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公开(公告)号：US4638217A
公开(公告)日：1987-01-20
申请号：US476470
申请日：1983-03-18
申请人： Masao Okubo , Kiyoshi Sugaya , Toshinori Takagi , Junzo Ishikawa
发明人： Masao Okubo , Kiyoshi Sugaya , Toshinori Takagi , Junzo Ishikawa
CPC分类号： H01J27/26
摘要： An ion source having a sintered metal head for ionizing various substances is disclosed. This ion source comprises a container made of a material which has a higher fusing point than that of the substance which is to be ionized, and a tip formed of a molded sintered metal of a higher fusing point than that of the substance which is to be ionized. The head is formed into a nearly conical shape and has a porosity capable of allowing the substance which is to be ionized to infiltrate therethrough in the molten state and the tip of the head is positioned at the opening of one end of the container for the ionizable material and arranged in such a manner that it protrudes beyond the end of the container.
摘要翻译： 公开了一种具有用于电离各种物质的烧结金属头的离子源。 该离子源包括由与要离子化的物质相比具有更高熔点的材料制成的容器，以及由与要物质相同的物质的熔点高的成型烧结金属形成的尖端 电离。 头部形成为近似圆锥形的形状，并且具有能够使被离子化的物质在熔融状态下渗透的孔隙，并且头部的顶端位于容器的一端的开口处，用于可离子化 材料并且以使其突出超过容器的端部的方式布置。
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2.发明授权
公开(公告)号：US4774413A
公开(公告)日：1988-09-27
申请号：US919409
申请日：1986-10-16
申请人： Masao Okubo , Kiyoshi Sugaya , Toshinori Takagi , Junzo Ishikawa
发明人： Masao Okubo , Kiyoshi Sugaya , Toshinori Takagi , Junzo Ishikawa
摘要： An ion emmisive head for fusing a metal to emit ion beam is disclosed, wherein a fused metal is designed to infiltrate through a porous portion for flow control and to reach an extremely sharpened needle which is provided after infiltration and wherefrom the fused metal is converted to ion beam by electrical action. Thus, ionized metallic beam is rendered to have smaller width or more focused ray. Submicron technology used in the IC industry, for instance, desires far thinner, finer beam line to attain more compact circuits, which need will be responded in the present invention by disposing a tipping needle to extend out of a porous tip portion which receives the fused metal from melting zone. Appropriate combination of sharpness at the needle point and provision of a beam guiding electrode in neighborhood of an emitting needle point enable to produce about 0.1 micron beam width by prevention of plasma ball which will otherwise diffuse the emitted beam.
摘要翻译： 公开了用于熔化金属以发射离子束的离子发射头，其中熔融金属被设计成渗透通过多孔部分以进行流量控制，并且到达在渗透之后提供的非常锋利的针，并且将熔融金属转化为 离子束通过电动作用。 因此，使电离金属束具有较小的宽度或更聚焦的光线。 例如，在IC工业中使用的亚微米技术需要更薄更细的光束线以获得更紧凑的电路，这在本发明中将需要响应，通过设置倾翻针以延伸出多孔尖端部分，该多孔尖端部分接收熔融 金属从熔化区。 在针尖处的锋利度和在发射针尖附近提供光束引导电极的适当组合使得能够通过防止等离子体球产生大约0.1微米的光束宽度，否则会使发射的光束扩散。
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公开(公告)号：US4598231A
公开(公告)日：1986-07-01
申请号：US524140
申请日：1983-02-01
申请人： Koji Matsuda , Toshinori Takagi , Junzo Ishikawa
发明人： Koji Matsuda , Toshinori Takagi , Junzo Ishikawa
CPC分类号： H01J27/18 , H01J27/022
摘要： A microwave ion source comprising a discharge chamber provided with an ion source seed material inlet and an ion outlet, a means for radiating microwaves in said discharge chamber, a means for applying a magnetic filed to the inside of said discharge chamber, a means for supplying ion source seed material to said discharge chamber through said ion source seed material inlet and an ion extraction electrode, said ion extraction electrode being made of magnetic material having a resistivity of less than 10.sup.6 .OMEGA.cm and a permeability of more than 5. The present microwave ion source has an improved ion current efficiency.
