公开(公告)号：US20130257682A1

公开(公告)日：2013-10-03

申请号：US13790803

申请日：2013-03-08

Applicant: TDK CORPORATION

Inventor： Kenichi YOSHIDA ,  Yuhei HORIKAWA

IPC: H01P3/08 ,  H01Q1/50

CPC classification number: H01P3/08 ,  H01P11/003 ,  H01Q1/36 ,  H01Q1/50

Abstract: A high-frequency transmission line having low alternate current (AC) resistance is provided. One aspect of the present invention is a high-frequency transmission line disposed along a surface of an insulating support, wherein, letting F [Hz] be the frequency of an AC electric signal transmitted by the high-frequency transmission line and Ms [Wb/m] be the saturation magnetization per unit area, the frequency value F and the saturation magnification value per unit area Ms satisfy the following expression (1): Ms≦(1.5×102)/F+5.7×10−8.  (1)

Abstract translation: 提供具有低交流（AC）电阻的高频传输线。 本发明的一个方面是沿着绝缘支撑体的表面布置的高频传输线，其中，使F [Hz]为由高频传输线发送的AC电信号的频率，Ms [Wb / m]为每单位面积的饱和磁化强度，每单位面积Ms的频率值F和饱和倍率值满足下式（1）：Ms @（1.5×102）/F +5.7×10-8。（1）

公开(公告)号：US20210087692A1

公开(公告)日：2021-03-25

申请号：US17111040

申请日：2020-12-03

Applicant: TDK CORPORATION

Inventor： Makoto ORIKASA ,  Yuhei HORIKAWA ,  Yoshihiro KANBAYASHI ,  Hisayuki ABE

IPC: C23C18/16 ,  C23C18/32 ,  C23C18/38 ,  B32B27/08 ,  B32B27/36 ,  B32B15/09 ,  B32B15/20 ,  B32B3/30 ,  H01L23/52 ,  H01L27/15 ,  B32B27/18 ,  C23C18/30

Abstract: A sheet material includes a resin layer containing a binder and catalyst particles, an electroless plating film on the side of one main surface of the resin layer and including first electroless plating films and a second electroless plating film, and a base material on the side of the other main surface of the resin layer.

公开(公告)号：US20190032221A1

公开(公告)日：2019-01-31

申请号：US16046422

申请日：2018-07-26

Applicant: TDK CORPORATION ,  ACHILLES CORPORATION

Inventor： Makoto ORIKASA ,  Yuhei HORIKAWA ,  Yoshihiro KANBAYASHI ,  Hisayuki ABE ,  Hiroki ASHIZAWA ,  Miho MORI ,  Misaki TAMURA

IPC: C23C18/31 ,  H05K3/18 ,  H05K3/06 ,  H05K1/03 ,  C23C18/16

Abstract: A sheet material includes a resin layer containing a binder and polypyrrole particles, an electroless plating film provided on the side of one main surface of the resin layer and including first electroless plating films and a second electroless plating film, and a transparent base material provided on the side of the other main surface of the resin layer.

公开(公告)号：US20140054770A1

公开(公告)日：2014-02-27

申请号：US13960330

申请日：2013-08-06

Applicant: TDK CORPORATION

Inventor： Kenichi YOSHIDA ,  Makoto ORIKASA ,  Hideyuki SEIKE ,  Yuhei HORIKAWA ,  Hisayuki ABE

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05571 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13076 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2224/05572 ,  H01L2924/00015 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, formed in a region in the opening on the electrode so that an upper surface of the metal layer is at a position lower than an upper surface of the insulating covering layer in a peripheral edge portion of the opening; and a dome-shaped bump containing Sn and Ti, formed in a region in the opening on the under bump metal layer, wherein an end portion of a boundary between the under bump metal layer and the bump is in contact with an inner wall of the opening portion in the insulating covering layer.

Abstract translation: 优选的端子结构包括基材; 形成在基材上的电极; 绝缘覆盖层，形成在所述基底材料上和所述电极上，并且具有暴露所述电极的至少一部分的开口; 在所述电极的开口部的区域形成含有Ni的下凸块金属层，使得所述金属层的上表面位于比所述开口的周缘部的所述绝缘覆盖层的上表面低的位置; 以及形成在下凸块金属层的开口部的区域中的包含Sn和Ti的圆顶状的凸部，其中，下凸块状金属层与凸块之间的边界的端部与内凸块 绝缘覆盖层的开口部。

公开(公告)号：US20140054767A1

公开(公告)日：2014-02-27

申请号：US13960173

申请日：2013-08-06

Applicant: TDK CORPORATION

Inventor： Kenichi YOSHIDA ,  Makoto ORIKASA ,  Hideyuki SEIKE ,  Yuhei HORIKAWA ,  Hisayuki ABE

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/05655 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2224/05552

Abstract: The present invention relates to a terminal structure comprising; a base material 10; an external electrode 20 formed on the base material; an insulating coating layer 30 formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under-bump metal layer 70 filling the opening and covering part of the insulating coating layer; and a dome-shaped bump 85 covering the under-bump metal layer, wherein in a cross section along a lamination direction, the under-bump metal layer has a convex shape toward the bump, and the thickness Tu0 of the under-bump metal layer at a center of the opening is equal to or greater than the thickness Tu1 of the under-bump metal layer at an end portion of the opening.

