公开(公告)号：US20160326646A1

公开(公告)日：2016-11-10

申请号：US15212774

申请日：2016-07-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Kaoru MAEKAWA ,  Tatsufumi HAMADA ,  Hiroyuki NAGAI

IPC: C23C16/455 ,  C23C16/40 ,  C23C14/14 ,  C23C14/34 ,  H01L21/768 ,  C23C16/02 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3105 ,  C23C16/18 ,  C23C16/48

CPC classification number: C23C16/45553 ,  C23C14/14 ,  C23C14/34 ,  C23C16/02 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  C23C16/401 ,  C23C16/42 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45536 ,  C23C16/481 ,  H01L21/02126 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a manganese-containing film to be formed between an underlayer and a copper film includes reacting a manganese compound gas with a nitrogen-containing reaction gas to form a nitrogen-containing manganese film on the underlayer; and reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the nitrogen-containing manganese film.

公开(公告)号：US20140084466A1

公开(公告)日：2014-03-27

申请号：US14035570

申请日：2013-09-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Tatsufumi HAMADA

IPC: H01L21/768

CPC classification number: H01L21/76864 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76856 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: According to an embodiment of present disclosure a manganese silicate film forming method for forming a manganese silicate film by transforming metal manganese to silicate. The method includes forming a metal manganese film on a silicon-containing base by using a manganese compound gas; annealing the metal manganese film in an oxidizing atmosphere after the formation of the metal manganese film; and forming a manganese silicate film by annealing the metal manganese film in a reducing atmosphere after the annealing of the metal manganese film in the oxidizing atmosphere.

Abstract translation: 根据本公开的一个实施方案，通过将金属锰转化成硅酸盐形成硅酸锰膜的硅酸锰膜形成方法。 该方法包括通过使用锰化合物气体在含硅基底上形成金属锰膜; 在形成金属锰膜之后，在氧化气氛中退火金属锰膜; 以及在金属锰膜在氧化气氛中退火后在还原气氛中退火金属锰膜，形成硅酸锰膜。

公开(公告)号：US20200035466A1

公开(公告)日：2020-01-30

申请号：US16523034

申请日：2019-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: A substrate processing apparatus includes a first mounting unit, a second mounting unit and an adjusting unit. The first mounting unit is configured to mount thereon a target substrate to be processed that is a plasma processing target. The second mounting unit is disposed to surround the first mounting unit to mount thereon a focus ring. The adjusting unit is configured to adjust a height of a peripheral portion of the target substrate with respect to a height of a central portion of the target substrate in response to consumption of the focus ring.

公开(公告)号：US20150126027A1

公开(公告)日：2015-05-07

申请号：US14598788

申请日：2015-01-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Tatsufumi HAMADA ,  Kaoru MAEKAWA

IPC: H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/28562 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76823 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76867 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device includes: forming an insulating film on a substrate where a first conductive film is formed; forming a recess in the insulating film such that the first conductive film is exposed in a portion of the recess; forming a metal oxide film to cover the insulating film and the first conductive film after forming a recess; performing a hydrogen radical treatment of irradiating the substrate with atomic hydrogen after forming a metal oxide film; and forming a second conductive film in the recess.

Abstract translation: 一种制造半导体器件的方法包括：在形成有第一导电膜的基板上形成绝缘膜; 在所述绝缘膜中形成凹部，使得所述第一导电膜在所述凹部的一部分中露出; 在形成凹部之后形成金属氧化物膜以覆盖绝缘膜和第一导电膜; 在形成金属氧化物膜之后进行用原子氢照射基板的氢自由基处理; 以及在所述凹部中形成第二导电膜。

公开(公告)号：US20170025308A1

公开(公告)日：2017-01-26

申请号：US15065667

申请日：2016-03-09

Applicant: Tokyo Electron Limited

Inventor： Kenji MATSUMOTO

IPC: H01L21/768 ,  H01L21/306

CPC classification number: H01L21/76879 ,  C23C14/021 ,  C23C14/046 ,  C23C14/16 ,  C23C16/0227 ,  C23C16/045 ,  C23C16/18 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/30604 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238

Abstract: In a method of cleaning a bottom of a via hole, a copper oxide on a surface of an underlying Cu wiring exposed at the bottom of the via hole is removed before forming a Cu wiring in a trench and the via hole extended between the trench and the underlying Cu wiring. The trench and the via hole are formed in a predetermined pattern in an interlayer insulating film of a substrate. Reducing species containing a metal in a state capable of reducing the copper oxide is supplied to the bottom of the via hole. The metal has a higher oxidation tendency than Cu and an oxide of the metal has a lower electrical resistance than the copper oxide. The copper oxide is removed by reducing the copper oxide and the oxide of the metal is generated through a reaction between the metal in the reducing species and the copper oxide.

