公开(公告)号：US20080044668A1

公开(公告)日：2008-02-21

申请号：US11034479

申请日：2005-01-13

申请人： Christos Dimitrakopoulos ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Eric Liniger ,  Xiao Liu ,  Son Nguyen ,  Deborah Neumayer ,  Thomas Shaw

发明人： Christos Dimitrakopoulos ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Eric Liniger ,  Xiao Liu ,  Son Nguyen ,  Deborah Neumayer ,  Thomas Shaw

IPC分类号： B32B9/04 ,  B32B13/04

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249979

摘要： A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.

摘要翻译： 描述了形成具有受控双轴应力的超低介电常数层的方法，其包括以下步骤：通过PECVD和旋涂方法之一形成包含Si，C，O和H的层，并在含有非常低的浓度的环境中固化该膜 的氧和水各自小于10ppm。 还通过使用介电常数不大于2.8的方法描述材料。 本发明克服了低双轴应力低于46MPa的薄膜形成问题。

公开(公告)号：US20080009141A1

公开(公告)日：2008-01-10

申请号：US11481019

申请日：2006-07-05

申请人： Geraud Dubois ,  Stephen M. Gates ,  Alfred Grill ,  Victor Y. Lee ,  Robert D. Miller ,  Son Nguyen ,  Vishnubhai Patel

发明人： Geraud Dubois ,  Stephen M. Gates ,  Alfred Grill ,  Victor Y. Lee ,  Robert D. Miller ,  Son Nguyen ,  Vishnubhai Patel

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31695 ,  C23C16/36 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31053 ,  H01L21/31144 ,  H01L21/3148 ,  H01L21/318 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835

摘要： Methods of forming dielectric films comprising Si, C, O and H atoms (SiCOH) or Si, C, N and H atoms (SiCHN) that have improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties are provided. Electronic structures including the above materials are also included herein.

摘要翻译： 形成包含Si，C，O和H原子（SiCOH）或Si，C，N和H原子（SiCHN）的介电膜的方法，其具有改善的内聚强度（或等效地，改善的断裂韧性或降低的脆性），并且增加了对 提供诸如应力腐蚀开裂，Cu侵蚀等关键性能的水分降解。 包括上述材料的电子结构也包括在本文中。

公开(公告)号：US20070161256A1

公开(公告)日：2007-07-12

申请号：US11329560

申请日：2006-01-11

申请人： Stephen Gates ,  Alfred Grill ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

发明人： Stephen Gates ,  Alfred Grill ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

IPC分类号： H01L21/31

CPC分类号： H01L21/31695 ,  B05D1/60 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351

摘要： A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.

摘要翻译： 描述了使用至少一种有机硅前体制造具有超低介电常数（或超低k）的介电材料的方法。 本发明中使用的有机硅前体包括含有Si-O结构和牺牲有机基团的分子作为离去基团。 使用含有分子尺度牺牲离去基团的有机硅前体使得能够控制纳米尺度的孔径，控制组成和结构均匀性并简化制造过程。 此外，从单一前体制造电介质膜能够更好地控制膜中的最终孔隙率和较窄的孔径分布，导致在相同的介电常数值下更好的机械性能。

公开(公告)号：US20070117408A1

公开(公告)日：2007-05-24

申请号：US11164425

申请日：2005-11-22

申请人： Son Nguyen ,  Thomas Shaw

发明人： Son Nguyen ,  Thomas Shaw

IPC分类号： H01L21/469

CPC分类号： H01L21/31633 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337

摘要： A method for reducing the tensile stress of a low-k dielectric layer includes depositing an organosilicate layer on a substrate, the layer having an initial tensile stress value associated therewith. The layer is annealed in a reactive environment at a temperature and for a duration selected to result in the layer having a reduced tensile stress value with respect the initial tensile stress value following the completion of the annealing.

