摘要:
A substrate bonding apparatus for use in fabricating LCD devices substantially prevents substrates held to upper stages from sagging. The substrate bonding apparatus may, for example, include upper and lower stages having a plurality of passages for holding respective substrates; suction force applying means having one end mounted within each passage for transmitting a suction force to operably proximate portions of a substrate, wherein the one end of the suction force applying means is projectable from within each passage to a predetermined distance from the stage; and a vacuum pump for providing a suction force to the suction force applying means.
摘要:
An ink-jet printing apparatus that uniformly coats an alignment layer of an LCD device is provided. The ink-jet printing apparatus includes a head where the head has a head body and a supply pipe disposed inside the head body. The supply pipe allows the passage of a material through the head. The head also includes a nozzle and a foam removing means. The nozzle is in fluid communication with a portion of the supply pipe which discharges the material. The foam removing means is disposed in the nozzle and dissipates foam in the material.
摘要:
Loader and bonding apparatus for fabricating a liquid crystal display device, and a loading method thereof are disclosed, the method for loading a substrate by using a loader having an arm with a plurality of robot fingers, and a plurality of adsorption pads on each of the robot fingers at regular intervals for adsorbing a substrate, and a bonding apparatus having a plurality of adsorption pins mounted on the upper stage movable in up/down direction for adsorption of the substrate being loaded, including the steps of the loader adsorbing, and holding the substrate at a back side thereof, and inverting the substrate, by using the adsorption pads, positioning the inverted substrate under the upper stage of the bonding apparatus, moving down the adsorption pins on the upper stage, and adsorbing the substrate at the back side thereof through the adsorption pins, removing adsorption force of the adsorption pads, and the loader being moved out of the bonding apparatus, and moving up the adsorption pins, and securing the substrate to the upper stage, whereby permitting inversion of the substrate without using an inverting device, and to prevent sagging of a large sized substrate to enable easy loading of the substrate on the bonding apparatus.
摘要:
A composition of (i) an organometallic precursor containing a hydrazine compound coordinating with a central metal thereof and (ii) an organometallic compound of a main group metal and a method of forming metal film or pattern using this composition.
摘要:
An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high Ion/Ioff, and it can be prepared by a wet process.
摘要:
The present invention provides surface modification methods of pancreatic islet membranes by polymeric grafting. Particularly, the present invention provides the surface modification methods that hydrophilic polymer chain is grafted onto collagen membranes of the pancreatic islets by various polymeric grafting methods instead of encapsulation of the pancreatic islets. Since the surface modification methods of the present invention minimize immunorejection without islet damage in islet transplantation, extend efficiency and survival time of the pancreatic islets by maintaining a high diffusion rate of oxygen and nutrient and reduce total volume of the pancreatic islets required for islet transplantation, they can be effectively used for transplantation of the pancreatic islets.
摘要:
A cosmetic case is structured such that a rotary body (3) having a brush (2) attached thereto is installed to rotate to the upper side of a tube-type case (1) for accommodating liquid cosmetic by an insertion body (4) such that the cosmetic case is manufactured by simple-structured components to enhance economic effect, an opening (12) and a discharge opening (9) are formed in the form of a single line in a body formed with the rotary body (3) such that the liquid cosmetic is smoothly discharged, lock checking parts (16 and 16a) are formed in the outer circumferential front sides of the tube-type case (1) and the insertion body (4) to easily check whether an opening (12) formed in the rotary body (3) and a liquid cosmetic discharging guide (6) formed in the upper side of the tube-type case (1) are opened or closed so that the liquid cosmetic does not leak and the cosmetic case can be maintained clean.
摘要:
The present invention relates to an apparatus and a method for realizing all-optical NOR logic device using the gain saturation characteristics of a semiconductor optical amplifier (SOA). More particularly, the invention relates to a 10 Gbit/s all-optical NOR logic device among all-optical logic devices, in which a signal transmitted from a given point of an optical circuit such as an optical computing circuit is used as a pump signal and a probe signal. The method for realizing an all-optical NOR logic device using the gain saturation characteristics of the SOA according to the present invention comprises the steps of: utilizing A+B signal which couples together an input signal pattern A (1100) and an input signal pattern B (0110) as a pump signal (1110); utilizing a probe signal (1111) by generating a clock signal out of said input signal pattern A (1100); and obtaining a Boolean equation {overscore (A+B)} by making said probe signal and said pump signal incident upon the SOA simultaneously from the opposite direction. The all-optical logic device according to the present invention has a simple construction since it is realized through the XGM (Cross Gain Modulation) method which utilizes the gain saturation characteristics. Also, it is expected that the method employed in the present invention could be used for realizing other all-optical logic circuits and devices. Key Words 10 Gbit/s, All-optical NOR logic device (10 Gbit/s All-optical NOR logic device), Semiconductor Optical Amplifiers, Gain Saturation
摘要:
Disclosed is a composition for preparing an organic insulator, the composition comprising (i) at least one organic-inorganic hybrid material; (ii) at least one organometallic compound and/or organic polymer; and (iii) at least one solvent for dissolving the above two components, so that an organic insulator using the same has a low threshold voltage and driving voltage, and high charge carrier mobility and Ion/Ioff ratio, thereby enhancing insulator characteristics. Further, the preparation of organic insulating film can be carried out by wet process, so that simplification of the process and cut of cost are achieved.
摘要翻译:公开了一种用于制备有机绝缘体的组合物,该组合物包含(i)至少一种有机 - 无机混合材料; (ii)至少一种有机金属化合物和/或有机聚合物; 和(iii)用于溶解上述两种组分的至少一种溶剂,使得使用该溶剂的有机绝缘体具有低阈值电压和驱动电压,并且高电荷载流子迁移率和I / SUB> off SUB>比,从而提高绝缘体特性。 此外,有机绝缘膜的制备可以通过湿法进行,从而实现了工艺的简化和成本的削减。
摘要:
An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01˜10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition.