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公开(公告)号：US5835778A
公开(公告)日：1998-11-10
申请号：US624056
申请日：1996-03-29
申请人： Shinji Yoshihara
发明人： Shinji Yoshihara
CPC分类号： G06F11/1402 , G06F8/66 , G06F9/445
摘要： When a preinitialized load module 2 is modified, modifying command analysis means 401 registers modifying commands in a modifying command table 302, preinitialized load module loading means 402 loads a program portion 201 in a main memory 3, modifying command processing means 403 modifies a program image 301 according to the modifying command, preinitialized load module unloading means 404 reflects the image after modification to the program portion 201 and modifying command table unloading means 405 reflects the content of the modifying command table 302 to a modification history record portion 202. When the image in the modified portion is restored to the image before modification, modification restoring command analysis means 407 registers a modification restoring command in the modification restoring command table 303, modification history acquiring means 408 acquires the modifying command corresponding to the modification restoring command from the modification history record portion 202 and modification restoring means 409 restores the image before modification from the image in the portion indicated by the modifying command.
摘要翻译： 当修改预初始化的加载模块2时，修改命令分析装置401在修改命令表302中注册修改命令，预初始加载模块加载装置402将主存储器3中的程序部分201加载，修改命令处理装置403修改程序图像 301，根据修改命令，预初始化加载模块卸载装置404将修改后的图像反映到程序部分201，并且修改命令表卸载装置405将修改命令表302的内容反映到修改历史记录部分202.当图像 修改部分恢复到修改前的图像，修改恢复命令分析装置407在修改恢复命令表303中注册修改恢复命令，修改历史获取装置408从修改历史中获取与修改恢复命令相对应的修改命令 记录端口 离子202和修改恢复装置409在由修改命令指示的部分中的图像中恢复修改之前的图像。
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12.发明申请公开(公告)号：US20090242087A1
公开(公告)日：2009-10-01
申请号：US12396710
申请日：2009-03-03
摘要： An extruded member of Al—Mg—Si aluminum alloy specially composed of Mg, Si, Fe, Cu, Zn, Ti, etc. which has the equiaxed re-crystallized grain structure in which intergranular precipitates 1 μm or lager are separate from one another at large average intervals and there are many cube orientations over the entire thickness region thereof so that it excels in both flexural crushing performance and corrosion resistance. The extruded member is suitable for use as automotive body reinforcement members which need outstanding lateral crushing performance under severe collision conditions as well as good corrosion resistance.
摘要翻译： 特别由Mg，Si，Fe，Cu，Zn，Ti等组成的Al-Mg-Si铝合金的挤压构件，其具有1μm或更大的晶间析出物的等轴再结晶晶粒结构彼此分离 平均间隔较大，并且在其整个厚度区域上具有许多立方体取向，因此其在弯曲破碎性能和耐腐蚀性方面均优异。 挤出部件适用于在严酷的碰撞条件下需要优异的侧向破碎性能以及良好的耐腐蚀性的汽车车身增强件。
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13.发明授权公开(公告)号：US07174072B2
公开(公告)日：2007-02-06
申请号：US11139540
申请日：2005-05-31
CPC分类号： G02B6/136 , G02B6/122 , G02B6/4207
摘要： An optical device includes: a silicon substrate; a plurality of silicon oxide columns having a rectangular plan shape; and a cavity disposed between the columns. Each column has a lower portion disposed on the substrate. Each column has a width defined as W1. The cavity has a width defined as W2. A ratio of W1/W2 becomes smaller as it goes to the lower portion of the column. A core layer provided by the columns and the cavity can have the thickness equal to or larger than a few dozen μm easily. Therefore, connection loss between a light source and the device is reduced.
摘要翻译： 光学器件包括：硅衬底; 多个具有矩形平面形状的氧化硅柱; 以及设置在列之间的空腔。 每列具有设置在基板上的下部。 每列具有定义为W 1的宽度。空腔的宽度定义为W 2.W 1 / W 2的比率随着进入塔的下部而变小。 由柱和空腔提供的芯层可以容易地具有等于或大于几十个的厚度。 因此，光源与设备之间的连接损耗减小。
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公开(公告)号：US06960487B2
公开(公告)日：2005-11-01
申请号：US10404073
申请日：2003-04-02
CPC分类号： G01L9/0055 , H01L24/83 , H01L2224/8384 , H01L2224/8389 , H01L2924/0133 , H01L2924/1305 , H01L2924/01026 , H01L2924/01027 , H01L2924/01028 , H01L2924/00
摘要： A method for manufacturing a dynamic quantity detection device includes bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer. Initially, a semiconductor chip is formed that includes a detection element used for correlating a dynamic quantity to be detected to an electric quantity and a processing circuit element used for a circuit that processes the electric quantity. Further, a bonding layer is placed on a stand. The semiconductor chip is then placed on the bonding layer and the semiconductor chip is bonded to the stand by sintering the bonding layer at 400° C. or lower in order to suppress a change in a characteristic of the processing circuit element.
