公开(公告)号：US10072336B2

公开(公告)日：2018-09-11

申请号：US14926017

申请日：2015-10-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi Kato ,  Shigehiro Miura ,  Hiroyuki Kikuchi ,  Katsuyoshi Aikawa

IPC: H01L21/67 ,  C23C16/52 ,  C23C16/458 ,  C23C16/44 ,  C23C16/455 ,  H01L21/687 ,  H01J37/32

CPC classification number: C23C16/52 ,  C23C16/4409 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/4584 ,  H01J37/321 ,  H01J37/32926 ,  H01L21/67253 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

Abstract: A film forming apparatus includes a rotary table having a loading area at a first surface side thereof and revolving a substrate loaded on the loading area, a rotation mechanism rotating the loading area such that the substrate rotates around its axis, a processing gas supply mechanism supplying a processing gas to a processing gas supply area so that a thin film is formed on the substrate which repeatedly passes through the processing gas supply area the revolution of the substrate, and a control part configured to perform a calculation of a rotation speed of the substrate based on a parameter including a rotation speed of the rotary table to allow an orientation of the substrate to be changed whenever the substrate is positioned in the processing gas supply area, and to output a control signal for rotating the substrate at a calculated rotation speed.

公开(公告)号：US09601318B2

公开(公告)日：2017-03-21

申请号：US14709656

申请日：2015-05-12

Applicant: Tokyo Electron Limited

Inventor： Shigehiro Miura ,  Hitoshi Kato ,  Jun Sato ,  Toshiyuki Nakatsubo ,  Hiroyuki Kikuchi

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/507 ,  H01L21/687 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32449 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/507 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32779 ,  H01J37/32834 ,  H01L21/0228 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/68764

Abstract: A plasma processing method is provided. In the method, a distribution of an amount of processing within a surface of a substrate by a plasma process performed on a film deposited on the substrate is obtained. Next, a flow speed of the plasma processing gas is adjusted by increasing the flow speed of the plasma processing gas supplied to a first area where the amount of processing is expected to be increased or by decreasing the flow speed of the plasma processing gas supplied to a second area where the amount of processing is expected to be decreased. Then, the plasma process is performed on the film deposited on the substrate by supplying the plasma processing gas having the adjusted flow speed into the predetermined plasma process area.

公开(公告)号：US20130189849A1

公开(公告)日：2013-07-25

申请号：US13743508

申请日：2013-01-17

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Hiroyuki Kikuchi ,  Takeshi Kumagai

IPC: H01L21/02

CPC classification number: C23C16/4581 ,  C23C16/4405 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/50 ,  H01J37/32458 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32825 ,  H01J2237/032 ,  H01J2237/201 ,  H01J2237/20214 ,  H01J2237/332 ,  H01L21/0206

Abstract: A particle reducing method includes a step of supplying a first gas to a vacuum chamber in which a susceptor, formed by an insulating object and the surface of which is provided with a substrate mounting portion, is rotatably provided; a step of generating plasma from the first gas by supplying high frequency waves to a plasma generating device provided for the vacuum chamber; and a step of exposing the substrate mounting portion, on which a substrate is not mounted, to the plasma while rotating the susceptor.

Abstract translation: 一种粒子还原方法包括：将第一气体供给到真空室，其中由绝缘物体形成的基座和其表面设置有基板安装部分的基座可旋转地设置; 通过向设置在真空室中的等离子体发生装置供给高频波而从第一气体产生等离子体的步骤; 以及在旋转基座的同时将未安装基板的基板安装部暴露于等离子体的步骤。

公开(公告)号：US11495457B2

公开(公告)日：2022-11-08

申请号：US16991236

申请日：2020-08-12

Applicant: Tokyo Electron Limited

Inventor： Jun Sato ,  Hiroyuki Kikuchi ,  Takehiro Fukada

IPC: H01L21/02 ,  H01L21/762

Abstract: A film forming method includes adsorbing an aminosilane gas on a substrate having a recess in a surface of the substrate, depositing a silicon oxide film on the substrate by supplying an oxidizing gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate, and performing a modifying process of the silicon oxide film by activating a mixed gas including nitrogen gas and hydrogen gas and supplying the activated mixed gas to the silicon oxide film.

公开(公告)号：US11085113B2

公开(公告)日：2021-08-10

申请号：US16021888

申请日：2018-06-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi Kato ,  Shigehiro Miura ,  Hiroyuki Kikuchi ,  Katsuyoshi Aikawa

IPC: C23C16/52 ,  C23C16/458 ,  C23C16/455 ,  H01L21/687 ,  H01J37/32 ,  C23C16/44 ,  H01L21/67

Abstract: A film forming apparatus includes a rotary table having a loading area at a first surface side thereof and revolving a substrate loaded on the loading area, a rotation mechanism rotating the loading area such that the substrate rotates around its axis, a processing gas supply mechanism supplying a processing gas to a processing gas supply area so that a thin film is formed on the substrate which repeatedly passes through the processing gas supply area the revolution of the substrate, and a control part configured to perform a calculation of a rotation speed of the substrate based on a parameter including a rotation speed of the rotary table to allow an orientation of the substrate to be changed whenever the substrate is positioned in the processing gas supply area, and to output a control signal for rotating the substrate at a calculated rotation speed.

公开(公告)号：US09865499B2

公开(公告)日：2018-01-09

申请号：US15185238

申请日：2016-06-17

Applicant: Tokyo Electron Limited

Inventor： Jun Sato ,  Hiroyuki Kikuchi ,  Masahiro Murata ,  Shigehiro Miura

IPC: H01L21/768 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  H01L21/311 ,  C23C16/455 ,  C23C16/04 ,  C23C16/40

CPC classification number: H01L21/76802 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45534 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/68714 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76831 ,  H01L21/76898

Abstract: A method for depositing a silicon-containing film is performed by causing a silicon-containing gas to adsorb on a first surface of a depression formed in a second surface of a substrate by supplying the silicon-containing gas to the substrate. A silicon component contained in the silicon-containing gas adsorbed on the first surface of the depression is partially etched by supplying an etching gas to the substrate. A silicon-containing film is deposited in the depression by supplying a reaction gas reactable with the silicon component to the substrate so as to produce a reaction product by causing the reaction gas to react with the silicon component left in the depression without being etched.

公开(公告)号：US09711370B2

公开(公告)日：2017-07-18

申请号：US14831961

申请日：2015-08-21

Applicant: Tokyo Electron Limited

Inventor： Shigehiro Miura ,  Hitoshi Kato ,  Jun Sato ,  Hiroyuki Kikuchi

IPC: H01L21/311 ,  C23C16/52 ,  H01L21/687 ,  C23C16/455 ,  H01L21/02

CPC classification number: H01L21/31116 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A method of processing a substrate is provided. A substrate is placed on a turntable provided in a process chamber. The process chamber includes a process area for supplying an etching gas and a purge area for supplying a purge gas. The process area and the purge area are arranged along a rotational direction of the turntable and divided from each other. The etching gas is supplied into the process area. The purge gas is supplied into the purge area. The turntable rotates to cause the substrate placed on the turntable to pass through the process area and the purge area once per revolution, respectively. A film deposited on a surface of the substrate is etched when the substrate passes the process are. An etching rate of the etching or a surface roughness of the film is controlled by changing a rotational speed of the turntable.