公开(公告)号：US06378759B1

公开(公告)日：2002-04-30

申请号：US09618261

申请日：2000-07-18

申请人： Kwok Keung Paul Ho ,  Simon Chooi ,  Yi Xu ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy

发明人： Kwok Keung Paul Ho ,  Simon Chooi ,  Yi Xu ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy

IPC分类号： B23K3102

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/04953 ,  H01L2224/78 ,  H01L2924/00

摘要： A method of bonding a bonding element to a metal bonding pad comprises the following steps. A semiconductor structure having an exposed, recessed metal bonding pad within a layer opening is provided. The layer has an upper surface. A conductive cap having a predetermined thickness is formed over the metal bonding pad. A bonding element is bonded to the conductive cap to form an electrical connection with the metal bonding pad.

摘要翻译： 将接合元件接合到金属接合焊盘的方法包括以下步骤。 提供了一种在层开口内具有暴露的凹陷金属接合焊盘的半导体结构。 该层具有上表面。 在金属焊盘上形成具有预定厚度的导电盖。 接合元件结合到导电盖以与金属接合焊盘形成电连接。

公开(公告)号：US06352921B1

公开(公告)日：2002-03-05

申请号：US09619377

申请日：2000-07-19

申请人： Licheng M. Han ,  Yi Xu ,  Joseph Zhifeng Xie ,  Mei Sheng Zhou ,  Simon Chooi

发明人： Licheng M. Han ,  Yi Xu ,  Joseph Zhifeng Xie ,  Mei Sheng Zhou ,  Simon Chooi

IPC分类号： H01L214763

CPC分类号： H01L21/76834 ,  H01L21/76807 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a boron carbide layer for use as a barrier and an etch-stop layer in a copper dual damascene structure, and the structure itself are disclosed. In addition to providing a good barrier to copper diffusion, good insulating properties, high etch selectivity with respect to dielectric insulators, boron carbide also provides good electrical characteristics because of its low dielectric constant of less than 5. The amorphous boron carbide is formed in a PECVD chamber by introducing a boron source gas such as B2H6, B5H9+, and carbon source gas such as CH4 and C2H6 at a deposition temperature of about 400° C. Any one, or any combination of the passivation, etch-stop, cap layers of the damascene structure can comprise boron carbide.

公开(公告)号：US06350689B1

公开(公告)日：2002-02-26

申请号：US09839962

申请日：2001-04-23

申请人： Paul Ho ,  Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Yi Xu

发明人： Paul Ho ,  Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Yi Xu

IPC分类号： H01L2144

CPC分类号： H01L21/02074 ,  H01L21/02046 ,  H01L21/0209 ,  H01L21/32136 ,  Y10S438/906

摘要： A method of removing copper contamination from a semiconductor wafer, comprising the following steps. A semiconductor wafer having copper contamination thereon is provided. An oxidizing radical containing downstream plasma is provided from a first source (alternatively halogen (F2, Cl2, or Br2) may be used as on oxidizing agent). A vaporized chelating agent is provided from a second source. The oxidizing radical containing downstream plasma and vaporized chelating agent are mixed to form an oxidizing radical containing downstream plasma/vaporized chelating agent mixture. The mixture is directed to the copper contamination so that the mixture reacts with the copper contamination to form a volatile product. The volatile product is removed from the proximity of the wafer.

摘要翻译： 一种从半导体晶片去除铜污染的方法，包括以下步骤。 提供其上具有铜污染的半导体晶片。 从第一来源提供含有下游等离子体的氧化基团（或者可以在氧化剂上使用卤素（F2，Cl2或Br2））。 从第二来源提供蒸发的螯合剂。 将含有下游等离子体和气化螯合剂的氧化基团混合以形成含有下游等离子体/汽化螯合剂混合物的氧化基团。 混合物被引导到铜污染物，使得混合物与铜污染物反应形成挥发性产物。 从晶片附近去除挥发性产物。

公开(公告)号：US06331479B1

公开(公告)日：2001-12-18

申请号：US09398294

申请日：1999-09-20

申请人： Jianxun Li ,  Mei Sheng Zhou ,  Yi Xu ,  Simon Chooi

发明人： Jianxun Li ,  Mei Sheng Zhou ,  Yi Xu ,  Simon Chooi

IPC分类号： H01L214763

CPC分类号： H01L21/76832 ,  H01L21/31144 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76835

摘要： A method of fabricating trenches has been achieved. The method may be applied to damascene and dual damascene contacts to prevent damage to organic low dielectric constant materials due to photoresist ashing. A semiconductor substrate is provided. A first dielectric layer is deposited overlying the semiconductor substrate. A first etch stopping layer is deposited overlying the first dielectric layer. A second etch stopping layer is deposited overlying the first etch stopping layer. An optional anti-reflective coating is applied. A photoresist layer is deposited. The photoresist layer is patterned to define openings for planned trenches. The second etch stopping layer is etched through to form a hard mask for the planned trenches. The photoresist layer is stripped away by ashing where the first etch stopping layer protects the first dielectric layer from damage due to the presence of oxygen radicals. The first etch stopping layer is etched through to complete the trenches, and the integrated circuit device is completed.

