公开(公告)号：US20130224521A1

公开(公告)日：2013-08-29

申请号：US13406972

申请日：2012-02-28

Applicant: Yu-Jen Wang ,  Witold Kula ,  Ru Ying Tong ,  Guenole Jan

Inventor： Yu-Jen Wang ,  Witold Kula ,  Ru Ying Tong ,  Guenole Jan

IPC: G11B5/66 ,  H01F41/22 ,  H01F41/14

CPC classification number: H01L43/12 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/66 ,  G11B5/84 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/305 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143

Abstract: Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell.

Abstract translation: 通过在合成反铁磁（SAF）结构中在间隔物的顶表面和底表面上添加除尘层，得到RL1 / DL1 /间隔物/ DL2，在磁性器件中，除了通过在400℃下的更高的热稳定性之外，增强了Hc和Hk / RL2参考层配置，其中RL1和RL2层表现出垂直的磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。 RL1和RL2层选自诸如（Ni / Co）n，L10合金或稀土 - 过渡金属合金的层压体。 参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。 可以在用于Ku增强的自由层中使用除尘层和类似的SAF设计，并增加存储器单元的保留时间。

公开(公告)号：US08416600B2

公开(公告)日：2013-04-09

申请号：US12626092

申请日：2009-11-25

Applicant: Chun-Jung Lin ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

Inventor： Chun-Jung Lin ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

IPC: G11C11/00

CPC classification number: H01L43/08 ,  G11C11/16 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/12

Abstract: Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower IMTJ capability of the memory cell caused by the source degeneration effect to the less stringent IMTJ(AP->P) while preserving the higher IMTJ capability for the more demanding IMTJ(P->AP).

Abstract translation: 本文公开了用于MRAM的反向连接STT MTJ元件的装置和方法，以在将MTJ元件的磁化从平行方向切换到反平行方向时克服源退化效应。 具有反向连接MTJ元件的MRAM的存储单元包括具有源极，栅极和漏极的开关器件和具有自由层，固定层和绝缘体层的反向连接MTJ器件， 自由层和固定层。 反连接MTJ器件的自由层连接到开关器件的漏极，固定层连接到位线（BL）。 反向连接MTJ设备将由源退化效应引起的存储器单元的较低IMTJ能力应用于较不严格的IMTJ（AP-> P），同时为更苛刻的IMTJ（P-> AP）保持较高的IMTJ能力。

公开(公告)号：US08223534B2

公开(公告)日：2012-07-17

申请号：US12687747

申请日：2010-01-14

Applicant: Shine Chung ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang ,  Hung-Sen Wang

Inventor： Shine Chung ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang ,  Hung-Sen Wang

IPC: G11C11/00

CPC classification number: G11C11/16 ,  G11C8/08 ,  G11C11/1657 ,  G11C11/1659

Abstract: A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.

Abstract translation: 操作磁阻随机存取存储器（MRAM）单元的方法包括提供包括磁隧道结（MTJ）装置的MRAM单元; 以及选择器，包括串联耦合到MTJ器件的源极 - 漏极路径。 该方法还包括将过驱动电压施加到选择器的门以接通选择器。

公开(公告)号：US08080471B2

公开(公告)日：2011-12-20

申请号：US12754451

申请日：2010-04-05

Applicant: Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

Inventor： Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

IPC: H01L21/4763

CPC classification number: H01L43/12 ,  B82Y10/00 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08

Abstract: Disclosed herein is an improved memory device, and related methods of manufacturing, wherein the area occupied by a conventional landing pad is significantly reduced to around 50% to 10% of the area occupied by conventional landing pads. This is accomplished by removing the landing pad from the cell structure, and instead forming a conductive via structure that provides the electrical connection from the memory stack or device in the structure to an under-metal layer. By forming only this via structure, rather than separate vias formed on either side of a landing pad, the overall width occupied by the connective via structure from the memory stack to an under-metal layer is substantially reduced, and thus the via structure and under-metal layer may be formed closer to the memory stack (or conductors associated with the stack) so as to reduce the overall width of the cell structure.

Abstract translation: 这里公开了一种改进的存储器件和相关的制造方法，其中传统的着陆焊盘占据的面积显着地减少到传统的着陆焊盘占据的面积的大约50％到10％。 这是通过从电池结构中去除着陆焊盘而实现的，而是形成导电通孔结构，其提供从结构中的存储器堆或器件到下金属层的电连接。 通过仅形成该通孔结构，而不是形成在着陆焊盘的任一侧上的分离的通孔，结构通孔结构从存储器堆叠到下金属层占据的总宽度大大减小，因此通孔结构和下面 金属层可以形成为更靠近存储器堆叠（或与堆叠相关联的导体），以便减小电池结构的整体宽度。

公开(公告)号：US20110164226A1

公开(公告)日：2011-07-07

申请号：US12885701

申请日：2010-09-20

Applicant: Tai-Feng Wu ,  Ching-Chang Chen ,  Yu-Jen Wang ,  Ming-Chieh Chou

Inventor： Tai-Feng Wu ,  Ching-Chang Chen ,  Yu-Jen Wang ,  Ming-Chieh Chou

IPC: G06K9/36 ,  G03B21/14

CPC classification number: H04N9/3185 ,  G06K2009/363 ,  H04N9/3173

Abstract: A method for projection correction includes following steps. An original image is projected as a projection image on an object. A projection-zone image including the projection image is captured from the object. A projection image outline corresponding to the projection image is obtained from the projection-zone image. An operation is performed on the projection image outline to obtain a horizontal inclination and a vertical inclination. The original image is pre-warped according to the horizontal inclination and the vertical inclination to obtain a corrected image, and the corrected image is projected on the object.