Abstract translation: 在清洗通孔的底部的方法中，在形成沟槽中的Cu布线之前去除在通孔的底部露出的下面的Cu布线的表面上的氧化铜，并且通孔延伸在沟槽和 底层Cu布线。 在基板的层间绝缘膜中以规定的图案形成沟槽和通孔。 将能够还原氧化铜的状态的金属还原的物质供给到通孔的底部。 金属具有比Cu更高的氧化倾向，并且金属的氧化物具有比氧化铜更低的电阻。 通过还原氧化铜除去氧化铜，通过还原物质中的金属与氧化铜之间的反应产生金属的氧化物。

公开(公告)号：US20150270166A1

公开(公告)日：2015-09-24

申请号：US14643684

申请日：2015-03-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Hiroaki KAWASAKI ,  Hiroyuki NAGAI

IPC: H01L21/768

CPC classification number: H01L21/76883 ,  H01L21/02074 ,  H01L21/02167 ,  H01L21/02175 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/67103 ,  H01L21/67207 ,  H01L21/68742 ,  H01L21/76832 ,  H01L21/76834

Abstract: A method of fabricating a semiconductor device including a substrate having a copper interconnect exposed on a surface of an insulation film, wherein a layer of an anti-corrosion agent composed of organic material is formed on the surface of the copper interconnect. The method includes removing the layer of the anti-corrosion agent by heating the substrate; and forming a thin layer including manganese oxide on the surface of the copper interconnect by supplying a gas containing an organic compound of manganese to the substrate.

Abstract translation: 一种制造半导体器件的方法，该半导体器件包括在绝缘膜的表面上暴露的铜互连的衬底，其中在铜互连的表面上形成由有机材料构成的防腐蚀剂层。 该方法包括通过加热衬底去除防腐剂层; 以及在所述铜互连表面上形成包含氧化锰的薄层，向所述基板供给含有锰化合物的气体。

公开(公告)号：US20150021775A1

公开(公告)日：2015-01-22

申请号：US14510388

申请日：2014-10-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Tatsufumi HAMADA ,  Kaoru MAEKAWA

IPC: H01L23/532 ,  H01L21/02 ,  C23C16/455 ,  C23C16/06 ,  C23C16/50 ,  C23C16/46 ,  H01L21/768 ,  C23C16/40

CPC classification number: H01L23/53238 ,  C23C16/045 ,  C23C16/06 ,  C23C16/40 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device for forming a metal element-containing layer on an insulating layer in which a concave portion is formed, includes: forming an oxide layer including mainly an oxide of the metal element on the insulating layer including the concave portion; and forming a silicate layer including mainly a silicate of the metal element by making the oxide layer into silicate by annealing under a reducing atmosphere.

Abstract translation: 一种在形成有凹部的绝缘层上形成含金属元素层的半导体装置的制造方法，其特征在于，包括：在包括所述凹部的绝缘层上形成主要包含所述金属元素的氧化物的氧化物层; 通过在还原气氛下进行退火，使氧化物层成为硅酸盐，形成主要由金属元素的硅酸盐构成的硅酸盐层。

公开(公告)号：US20140190409A1

公开(公告)日：2014-07-10

申请号：US14204551

申请日：2014-03-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji MATSUMOTO ,  Hidenori MIYOSHI

IPC: H01L21/02

CPC classification number: H01L21/0262 ,  C23C16/40 ,  C23C16/406 ,  C23C16/4404 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/68742 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76855

Abstract: The present disclosure relates to a film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air, wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber.

Abstract translation: 本发明涉及一种成膜设备，用于通过在被配置为排出空气的处理室内使用有机金属原料气体在待处理物体的表面上形成薄膜，其中疏水层安装在 暴露于处理室内的大气的构件。