摘要翻译： 已经实现了制造沟槽的方法。 该方法可以应用于镶嵌和双镶嵌接触，以防止由于光致抗蚀剂灰化而损坏有机低介电常数材料。 提供半导体衬底。 沉积在半导体衬底上的第一介电层。 第一蚀刻停止层沉积在第一介电层上。 第二蚀刻停止层沉积在第一蚀刻停止层上。 应用可选的抗反射涂层。 沉积光致抗蚀剂层。 图案化光致抗蚀剂层以限定计划沟槽的开口。 蚀刻第二蚀刻停止层以形成用于所计划的沟槽的硬掩模。 光致抗蚀剂层通过灰化被剥离，其中第一蚀刻停止层保护第一介电层免受由于氧自由基的存在的损害。 蚀刻第一蚀刻停止层以完成沟槽，并且完成集成电路器件。

公开(公告)号：US06207554B1

公开(公告)日：2001-03-27

申请号：US09351237

申请日：1999-07-12

申请人： Yi Xu ,  Jia Zhen Zheng ,  Jane C. M. Hui ,  Charles Lin ,  Yih Shung Lin

发明人： Yi Xu ,  Jia Zhen Zheng ,  Jane C. M. Hui ,  Charles Lin ,  Yih Shung Lin

IPC分类号： H01L214763

CPC分类号： H01L21/02164 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0332 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3185 ,  H01L21/32139 ,  H01L21/76819 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76837

摘要： It is the general object of the present invention to provide an improved method of fabricating semiconductor integrated circuit devices, specifically by describing an improved process of fabricating multilevel metal structures using low dielectric constant materials. The present invention relates to an improved processing methods for stable and planar intermetal dielectrics, with low dielectric constants. The first embodiment uses a stabilizing adhesion layer between the bottom, low dielectric constant layer and the top dielectric layer. The advantages are: (i) improved adhesion and stability of the low dielectric layer and the top dielectric oxide (ii) over all layer thickness of the dielectric layers can be reduced, hence lowering the parasitic capacitance of these layers. In the second embodiment, the method uses a multi-layered “hard mask” on metal interconnect lines with a silicon oxynitride DARC, dielectric anti-reflective coating on top of metal. A double coating scheme of low dielectric constant insulators are used in this application. The third embodiment uses a hard mask stack over the interconnect metal lines, with a silicon oxynitride DARC costing on top of metal, and an adhesion layer between the low dielectric material and the top dielectric layer.

摘要翻译： 本发明的总体目的是提供一种制造半导体集成电路器件的改进方法，特别是通过描述使用低介电常数材料制造多层金属结构的改进方法。 本发明涉及一种具有低介电常数的稳定和平坦的金属间电介质的改进的处理方法。 第一实施例使用底部，低介电常数层和顶部介电层之间的稳定粘合层。 优点是：（i）可以降低介电层的所有层厚度上的低介电层和顶部电介质氧化物（ii）的粘附性和稳定性，因此降低这些层的寄生电容。 在第二实施例中，该方法在具有氮氧化硅DARC的金属互连线上使用多层“硬掩模”，金属顶部具有介电抗反射涂层。 本申请中使用低介电常数绝缘体的双重涂层方案。 第三实施例在互连金属线上使用硬掩模叠层，在金属顶部成本计算氮氧化硅DARC，以及低电介质材料和顶部电介质层之间的粘合层。

公开(公告)号：US10809603B1

公开(公告)日：2020-10-20

申请号：US16563827

申请日：2019-09-07

申请人： Yi Xu

发明人： Yi Xu

IPC分类号： G03B21/00 ,  G03B21/16 ,  G03B21/20 ,  G03B21/14 ,  G03B33/08 ,  H04N9/31

摘要： The invention discloses a novel LCD projector, comprising an imaging system with single-light path system for LCD projector time-division display, a lighting system with PCS (P light converted into S light) function, a three-primary-colors LED light source with microlenses, and a heat dissipation system with dust-proof and self-cleaning function; the monochrome LCD screen of the imaging system has a high light transmittance and resolution, achieving higher brightness and resolution; the lighting part has a polarized light conversion function, which converts the useless P light into useful S light, improving the light utilization and increasing the brightness; a transparent antifouling coating is applied on the optical components of the heat dissipation system to reduce dust adsorption; ultrasonic vibrators are mounted on the optical components to shake off the dust attached; the light source uses the microlens to converge the three-primary-color LED light source to improve light efficiency and uniformity.

