公开(公告)号：US4523211A

公开(公告)日：1985-06-11

申请号：US473243

申请日：1983-03-08

申请人： Kiyoshi Morimoto ,  Toshinori Takagi

发明人： Kiyoshi Morimoto ,  Toshinori Takagi

IPC分类号： H01L27/00 ,  H01L21/20 ,  H01L21/203 ,  H01L21/316 ,  H01L21/74 ,  H01L21/822 ,  H01L21/86 ,  H01L27/12

CPC分类号： H01L27/12 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02631 ,  H01L21/31604 ,  H01L21/743 ,  H01L21/8221 ,  H01L2924/00011

摘要： A semiconductor device having multi-layered structure is disclosed. The semiconductor device comprises a first semiconductor layer, a second semiconductor layer, a beryllium oxide (BeO) film for insulating between the first and second semiconductor layers, wherein at least one of the semiconductor layers is grown on the BeO film to be regulated by the crystalline structure of the beryllium oxide.

摘要翻译： 公开了一种具有多层结构的半导体器件。 半导体器件包括第一半导体层，第二半导体层，用于在第一和第二半导体层之间绝缘的氧化铍（BeO）膜，其中至少一个半导体层在BeO膜上生长以由 铍氧化物的晶体结构。

公开(公告)号：US4500741A

公开(公告)日：1985-02-19

申请号：US498168

申请日：1983-05-25

申请人： Kiyoshi Morimoto ,  Toshinori Takagi

发明人： Kiyoshi Morimoto ,  Toshinori Takagi

IPC分类号： H01L31/04 ,  B32B15/08 ,  H01L27/142 ,  H01L31/052 ,  H01L31/058 ,  H01L35/00 ,  H01L35/22 ,  H01L35/30 ,  H01L37/00

CPC分类号： H01L35/22 ,  H01L31/046 ,  H01L35/00 ,  H02S10/10 ,  Y02E10/52

摘要： An energy conversion element is disclosed which is capable of efficiently converting light and thermal energies into electrical energy. The element comprises a thermoelectric material and a photoelectric material which are different in type and joined together and is capable of efficiently converting solar energy incident on the junction between the both materials into electrical energy. The thermoelectric material is most suitably formed of a transition element-silicon compound.

摘要翻译： 公开了能够有效地将光能和热能转换成电能的能量转换元件。 该元件包括热电材料和光电材料，其类型不同并且结合在一起，并且能够将入射到两材料之间的接合处的太阳能有效地转换为电能。 热电材料最适合地由过渡元素 - 硅化合物形成。

公开(公告)号：US4281029A

公开(公告)日：1981-07-28

申请号：US80220

申请日：1979-10-01

申请人： Toshinori Takagi ,  Kiyoshi Morimoto ,  Hiroshi Watanabe

发明人： Toshinori Takagi ,  Kiyoshi Morimoto ,  Hiroshi Watanabe

IPC分类号： C01G15/00 ,  B01J12/00 ,  B01J12/02 ,  C23C14/06 ,  C23C14/22 ,  C23C14/24 ,  C23C14/32 ,  C30B23/02 ,  C30B23/08 ,  C30B25/06 ,  H01L21/203 ,  B05D3/06 ,  C23C13/08 ,  H01L7/36

CPC分类号： C23C14/228 ,  C23C14/221 ,  C23C14/24 ,  C23C14/243 ,  C30B23/02 ,  C30B23/08 ,  Y10S148/006 ,  Y10S148/045 ,  Y10S148/064 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/169 ,  Y10S438/935 ,  Y10S438/961 ,  Y10S438/971

摘要： A method of coating which comprises the steps of separately vaporizing a plurality of substances containing the component elements of a desired compound and placed in a plurality of crucibles to form vapors of the substances, mixing the vapors in a heated mixing chamber to form a mixed vapor, jetting the mixed vapor into a vacuum region to form clusters, ionizing the clusters to form cluster ions, and accelerating the cluster ions to make them impinge on a substrate.An apparatus for coating which comprises a plurality of crucibles for separately vaporizing substances containing the component elements of a desired compound to form vapors of the substances, a mixing chamber for heating and mixing the vapors introduced therein to form a mixed vapor, the mixing chamber having at least one injection hole for jetting the mixed vapor into a vacuum region, communication pipes for connecting the mixing chamber to the crucibles, an ionization chamber for ionizing clusters produced from the mixed vapor jetted from the mixing chamber, means for accelerating cluster ions produced in the ionization chamber and making them impinge on a substrate, and a substrate holder for holding the substrate.

