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    Drive circuit and inverter for voltage driving type semiconductor device
    12.
    发明授权
    Drive circuit and inverter for voltage driving type semiconductor device 有权
    用于电压驱动型半导体器件的驱动电路和逆变器

    公开(公告)号：US07782098B2

    公开(公告)日：2010-08-24

    申请号：US12170472

    申请日：2008-07-10

    申请人： Takayuki Hashimoto ,  Takashi Hirao ,  Masaki Shiraishi

    发明人： Takayuki Hashimoto ,  Takashi Hirao ,  Masaki Shiraishi

    IPC分类号： H03K3/00

    CPC分类号： H02M3/07 ,  H02M1/08 ,  H02M7/5387 ,  H02M2003/071

    摘要： A drive circuit for driving a semiconductor element is equipped with: a first switch connected to a positive side of a DC power supply; a second switch connected to the other terminal of the first switch and to a negative side of the DC power supply; a third switch connected to the positive side of the DC power supply; a fourth switch connected to the other terminal of the third switch; a fifth switch connected to the other terminal of the fourth switch and to the negative side of the DC power supply; and a capacitor connected to the other terminal of the first switch and to the other terminal of the fourth switch. A gate of the semiconductor element is connected to the other terminal of said third switch; and a source of the semiconductor element is connected to the negative side of the DC power supply.

    摘要翻译： 用于驱动半导体元件的驱动电路配备有：连接到直流电源的正侧的第一开关; 连接到第一开关的另一个端子和直流电源的负极的第二开关; 连接到直流电源的正极的第三开关; 连接到第三开关的另一个端子的第四开关; 连接到第四开关的另一个端子和直流电源的负极的第五开关; 以及电容器，连接到第一开关的另一端子和第四开关的另一端子。 半导体元件的栅极连接到所述第三开关的另一个端子; 并且半导体元件的源极连接到直流电源的负极侧。

    Semiconductor device and manufacturing method thereof and power supply apparatus using the same
    13.
    发明申请
    Semiconductor device and manufacturing method thereof and power supply apparatus using the same 审中-公开
    半导体装置及其制造方法以及使用其的电源装置

    公开(公告)号：US20080217684A1

    公开(公告)日：2008-09-11

    申请号：US12011286

    申请日：2008-01-25

    申请人： Takayuki Hashimoto ,  Takashi Hirao ,  Masaki Shiraishi

    发明人： Takayuki Hashimoto ,  Takashi Hirao ,  Masaki Shiraishi

    IPC分类号： H01L27/088 ,  H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7813 ,  H01L21/823437 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66727 ,  H01L29/66734

    摘要： A semiconductor device comprises a trench-gate type field-effect transistor on a semiconductor substrate having a first main surface and a second main surface oppositely positioned in a thickness direction, wherein the trench-gate type field-effect transistor comprises a first semiconductor region at the first main surface side; a second semiconductor region at the second main surface; a semiconductor well region between the first semiconductor region and the second semiconductor region; a trench formed so as to protrude in a first direction intersecting the second main surface; a gate electrode formed on an inner surface of the trench via a gate insulating film, and a bottom of the gate electrode is in the first semiconductor region, and a well bottom has a well deep portion and a well shallow portion, and the well deep portion is in a region more distant from the gate insulating film compared to the well shallow portion.

    摘要翻译： 半导体器件包括在半导体衬底上的沟槽栅型场效应晶体管，其具有在厚度方向上相对定位的第一主表面和第二主表面，其中沟槽栅型场效应晶体管包括第一半导体区， 第一主表面; 在第二主表面处的第二半导体区域; 在所述第一半导体区域和所述第二半导体区域之间的半导体阱区域; 形成为沿与第二主表面相交的第一方向突出的沟槽; 经由栅极绝缘膜形成在沟槽的内表面上的栅极电极和栅电极的底部位于第一半导体区域中，阱底部具有阱深部和浅部，阱深 与较浅的部分相比，部分位于比栅极绝缘膜更远的区域。

    Power MISFET, semiconductor device and DC/DC converter
    15.
    发明授权
    Power MISFET, semiconductor device and DC/DC converter 有权
    电源MISFET，半导体器件和DC / DC转换器

    公开(公告)号：US08319289B2

    公开(公告)日：2012-11-27

    申请号：US12005918

    申请日：2007-12-27

    申请人： Masaki Shiraishi ,  Noboru Akiyama ,  Takayuki Hashimoto

    发明人： Masaki Shiraishi ,  Noboru Akiyama ,  Takayuki Hashimoto

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L29/7816 ,  H01L21/823814 ,  H01L21/823878 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/456 ,  H01L29/665 ,  H01L29/66689

    摘要： A technique for suppressing lowering of withstand voltage and lowering of breakdown resistance and reducing a feedback capacitance of a power MISFET is provided. A lateral power MISFET that comprises a trench region whose insulating layer is formed shallower than an HV-Nwell layer is provided in the HV-Nwell layer (drift region) formed on a main surface of a semiconductor substrate in a direction from the main surface to the inside. The lateral power MISFET has an arrangement on a plane of the main surface including a source layer (source region) and a drain layer (drain region) arranged at opposite sides to each other across a gate electrode (first conducting layer), and a dummy gate electrode (second conducting layer) that is different from the gate electrode is arranged between the gate electrode and the drain layer.

    摘要翻译： 提供了用于抑制耐压降低和击穿电阻降低并降低功率MISFET的反馈电容的技术。 在半导体衬底的主表面上形成的HV-Nwell层（漂移区域）中，沿着从主表面到主体表面的方向，设置包括其绝缘层形成为比HV-Nwell层浅的沟槽区域的横向功率MISFET 里面。 横向功率MISFET具有在主表面的平面上的布置，包括在栅极电极（第一导电层）上彼此相对设置的源极层（源极区域）和漏极层（漏极区域） 与栅电极不同的栅电极（第二导电层）配置在栅电极和漏极层之间。