公开(公告)号：US12041771B2

公开(公告)日：2024-07-16

申请号：US17815043

申请日：2022-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Jou Wu ,  Chih-Ming Lee ,  Keng-Ying Liao ,  Ping-Pang Hsieh ,  Su-Yu Yeh ,  Hsin-Hui Lin ,  Yu-Liang Wang

IPC: H01L29/788 ,  G11C8/14 ,  H01L29/423 ,  H01L29/66 ,  H10B41/10 ,  H10B41/35

CPC classification number: H10B41/35 ,  G11C8/14 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/788 ,  H10B41/10

Abstract: The present disclosure describes a patterning process for a strap region in a memory cell for the removal of material between polysilicon lines. The patterning process includes depositing a first hard mask layer in a divot formed on a top portion of a polysilicon layer interposed between a first polysilicon gate structure and a second polysilicon gate; depositing a second hard mask layer on the first hard mask layer. The patterning process also includes performing a first etch to remove the second hard mask layer and a portion of the second hard mask layer from the divot; performing a second etch to remove the second hard mask layer from the divot; and performing a third etch to remove the polysilicon layer not covered by the first and second hard mask layers to form a separation between the first polysilicon gate structure and the second polysilicon structure.

公开(公告)号：US11532658B2

公开(公告)日：2022-12-20

申请号：US16746720

申请日：2020-01-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chin-Yu Lin ,  Keng-Ying Liao ,  Su-Yu Yeh ,  Po-Zen Chen ,  Huai-Jen Tung ,  Hsien-Li Chen

IPC: H01L27/146

Abstract: An image sensor structure includes a semiconductor device, a plurality of image sensing elements formed in the semiconductor substrate, an interconnect structure formed on the semiconductor substrate, and a composite grid structure over the semiconductor substrate. The composite grid structure includes a tungsten grid, an oxide grid over the tungsten grid, and an adhesion enhancement grid spacing the tungsten grid from the oxide grid.

公开(公告)号：US20180166594A1

公开(公告)日：2018-06-14

申请号：US15375253

申请日：2016-12-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Chih Chen ,  Su-Yu Yeh ,  Tzu-Shin Chen ,  Mu-Han Cheng ,  Chun-Hai Huang

IPC: H01L31/0232 ,  G02B3/00 ,  G02B5/20 ,  H01L27/146 ,  H01L31/0352

CPC classification number: H01L31/02327 ,  G02B3/0068 ,  G02B5/201 ,  H01L27/14643 ,  H01L31/035281

Abstract: A semiconductor device and a method for fabricating the semiconductor device are provided. In the method for fabricating the semiconductor device, at first, a dielectric layer is provided. Then, trenches are formed in the dielectric layer. Thereafter, the trenches are filled with spacer material to form a spacer structure in the dielectric layer for defining pixel regions. Then, lens structures are formed on the pixel regions. Each of the lens structures includes a first curved lens layer, a second curved lens layer and a curved color filter layer. The curved color filter layer is disposed on the second curved lens layer or between the first curved lens layer and the second curved lens layer.

公开(公告)号：US20240363791A1

公开(公告)日：2024-10-31

申请号：US18766336

申请日：2024-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih Wei Sung ,  Chung-Bin Tseng ,  Keng-Ying Liao ,  Yen-Jou Wu ,  Po-Zen Chen ,  Su-Yu Yeh ,  Ching-Chung Su

IPC: H01L31/18 ,  H01L23/544 ,  H01L27/146

CPC classification number: H01L31/1876 ,  H01L23/544 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14687 ,  H01L31/186 ,  H01L31/1888 ,  H01L2223/54426

Abstract: A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

公开(公告)号：US20220359781A1

公开(公告)日：2022-11-10

申请号：US17814726

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih Wei Sung ,  Chung-Bin Tseng ,  Keng-Ying Liao ,  Yen-Jou Wu ,  Po-Zen Chen ,  Su-Yu Yeh ,  Ching-Chung Su

IPC: H01L31/18 ,  H01L27/146 ,  H01L23/544

Abstract: A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

公开(公告)号：US11164903B2

公开(公告)日：2021-11-02

申请号：US16422271

申请日：2019-05-24

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Huai-jen Tung ,  Ching-Chung Su ,  Keng-Ying Liao ,  Po-Zen Chen ,  Su-Yu Yeh ,  S. Y. Chen

IPC: H01L27/146 ,  H01L23/00

Abstract: The present disclosure describes the formation of a pad structure in an image sensor device using a sacrificial isolation region and a silicon oxide based stack with no intervening nitride etch-stop layers. The image sensor device includes a semiconductor layer comprising a first horizontal surface opposite to a second horizontal surface; a metallization layer formed on the second horizontal surface of the semiconductor layer, where the metallization layer includes a dielectric layer. The image sensor device also includes a pad region traversing through the semiconductor layer from the first horizontal surface to the second horizontal surface. The pad region includes an oxide layer with no intervening nitride layers formed on the dielectric layer of the metallization layer and a pad structure in physical contact with a conductive structure of the metallization layer.

公开(公告)号：US11029603B2

公开(公告)日：2021-06-08

申请号：US16226139

申请日：2018-12-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu Kai Chen ,  Forster Yuan ,  Ko-Bin Kao ,  Shi-Ming Wang ,  Su-Yu Yeh ,  Li-Jen Wu ,  Oliver Yu

IPC: G03F7/16 ,  H01L21/67 ,  B25J9/16 ,  B25J5/00 ,  G06K19/07

Abstract: Embodiments of the present disclosure describe a chemical replacement system and a method to automatically replace PR bottles. The chemical replacement system includes a computer system and a transfer module. The computer system can receive a request signal to replace one or more chemical containers and transmit a command to the transfer module. The transfer module, being controlled by the computer system, can include a holder configured to hold the one or more chemical containers (e.g., PR bottles); a door unit configured to open in response to the command; and a transfer unit configured to eject the holder in response to the command for replacement. The chemical replacement system can further include an automated vehicle configured to replace the one or more chemical containers in the ejected holder.

公开(公告)号：US20190146348A1

公开(公告)日：2019-05-16

申请号：US15905739

申请日：2018-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kai Chen ,  Chia-Hung Chung ,  Ko-Bin Kao ,  Su-Yu Yeh ,  Li-Jen Wu ,  Zhi-You Ke ,  Ming-Hung Lin

IPC: G03F7/40 ,  H01L21/027 ,  H01L21/66 ,  G03F7/039 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.