Abstract translation: 投影校正的方法包括以下步骤。 将原始图像投影为物体上的投影图像。 从对象捕获包括投影图像的投影区域图像。 从投影区域图像获得与投影图像对应的投影图像轮廓。 对投影图像轮廓进行操作以获得水平倾斜度和垂直倾斜度。 原始图像根据水平倾斜度和垂直倾斜度预弯曲以获得校正图像，并且将校正后的图像投影在物体上。

公开(公告)号：US20110074563A1

公开(公告)日：2011-03-31

申请号：US12631502

申请日：2009-12-04

Applicant: Pin Chang ,  Yu-Jen Wang ,  Chien Li ,  Chung-De Chen ,  Pei-Fen Wu

Inventor： Pin Chang ,  Yu-Jen Wang ,  Chien Li ,  Chung-De Chen ,  Pei-Fen Wu

IPC: B62J6/00 ,  B62J6/06 ,  F03G7/08 ,  G01P3/16

CPC classification number: G01P3/16 ,  B62J6/003 ,  B62J6/06 ,  B62J6/20 ,  F03G7/08

Abstract: The present disclosure provides a swinging device having a swinging mechanism disposed on an energy provider, wherein volume and shape of the swinging mechanism and a distance between the swinging mechanism and the energy provider are adjusted so as to control the ratio of the distance and a characteristic value corresponding to the swinging mechanism in a specific range such that the swinging mechanism is capable of resonating with respect to the rotation of the energy provider. The swinging mechanism is capable of detecting the rotating frequency of the energy provider as well as combining with a display unit which is capable of displaying information with respect to the rotating status or displaying image patterns controlled according to the rotating status.

Abstract translation: 本公开提供了一种具有设置在能量提供者上的摆动机构的摆动装置，其中调节摆动机构的体积和形状以及摆动机构和能量提供者之间的距离，以便控制距离和特性的比率 相应于摆动机构的特定范围的值，使得摆动机构能够相对于能量提供者的旋转而谐振。 摆动机构能够检测能量提供者的旋转频率，以及与能够显示关于旋转状态的信息的显示单元或显示根据旋转状态控制的图像模式的组合。

公开(公告)号：US07851324B2

公开(公告)日：2010-12-14

申请号：US11586528

申请日：2006-10-26

Applicant: Yu-Jen Wang ,  Chia-Shiung Tsai ,  Yeur-Luen Tu ,  Lan-Lin Chao ,  Chih-Ta Wu ,  Hsing-Lien Lin ,  Chung Chien Wang

Inventor： Yu-Jen Wang ,  Chia-Shiung Tsai ,  Yeur-Luen Tu ,  Lan-Lin Chao ,  Chih-Ta Wu ,  Hsing-Lien Lin ,  Chung Chien Wang

IPC: H01L29/94

CPC classification number: H01L28/60 ,  H01L21/321

Abstract: A method of manufacturing a semiconductor device includes forming a metal-insulator-metal (MIM) device having a metal organic chemical vapor deposited (MOCVD) lower electrode and an atomic layer deposited (ALD) upper electrode.

Abstract translation: 一种制造半导体器件的方法包括形成具有金属有机化学气相沉积（MOCVD）下电极和原子层沉积（ALD）上电极的金属 - 绝缘体 - 金属（MIM）器件。

公开(公告)号：US20100214825A1

公开(公告)日：2010-08-26

申请号：US12617982

申请日：2009-11-13

Applicant: Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

Inventor： Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

IPC: G11C11/00 ,  G11C7/00

CPC classification number: G11C11/1677 ,  G11C11/1675

Abstract: A method of writing a magneto-resistive random access memory (MRAM) cell includes providing a writing pulse to write a value to the MRAM cell; and verifying a status of the MRAM cell immediately after the step of providing the first writing pulse. In the event of a write failure, the value is rewritten into the MRAM cell.

Abstract translation: 写入磁阻随机存取存储器（MRAM）单元的方法包括提供写入脉冲以将值写入MRAM单元; 以及在提供第一写入脉冲的步骤之后立即验证MRAM单元的状态。 在写入失败的情况下，该值被重写到MRAM单元中。

公开(公告)号：US20090209050A1

公开(公告)日：2009-08-20

申请号：US12032973

申请日：2008-02-18

Applicant: Yung-Hung Wang ,  Yu-Jen Wang ,  Mark Juang ,  Chia-Shiung Tsai

Inventor： Yung-Hung Wang ,  Yu-Jen Wang ,  Mark Juang ,  Chia-Shiung Tsai

IPC: H01L21/00

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  H01L43/08 ,  H01L43/12

Abstract: A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers.

Abstract translation: 形成集成电路的方法包括形成磁隧道结（MTJ）层; 蚀刻MTJ层以形成MTJ电池; 以及在MTJ电池的侧壁上形成电介质覆盖层，其中形成电介质覆盖层的步骤是用蚀刻MTJ层的步骤进行的。

公开(公告)号：US07573736B2

公开(公告)日：2009-08-11

申请号：US11752157

申请日：2007-05-22

Applicant: Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

Inventor： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

IPC: G11C11/00

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675

Abstract: The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area.

Abstract translation: 本公开提供了一种磁存储元件。 存储元件包括磁隧道结（MTJ）元件和电极。 电极包括钉扎层，钉扎层和非磁性导电层。 在一个实施例中，MTJ元件包括具有第一表面区域的第一表面，并且电极包括第二表面。 在该实施例中，电极的第二表面耦合到MTJ元件的第一表面，使得形成界面区域，并且界面面积小于第一表面积。