摘要翻译： 一种微波离子源，包括设置有离子源种子材料入口和离子出口的放电室，用于在所述放电室中辐射微波的装置，用于将磁场施加到所述放电室的内部的装置，用于提供 离子源种子材料通过所述离子源种子材料入口和离子提取电极到所述放电室，所述离子提取电极由电阻率小于106欧姆·厘米且磁导率大于5的磁性材料制成。本微波 离子源具有改善的离子电流效率。
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4.发明授权
公开(公告)号：US4563610A
公开(公告)日：1986-01-07
申请号：US477971
申请日：1983-03-23
申请人： Toshinori Takagi , Junzo Ishikawa , Koji Matsuda
发明人： Toshinori Takagi , Junzo Ishikawa , Koji Matsuda
CPC分类号： H01J27/028
摘要： A negative-ion source comprising means for discharging alkaline metal for discharging neutral alkaline metal particles together with alkaline metal ion particles; an electrode for generating negative ions which can serve as an extraction electrode for extracting said alkaline metal ion particles and a target bombarded with said alkaline metal ion particles and which provides with a hold for holding negative-ion seed material in the portion bombarded with said alkaline metal ion particles and an aperture for letting out negative-ion particles; and a negative-ion extraction electrode for said negative-ion particles. The present negative-ion source has an improved ion current efficiency and is compact size.
摘要翻译： 负离子源包括用于排出碱金属以排放中性碱金属颗粒与碱金属离子颗粒的装置; 用于产生负离子的电极，其可以用作提取所述碱金属离子颗粒的提取电极和用所述碱金属离子颗粒轰击的靶，并且提供用于将负离子种子材料保持在用所述碱性物质轰击的部分中的保持 金属离子颗粒和用于排出负离子颗粒的孔; 和用于所述负离子颗粒的负离子提取电极。 本负离子源具有改善的离子电流效率并且尺寸紧凑。
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公开(公告)号：US4451499A
公开(公告)日：1984-05-29
申请号：US403151
申请日：1982-07-29
IPC分类号： C23C14/06 , B01J19/08 , C01F3/02 , C04B35/08 , C23C14/00 , C23C14/08 , C23C14/32 , C23C14/56 , C30B25/02 , C30B25/06 , C30B28/12 , C30B28/14 , C30B29/16 , B05D5/12
CPC分类号： C30B25/06 , B01J19/088 , C01F3/02 , C04B35/08 , C23C14/0005 , C23C14/0021 , C23C14/32 , C30B25/02 , C30B29/16
摘要： A beryllium oxide (BeO) film is disclosed, which is produced by impinging partially ionized vapor of metal beryllium and oxygen upon a substrate.
摘要翻译： 公开了氧化铍（BeO）膜，其通过将金属铍和氧的部分电离蒸气撞击在基底上而制备。
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公开(公告)号：US4394210A
公开(公告)日：1983-07-19
申请号：US248212
申请日：1981-03-27
申请人： Kiyoshi Morimoto , Toshinori Takagi
发明人： Kiyoshi Morimoto , Toshinori Takagi
摘要： There is disclosed a process for forming a lead film by a cluster ion beam deposition which includes the step of impinging ionized and non-ionized neutral clusters having 100 to 2,000 atoms of vapor of lead loosely coupled by Van der Walls force upon a substrate within a vacuum chamber which is kept at about 10.sup.-2 Torr or less thereby forming the lead film thereon.
