公开(公告)号：US08729575B2

公开(公告)日：2014-05-20

申请号：US13215628

申请日：2011-08-23

申请人： Jongil Hwang ,  Hung Hung ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

发明人： Jongil Hwang ,  Hung Hung ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L31/072

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/3063 ,  H01S2304/04

摘要： The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive. The carbon concentration is equal to or less than 6E17 atoms/cm3. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(−5.35e19)2−(X−2.70e19)2}1/2−4.63e19 holds.

摘要翻译： 根据实施例的半导体发光器件包括N型氮化物半导体层，设置在N型氮化物半导体层上的氮化物半导体有源层和设置在有源层上的P型氮化物半导体层。 P型氮化物半导体层包括氮化镓铝层。 氮化镓铝层中的铟浓度在​​1E18原子/ cm3至1E20原子/ cm3之间。 碳浓度等于或小于6E17原子/ cm3。 当镁浓度用X表示，受主浓度用Y表示时，Y> {（ - 5.35e19）2-（X-2.70e19）2} 1 / 2-4.63e19成立。

公开(公告)号：US09065003B2

公开(公告)日：2015-06-23

申请号：US13405509

申请日：2012-02-27

申请人： Hisashi Yoshida ,  Koichi Tachibana ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Jongil Hwang ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Hisashi Yoshida ,  Koichi Tachibana ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Jongil Hwang ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L29/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/02

CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层， 发出峰值波长为440纳米以上的光。 对第一半导体层施加拉伸应变。 第一半导体层的边缘位错密度为5×10 9 / cm 2以下。 第一半导体层和发光层之间的晶格失配因子为0.11％以下。

公开(公告)号：US20130087760A1

公开(公告)日：2013-04-11

申请号：US13405509

申请日：2012-02-27

申请人： Hisashi Yoshida ,  Koichi Tachibana ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Jongil Hwang ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Hisashi Yoshida ,  Koichi Tachibana ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Jongil Hwang ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/04

CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层， 发出峰值波长为440纳米以上的光。 对第一半导体层施加拉伸应变。 第一半导体层的边缘位错密度为5×10 9 / cm 2以下。 第一半导体层和发光层之间的晶格失配因子为0.11％以下。

公开(公告)号：US20120032215A1

公开(公告)日：2012-02-09

申请号：US13034329

申请日：2011-02-24

申请人： Shinji SAITO ,  Jongil Hwang ,  Shinya Nunoue

发明人： Shinji SAITO ,  Jongil Hwang ,  Shinya Nunoue

IPC分类号： H01L33/60 ,  H01L33/32

CPC分类号： H01S5/164 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2304/04

摘要： A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm3 to 5E17 atoms/cm3 at a region adjacent to the p-type layer.

摘要翻译： 一个实施例的半导体发光器件包括：衬底; n型氮化物半导体的n型层; n型半导体层上的氮化物半导体的有源层; 在有源层上的p型氮化物半导体的p型层。 p型层具有脊条形状。 该器件具有形成在n型半导体层，有源层和p型半导体层的端面上的氮化物半导体的端面层。 端面垂直于脊条形状的延伸方向。 端面层具有比有源层宽的带隙。 端面层在与p型层相邻的区域具有在5E16原子/ cm3至5E17原子/ cm3范围内的Mg浓度。

公开(公告)号：US08130803B2

公开(公告)日：2012-03-06

申请号：US12299186

申请日：2008-09-04

申请人： Jongil Hwang ,  Shinji Saito ,  Shinya Nunoue

发明人： Jongil Hwang ,  Shinji Saito ,  Shinya Nunoue

IPC分类号： H01S3/04 ,  G02B6/00 ,  H01L33/00

CPC分类号： H01S5/0228 ,  F21K9/61 ,  F21Y2115/10 ,  H01S5/005 ,  H01S5/22 ,  H01S5/4056

摘要： A light emitting device includes: a semiconductor laser element having a first emission face for emitting laser light; a light guiding body buried in the concave portion of the supporting base, guiding the laser light emitted from the semiconductor laser element, and having an incident face to which the laser light enters, and a second emission face from which the laser light traveling through the light guiding body is emitted, the incident face of the light guiding body being such a curved face that an incident angle of the laser light is within a predetermined range including the Brewster angle in a plane formed by a traveling direction of the laser light and a short axis of a light emitting spot of the laser light; and a fluorescent substance scattered in the light guiding body, absorbing the laser light, and emitting the light having a different wavelength from a wavelength of the laser light.

摘要翻译： 一种发光器件包括：具有用于发射激光的第一发射面的半导体激光元件; 导光体，其被埋置在所述支撑基部的凹部中，引导从所述半导体激光元件发射的激光，并且具有入射面入射到所述入射面;以及第二射出面， 导光体发射，导光体的入射面为激光的入射角在由激光的行进方向形成的平面内的布鲁斯特角度的预定范围内的曲面， 激光发光点的短轴; 以及散射在导光体中的荧光体，吸收激光，并且发射具有与激光波长不同的波长的光。

公开(公告)号：US08526477B2

公开(公告)日：2013-09-03

申请号：US13034329

申请日：2011-02-24

申请人： Shinji Saito ,  Jongil Hwang ,  Shinya Nunoue

发明人： Shinji Saito ,  Jongil Hwang ,  Shinya Nunoue

IPC分类号： H01S5/028 ,  H01S5/22 ,  H01S5/00

CPC分类号： H01S5/164 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2304/04

摘要： A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm3 to 5E17 atoms/cm3 at a region adjacent to the p-type layer.