摘要翻译： 降低低k电介质层的拉伸应力的方法包括在基底上沉积有机硅酸盐层，该层具有与其相关联的初始拉伸应力值。 该层在反应环境中在选定的温度和持续时间内在反应性环境中退火，导致该层在退火完成后相对于初始拉伸应力值具有降低的拉伸应力值。

公开(公告)号：US20070007681A1

公开(公告)日：2007-01-11

申请号：US11267984

申请日：2005-11-07

申请人： Cyril Chevillard ,  Son Nguyen ,  Gerhard Guenther ,  Vincent Barre

发明人： Cyril Chevillard ,  Son Nguyen ,  Gerhard Guenther ,  Vincent Barre

IPC分类号： B29C45/76

CPC分类号： B29C48/10 ,  B29C48/18 ,  B29C48/92 ,  B29C49/04 ,  B29C2948/92047 ,  B29C2948/922 ,  B29C2948/92314 ,  B29K2023/06 ,  B29K2023/0625 ,  B29K2023/0633 ,  B29K2023/0641 ,  B29K2023/065 ,  B29K2105/0008 ,  B29K2105/0032 ,  B29K2105/0044 ,  B29K2105/005

摘要： Improving polyethylene film properties may be accomplished by measuring the specific energy input (SEI) to the extruder and then adjusting a process parameter in response to a change in the SEI and/or by introducing both a free radical initiator and an alkali earth metal stearate into the polymerization. Alternatively or in addition thereto, selecting the optimum free radical initiator for a particular polyethylene resin polymerized in the presence of a selected catalyst between two resin properties may be accomplished by examining the ratio of: % ⁢   ⁢ variation ⁢   ⁢ in ⁢   ⁢ a ⁢   ⁢ first ⁢   ⁢ property % ⁢   ⁢ variation ⁢   ⁢ in ⁢   ⁢ a ⁢   ⁢ second ⁢   ⁢ property of polyethylene resins individually made with each free radical initiator under consideration. The free radical initiator may be oxygen, peroxides, peroxyketals, peroxyesters, and/or dialkyl peroxides.

公开(公告)号：US20060278574A1

公开(公告)日：2006-12-14

申请号：US10557269

申请日：2004-06-04

申请人： Ahamad Khan ,  Steven Barboza ,  Son Nguyen ,  Michael Whitlock

发明人： Ahamad Khan ,  Steven Barboza ,  Son Nguyen ,  Michael Whitlock

IPC分类号： B01D27/00

CPC分类号： B01D39/163 ,  B01D29/111 ,  B01D39/02 ,  B01D39/1623 ,  B01D46/0001 ,  B01D46/0067 ,  B01D46/2411 ,  B01D2239/0604 ,  B01D2275/10

摘要： A hollow cylindrical fluid treatment element including at least one fluid treatment zone (Z1) comprising melt-blown fibers and at least one reinforcement element comprising yarn and/or wire, is disclosed.

摘要翻译： 公开了一种中空圆柱形流体处理元件，其包括包括熔喷纤维的至少一个流体处理区域（Z 1 SUB）和至少一个包括纱线和/或线材的增强元件。

公开(公告)号：US20060276160A1

公开(公告)日：2006-12-07

申请号：US11131847

申请日：2005-05-18

申请人： Frank Romano ,  Sampath Krishna ,  Son Nguyen ,  Jesse Rhodes ,  Philip Crewe ,  Daniel Finchley Cletheroe ,  Mark Marsden ,  Steven Walter Greendale ,  Nigel Watson ,  Ian Stroud ,  Timothy Howe ,  Gerard Smith

发明人： Frank Romano ,  Sampath Krishna ,  Son Nguyen ,  Jesse Rhodes ,  Philip Crewe ,  Daniel Finchley Cletheroe ,  Mark Marsden ,  Steven Walter Greendale ,  Nigel Watson ,  Ian Stroud ,  Timothy Howe ,  Gerard Smith

IPC分类号： H04B1/16 ,  H04B1/38 ,  H04M1/00

CPC分类号： G01S13/825 ,  H04W52/0245 ,  Y02D70/00

摘要： A vehicle locating unit with improved power management. A receiver receives a signal from a network of communication sources. A signal strength monitoring subsystem determines which of the communication sources are transmitting the strongest signals. A power management subsystem is responsive to the signal strength monitoring subsystem and is configured to alternatively enter sleep and wake-up modes, synchronize the wake-up mode to the communication source transmitting the strongest signal, and test the signal strength of at least one additional communication source according to a predefined sequence.

