公开(公告)号：US09620628B1

公开(公告)日：2017-04-11

申请号：US15204848

申请日：2016-07-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Gin-Chen Huang ,  Hui-Chi Huang ,  Yung-Cheng Lu

IPC: H01L29/66 ,  H01L29/06 ,  H01L21/28 ,  H01L23/522 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L29/66795 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/28 ,  H01L21/31116 ,  H01L23/5226 ,  H01L29/0673 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/7848

Abstract: A method to fabricate a semiconductor device includes forming a semiconductor fin on a substrate; forming a dummy gate material layer over the semiconductor fin; forming a contact hole in the dummy gate material layer; forming a source/drain feature in the contact hole; forming a contact feature on the source/drain feature within the contact hole; and replacing a dummy gate that is formed of the dummy gate material layer with a metal gate.

公开(公告)号：US20240395562A1

公开(公告)日：2024-11-28

申请号：US18790908

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Tung-Kai Chen ,  Chih-Chieh Chang ,  Kao-Feng Liao ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/321 ,  C09G1/02 ,  C09G1/04 ,  H01L21/306 ,  H01L21/768

Abstract: Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.

公开(公告)号：US20240326195A1

公开(公告)日：2024-10-03

申请号：US18193405

申请日：2023-03-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fang-I Chen ,  Pei-Keng Tsai ,  Hui-Chi Huang

IPC: B24B3/46

CPC classification number: B24B3/46

Abstract: An apparatus includes a first platen configured to hold a first workpiece; a first dressing board; and blade holder including arms extending from a central axis, wherein the blade holder is configured to hold a blade at an end of each respective arm, wherein the blade holder is operable to rotate around the central axis, wherein the blade holder is configured to trim the first workpiece using at least one blade, wherein the blade holder is configured to dress at least one blade on the first dressing board.

公开(公告)号：US12087590B2

公开(公告)日：2024-09-10

申请号：US18066934

申请日：2022-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Hui-Chi Huang ,  Kei-Wei Chen ,  Yen-Ting Chen

IPC: H01L21/306 ,  B24B37/24 ,  H01L21/321

CPC classification number: H01L21/30625 ,  B24B37/24 ,  H01L21/3212

Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.

公开(公告)号：US12030159B2

公开(公告)日：2024-07-09

申请号：US18334526

申请日：2023-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Kai Chen ,  Shang-Yu Wang ,  Wan-Chun Pan ,  Zink Wei ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B24B49/12 ,  B24B37/12 ,  B24B37/20 ,  B24B53/017 ,  G01N21/64

CPC classification number: B24B49/12 ,  B24B37/12 ,  B24B37/20 ,  B24B53/017 ,  G01N21/6456

Abstract: A method of operating a chemical mechanical planarization (CMP) tool includes attaching a polishing pad to a first surface of a platen of the CMP tool using a glue; removing the polishing pad from the platen, wherein after removing the polishing pad, residue portions of the glue remain on the first surface of the platen; identifying locations of the residue portions of the glue on the first surface of the platen using a fluorescent material; and removing the residue portions of the glue from the first surface of the platen.

公开(公告)号：US20230321789A1

公开(公告)日：2023-10-12

申请号：US18334526

申请日：2023-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Kai Chen ,  Shang-Yu Wang ,  Wan-Chun Pan ,  Zink Wei ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B24B49/12 ,  G01N21/64 ,  B24B53/017 ,  B24B37/20 ,  B24B37/12

CPC classification number: B24B49/12 ,  G01N21/6456 ,  B24B53/017 ,  B24B37/20 ,  B24B37/12

Abstract: A method of operating a chemical mechanical planarization (CMP) tool includes attaching a polishing pad to a first surface of a platen of the CMP tool using a glue; removing the polishing pad from the platen, wherein after removing the polishing pad, residue portions of the glue remain on the first surface of the platen; identifying locations of the residue portions of the glue on the first surface of the platen using a fluorescent material; and removing the residue portions of the glue from the first surface of the platen.

公开(公告)号：US20230118617A1

公开(公告)日：2023-04-20

申请号：US18066934

申请日：2022-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Hui-Chi Huang ,  Kei-Wei Chen ,  Yen-Ting Chen

IPC: H01L21/306 ,  B24B37/24 ,  H01L21/321

Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.

公开(公告)号：US20220367257A1

公开(公告)日：2022-11-17

申请号：US17869560

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Chih-Chieh Chang ,  Kao-Feng Liao ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/768

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

公开(公告)号：US20210313190A1

公开(公告)日：2021-10-07

申请号：US17353222

申请日：2021-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Tung-Kai Chen ,  Chih-Chieh Chang ,  Kao-Feng Liao ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/321 ,  H01L21/768 ,  C09G1/02 ,  C09G1/04 ,  H01L21/306

Abstract: Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.

公开(公告)号：US12036636B2

公开(公告)日：2024-07-16

申请号：US18174125

申请日：2023-02-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Shang-Yu Wang ,  Ching-Hsiang Tsai ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B24B37/10 ,  B24B37/04 ,  B24B37/32 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768

CPC classification number: B24B37/105 ,  B24B37/042 ,  B24B37/32 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

Abstract: A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.