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公开(公告)号：US07816215B2
公开(公告)日：2010-10-19
申请号：US10941814
申请日：2004-09-16
申请人： Daisuke Matsushita , Koichi Muraoka , Seiji Inumiya , Koichi Kato , Kazuhiro Eguchi , Mariko Takayanagi , Yasushi Nakasaki
发明人： Daisuke Matsushita , Koichi Muraoka , Seiji Inumiya , Koichi Kato , Kazuhiro Eguchi , Mariko Takayanagi , Yasushi Nakasaki
IPC分类号： H01L21/336
CPC分类号： H01L21/28202 , H01L21/022 , H01L21/02329 , H01L21/0234 , H01L21/3144 , H01L29/513 , H01L29/518
摘要： A semiconductor device manufacturing method comprises: forming a gate insulative film on a semiconductor substrate by: forming a first nitride film on the substrate; forming a first oxide film and a second oxide film, the first oxide film being between the substrate and the first nitride film, the second oxide film being on the first nitride film; and nitriding the second oxide film to form, on the first nitride film, one of either: a second nitride film or an SiON film; and forming a gate electrode on the gate insulative film; wherein the equivalent oxide thickness of the gate insulative film is equal to or less than 1 nm.
摘要翻译： 一种半导体器件制造方法，包括：在半导体衬底上形成栅极绝缘膜，方法是在衬底上形成第一氮化物膜; 形成第一氧化物膜和第二氧化物膜，所述第一氧化膜位于所述衬底和所述第一氮化物膜之间，所述第二氧化物膜位于所述第一氮化物膜上; 并且对所述第二氧化物膜进行氮化以在所述第一氮化物膜上形成以下之一：第二氮化物膜或SiON膜; 并在所述栅极绝缘膜上形成栅电极; 其中所述栅绝缘膜的等效氧化物厚度等于或小于1nm。
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公开(公告)号：US20070222003A1
公开(公告)日：2007-09-27
申请号：US11802684
申请日：2007-05-24
IPC分类号： H01L29/76
CPC分类号： H01L21/02112 , H01L21/02274 , H01L21/28202 , H01L21/3143 , H01L21/318 , H01L29/513 , H01L29/518 , H01L29/78
摘要： According to an aspect of the present invention, there is disclosed a semiconductor device comprising a semiconductor substrate, and a gate insulating film of a P-channel MOS transistor, formed on the semiconductor substrate. The gate insulating film has an oxide film (SiO2), and a diffusion preventive film (BN) containing boron and nitrogen atoms.
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公开(公告)号：US20060175672A1
公开(公告)日：2006-08-10
申请号：US11197593
申请日：2005-08-05
IPC分类号： H01L29/94 , H01L21/8238
CPC分类号： H01L21/02112 , H01L21/02274 , H01L21/28202 , H01L21/3143 , H01L21/318 , H01L29/513 , H01L29/518 , H01L29/78
摘要： According to an aspect of the present invention, there is disclosed a semiconductor device comprising a semiconductor substrate, and a gate insulating film of a P-channel MOS transistor, formed on the semiconductor substrate. The gate insulating film has an oxide film (SiO2), and a diffusion preventive film (BN) containing boron and nitrogen atoms.
摘要翻译： 根据本发明的一个方面，公开了一种半导体器件，包括半导体衬底和形成在半导体衬底上的P沟道MOS晶体管的栅极绝缘膜。 栅极绝缘膜具有氧化膜（SiO 2）和含有硼和氮原子的防扩散膜（BN）。
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公开(公告)号：US08569823B2
公开(公告)日：2013-10-29
申请号：US13235970
申请日：2011-09-19
申请人： Tsunehiro Ino , Masao Shingu , Shosuke Fujii , Akira Takashima , Daisuke Matsushita , Jun Fujiki , Naoki Yasuda , Yasushi Nakasaki , Koichi Muraoka
发明人： Tsunehiro Ino , Masao Shingu , Shosuke Fujii , Akira Takashima , Daisuke Matsushita , Jun Fujiki , Naoki Yasuda , Yasushi Nakasaki , Koichi Muraoka
IPC分类号： H01L29/788
CPC分类号： H01L29/513 , H01L21/28282 , H01L27/11568 , H01L29/517 , H01L29/66833 , H01L29/792
摘要： According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating film, and a control gate electrode provided on the block insulating film.
