-
11.发明授权APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical 失效使用有机硅烷，氧化剂和催化剂形成的氢根形成氧化硅的APCVD方法公开(公告)号：US06323142B1
公开(公告)日：2001-11-27
申请号：US08706666
申请日：1996-09-06
IPC分类号： H01L2100
CPC分类号： H01L21/02126 , C03C17/245 , C03C2218/1525 , C03C2218/153 , C23C16/402 , H01L21/02131 , H01L21/0214 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/31612
摘要： In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.
摘要翻译： 在半导体器件的制造中形成各种类型的绝缘膜时，通过添加活性氢和氮氧化物在成膜期间将碳气化到CHx，COH等中以降低成膜期间的碳含量，以及将杂质 因为碱金属得到改善。
-
公开(公告)号：US5017502A
公开(公告)日：1991-05-21
申请号：US468069
申请日：1990-01-22
申请人： Mitsunori Sakama , Takeshi Fukada , Naoya Sakamoto , Nobumitsu Amachi , Shigenori Hayashi , Takashi Inushima
发明人： Mitsunori Sakama , Takeshi Fukada , Naoya Sakamoto , Nobumitsu Amachi , Shigenori Hayashi , Takashi Inushima
IPC分类号： G06K7/10 , H01L27/146 , H01L31/105 , H04N5/228 , H04N5/369
CPC分类号： G06K7/10841 , H01L27/14643 , H01L31/1055 , H04N3/1581 , Y10S148/092
摘要： Disclosed is a method for producing image sensors having a plurality of sensing elements including the formation of parallel separating grooves by laser irradiation, the filling of the grooves with an insulating film, and the subsequent provision of a groove in the insulating film in a direction diagonal to the parallel grooves for metallization.
-
公开(公告)号：US4936251A
公开(公告)日：1990-06-26
申请号：US725596
申请日：1985-04-22
IPC分类号： C23C16/458 , C23C16/54
CPC分类号： C23C16/4587 , C23C16/54
摘要： A vapor phase reaction apparatus includes a reaction chamber defined by first and second walls fixed opposite each other. Third and fourth walls are introduced into the reaction chamber already having affixed to them a substrate for deposition. A reactive gas is introduced into the reaction chamber for chemical vapor deposition onto the substrate.
摘要翻译： 气相反应装置包括由彼此相对固定的第一和第二壁限定的反应室。 将第三和第四壁引入反应室中，已经固定在其上用于沉积的基底。 反应气体被引入到反应室中用于化学气相沉积到基底上。
-
14.发明授权
公开(公告)号：US5866932A
公开(公告)日：1999-02-02
申请号：US734127
申请日：1996-10-21
IPC分类号： H01L21/316 , H01L27/01 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L21/02131 , H01L21/02126 , H01L21/02205 , H01L21/02216 , H01L21/02274 , H01L21/31612 , H01L21/31629
摘要： A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.
-
公开(公告)号：US5837614A
公开(公告)日：1998-11-17
申请号：US781930
申请日：1997-01-07
IPC分类号： H01L21/316 , H01L21/31
CPC分类号： H01L21/02131 , H01L21/02126 , H01L21/02205 , H01L21/02216 , H01L21/02274 , H01L21/31612 , H01L21/31629
摘要： A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.
-
公开(公告)号：US5017828A
公开(公告)日：1991-05-21
申请号：US342857
申请日：1989-04-25
申请人： Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Toru Takayama
发明人： Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Toru Takayama
IPC分类号： H01L21/205 , H01L27/146 , H01L31/0248 , H01L31/10 , H01L31/105 , H04N5/335 , H04N5/369
CPC分类号： H01L31/1055 , H01L27/14643
摘要： An improved image sensor made of photosensitive semiconductor materials with a number of pixels each including an n-type semiconductor layer, a p-type semiconductor layer and an intrinsic semiconductor layer disposed between the n-type and p-type layers. The n-type and p-type layers are made from a semiconductor material having a high resistivity. The high resistivity of the n-type layer and the p-type layer functions to prevent crosstalk currents from passing between the pixels.
摘要翻译： 一种由具有多个像素的光敏半导体材料制成的改进的图像传感器，每个像素均包括n型半导体层，p型半导体层和设置在n型层和p型层之间的本征半导体层。 n型和p型层由具有高电阻率的半导体材料制成。 n型层和p型层的高电阻率起到防止串扰电流在像素之间通过的作用。
-
公开(公告)号：US07393723B2
公开(公告)日：2008-07-01
申请号：US10793909
申请日：2004-03-08
IPC分类号： H01L21/00
CPC分类号： H01L29/66757 , H01L29/78612 , Y10S438/974
摘要： A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.
