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公开(公告)号:US10991510B2
公开(公告)日:2021-04-27
申请号:US16359824
申请日:2019-03-20
Applicant: TDK CORPORATION
Inventor: Saori Takahashi , Masahito Furukawa , Masamitsu Haemori , Hiroki Uchiyama , Wakiko Sato , Hitoshi Saita
Abstract: A dielectric membrane may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after membrane formation. The inventors have newly found that when a dielectric membrane includes Ca having a lower ionization tendency than Ba and Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 and satisfies at least one of degree of orientation of (100) plane>degree of orientation of (110) plane and degree of orientation of (111) plane>degree of orientation of (110) plane in a membrane thickness direction, the dielectric membrane is less likely to be damaged during a wet process, and the resistance to a wet process is improved.
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公开(公告)号:US10593863B2
公开(公告)日:2020-03-17
申请号:US15466344
申请日:2017-03-22
Applicant: TDK CORPORATION
Inventor: Tomohisa Azuma , Masaru Nanao , Tatsuji Sano , Masahito Furukawa , Kenta Ishii
IPC: H01L41/187 , H01L41/193 , C23C14/08 , C23C14/34 , H01J37/34 , H01L41/047 , H01L41/297 , H01L41/316
Abstract: A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least one selected from the group consisting of Nb (niobium), Ta (tantalum) and Zr (zirconium) with Nb (niobium) as a necessity, the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains and grain boundaries existing among the crystal grains, and in the grain boundary, the molar ratio of at least one of Nb (niobium), Ta (tantalum), and Zr (zirconium) in the B components is higher than the molar ratio in the interior of the crystal grains by 30% or more.
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公开(公告)号:US10003009B2
公开(公告)日:2018-06-19
申请号:US14633649
申请日:2015-02-27
Applicant: TDK CORPORATION
Inventor: Masahito Furukawa , Yoshikazu Shimura , Taku Masai , Satoshi Wada
IPC: H01L41/187 , H01L41/083
CPC classification number: H01L41/1873 , H01L41/083 , H01L41/1871
Abstract: A composite piezoelectric ceramic includes a compact of crystal particles including at least one of potassium niobate (KNbO3) and sodium niobate (NaNbO3) and optionally further including lithium niobate (LiNbO3), and a layer containing barium titanate (BaTiO3) that is disposed on the surface of the compact while forming a heterojunction with the compact. A piezoelectric device includes the composite piezoelectric ceramic.
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公开(公告)号:US10002714B2
公开(公告)日:2018-06-19
申请号:US15134799
申请日:2016-04-21
Applicant: TDK Corporation
Inventor: Saori Takeda , Masahito Furukawa , Masanori Kosuda , Shirou Ootsuki , Yasunori Harada
IPC: H01G4/33 , H01G4/12 , H01G4/08 , C04B35/468 , C04B35/622 , C04B35/626 , C23C14/08
CPC classification number: H01G4/33 , C04B35/4682 , C04B35/62218 , C04B35/6261 , C04B2235/3208 , C04B2235/3217 , C04B2235/3224 , C04B2235/3241 , C04B2235/3244 , C04B2235/3262 , C04B2235/3281 , C04B2235/3286 , C04B2235/604 , C04B2235/6567 , C04B2235/787 , C04B2235/788 , C04B2235/79 , C23C14/088 , H01G4/085 , H01G4/1227 , H01G4/1245
Abstract: The present invention relates to a dielectric element such as a thin-film capacitor including a dielectric film. The dielectric film contains a main component represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0
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公开(公告)号:US09831418B2
公开(公告)日:2017-11-28
申请号:US14610321
申请日:2015-01-30
Applicant: TDK CORPORATION
Inventor: Taku Masai , Masahito Furukawa , Hiroki Katoh
IPC: H01L41/187 , H01L41/18 , H01L41/08 , H01L41/083 , H01L41/316
CPC classification number: H01L41/1878 , C04B35/475 , C04B2235/3201 , C04B2235/3206 , C04B2235/3241 , C04B2235/3262 , C04B2235/327 , H01L41/0805 , H01L41/083 , H01L41/18 , H01L41/316
Abstract: The present invention aims to provide a piezoelectric composition and a piezoelectric element. In the piezoelectric composition, the main component is represented by the following formula with a perovskite type structure, (Bi(0.5x+y+z)Na0.5x)m(Ti(x+0.5y)Mg0.5yMez)O3 wherein, 0.05≦x≦0.7, 0.01≦y≦0.7, 0.01≦z≦0.6, 0.75≦m≦1.0, x+y+z=1 and the transition metal element Me is any one or more selected from the group consisting of Mn, Cr, Fe and Co.