摘要翻译： 根据一个实施例，半导体器件包括半导体区域，设置在半导体区域上的隧道绝缘膜，设置在隧道绝缘膜上并具有包含立方体区域的氧化铪的电荷存储绝缘膜，设置在 电荷存储绝缘膜和设置在块绝缘膜上的控制栅电极。
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公开(公告)号：US20120068250A1
公开(公告)日：2012-03-22
申请号：US13235970
申请日：2011-09-19
申请人： Tsunehiro Ino , Masao Shingu , Shosuke Fujii , Akira Takashima , Daisuke Matsushita , Jun Fujiki , Naoki Yasuda , Yasushi Nakasaki , Koichi Muraoka
发明人： Tsunehiro Ino , Masao Shingu , Shosuke Fujii , Akira Takashima , Daisuke Matsushita , Jun Fujiki , Naoki Yasuda , Yasushi Nakasaki , Koichi Muraoka
IPC分类号： H01L29/788 , H01L21/28
CPC分类号： H01L29/513 , H01L21/28282 , H01L27/11568 , H01L29/517 , H01L29/66833 , H01L29/792
摘要： According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating film, and a control gate electrode provided on the block insulating film.
摘要翻译： 根据一个实施例，半导体器件包括半导体区域，设置在半导体区域上的隧道绝缘膜，设置在隧道绝缘膜上并具有包含立方体区域的氧化铪的电荷存储绝缘膜，设置在 电荷存储绝缘膜和设置在块绝缘膜上的控制栅电极。
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公开(公告)号：US07238997B2
公开(公告)日：2007-07-03
申请号：US11197593
申请日：2005-08-05
IPC分类号： H01L29/94
CPC分类号： H01L21/02112 , H01L21/02274 , H01L21/28202 , H01L21/3143 , H01L21/318 , H01L29/513 , H01L29/518 , H01L29/78
摘要： According to an aspect of the present invention, there is disclosed a semiconductor device comprising a semiconductor substrate, and a gate insulating film of a P-channel MOS transistor, formed on the semiconductor substrate. The gate insulating film has an oxide film (SiO2), and a diffusion preventive film (BN) containing boron and nitrogen atoms.
摘要翻译： 根据本发明的一个方面，公开了一种半导体器件，包括半导体衬底和形成在半导体衬底上的P沟道MOS晶体管的栅极绝缘膜。 栅极绝缘膜具有氧化膜（SiO 2）和含有硼和氮原子的防扩散膜（BN）。
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公开(公告)号：US08390054B2
公开(公告)日：2013-03-05
申请号：US12880748
申请日：2010-09-13
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L21/28282 , B82Y10/00 , B82Y30/00 , H01L27/11578 , H01L27/11582 , H01L29/42348 , H01L29/7923 , H01L29/7926
摘要： According to one embodiment, a semiconductor memory element includes a semiconductor layer, a tunnel insulator provided on the semiconductor layer, a charge accumulation film provided on the tunnel insulator having a film thickness of 0.9 nm or more and 2.8 nm or less and the charge accumulation film containing cubic HfO2 particles, a block insulator provided on the charge accumulation film, and a control electrode provided on the block insulator.