摘要翻译： 一种用于制造动态量检测装置的方法包括使用接合层将包括用于检测动态量的检测元件的半导体芯片接合到支架。 首先，形成半导体芯片，其包括用于将要检测的动态量与电量相关联的检测元件和用于处理电量的电路所使用的处理电路元件。 此外，将接合层放置在支架上。 然后将半导体芯片放置在接合层上，并且通过在400℃或更低温度下烧结粘合层将半导体芯片接合到支架上，以便抑制处理电路元件的特性变化。
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公开(公告)号：US06429506B1
公开(公告)日：2002-08-06
申请号：US09525514
申请日：2000-03-15
申请人： Tetsuo Fujii , Tsuyoshi Fukada , Hiroshi Muto , Kenichi Ao , Shinji Yoshihara , Sumitomo Inomata
发明人： Tetsuo Fujii , Tsuyoshi Fukada , Hiroshi Muto , Kenichi Ao , Shinji Yoshihara , Sumitomo Inomata
IPC分类号： H01L21301
CPC分类号： H01L21/6836 , B29C33/0022 , B29C2043/023 , B81C1/00888 , B81C1/00896 , B81C2201/053 , H01L2221/68327 , H01L2224/16 , H01L2224/45124 , H01L2224/45144 , H01L2224/48095 , H01L2224/48465 , H01L2224/73265 , H01L2924/01057 , H01L2924/01068 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/10253 , H01L2924/16235 , H01L2924/30105 , H01L2924/00 , H01L2924/00014
摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.
摘要翻译： 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。
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16.发明授权Virtual system time management system utilizing a time storage area and time converting mechanism 有权虚拟系统时间管理系统利用时间存储区域和时间转换机制公开(公告)号：US06421786B1
公开(公告)日：2002-07-16
申请号：US09266781
申请日：1999-03-12
申请人： Shinji Yoshihara
发明人： Shinji Yoshihara
IPC分类号： G06F108
CPC分类号： G06F1/14
摘要： To allow an AP which performs operation based on a time of a system clock and another AP which performs operation based on a user-specified time to be executed concurrently in a data processing unit with only one system clock without having to change the time of the system clock, virtual system time setting means 5 receive a command or job start date and/or time from an input/output unit 2 and store it in a virtual system time storage area 4. In response to a system date acquisition function 6 or a system time acquisition function 7 from a command or a job, virtual system time converting means return either the date of the system clock when the date is not stored in the virtual system time storage area 4 or the date stored in the date storage area when the date is stored therein. The means also return either the time of the system clock when the time is not stored in the virtual system time storage area or the time of said system clock plus the time stored in said time storage area when the time is stored therein.
摘要翻译： 为了允许基于系统时钟的时间执行操作的AP和基于用户指定时间执行操作的另一个AP在仅具有一个系统时钟的数据处理单元中同时执行，而不必改变 系统时钟，虚拟系统时间设置装置5从输入/输出单元2接收命令或作业开始日期和/或时间，并将其存储在虚拟系统时间存储区域4.响应于系统日期获取功能6或 系统时间获取功能7，虚拟系统时间转换装置在日期不存储在虚拟系统时间存储区域4中时返回系统时钟的日期，或者当存储在日期存储区域中的日期时，返回系统时钟的日期 日期存储在其中。 当时间不存储在虚拟系统时间存储区域中时，系统时钟的时间还是系统时钟的时间加上存储在所述时间存储区域中的时间加上存储在所述时间存储区域中的时间。
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公开(公告)号：US06287885B1
公开(公告)日：2001-09-11
申请号：US09306381
申请日：1999-05-06
申请人： Hiroshi Muto , Tsuyoshi Fukada , Masakazu Terada , Hiroshige Sugito , Masakazu Kanosue , Shinji Yoshihara , Shoji Ozoe , Seiji Fujino , Minekazu Sakai , Minoru Murata , Yukihiro Takeuchi , Seiki Aoyama , Toshio Yamamoto , Kazushi Asami
发明人： Hiroshi Muto , Tsuyoshi Fukada , Masakazu Terada , Hiroshige Sugito , Masakazu Kanosue , Shinji Yoshihara , Shoji Ozoe , Seiji Fujino , Minekazu Sakai , Minoru Murata , Yukihiro Takeuchi , Seiki Aoyama , Toshio Yamamoto , Kazushi Asami
IPC分类号： H01L21302
CPC分类号： B81C1/00936 , B81B3/0005 , B81B2201/0235 , B81B2201/025 , B81B2203/0136 , B81B2203/033 , B81B2203/04 , B81C2201/0132 , B81C2201/053 , B81C2201/112 , G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/084
摘要： In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.
