公开(公告)号：US20150107631A1

公开(公告)日：2015-04-23

申请号：US14580787

申请日：2014-12-23

Applicant: Tokyo Electron Limited

Inventor： Takao Inada ,  Naoyuki Okamura ,  Hidetsugu Yano ,  Yosuke Hachiya

IPC: H01L21/67

CPC classification number: H01L21/67028 ,  H01L21/67017 ,  H01L21/67051 ,  Y10S134/902

Abstract: A liquid processing method is provided for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution. In the intermediate process, an intermediate processing solution having a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution is supplied only to a rear surface of the substrate.

Abstract translation: 提供一种液体处理方法，用于通过使用处理溶液在基板的前表面上进行液体处理，然后通过使用温度低于基板的温度的冲洗溶液在基板的前表面上进行冲洗处理 处理方案。 该方法包括在液体处理和漂洗过程之间执行中间过程，用于将衬底的前表面的温度调节到高于冲洗溶液的温度并低于处理溶液的温度的温度。 在中间方法中，将仅具有比冲洗溶液的温度高且低于处理液的温度的中间处理液供给到基板的背面。

公开(公告)号：US11257692B2

公开(公告)日：2022-02-22

申请号：US16816530

申请日：2020-03-12

Applicant: Tokyo Electron Limited

Inventor： Kouji Ogura ,  Jun Nonaka ,  Takao Inada ,  Yoshinori Nishiwaki ,  Hiroshi Yoshida

IPC: H01L21/67

Abstract: A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply. A substrate is immersed in the processing bath to be processed. The mixing device generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide. The liquid path sends the mixture liquid from the mixing device to the processing bath. The silicon solution supply is connected to at least one of the liquid path and the processing bath, and supplies a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixing device.

公开(公告)号：US20200289994A1

公开(公告)日：2020-09-17

申请号：US16816379

申请日：2020-03-12

Applicant: Tokyo Electron Limited

Inventor： Jun Nonaka ,  Takao Inada ,  Kouji Ogura

IPC: B01F3/08 ,  B01F11/02 ,  B01F13/02 ,  B01F15/06

Abstract: A mixing apparatus includes a phosphoric acid aqueous solution supply, an additive supply, a tank, a phosphoric acid aqueous solution supply path and an additive supply path. The phosphoric acid aqueous solution supply is configured to supply a phosphoric acid aqueous solution. The additive supply is configured to supply an additive configured to suppress precipitation of a silicon oxide. The phosphoric acid aqueous solution supply path is configured to connect the phosphoric acid aqueous solution supply with the tank. The additive supply path is configured to connect the additive supply with the tank. The additive is supplied while fluidity is imparted to the phosphoric acid aqueous solution supplied from the phosphoric acid aqueous solution supply into the tank.

公开(公告)号：US20200211865A1

公开(公告)日：2020-07-02

申请号：US16727007

申请日：2019-12-26

Applicant: Tokyo Electron Limited

Inventor： Takahiko Otsu ,  Kazuya Koyama ,  Takao Inada

IPC: H01L21/67 ,  B05B12/14

Abstract: A substrate processing apparatus includes: a processing tank that stores a processing liquid for performing a liquid processing on a plurality of substrates; a substrate support that supports the plurality of substrates such that main surfaces of each of the plurality of substrates follow a vertical direction in the processing tank; a processing liquid ejection unit provided below the plurality of substrates supported by the substrate support, and generates an ascending flow of the processing liquid in the processing tank; and a rectifying section that adjusts flow of the processing liquid in a side space formed between a first side wall of the processing tank and a first substrate having a main surface facing the first side wall of the processing tank among the plurality of substrates.

公开(公告)号：US20190122906A1

公开(公告)日：2019-04-25

申请号：US16165118

申请日：2018-10-19

Applicant: Tokyo Electron Limited

Inventor： Jian Zhang ,  Takao Inada ,  Hisashi Kawano ,  Seigo Fujitsu ,  Hideaki Sato ,  Teruaki Konishi ,  Toshiyuki Shiokawa ,  Koji Ogura ,  Hiroshi Yoshida

IPC: H01L21/67 ,  H01L21/306

Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.

公开(公告)号：US12068175B2

公开(公告)日：2024-08-20

申请号：US17577143

申请日：2022-01-17

Applicant: Tokyo Electron Limited

Inventor： Kouji Ogura ,  Jun Nonaka ,  Takao Inada ,  Yoshinori Nishiwaki ,  Hiroshi Yoshida

IPC: H01L21/67

CPC classification number: H01L21/67086 ,  H01L21/67017

Abstract: A substrate processing method includes: generating a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide in a tank and circulating the mixture liquid through a circulation path that exits and returns to the tank, the circulation path including a back pressure valve; sending the mixture liquid to a processing bath through a liquid path diverging from the circulation path and positioned upstream from the back pressure valve; and supplying a silicon-containing compound aqueous solution to the mixture liquid generated in the generating. The back pressure valve is fully open in the generating and throttled in the sending. A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply.

公开(公告)号：US11309194B2

公开(公告)日：2022-04-19

申请号：US15883481

申请日：2018-01-30

Applicant: Tokyo Electron Limited

Inventor： Koji Tanaka ,  Toshiyuki Shiokawa ,  Koji Yamashita ,  Hiroyuki Masutomi ,  Hitoshi Kosugi ,  Takao Inada ,  Takashi Ikeda ,  Tsukasa Hirayama

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677

Abstract: A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.

公开(公告)号：US20210335621A1

公开(公告)日：2021-10-28

申请号：US17367975

申请日：2021-07-06

Applicant: Tokyo Electron Limited

Inventor： Tsukasa Hirayama ,  Takao Inada ,  Hironobu Hyakutake ,  Kazuya Koyama ,  Hisashi Kawano

IPC: H01L21/311 ,  B08B3/08 ,  H01L21/67 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/306

Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.

公开(公告)号：US10923368B2

公开(公告)日：2021-02-16

申请号：US16164919

申请日：2018-10-19

Applicant: Tokyo Electron Limited

Inventor： Takao Inada ,  Hisashi Kawano ,  Hiroki Ohno

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/311

Abstract: A substrate processing apparatus according to an embodiment includes a substrate processing tank, a temperature adjustment unit, and a controller. The substrate processing tank is configured to perform an etching processing by immersing a substrate in a phosphoric acid processing liquid therein. The temperature adjustment unit is configured to adjust the temperature of the phosphoric acid processing liquid. The controller is configured to control the temperature adjustment unit to lower the temperature of the phosphoric acid processing liquid as the etching processing proceeds.

公开(公告)号：US20200251343A1

公开(公告)日：2020-08-06

申请号：US16778267

申请日：2020-01-31

Applicant: Tokyo Electron Limited

Inventor： Tsukasa Hirayama ,  Takao Inada ,  Hironobu Hyakutake ,  Kazuya Koyama ,  Hisashi Kawano

IPC: H01L21/311 ,  B08B3/08 ,  H01L21/02 ,  H01L21/67

Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.