摘要翻译： 一种涂覆方法，其包括以下步骤：将含有所需化合物的组分元素的多种物质分开蒸发并放置在多个坩埚中以形成物质的蒸气，将蒸气混合在加热的混合室中以形成混合蒸气 将混合的蒸汽喷射到真空区域以形成簇，使簇离子形成簇离子，并加速簇离子使其撞击在基底上。 一种用于涂覆的装置，包括用于单独蒸发含有所需化合物的组分元素的物质的坩埚，以形成物质的蒸气;混合室，用于加热和混合引入其中的蒸气以形成混合蒸气，所述混合室具有 用于将混合蒸汽喷射到真空区域中的至少一个喷射孔，用于将混合室连接到坩埚的连通管，用于从由混合室喷射的混合蒸气产生的离子簇的离子化室，用于加速由 电离室并使其撞击在基板上，以及用于保持基板的基板支架。

公开(公告)号：US4197814A

公开(公告)日：1980-04-15

申请号：US870096

申请日：1978-01-17

申请人： Toshinori Takagi ,  Kiyoshi Morimoto

发明人： Toshinori Takagi ,  Kiyoshi Morimoto

IPC分类号： C23C14/22 ,  C30B23/08 ,  C30B25/06 ,  H01L21/203 ,  H01L21/208 ,  H01L21/363 ,  H01L31/04 ,  H01L33/02 ,  C23C13/12

CPC分类号： C23C14/221 ,  C30B23/08 ,  H01L21/02521 ,  H01L21/02631

摘要： An apparatus for forming compound semiconductors, which has a plurality of closed type crucibles for separately holding and vaporizing the component elements of a desired compound semiconductor thin-film, the crucibles each having at least one injection nozzle, a plurality of temperature control sections for separately controlling vapor pressures inside the crucibles so that the vapors jetted from the injection nozzles of the crucibles may form clusters, a plurality of ionization chambers provided in the vicinity of the injection nozzles of the crucibles respectively for ionizing the clusters, and acceleration power supplies provided between a substrate and the ionization chambers for giving kinetic energy to the cluster ions to make them impinge on the surface of the substrate so as to form a thin film thereon.

摘要翻译： 一种用于形成化合物半导体的装置，其具有多个封闭型坩埚，用于分别保持和蒸发所需化合物半导体薄膜的组分元素，所述坩埚各自具有至少一个注射喷嘴，多个温度控制部分用于分别 控制坩埚内的蒸汽压，使得从坩埚的喷嘴喷射的蒸汽可以形成簇，分别设置在坩埚的喷嘴附近的多个离子化室，用于电离簇，加速电源 衬底和电离室，用​​于向簇离子提供动能，使它们撞击到衬底的表面上，以便在其上形成薄膜。

公开(公告)号：US4161418A

公开(公告)日：1979-07-17

申请号：US908748

申请日：1978-05-23

申请人： Kiyoshi Morimoto ,  Yukihiko Utamura ,  Toshinori Takagi

发明人： Kiyoshi Morimoto ,  Yukihiko Utamura ,  Toshinori Takagi

IPC分类号： C30B23/08 ,  H01L21/203 ,  H01L21/363 ,  H01L29/04 ,  H01L31/0224 ,  H01L31/18 ,  C23C15/00

CPC分类号： H01L31/1804 ,  C30B23/08 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02631 ,  H01L29/04 ,  H01L31/022425 ,  Y02E10/547 ,  Y02P70/521

摘要： A p-n junction type solid-state element having at least a pair of p-n junction type semiconductor layers formed of a p-type semiconductor and an n-type semiconductor joined with each other and a method of producing the same, in which the p-type semiconductor and n-type semiconductor are formed and joined by forming at least one of the semiconductors using what is called the ionized-cluster-beam deposition process which evaporates a material to be deposited to form a vapor, injects the vapor into a vacuum region to form clusters of atoms, ionizes the clusters and electrically accelerates ionized clusters onto a substrate thereby forming a layer thereon.