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18.发明授权
公开(公告)号：US6059902A
公开(公告)日：2000-05-09
申请号：US880689
申请日：1997-06-23
申请人： Shinji Yoshihara , Masakazu Hirano
发明人： Shinji Yoshihara , Masakazu Hirano
摘要： An aluminum alloy containing Si: 1.5-12% (mass % here and hereinafter), Mg: 0.5-6% and, optionally, at least one of Mn: 0.5-2%, Cu: 0.15-3% and Cr: 0.04-0.35% and, further, containing Ti: 0.01-0.1% and the balance of Al and inevitable impurities, in which the average grain size of crystallized grains of Si system compounds is from 2 to 20 .mu.m and an area ratio thereof is from 2 to 12%. The alloy is melted to obtain a cast ingot having DAS (Dendrite Arm Spacing) of 10 to 50 .mu.m, which is then put to a soaking treatment at 450 to 520.degree. C. and then to extrusion molding. The aluminum alloy has excellent machinability with no addition of low melting metals.
摘要翻译： 含有Si：1.5〜12％（质量％以下），Mg：0.5〜6％，以及Mn：0.5〜2％，Cu：0.15〜3％，Cr：0.04〜 0.35％，进一步含有Ti：0.01-0.1％，余量为Al和不可避免的杂质，其中Si系化合物的结晶晶粒的平均粒径为2〜20μm，面积比为2 至12％。 将合金熔化，得到10〜50μm的DAS（枝晶臂间距）的铸锭，然后在450〜520℃下进行均热处理，然后进行挤出成型。 铝合金具有优异的机械加工性，不添加低熔点金属。
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19.发明申请公开(公告)号：US20050265662A1
公开(公告)日：2005-12-01
申请号：US11139540
申请日：2005-05-31
CPC分类号： G02B6/136 , G02B6/122 , G02B6/4207
摘要： An optical device includes: a silicon substrate; a plurality of silicon oxide columns having a rectangular plan shape; and a cavity disposed between the columns. Each column has a lower portion disposed on the substrate. Each column has a width defined as W1. The cavity has a width defined as W2. A ratio of W1/W2 becomes smaller as it goes to the lower portion of the column. A core layer provided by the columns and the cavity can have the thickness equal to or larger than a few dozen μm easily. Therefore, connection loss between a light source and the device is reduced.
摘要翻译： 光学器件包括：硅衬底; 多个具有矩形平面形状的氧化硅柱; 以及设置在列之间的空腔。 每列具有设置在基板上的下部。 每列具有定义为W 1的宽度。空腔的宽度定义为W 2.W 1 / W 2的比率随着进入塔的下部而变小。 由柱和空腔提供的芯层可以容易地具有等于或大于几十个的厚度。 因此，光源与设备之间的连接损耗减小。
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公开(公告)号：US06787929B2
公开(公告)日：2004-09-07
申请号：US09785464
申请日：2001-02-20
申请人： Shinji Yoshihara , Yasuo Souki , Kinya Atsumi , Hiroshi Muto
发明人： Shinji Yoshihara , Yasuo Souki , Kinya Atsumi , Hiroshi Muto
IPC分类号： H01L2329
CPC分类号： B81C1/00888 , B81C1/00896 , C09J7/385 , C09J2203/326 , C09J2423/006 , C09J2433/00 , H01L21/6836 , H01L2221/68327
摘要： A semiconductor device has a semiconductor wafer having sensing portions exposed on a surface thereof and an adhesive sheet attached to the semiconductor wafer as a protective cap to cover the sensing portions. The adhesive sheet is composed of a flat adhesive sheet and adhesive disposed generally on an entire surface of the adhesive sheet. Adhesion of the adhesive is selectively reduced by UV irradiation to have adhesion reduced regions, and the adhesion reduced regions face the sensing portions. The protective cap can be produced with high productivity, and securely protect the sensing portions when the semiconductor wafer is diced and is transported.
摘要翻译： 半导体器件具有其表面上具有感测部分的半导体晶片和附接到半导体晶片的粘合片作为保护盖以覆盖感测部分。 粘合片由通常在粘合片的整个表面上设置的平坦粘合片和粘合剂构成。 通过UV照射选择性地降低粘合剂的粘附性以具有粘合减少区域，并且粘合降低区域面对感测部分。 可以以高生产率制造保护盖，并且在半导体晶片被切割并被输送时可靠地保护感测部分。
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