摘要翻译： 一种形成层叠层的半导体器件的制造方法包括以下步骤：在层压膜形成之前，通过活性氢在其上形成层压膜的表面的至少一部分上减少含有单键碳的污染物，并形成 在其上形成层压膜的表面上的层压膜。
-
公开(公告)号：US06703264B2
公开(公告)日：2004-03-09
申请号：US09852063
申请日：2001-05-08
IPC分类号： H01L2100
CPC分类号： H01L29/66757 , H01L29/78612 , Y10S438/974
摘要： A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.
-
公开(公告)号：US5330578A
公开(公告)日：1994-07-19
申请号：US849738
申请日：1992-03-11
IPC分类号： C23C16/458 , C23C16/509 , H01J37/32 , C23C16/50 , C23C16/54
CPC分类号： H01J37/32091 , C23C16/4587 , C23C16/5096 , H01J37/32532
摘要： A plasma gaseous reaction apparatus including a reaction chamber, a system for supplying reaction gas to the reaction chamber and an exhaust system for exhausting unnecessary reaction products. Specifically, the apparatus includes a pair of facing electrodes disposed in the reaction chamber which are covered by shields except the area in which the electrodes face each other. The shields may include a first and second shield wherein the inner first shield is electrically insulated from the electrodes and the outer second shield is kept at earth potential. The apparatus further includes a substrate container for supporting substrates which surrounds the substrates by a frame. The outside of the substrate container is kept in the earth potential and is covered by a conductor plate electrically insulated from the container. The shields and substrate container are configured such that plasma generated by electric power supplied by the electrodes is confined in a space surrounded by the shields and the container.
摘要翻译： 一种等离子气体反应装置，包括反应室，用于向反应室供应反应气体的系统和用于排出不必要的反应产物的排气系统。 具体地说，该装置包括设置在反应室中的一对面对电极，除了电极彼此面对的区域之外，被屏蔽物覆盖。 屏蔽件可以包括第一和第二屏蔽件，其中内部第一屏蔽件与电极电绝缘，并且外部第二屏蔽件保持在地电位。 该装置还包括用于支撑通过框架围绕基板的基板的基板容器。 基板容器的外部保持在地电势中并被与容器电绝缘的导体板覆盖。 屏蔽和基板容器被配置为使得由电极提供的电力产生的等离子体被限制在由屏蔽件和容器包围的空间中。
-
20.发明授权Method for making a high contrast liquid crystal display including laser scribing opaque and transparent conductive strips simultaneously 失效用于制造高对比度液晶显示器的方法，包括同时激光划刻不透明和透明导电条
公开(公告)号：US5187601A
公开(公告)日：1993-02-16
申请号：US807748
申请日：1991-12-17
申请人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Takashi Fuki , Ichiro Takayama
发明人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Takashi Fuki , Ichiro Takayama
IPC分类号： G02F1/1335 , G02F1/1343
CPC分类号： G02F1/134336 , G02F1/133512
摘要： A method for forming a resistance-reducing electrode pattern in an electrooptical device includes the steps of: forming a transparent conductive film on a substrate; forming a plurality of opaque conductive strips on the film; and scribing the combined structure with a laser through the two layers to simultaneously divide the conductive strips into two parts and pattern the transparent film. In this manner, a pattern of transparent electrodes bordered with an opaque electrode pattern is formed. In specific embodiments, the opaque strips may comprise chromium, and the opaque conductive strips may be formed prior to application of the steps above by laser scribing an applied opaque film layer.
摘要翻译： 在电光装置中形成电阻减少电极图案的方法包括以下步骤：在衬底上形成透明导电膜; 在所述膜上形成多个不透明导电条; 并通过两层用激光刻划组合结构，同时将导电条分成两部分，并对透明膜进行图案化。 以这种方式，形成与不透明电极图案相邻的透明电极的图案。 在具体实施例中，不透明条可以包括铬，并且不透明导电条可以在施加上述步骤之前通过激光划刻施加的不透明膜层而形成。
-
-
-
-
-
-
-
-
-
搜索结果
73 条记录 (耗时 0.022 秒)