摘要翻译： 具有由p型半导体和n型半导体形成的至少一对pn结型半导体层的pn结型固体元件及其制造方法，其中p型 通过使用蒸发要沉积的材料蒸发以形成蒸气的所谓的离子化聚束束沉积方法形成至少一个半导体并形成半导体和n型半导体，将蒸汽注入真空区域 形成原子簇，使簇电离并将离子簇电子加速到衬底上，从而在其上形成层。

公开(公告)号：US4152478A

公开(公告)日：1979-05-01

申请号：US625041

申请日：1975-10-23

申请人： Toshinori Takagi

发明人： Toshinori Takagi

IPC分类号： C23C14/22 ,  C23C15/00

CPC分类号： C23C14/221 ,  H01J2237/0812 ,  Y10T428/249921

摘要： The present ion source called "Vaporized-Metal Cluster Ion Source" is adapted to produce ionized vapor aggregate (ionized cluster) instead of atomic or molecular ions in conventional ion sources. Clusters consisting of 10.sup.2 -10.sup.3 atoms are formed by the adiabatic expansion due to the ejection into a high vacuum region through a nozzle of a heated crucible and ionized by electron bombardment. By "Ionized-Cluster Beam Deposition" using the ion source, fine-quality deposited films of many kinds of materials can be obtained on metal, semiconductor and insulator substrate with strong adhesion and with a fairly high deposition rate.

摘要翻译： 称为“蒸发金属簇离子源”的本离子源适于在常规离子源中产生电离蒸气聚集体（电离簇），而不是原子或分子离子。 由102-103个原子构成的簇由于通过加热的坩埚的喷嘴喷射到高真空区域并通过电子轰击而电离而通过绝热膨胀形成。 通过使用离子源的“离子束聚束光沉积”，可以在金属，半导体和绝缘体基板上获得具有强粘附性和相当高的沉积速率的精细质量的多种材料沉积膜。

公开(公告)号：US4789500A

公开(公告)日：1988-12-06

申请号：US845531

申请日：1986-03-28

申请人： Kiyoshi Morimoto ,  Toshinori Takagi ,  Kakuei Matsubara

发明人： Kiyoshi Morimoto ,  Toshinori Takagi ,  Kakuei Matsubara

IPC分类号： C01B19/04 ,  C22C22/00 ,  G02F1/00 ,  G02F1/09 ,  H01F10/12 ,  H01F10/18 ,  G02B5/20

CPC分类号： G02F1/093 ,  G02F1/0036

摘要： An optical control element is disclosed which is capable of accomplishing the simplifying, small-sizing and lightening of the structure. The optical control element comprises a substrate exhibiting both an optical function and a magnetic function and a Cd.sub.1-x Mn.sub.x Te directly deposited on the substrate.