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公开(公告)号:US09537083B2
公开(公告)日:2017-01-03
申请号:US14201515
申请日:2014-03-07
Applicant: TDK CORPORATION
Inventor: Taku Masai , Masamitsu Haemori , Masahito Furukawa , Junichi Yamazaki , Kouhei Ohhashi
IPC: H01L41/187 , C04B35/475 , H01L41/08 , H01L41/316
CPC classification number: H01L41/1878 , C04B35/475 , H01L41/0805 , H01L41/316
Abstract: Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Biu1MeO3.
Abstract translation: 本发明提供一种压电组合物,其含有主要成分为钙钛矿型氧化物,其由不含Pb的通式ABO3表示,具有含有Bi,Na,K的A位点和含有Ti的B位点。 Ti部分被选自Mn,Cr,Fe和Co中的至少一种的过渡金属元素Me所取代。钙钛矿型氧化物中Bi和过渡金属元素Me的含量为 主要组分按Biu1MeO3计为6摩尔%至43摩尔%。
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公开(公告)号:US09455087B2
公开(公告)日:2016-09-27
申请号:US14833614
申请日:2015-08-24
Applicant: TDK CORPORATION
Inventor: Saori Takeda , Masahito Furukawa , Masanori Kosuda , Yuji Sezai
CPC classification number: H01G4/10 , H01G4/1227 , H01G4/20 , H01G4/33
Abstract: A dielectric film contains as a main component a dielectric composition represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0.001≦x≦0.400, 0.001≦y≦0.400, and 0.900≦z
Abstract translation: 介电膜含有作为主要成分的由通式(Ba1-xCax)z(Ti1-yZry)O3表示的电介质组合物,其中0.001≤x≤0.400,0.001≤y≤0.40,0.900≤z<0.995。 在介电组合物的X射线衍射图中,介电组合物在由通式表示的四方晶系的(001)面衍射峰位置2θt和(100)面之间具有0.00°≤2θc-2θt<0.20°的关系 由通式表示的立方结构的衍射峰位置2θc。
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公开(公告)号:US09437807B2
公开(公告)日:2016-09-06
申请号:US14674466
申请日:2015-03-31
Applicant: TDK CORPORATION
Inventor: Yuko Saya , Taku Masai , Masahito Furukawa , Masamitsu Haemori
IPC: H01L41/187 , C04B35/475 , H01L41/083 , H01L41/08
CPC classification number: H01L41/1878 , B32B18/00 , C04B35/475 , C04B35/6261 , C04B35/62655 , C04B35/62675 , C04B35/638 , C04B2235/3201 , C04B2235/3206 , C04B2235/3217 , C04B2235/3232 , C04B2235/3272 , C04B2235/3298 , C04B2235/442 , C04B2235/449 , C04B2235/6562 , C04B2235/6565 , C04B2235/768 , C04B2235/785 , C04B2235/786 , C04B2237/346 , C04B2237/68 , C04B2237/704 , C23C14/08 , H01L41/0805 , H01L41/083
Abstract: The present invention aims to provide a piezoelectric composition and a piezoelectric element containing the piezoelectric composition. In the piezoelectric composition, the main component contains a substance represented by the following formula with a perovskite structure, (Bi(0.5x+y+z)Na0.5x)m(Ti(x+0.5y)Mg0.5yAlkzCo(1−k)z)O3 0.15≦x≦0.7, 0.28≦y≦0.75, 0.02≦z≦0.30, 0.17≦k≦0.83, 0.75≦m≦1.0, and x+y+z=1.
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公开(公告)号:US09324931B2
公开(公告)日:2016-04-26
申请号:US13893865
申请日:2013-05-14
Applicant: TDK CORPORATION
Inventor: Masahito Furukawa , Tomohisa Azuma , Taku Masai
IPC: H01L41/187 , C04B35/00 , H01L41/047 , H01L41/08 , H01L41/313
CPC classification number: H01L41/0477 , H01L41/0815 , H01L41/1873 , H01L41/313
Abstract: A piezoelectric device includes a first electrode film, a piezoelectric film disposed on the first electrode film, and a second electrode film disposed on the piezoelectric film. At least one of the first and second electrode films is composed of an alloy, and a main component of the alloy is a metal selected from the group consisting of Ti, Al, Mg, and Zn. The piezoelectric film has a main composition represented by (K1-x-y-w-vNaxLiyBawSrv)m(Nb1-z-uTazZru)O3 (1), where x, y, z, w, v, u, and m in formula (1) satisfy 0.4
Abstract translation: 压电装置包括第一电极膜,设置在第一电极膜上的压电膜和设置在压电膜上的第二电极膜。 第一电极膜和第二电极膜中的至少一个由合金构成,合金的主要成分为选自Ti,Al,Mg,Zn的金属。 压电膜具有由(K1-xyw-vNaxLiyBawSrv)m(Nb1-z-uTazZru)O3(1)表示的主要组成,其中式(1)中的x,y,z,w,v,u和m满足 0.4
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