Abstract translation: 本发明涉及一种终端结构，包括： 基材10; 形成在基材上的外部电极20; 绝缘涂层30，形成在基材和电极上，并具有露出电极的至少一部分的开口; 填充绝缘涂层的开口和覆盖部分的凸块下金属层70; 以及覆盖凸块下金属层的圆顶状凸起85，其中沿着层叠方向的截面中，凸块下金属层朝向凸块呈凸形，凸块下金属层的厚度Tu0 在开口的中心处等于或大于开口端部处的凸块下金属层的厚度Tu1。

公开(公告)号：US20130126208A1

公开(公告)日：2013-05-23

申请号：US13678033

申请日：2012-11-15

Applicant: TDK CORPORATION

Inventor： Kenichi YOSHIDA ,  Yuhei HORIKAWA ,  Makoto ORIKASA ,  Hideyuki SEIKE

IPC: H01B1/02

CPC classification number: H01B1/02 ,  H01L2224/85444

Abstract: A coating is provided to a conductor, and has a layered structure of a palladium layer. The palladium layer is amorphous and contains phosphorus in a concentration ranging from 7.3% by mass to 11.0% by mass.

Abstract translation: 向导体提供涂层，并且具有钯层的层状结构。 钯层为无定形，含有浓度为7.3质量％〜11.0质量％的磷。

公开(公告)号：US20240047695A1

公开(公告)日：2024-02-08

申请号：US18268643

申请日：2021-12-16

Applicant: TDK CORPORATION

Inventor： Yuhei HORIKAWA ,  Makoto ENDO ,  Takuya KAKIUCHI ,  Miyuki YANAGIDA ,  Yuki NAITO ,  Takahiro TASHIRO

IPC: H01M4/66 ,  H01M10/0525 ,  H01M4/38

CPC classification number: H01M4/667 ,  H01M10/0525 ,  H01M4/386 ,  H01M4/661 ,  H01M2004/027

Abstract: A laminated body contains a first metal layer containing copper; and a second metal layer containing nickel and laminated directly on the first metal layer. A first surface of the second metal layer is a surface in contact with the first metal layer. A second surface of the second metal layer is a reverse face of the first surface. A thickness direction of the second metal layer is a direction approximately perpendicular to the first surface and oriented from the first surface toward the second surface. A unit of a content of nickel in the second metal layer is % by mass. The content of nickel in the second metal layer 2 decreases along the thickness direction D.

公开(公告)号：US20240047694A1

公开(公告)日：2024-02-08

申请号：US18268640

申请日：2021-12-16

Applicant: TDK CORPORATION

Inventor： Yuhei HORIKAWA ,  Makoto ENDO ,  Takuya KAKIUCHI ,  Miyuki YANAGIDA ,  Yuki NAITO ,  Takahiro TASHIRO

IPC: H01M4/66 ,  H01M4/134

CPC classification number: H01M4/667 ,  H01M4/662 ,  H01M4/134 ,  H01M2004/027

Abstract: A laminated body contains a first metal layer containing copper and a second metal layer containing nickel and laminated directly on the first metal layer. A first surface of the second metal layer is a surface in contact with the first metal layer. A second surface of the second metal layer is a reverse surface of the first surface. A thickness direction of the second metal layer is a direction approximately perpendicular to the first surface and oriented from the first surface toward the second surface. A unit of a content of nickel in the second metal layer is % by mass. The content of nickel in the second metal layer increases along the thickness direction.

公开(公告)号：US20200381266A1

公开(公告)日：2020-12-03

申请号：US16997092

申请日：2020-08-19

Applicant: TDK CORPORATION

Inventor： Takashi DAITOKU ,  Susumu TANIGUCHI ,  Akiko SEKI ,  Atsushi SATO ,  Yuhei HORIKAWA ,  Makoto ORIKASA ,  Hisayuki ABE

IPC: H01L21/48 ,  C23C18/18 ,  C23C18/20 ,  C23C18/16 ,  C23C18/30 ,  C23C18/31 ,  G03F7/00 ,  H01L33/62

Abstract: A method of producing an electroconductive substrate including a base material, and an electroconductive pattern disposed on one main surface side of the base material includes: a step of forming a trench including a bottom surface to which a foundation layer is exposed, and a lateral surface which includes a surface of a trench formation layer, according to an imprint method; and a step of forming an electroconductive pattern layer by growing metal plating from the foundation layer which is exposed to the bottom surface of the trench.

公开(公告)号：US20190013293A1

公开(公告)日：2019-01-10

申请号：US16037537

申请日：2018-07-17

Applicant: TDK CORPORATION

Inventor： Makoto ORIKASA ,  Hideyuki SEIKE ,  Yuhei HORIKAWA ,  Hisayuki ABE

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/95 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05655 ,  H01L2224/11005 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/1181 ,  H01L2224/1184 ,  H01L2224/11849 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16148 ,  H01L2224/81002 ,  H01L2224/81014 ,  H01L2224/81022 ,  H01L2224/81035 ,  H01L2224/81047 ,  H01L2224/81048 ,  H01L2224/81065 ,  H01L2224/81143 ,  H01L2224/81815 ,  H01L2224/95146 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/01083

Abstract: A method for producing a semiconductor chip is a method for producing a semiconductor chip that includes a substrate, a conductive portion formed on the substrate, and a microbump formed on the conductive portion, which includes a smooth surface formation process of forming a smooth surface on the microbump, and the smooth surface formation process includes a heating process of causing a reducing gas to flow in an inert atmosphere into a space where the semiconductor chips are arranged and heated at or higher than a temperature of a melting point of the microbump, and in the heating process, a pressure application member is mounted on the microbump and among principal surfaces of the pressure application member, a principal surface that contacts the microbump is a flat surface.