摘要翻译： 公开了一种光学控制元件，其能够实现结构的简化，小尺寸和减轻。 光学控制元件包括具有光学功能和磁性功能的基板和直接沉积在基板上的Cd1-xMnxTe。

公开(公告)号：US4774413A

公开(公告)日：1988-09-27

申请号：US919409

申请日：1986-10-16

申请人： Masao Okubo ,  Kiyoshi Sugaya ,  Toshinori Takagi ,  Junzo Ishikawa

发明人： Masao Okubo ,  Kiyoshi Sugaya ,  Toshinori Takagi ,  Junzo Ishikawa

IPC分类号： H05H1/22 ,  H01J27/26 ,  H01J37/08 ,  H01J27/02

CPC分类号： H01J37/08 ,  H01J27/26

摘要： An ion emmisive head for fusing a metal to emit ion beam is disclosed, wherein a fused metal is designed to infiltrate through a porous portion for flow control and to reach an extremely sharpened needle which is provided after infiltration and wherefrom the fused metal is converted to ion beam by electrical action. Thus, ionized metallic beam is rendered to have smaller width or more focused ray. Submicron technology used in the IC industry, for instance, desires far thinner, finer beam line to attain more compact circuits, which need will be responded in the present invention by disposing a tipping needle to extend out of a porous tip portion which receives the fused metal from melting zone. Appropriate combination of sharpness at the needle point and provision of a beam guiding electrode in neighborhood of an emitting needle point enable to produce about 0.1 micron beam width by prevention of plasma ball which will otherwise diffuse the emitted beam.

摘要翻译： 公开了用于熔化金属以发射离子束的离子发射头，其中熔融金属被设计成渗透通过多孔部分以进行流量控制，并且到达在渗透之后提供的非常锋利的针，并且将熔融金属转化为 离子束通过电动作用。 因此，使电离金属束具有较小的宽度或更聚焦的光线。 例如，在IC工业中使用的亚微米技术需要更薄更细的光束线以获得更紧凑的电路，这在本发明中将需要响应，通过设置倾翻针以延伸出多孔尖端部分，该多孔尖端部分接收熔融 金属从熔化区。 在针尖处的锋利度和在发射针尖附近提供光束引导电极的适当组合使得能够通过防止等离子体球产生大约0.1微米的光束宽度，否则会使发射的光束扩散。

公开(公告)号：US4724106A

公开(公告)日：1988-02-09

申请号：US869810

申请日：1986-05-29

申请人： Kiyoshi Morimoto ,  Toshinori Takagi

发明人： Kiyoshi Morimoto ,  Toshinori Takagi

IPC分类号： C08F2/00 ,  B29C41/50 ,  C08F2/34 ,  C08F2/54 ,  C08G85/00 ,  C23C14/12 ,  H01L21/363

CPC分类号： B29C41/50 ,  C23C14/12 ,  B29K2105/0002 ,  B29K2105/0082 ,  B29L2007/008

摘要： A process for preparing an organic film comprising the steps of ejecting an organic material in a gaseous state from an injection nozzle into a vacuum region to form clusters due to adiabatic expansion, subjecting the clusters to an intermediate state necessary for forming polymers due to abstraction and the like occurring in a part of atoms forming the clusters, and effecting polymerization reaction of the clusters on a substrate, thereby to form a dense organic film of a high quality and a high bonding strength.

摘要翻译： 一种制备有机膜的方法，包括以下步骤：将从气体状态的有机材料从喷嘴喷射到真空区域中，以形成由于绝热膨胀而形成的聚集体，使簇处于由于抽出形成聚合物所需的中间状态;以及 类似物发生在形成簇的原子的一部分中，并且在基板上进行簇的聚合反应，从而形成高质量和高粘结强度的致密有机膜。

公开(公告)号：US4581113A

公开(公告)日：1986-04-08

申请号：US246075

申请日：1981-03-20

申请人： Kiyoshi Morimoto ,  Toshinori Takagi

发明人： Kiyoshi Morimoto ,  Toshinori Takagi

IPC分类号： H01L31/04 ,  C23C14/00 ,  H01J9/233 ,  H01L21/203 ,  H01L21/205 ,  H01L31/20 ,  H01L45/00

CPC分类号： C23C14/0021 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02631 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A process for forming an amorphous silicon film consisting of silicon (Si) and hydrogen (H) bonded in a monohydride state by a cluster ion beam deposition which comprises the step of impinging ionized and non-ionized silicon (Si) and hydrogen (H) upon a substrate within a vacuum chamber in which hydrogen is maintained at a pressure of about 10.sup.-2 Torr or less.

摘要翻译： 一种用于通过聚簇离子束沉积形成以一氢化物态键合的由硅（Si）和氢（H）组成的非晶硅膜的方法，其包括将电离和非电离硅（Si）和氢（H）撞击的步骤， 在其中氢保持在约10-2 Torr或更低的压力的真空室内的衬底上。