摘要翻译： 根据一个实施例，半导体存储元件包括半导体层，设置在半导体层上的隧道绝缘体，设置在隧道绝缘体上的电荷累积膜，其膜厚度为0.9nm以上且2.8nm以下，电荷积累 含有立方HfO 2颗粒的膜，设置在电荷累积膜上的块绝缘体，以及设置在块绝缘体上的控制电极。
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公开(公告)号：US20080173930A1
公开(公告)日：2008-07-24
申请号：US11902132
申请日：2007-09-19
IPC分类号： H01L29/788 , H01L21/285 , H01L29/792
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/40114 , H01L29/40117 , H01L29/42324 , H01L29/513 , H01L29/792
摘要： The present invention provides a semiconductor memory device having a tunnel insulating film that does not degrade the endurance characteristics when writing/erasing is repeated, even if the tunnel insulating film is made thinner. The semiconductor memory device includes: a semiconductor substrate; a first insulating film formed on the semiconductor substrate, and including a silicon oxynitride film and a silicon-rich silicon oxide film formed on the silicon oxynitride film, the silicon oxynitride film having a stacked structure formed with a first silicon oxynitride layer, a silicon nitride layer, and a second silicon oxynitride layer in order; a charge storage layer formed on the first insulating film; a second insulating film formed on the charge storage layer; and a control gate formed on the second insulating film.
摘要翻译： 本发明提供了一种半导体存储器件，其具有隧道绝缘膜，即使在隧道绝缘膜变薄的情况下，也不会降低写入/擦除时的耐久特性。 半导体存储器件包括：半导体衬底; 形成在所述半导体衬底上的第一绝缘膜，并且包括氮氧化硅膜和形成在所述氧氮化硅膜上的富硅氧化物膜，所述氧氮化硅膜具有由第一氮氧化硅层形成的堆叠结构，氮化硅 层和第二氮氧化硅层; 形成在所述第一绝缘膜上的电荷存储层; 形成在电荷存储层上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅极。
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公开(公告)号：US20050064667A1
公开(公告)日：2005-03-24
申请号：US10941814
申请日：2004-09-16
申请人： Daisuke Matsushita , Koichi Muraoka , Seiji Inumiya , Koichi Kato , Kazuhiro Eguchi , Mariko Takayanagi , Yasushi Nakasaki
发明人： Daisuke Matsushita , Koichi Muraoka , Seiji Inumiya , Koichi Kato , Kazuhiro Eguchi , Mariko Takayanagi , Yasushi Nakasaki
IPC分类号： H01L21/318 , H01L21/00 , H01L21/28 , H01L21/314 , H01L21/3205 , H01L21/336 , H01L21/4763 , H01L21/84 , H01L29/51 , H01L29/78
CPC分类号： H01L21/28202 , H01L21/022 , H01L21/02329 , H01L21/0234 , H01L21/3144 , H01L29/513 , H01L29/518
摘要： A semiconductor device manufacturing method comprises: forming a first nitride film on a semiconductor substrate; forming a first oxide film between said semiconductor substrate and said nitride film and forming a second oxide film on said nitride film; forming a second nitride film or an oxide and nitride film on said first nitride film by nitriding said second oxide film; and forming a gate electrode on a gate insulative film including said first oxide film, said first nitride film, and said second nitride film or said oxide and nitride film.
摘要翻译： 半导体器件制造方法包括：在半导体衬底上形成第一氮化物膜; 在所述半导体衬底和所述氮化物膜之间形成第一氧化物膜，并在所述氮化膜上形成第二氧化膜; 通过氮化所述第二氧化物膜在所述第一氮化物膜上形成第二氮化物膜或氧化物和氮化物膜; 以及在包括所述第一氧化物膜，所述第一氮化物膜和所述第二氮化物膜或所述氧化物和氮化物膜的栅极绝缘膜上形成栅电极。
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公开(公告)号：US08916848B2
公开(公告)日：2014-12-23
申请号：US13598305
申请日：2012-08-29
CPC分类号： H01L45/08 , G11C13/0007 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/145
摘要： According to one embodiment, a resistance change device includes a first electrode including a metal, a second electrode, and an amorphous oxide layer including Si and O between the first and second electrode, the layer having a concentration gradient of O and a first peak thereof in a direction from the first electrode to the second electrode.
摘要翻译： 根据一个实施例，电阻改变装置包括在第一和第二电极之间包括金属，第二电极和包括Si和O的无定形氧化物层的第一电极，具有浓度梯度为O的层和其第一峰值 在从第一电极到第二电极的方向上。
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