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公开(公告)号：US20130168390A1
公开(公告)日：2013-07-04
申请号：US13727000
申请日：2012-12-26
Applicant: TOKYO ELECTRON LIMITED
Inventor： Taro IKEDA , Shigeru KASAI , Jun YAMASHITA , Masakazu BAN
IPC: H05B6/64
CPC classification number: H05B6/6402 , H05B6/6426 , H05B6/70 , H05B6/707 , H05B6/72 , H05B6/806
Abstract: In the microwave heating apparatus, four microwave introduction ports are arranged at positions spaced apart from each other at an angle of about 90° in a ceiling portion of a processing chamber in such a way that the long sides and the short sides thereof are in parallel to inner surfaces of four sidewalls. The microwave introduction port are disposed in such a way that each of the microwave introduction ports are not overlapped with another microwave introduction port whose long sides are in parallel to the long sides of the corresponding microwave introduction port when the corresponding microwave introduction port is moved in translation in a direction perpendicular to the long sides thereof.
Abstract translation: 在微波加热装置中，四个微波导入口被配置在处理室的顶部以大约90°的角度彼此间隔开的位置，使得其长边和短边平行 到四个侧壁的内表面。 微波引入端口以这样的方式设置，即当相应的微波引入端口移动时，每个微波引入端口不与其长边与相应的微波导入口的长边平行的另一个微波导入口重叠 在垂直于其长边的方向上平移。
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公开(公告)号：US20240014005A1
公开(公告)日：2024-01-11
申请号：US18217896
申请日：2023-07-03
Applicant: Tokyo Electron Limited
Inventor： Hiroyuki MATSUURA , Nobuo MATSUKI , Taro IKEDA
CPC classification number: H01J37/32091 , H01J37/3244 , H01J37/32568 , H01J37/32541 , H01J37/3417
Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and forms an internal space communicating with an inside of the processing container, an internal electrode that passes through the partition wall, is detachably and airtightly inserted into the internal space, and is supplied with RF power, and an external electrode provided outside the partition wall.
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公开(公告)号：US20230326716A1
公开(公告)日：2023-10-12
申请号：US18042513
申请日：2021-08-16
Applicant: Tokyo Electron Limited
Inventor： Eiki KAMATA , Hiroshi KANEKO , Taro IKEDA
IPC: H01J37/32
CPC classification number: H01J37/32119 , H01J37/3222 , H01J37/32311 , H01J37/32201 , H01J37/3244
Abstract: A plasma processing apparatus includes a chamber having a processing space for performing plasma processing on a substrate and a synthesis space for synthesizing electromagnetic waves, a dielectric window configured to partition the processing space and the synthesis space, an antenna unit having a plurality of antennas that radiate the electromagnetic waves into the synthesis space and functioning as a phased array antenna, an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit, and a controller configured to cause the antenna unit to function as the phased array antenna. The dielectric window has a plurality of recesses on a surface thereof facing the processing space.
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公开(公告)号：US20230245870A1
公开(公告)日：2023-08-03
申请号：US18101676
申请日：2023-01-26
Applicant: Tokyo Electron Limited
Inventor： Taro IKEDA , Hiroyuki MATSUURA , Satoru KAWAKAMI
IPC: H01J37/32 , C23C16/455 , C23C16/46
CPC classification number: H01J37/32724 , H01J37/32568 , H01J37/32174 , H01J37/32541 , C23C16/45536 , C23C16/46 , H01J2237/201 , H01J2237/20235 , H01J2237/332
Abstract: A plasma processing apparatus includes: a substrate holder configured to place a plurality of substrates in a multi-stage structure in a height direction on the substrate holder; and a processing container in which the substrate holder is accommodated and including a heating part that heats the plurality of substrates, wherein the substrate holder is provided with a plurality of stages made of a dielectric material, and a first electrode layer and a second electrode layer embedded in the plurality of stages.
