公开(公告)号：US07820987B2
公开(公告)日：2010-10-26
申请号：US11961157
申请日：2007-12-20
Applicant: Morgan Evans , Norman E. Hussey , Steven R. Walther , Rekha Padmanabhan
Inventor： Morgan Evans , Norman E. Hussey , Steven R. Walther , Rekha Padmanabhan
CPC classification number: H01J37/3171 , H01J37/304 , H01J2237/24535 , H01J2237/24542 , H01J2237/30455 , H01J2237/30472
Abstract: An approach for predicting dose repeatability in an ion implantation is described. In one embodiment, an ion source is tuned to generate an ion beam with desired beam current. Beam current measurements are obtained from the tuned ion beam. The dose repeatability is predicted for the ion implantation as a function of the beam current measurements.
Abstract translation: 描述了用于预测离子注入中的剂量重复性的方法。 在一个实施例中，调节离子源以产生具有期望的束电流的离子束。 光束电流测量从调谐离子束获得。 作为束电流测量的函数，预测离子注入的剂量重复性。
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15.发明申请公开(公告)号：US20090227062A1
公开(公告)日：2009-09-10
申请号：US12205514
申请日：2008-09-05
Applicant: Paul Sullivan , Peter Nunan , Steven R. Walther
Inventor： Paul Sullivan , Peter Nunan , Steven R. Walther
CPC classification number: H01L31/022425 , H01L31/03529 , H01L31/068 , H01L31/0682 , Y02E10/547
Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.
Abstract translation: 公开了用于制造太阳能电池的装置和方法。 在特定实施例中，太阳能电池可以通过在具有粒子源的室中设置太阳能电池来制造; 布置图案化组件，其包括孔和在所述颗粒源和所述太阳能电池之间的组件段; 以及将穿过所述孔的第一类型掺杂剂选择性地注入到所述太阳能电池的第一区域中，同时最小化将所述第一类型掺杂剂引入所述第一区域外的区域。
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Patent Agency Ranking
公开(公告)号：US07544957B2
公开(公告)日：2009-06-09
申请号：US11441633
申请日：2006-05-26
Applicant: Steven R. Walther , Sandeep Mehta
Inventor： Steven R. Walther , Sandeep Mehta
CPC classification number: H01J37/3171 , H01J37/3026 , H01J37/3172 , H01J2237/30461 , H01J2237/30472 , H01J2237/30488 , H01J2237/31703 , H01J2237/3171
Abstract: A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion implanter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion implanter is also provided.
Abstract translation: 一种方法包括接收表示工件前表面的期望的二维不均匀剂量图案的输入信号，相对于离子束驱动工件以将离子束分布在工件的前表面上，并且控制 离子注入机的至少一个参数，当离子束入射到工件的前表面上，以在工件前表面相对于离子束的一次通过中直接产生所需的二维非均匀剂量图案。 光束可以是扫描光束或带状光束。 还提供了离子注入机。
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公开(公告)号：US20090084757A1
公开(公告)日：2009-04-02
申请号：US11863886
申请日：2007-09-28
Applicant: Yuri Erokhin , Steven R. Walther , Peter D. Nunan
Inventor： Yuri Erokhin , Steven R. Walther , Peter D. Nunan
CPC classification number: H01J37/3053 , H01J2237/30455 , H01J2237/3151 , H01J2237/31701 , H01L22/20
Abstract: An approach for providing uniformity control in an ion beam etch is described. In one embodiment, there is a method for providing uniform etching in an ion beam based etch process. In this embodiment, an ion beam is directed at a surface of a substrate. The surface of the substrate is etched with the ion beam. The etching is controlled to attain uniformity in the etch of the substrate. The control attains uniformity as a function of at least one ion beam based parameter selected from a plurality of ion beam based parameters.
Abstract translation: 描述了在离子束蚀刻中提供均匀性控制的方法。 在一个实施例中，存在在基于离子束的蚀刻工艺中提供均匀蚀刻的方法。 在本实施例中，离子束被引导到基板的表面。 用离子束蚀刻衬底的表面。 控制蚀刻以在衬底的蚀刻中获得均匀性。 控制获得作为从多个基于离子束的参数中选择的至少一个基于离子束的参数的函数的均匀性。
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18.发明申请公开(公告)号：US20080314731A1
公开(公告)日：2008-12-25
申请号：US11767730
申请日：2007-06-25
Applicant: Steven R. Walther , Bon-Woong Koo , Bernard Gregory Lindsay
Inventor： Steven R. Walther , Bon-Woong Koo , Bernard Gregory Lindsay
CPC classification number: H01J37/3299 , H01J37/32935
Abstract: Techniques for detecting wafer charging in a plasma processing system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for detecting wafer charging in a plasma processing system. The apparatus may comprise a plasma chamber to produce a plasma discharge above a wafer in the plasma chamber. The apparatus may also comprise a biasing circuit to bias the wafer to draw ions from the plasma discharge towards the wafer. The apparatus may further comprise a detection mechanism to detect charge buildup on the wafer by measuring an electric field in one or more designated locations near a top surface of the wafer.