摘要翻译： 公开了一种用于通过聚簇离子束沉积形成引线膜的方法，该方法包括以下步骤：将具有100至2,000原子的由Van der Walls力松耦合的引线的电离和非离子化中性簇撞击在基底内 真空室保持在约10-2乇或更低，从而在其上形成引线膜。
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7.发明授权
公开(公告)号：US4217855A
公开(公告)日：1980-08-19
申请号：US11917
申请日：1979-02-13
申请人： Toshinori Takagi
发明人： Toshinori Takagi
CPC分类号： C23C14/221
摘要： The present ion source called "Vaporized-Metal Cluster Ion Source" is adapted to produce ionized vapor aggregate (ionized cluster) instead of atomic or molecular ions in conventional ion sources. Clusters consisting of 10.sup.2 -10.sup.3 atoms are formed by the adiabatic expansion due to the ejection into a high vacuum region through a nozzle of a heated crucible and ionized by electron bombardment. By "Ionized-Cluster Beam Deposition" using the ion source, fine-quality deposited films of many kinds of materials can be obtained on metal, semiconductor and insulator substrate with strong adhesion and with a fairly high deposition rate.
摘要翻译： 称为“蒸发金属簇离子源”的本离子源适于在常规离子源中产生电离蒸气聚集体（电离簇），而不是原子或分子离子。 由102-103个原子构成的簇由于通过加热的坩埚的喷嘴喷射到高真空区域并通过电子轰击而电离而通过绝热膨胀形成。 通过使用离子源的“离子束聚束光沉积”，可以在金属，半导体和绝缘体基板上获得具有强粘附性和相当高的沉积速率的精细质量的多种材料沉积膜。
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公开(公告)号：US4139857A
公开(公告)日：1979-02-13
申请号：US705696
申请日：1976-07-15
CPC分类号： H01L21/0242 , H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L29/04 , H01L31/07 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A Schottky barrier type solid-state element and a method of producing the same, the Schottky barrier type solid-state element comprising a Schottky barrier type element portion consisting of a metallic board and a semiconductor film layer provided on the metallic board, the metallic board being formed of such a metal as can form a Schottky barrier between itself and the semiconductor film layer, and a semiconductor-side terminal electrode provided on the external surface of the semiconductor film layer so as to obtain an ohmic contact therewith, wherein at least the semiconductor film layer is formed by what is called the ionized-cluster-beam deposition process.
摘要翻译： 一种肖特基势垒型固体元素及其制造方法，肖特基势垒型固体元素包括由金属板和设置在金属板上的半导体膜层构成的肖特基势垒型元件部，金属板 由能够在其与半导体膜层之间形成肖特基势垒的金属形成，并且设置在半导体膜层的外表面上以便与其形成欧姆接触的半导体侧端子电极，其中至少 半导体膜层由所谓的离子束聚束束沉积工艺形成。
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公开(公告)号：US4082636A
公开(公告)日：1978-04-04
申请号：US648296
申请日：1976-01-12
申请人： Toshinori Takagi
发明人： Toshinori Takagi
CPC分类号： C23C14/32 , Y10S148/045 , Y10S148/169
摘要： In atomistic film deposition processes employing ion plating technology, an ion source is provided which includes a filament, an ionization electrode and an ion acceleration electrode. The voltage relationships between these electrodes are altered so as to form many kinds of fine-quality deposited films in a multi-layer fashion.
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公开(公告)号：US3967125A
公开(公告)日：1976-06-29
申请号：US552607
申请日：1975-02-24
CPC分类号： H01J37/317 , C09K11/00
摘要： A method of preparing a phosphor by injection of activator ions which become luminescent centers into crystals of a base material of the phosphor comprising the steps of generating ions of an activator, accelerating the activator ions by giving kinetic energy thereto, irradiating and injecting the accelerated activator ions into the base material, and agitating the base material.An apparatus for preparing phosphor according to the method of the invention comprises an activator ion source section having an ion generating section for generating activator ions and an ion accelerating electrode section for accelerating and irradiating the generated activator ions into the base material of the phosphor, a base activating vessel section having an agitating means for containing the base material of the phosphor and for continuously circulating the same therein in order to uniformly irradiate the accelerated activator ions into the base material of the phosphor, and a vacuum system for providing a low-pressure atmosphere at least to the activator ion source section and the base activating vessel section.
摘要翻译： 通过注入成为发光中心的活化剂离子的荧光体的制备方法，该荧光体成为荧光体的基材的晶体，包括以下步骤：产生活化剂的离子，通过向其施加动能来加速活化剂离子，照射和注入加速的活化剂 离子进入基材，并搅拌基材。
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