摘要翻译： 一个实施例的半导体发光器件包括：衬底; n型氮化物半导体的n型层; n型半导体层上的氮化物半导体的有源层; 在有源层上的p型氮化物半导体的p型层。 p型层具有脊条形状。 该器件具有形成在n型半导体层，有源层和p型半导体层的端面上的氮化物半导体的端面层。 端面垂直于脊条形状的延伸方向。 端面层具有比有源层宽的带隙。 端面层在与p型层相邻的区域具有在5E16原子/ cm3至5E17原子/ cm3范围内的Mg浓度。

公开(公告)号：US20100172388A1

公开(公告)日：2010-07-08

申请号：US12299186

申请日：2008-09-04

申请人： Jongil Hwang ,  Shinji Saito ,  Shinya Nunoue

发明人： Jongil Hwang ,  Shinji Saito ,  Shinya Nunoue

IPC分类号： H01S5/02

CPC分类号： H01S5/0228 ,  F21K9/61 ,  F21Y2115/10 ,  H01S5/005 ,  H01S5/22 ,  H01S5/4056

摘要： A light emitting device includes: a semiconductor laser element having a first emission face for emitting laser light; a light guiding body buried in the concave portion of the supporting base, guiding the laser light emitted from the semiconductor laser element, and having an incident face to which the laser light enters, and a second emission face from which the laser light traveling through the light guiding body is emitted, the incident face of the light guiding body being such a curved face that an incident angle of the laser light is within a predetermined range including the Brewster angle in a plane formed by a traveling direction of the laser light and a short axis of a light emitting spot of the laser light; and a fluorescent substance scattered in the light guiding body, absorbing the laser light, and emitting the light having a different wavelength from a wavelength of the laser light.

摘要翻译： 一种发光器件包括：具有用于发射激光的第一发射面的半导体激光元件; 导光体，其被埋置在所述支撑基部的凹部中，引导从所述半导体激光元件发射的激光，并且具有入射面入射到所述入射面;以及第二射出面， 导光体发射，导光体的入射面为激光的入射角在由激光的行进方向形成的平面内的布鲁斯特角度的预定范围内的曲面， 激光发光点的短轴; 以及散射在导光体中的荧光体，吸收激光，并且发射具有与激光波长不同的波长的光。

公开(公告)号：US08952401B2

公开(公告)日：2015-02-10

申请号：US13220059

申请日：2011-08-29

申请人： Naoharu Sugiyama ,  Taisuke Sato ,  Hiroshi Ono ,  Satoshi Mitsugi ,  Tomonari Shioda ,  Jongil Hwang ,  Hung Hung ,  Shinya Nunoue

发明人： Naoharu Sugiyama ,  Taisuke Sato ,  Hiroshi Ono ,  Satoshi Mitsugi ,  Tomonari Shioda ,  Jongil Hwang ,  Hung Hung ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L21/02 ,  H01L33/20 ,  H01L33/44 ,  H01L33/08 ,  H01L33/40 ,  H01L33/42

CPC分类号： H01L33/58 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/08 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/36 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层和低折射率层。 第一半导体层具有与第一主表面相对的第一主表面和第二主表面。 发光层具有设置在第二主表面上的有源层。 第二半导体层设置在发光层上。 低折射率层部分地覆盖第一主表面，并且折射率低于第一半导体层的折射率。

公开(公告)号：US20120292632A1

公开(公告)日：2012-11-22

申请号：US13222561

申请日：2011-08-31

申请人： Tomonari SHIODA ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Tomonari SHIODA ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/32 ,  H01L21/20 ,  H01L29/20

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.

摘要翻译： 根据一个实施例，氮化物半导体器件包括基底层和功能层。 基底层形成在形成在硅衬底上的含Al氮化物半导体层上。 基础层的厚度不小于1微米，包括GaN。 功能层设置在基础层上。 功能层包括第一半导体层。 第一半导体层的杂质浓度高于基础层中的杂质浓度，并且包括第一导电类型的GaN。

公开(公告)号：US08928000B2

公开(公告)日：2015-01-06

申请号：US13405903

申请日：2012-02-27

申请人： Hung Hung ,  Tomonari Shioda ,  Jongil Hwang ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Hung Hung ,  Tomonari Shioda ,  Jongil Hwang ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L29/15 ,  H01L21/02 ,  C30B23/02 ,  H01L31/10 ,  C30B25/18 ,  H01L33/04 ,  H01L29/778 ,  H01L29/812 ,  H01L33/12 ,  C30B29/40 ,  H01L29/20 ,  H01L33/00

CPC分类号： H01L33/04 ,  C30B23/02 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/778 ,  H01L29/7787 ,  H01L29/812 ,  H01L31/10 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×1018 cm−3 or more and less than 1×1021 cm−3. The first upper layer has a lattice constant larger than or equal to that of the first doped layer and larger than that of the first lower layer.

摘要翻译： 根据一个实施例，氮化物半导体晶片包括硅衬底，设置在硅衬底上的下部应变弛豫层，设置在下部应变弛豫层上的中间层，设置在中间层上的上部应变弛豫层和功能性 层设置在上部应变松弛层上。 中间层包括第一下层，设置在第一下层上的第一掺杂层和设置在第一掺杂层上的第一上层。 第一掺杂层的晶格常数大于或等于第一下层的晶格常数，并且含有1×1018cm-3以上且小于1×1021cm-3的杂质。 第一上层具有大于或等于第一掺杂层的晶格常数，并且大于第一下层的晶格常数。