Abstract translation: 公开了一种在等离子体处理系统中检测晶片充电的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于在等离子体处理系统中检测晶片充电的装置。 该装置可以包括等离子体室，以在等离子体室中的晶片之上产生等离子体放电。 该装置还可以包括偏置电路，用于偏置晶片以从离子放电中向离子晶片提取离子。 该装置还可以包括检测机构，以通过测量在晶片顶表面附近的一个或多个指定位置的电场来检测晶片上的电荷积累。
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19.发明申请METHOD AND APPARATUSES FOR PROVIDING ELECTRICAL CONTACT FOR PLASMA PROCESSING APPLICATIONS 审中-公开用于提供等离子体处理应用的电气接触的方法和装置公开(公告)号：US20080160212A1
公开(公告)日：2008-07-03
申请号：US11616314
申请日：2006-12-27
Applicant: Bon-Woong Koo , Steven R. Walther , Christopher J. Leavitt , Justin Tocco , Sung-Hwan Hyun , Timothy J. Miller , Jay T. Scheuer , Atul Gupta , Vikram Singh , Deven Raj
Inventor： Bon-Woong Koo , Steven R. Walther , Christopher J. Leavitt , Justin Tocco , Sung-Hwan Hyun , Timothy J. Miller , Jay T. Scheuer , Atul Gupta , Vikram Singh , Deven Raj
CPC classification number: H01J37/32706 , H01J37/32623 , H01L21/67011 , H01L21/67069 , H01L21/68714 , H01L21/68735
Abstract: A method and apparatuses for providing improved electrical contact to a semiconductor wafer during plasma processing applications are disclosed. In one embodiment, an apparatus includes a wafer platen for supporting the wafer; and a plurality of electrical contact elements, each of the plurality of electrical contact elements are configured to provide a path for supplying a bias voltage from a bias power supply to the wafer on the wafer platen. The plurality of electrical contact elements are also geometrically arranged such that at least one electrical contact element contacts an inner surface region (e.g., region between a center of wafer and a distance approximately half of the radius of the wafer) and at least one electrical contact element contacts an outer annular surface region (e.g., region between an outer edge of wafer and a distance approximately half of the radius of the wafer).
Abstract translation: 公开了一种用于在等离子体处理应用期间提供与半导体晶片的改进的电接触的方法和装置。 在一个实施例中，一种装置包括用于支撑晶片的晶片台板; 以及多个电接触元件，所述多个电接触元件中的每一个被配置为提供用于将来自偏置电源的偏置电压提供给晶片台板上的晶片的路径。 多个电接触元件也被几何地布置成使得至少一个电接触元件接触内表面区域（例如，晶片的中心与晶片的半径的一半的距离）和至少一个电接触 元件接触外部环形表面区域（例如，晶片的外边缘之间的区域和晶片的半径的一半的距离）。
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公开(公告)号：US07342240B2
公开(公告)日：2008-03-11
申请号：US11361765
申请日：2006-02-24
Applicant: Steven R. Walther , Morgan Evans
Inventor： Steven R. Walther , Morgan Evans
IPC: H01J37/317 , H01J37/304
CPC classification number: H01J37/026 , H01J2237/0044 , H01J2237/31703
Abstract: An ion beam monitoring system includes a charge neutralization system and a sensor. The charge neutralization system is configured to provide a compensating current to control a charge on a front surface of a wafer. The sensor is configured to sense the compensating current and provide a sensor signal in response to the compensating current, wherein the sensor signal is representative of a beam current of an ion beam. The charge neutralization system may include a plasma flood gun configured to provide the compensating current to the ion beam.
Abstract translation: 离子束监测系统包括电荷中和系统和传感器。 电荷中和系统被配置为提供补偿电流以控制晶片前表面上的电荷。 传感器被配置为感测补偿电流并且响应于补偿电流提供传感器信号，其中传感器信号代表离子束的束电流。 电荷中和系统可以包括配置成向离子束提供补偿电流的等离子体喷射枪。
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