公开(公告)号：US20060144171A1

公开(公告)日：2006-07-06

申请号：US11331719

申请日：2006-01-12

申请人： Eric Carlson ,  Miroslav Petro ,  Son Nguyen

发明人： Eric Carlson ,  Miroslav Petro ,  Son Nguyen

IPC分类号： G01N33/00

CPC分类号： C40B40/04 ,  G01N33/15 ,  Y10T436/119163 ,  Y10T436/255

摘要： Methods and systems for determining a dissolution profile of a sample material, and for solubilization screening of a library defined by an array comprising multiple sample materials are disclosed. The methods and systems are particularly advantageous for sampling and evaluation of very small samples, and can be advantageously applied in connection with evaluation of drug candidates.

公开(公告)号：US20060055004A1

公开(公告)日：2006-03-16

申请号：US11268106

申请日：2005-11-07

申请人： Stephen Gates ,  Christos Dimitrakopoulos ,  Alfred Grill ,  Son Nguyen

发明人： Stephen Gates ,  Christos Dimitrakopoulos ,  Alfred Grill ,  Son Nguyen

IPC分类号： H01L23/58

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Dielectric materials including elements of Si, C, O and H having specific values of mechanical properties (tensile stress, elastic modulus, hardness cohesive strength, crack velocity in water) that result in a stable ultra low k film which is not degraded by water vapor or integration processing are provided. The dielectric materials have a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa. Electronic structures including the dielectric materials of the present invention as well as various methods of fabricating the dielectric materials are also provided.

摘要翻译： 包含Si，C，O和H元素的介电材料具有机械性能（拉伸应力，弹性模量，硬度内聚强度，水中裂纹速度）的特定值，这导致稳定的超低k膜，其不被水蒸气降解 或集成处理。 电介质材料具有约2.8或更小的介电常数，小于45MPa的拉伸应力，约2至约15GPa的弹性模量和约0.2至约2GPa的硬度。 还提供了包括本发明的电介质材料的电子结构以及制造介电材料的各种方法。

公开(公告)号：US20050277302A1

公开(公告)日：2005-12-15

申请号：US11139436

申请日：2005-05-27

申请人： Son Nguyen ,  Hichem M'Saad ,  Bok Kim

发明人： Son Nguyen ,  Hichem M'Saad ,  Bok Kim

IPC分类号： C23C16/32 ,  C23C16/505 ,  C23C16/56 ,  H01L21/312 ,  H01L21/469 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L21/02126 ,  C23C16/325 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02304 ,  H01L21/3121 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods are provided for depositing a doped barrier layer material having a low dielectric constant. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate by introducing a processing gas comprising an organosilicon compound, at least one dopant containing gas, hydrogen gas, and, optionally, an inert gas into a processing chamber, reacting the processing gas to deposit the barrier layer, and depositing a first dielectric layer adjacent the barrier layer. The organosilicon compound may comprise a phenylsilane containing compound or an aliphatic organosilicon compound. The processing gas may further comprise an oxygen containing compound, a nitrogen containing compound, or both.

摘要翻译： 提供了用于沉积具有低介电常数的掺杂阻挡层材料的方法。 一方面，本发明提供了一种处理衬底的方法，包括通过将包含有机硅化合物，至少一种含有气体的掺杂剂，氢气和任选的惰性气体的处理气体引入到衬底上来沉积阻挡层， 处理室，使处理气体反应以沉积阻挡层，以及沉积与阻挡层相邻的第一介电层。 有机硅化合物可以包含含苯基硅烷的化合物或脂族有机硅化合物。 处理气体还可以包含含氧化合物，含氮化合物或两者。