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公开(公告)号：US20230238217A1
公开(公告)日：2023-07-27
申请号：US18156618
申请日：2023-01-19
Applicant: Tokyo Electron Limited
Inventor： Koji KOTANI , Eiki KAMATA , Taro IKEDA
IPC: H01J37/32
CPC classification number: H01J37/32238 , H01J37/3222
Abstract: A plasma processing apparatus includes: a processing container; a ceiling plate that constitutes a ceiling wall of the processing container, is formed of a first dielectric, and has an opening formed in the first dielectric; at least one transmissive window disposed in the opening and formed of a second dielectric having a second permittivity greater than a first permittivity of the first dielectric; and at least one electromagnetic wave supplier configured to supply electromagnetic waves toward the at least one transmissive window.
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Patent Agency Ranking
公开(公告)号：US20230064817A1
公开(公告)日：2023-03-02
申请号：US17904427
申请日：2021-02-15
Applicant: Tokyo Electron Limited
Inventor： Taro IKEDA , Toshifumi KITAHARA
IPC: H01J37/32
Abstract: A plasma processing apparatus, which introduces electromagnetic waves having a frequency of the VHF band or higher into a processing container and processes a substrate by using plasma generated from a gas, includes: a stage which is provided inside the processing container and on which the substrate is placed; an electromagnetic wave introducer formed to face an inner wall of the processing container and configured to introduce the electromagnetic waves into the processing container; and a dielectric member provided on the inner wall through which the electromagnetic waves propagate, wherein a first portion of the dielectric member protrudes from the inner wall toward the stage, and wherein a second portion of the dielectric member is inserted into a recess or step portion of the inner wall.
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公开(公告)号：US20220068606A1
公开(公告)日：2022-03-03
申请号：US17411992
申请日：2021-08-25
Applicant: TOKYO ELECTRON LIMITED
Inventor： Eiki KAMATA , Taro IKEDA , Haruhiko FURUYA
IPC: H01J37/32
Abstract: There is provided a plasma processing apparatus. The apparatus comprises a chamber having a processing space for performing plasma processing on a substrate and a combining space for combining electromagnetic waves, a dielectric window separating the processing space from the combining space, an antenna unit having a plurality of antennas radiating the electromagnetic waves to the combining space and functioning as a phased array antenna, an electromagnetic wave output unit that outputs the electromagnetic waves to the antenna unit, a stage on which the substrate is placed, a gas supply unit that supplies a gas for ALD film formation to the processing space, and a controller that controls the gas supply unit to supply the gas to perform the ALD film formation and control localized plasma to move at a high speed in the processing space by causing the antenna unit to function as the phased array antenna.
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公开(公告)号：US20210265138A1
公开(公告)日：2021-08-26
申请号：US17175782
申请日：2021-02-15
Applicant: Tokyo Electron Limited
Inventor： Taro IKEDA , Satoru KAWAKAMI , Sumi TANAKA
IPC: H01J37/32
Abstract: A stage includes a stage body having a placement surface and a radio-frequency electrode embedded in the stage body. The stage body is made of ceramics, and the radio-frequency electrode extends in a thickness direction of the stage body in a region below an outer periphery of the placement surface.
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公开(公告)号：US20210225612A1
公开(公告)日：2021-07-22
申请号：US17144647
申请日：2021-01-08
Applicant: Tokyo Electron Limited
Inventor： Eiki KAMATA , Taro IKEDA , Mikio SATO , Nobuhiko YAMAMOTO
Abstract: An array antenna radiates an electromagnetic wave into a chamber of a plasma processing apparatus. The array antenna includes antennas and coupling prevention elements arranged at intervals between the antennas. Each of the coupling prevention elements includes a first member connected to a ceiling wall which is a ground surface in the chamber and a second member connected to a tip end of the first member or a vicinity of the tip end of the first member.
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公开(公告)号：US20210125814A1
公开(公告)日：2021-04-29
申请号：US17076463
申请日：2020-10-21
Applicant: Tokyo Electron Limited
Inventor： Mikio SATO , Eiki KAMATA , Taro IKEDA
Abstract: A method of controlling a scanning-type plasma processing apparatus using a phased array antenna, includes observing light emission of plasma generated inside a processing container through observation windows provided at multiple positions in the processing container, calculating an in-plane distribution of values representing characteristics of the plasma on a substrate, based on data on the observed light emission of the plasma, and correcting a scanning pattern and/or a plasma density distribution of the plasma based on the calculated in-plane distribution of the values representing the characteristics of the plasma on the substrate.
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