公开(公告)号：US20200096848A1

公开(公告)日：2020-03-26

申请号：US16198749

申请日：2018-11-21

申请人： Yi Xu

发明人： Yi Xu

IPC分类号： G03B21/16 ,  G03B21/20 ,  G03B21/00 ,  G02B27/28 ,  G02B27/30

摘要： The invention discloses a novel projector, comprising a sealed shell of electronic projector, an illumination system and a LED light source system, wherein the sealed shell is provided with an optical and internal circulation cooling assembly inside by area; the optical assembly comprises the projector working assembly. The invention is inside a sealed shell; the cold air far below normal temperature generated by semiconductor refrigeration piece takes away the heat on optical device, improving the heat dissipation efficiency. Simultaneously, because the cold air is inside a sealed shell, the optical device can be placed in a dust-free environment. The polarized light conversion prism converts the useless P light in conventional projector imagining into the useful S light, improving the light utilization, and increasing the brightness of projection at the same power. The LED light source is collimated by the collimating lens to meet PCS conversion requirement for polarized light converter.

公开(公告)号：US20140122039A1

公开(公告)日：2014-05-01

申请号：US14060743

申请日：2013-10-23

申请人： Yi Xu ,  Zhongfei Mark Zhang

发明人： Yi Xu ,  Zhongfei Mark Zhang

IPC分类号： G06F17/50

CPC分类号： G06F17/18 ,  G06K9/6232

摘要： The general problem of pattern change discovery between high-dimensional data sets is addressed by considering the notion of the principal angles between the subspaces is introduced to measure the subspace difference between two high-dimensional data sets. Current methods either mainly focus on magnitude change detection of low-dimensional data sets or are under supervised frameworks. Principal angles bear a property to isolate subspace change from the magnitude change. To address the challenge of directly computing the principal angles, matrix factorization is used to serve as a statistical framework and develop the principle of the dominant subspace mapping to transfer the principal angle based detection to a matrix factorization problem. Matrix factorization can be naturally embedded into the likelihood ratio test based on the linear models. The method may be unsupervised and addresses the statistical significance of the pattern changes between high-dimensional data sets.

摘要翻译： 高维数据集之间的模式变化发现的一般问题是通过考虑子空间之间的主角的概念来解决，以测量两个高维数据集之间的子空间差异。 当前的方法主要集中在低维数据集的幅度变化检测或处于监督框架下。 主角具有将子空间变化与幅度变化隔离的特性。 为了解决直接计算主角的挑战，矩阵分解被用作统计框架，并开发了主要子空间映射的原理，将基于主角的检测转移到矩阵分解问题。 矩阵分解可以自然地嵌入到基于线性模型的似然比检验中。 该方法可以是无监督的，并且解决了高维数据集之间的模式变化的统计意义。

公开(公告)号：US08621843B2

公开(公告)日：2014-01-07

申请号：US12915857

申请日：2010-10-29

申请人： Yi Xu ,  Leslie R. Wolf

发明人： Yi Xu ,  Leslie R. Wolf

IPC分类号： F01N3/00

CPC分类号： C10L1/026 ,  C10G2300/301 ,  C10G2300/307 ,  C10G2300/405 ,  C10L1/08 ,  C10L1/1811 ,  C10L10/02 ,  C10L10/12

摘要： A diesel fuel composition is disclosed, as well as a method for reducing NOx emissions from a diesel engine at minimum fuel consumption wherein the diesel engine operates in a low temperature combustion mode, comprising the step of adding to the diesel engine at least one diesel fuel or blending component for a diesel fuel having a combination of a low T50 in the range of from 190° C. to 280° C., a high cetane number in the range of from 31 to 60, and an effective emissions reducing amount of a nitrogen-free cetane improver.

摘要翻译： 公开了一种柴油燃料组合物，以及用于以最小燃料消耗量从柴油发动机中减少NOx排放的方法，其中所述柴油发动机在低温燃烧模式下运行，所述方法包括以下步骤：向所述柴油发动机添加至少一种柴油燃料 或混合组分，用于具有在190℃至280℃范围内的低T50的组合的柴油燃料，高十六烷值在31至60的范围内，并且有效减少排放量 无氮十六烷改良剂。

公开(公告)号：US08229244B2

公开(公告)日：2012-07-24

申请号：US12414162

申请日：2009-03-30

申请人： Amit Agrawal ,  Yi Xu ,  Ramesh Raskar

发明人： Amit Agrawal ,  Yi Xu ,  Ramesh Raskar

IPC分类号： G06K9/40 ,  H04N5/225

CPC分类号： G06T5/003 ,  G06T5/20 ,  G06T5/50 ,  G06T2207/10016 ,  G06T2207/10148 ,  G06T2207/20201

摘要： Embodiments of the invention describe a method for reducing a blur in an image of a scene. First, we acquire a set of images of the scene, wherein each image in the set of images includes an object having a blur associated with a point spread function (PSF) forming a set of point spread functions (PSFs), wherein the set of PSFs is suitable for null-filling operation. Next, we invert jointly the set of images and the set of PSFs to produce an output image having a reduced blur.

摘要翻译： 本发明的实施例描述了一种用于减少场景图像中的模糊的方法。 首先，我们获取场景的一组图像，其中图像集合中的每个图像包括具有与形成一组点扩散函数（PSF）的点扩散函数（PSF）相关联的模糊的对象，其中， PSF适用于零填充操作。 接下来，我们共同颠倒图像集合和PSF集合以产生具有减小的模糊的输出图像。