公开(公告)号：US20100068413A1

公开(公告)日：2010-03-18

申请号：US12560690

申请日：2009-09-16

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: B01J19/08 ,  C23C16/54

CPC classification number: C23C16/50 ,  C23C16/45514 ,  C23C16/45595 ,  C23C16/54

Abstract: A vapor deposition reactor may include a first electrode including a first channel and at least one first injection hole connected to the first channel. a second electrode electrically separated from the first electrode, and a power source for applying power between the first electrode and the second electrode to generate plasma from a reactant gas between the first electrode and the second electrode. Also provided is a method for forming thin film using the vapor deposition reactor.

Abstract translation: 气相沉积反应器可以包括包括第一通道的第一电极和连接到第一通道的至少一个第一注入孔。 与第一电极电分离的第二电极和用于在第一电极和第二电极之间施加电力以从第一电极和第二电极之间的反应气体产生等离子体的电源。 还提供了使用蒸镀反应器形成薄膜的方法。

公开(公告)号：US20100041213A1

公开(公告)日：2010-02-18

申请号：US12539477

申请日：2009-08-11

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L21/20 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01L21/02521 ,  C23C16/45551 ,  H01L21/4814

Abstract: A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.

Abstract translation: 气相沉积反应器包括填充有第一材料的腔室和腔室中的至少一个反应模块。 反应模块可以被配置为使得基板通过反应模块通过基板和反应模块之间的相对运动。 反应模块可以包括用于将第二材料注入基底的注射单元。 一种用于形成薄膜的方法包括将基板定位在室中，填充室中的第一材料，相对于室中的反应模块移动基板，以及在基板通过反应模块时将第二材料注入到基板。

公开(公告)号：US20130337172A1

公开(公告)日：2013-12-19

申请号：US13904825

申请日：2013-05-29

Applicant: Synos Technology, Inc.

Inventor： Sang In Lee

IPC: C23C16/455

CPC classification number: C23C16/455 ,  C23C16/45551

Abstract: Embodiments relate to a structure of reactors in a deposition device that enables efficient removal of excess material deposited on a substrate by using multiple-staged Venturi effect. In a reactor, constriction zones of different height are formed between injection chambers and an exhaust portion. As purge gas or precursor travels from injection chambers to the exhaust portion and passes the constriction zones, the pressure of the gas drops and the speed of the gas increase. Such changes in the pressure and speed facilitate removal of excess material deposited on the substrate.

Abstract translation: 实施例涉及沉积装置中的反应器的结构，其能够通过使用多级文丘里效应有效地去除沉积在基底上的多余材料。 在反应器中，在注射室和排气部分之间形成不同高度的收缩区域。 当吹扫气体或前体从注射室行进到排气部分并且通过收缩区域时，气体的压力下降并且气体的速度增加。 压力和速度的这种变化有助于去除沉积在基底上的多余材料。

公开(公告)号：US08263502B2

公开(公告)日：2012-09-11

申请号：US12539289

申请日：2009-08-11

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76224 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/3141 ,  H01L21/31604

Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

Abstract translation: 通过在具有凹部的基板上形成第一材料层来制造基板结构，使用与第一材料反应的第二材料从基板的除了凹部的部分除去第一材料层，并从 所述第一材料层使用与所述第一材料反应的第三材料。 制造器件的方法可以包括形成衬底结构的方法。

公开(公告)号：US20120098146A1

公开(公告)日：2012-04-26

申请号：US13276221

申请日：2011-10-18

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L29/02 ,  C23C16/04 ,  H01L21/56

CPC classification number: H01L23/3192 ,  C23C16/042 ,  C23C16/45551 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The configuration of one or more barrier layers for encapsulating a device is controlled by setting parameters of atomic layer deposition (ALD). A substrate formed with the device is placed on a susceptor and exposed to multiple cycles of source precursor gas and reactant precursor gas injected by reactors of a deposition device. By adjusting one or more of (i) the relative speed between the susceptor and the reactors, (ii) configuration of the reactors, and (iii) flow rates of the gases injected by the reactors, the configuration of the layers deposited on the device can be controlled. By controlling the configuration of the deposited layers, defects in the deposited layers can be prevented or reduced.

Abstract translation: 通过设置原子层沉积（ALD）的参数来控制用于封装器件的一个或多个阻挡层的构造。 用该装置形成的衬底放置在基座上并暴露于通过沉积装置的反应器注入的源前体气体和反应物前体气体的多个循环。 通过调整（i）基座和反应器之间的相对速度，（ii）反应器的构造和（iii）由反应器注入的气体的流速，沉积在装置上的层的配置的一个或多个 可以控制。 通过控制沉积层的结构，可以防止或减少沉积层中的缺陷。

公开(公告)号：US20110262650A1

公开(公告)日：2011-10-27

申请号：US13094637

申请日：2011-04-26

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/44 ,  B05C11/00 ,  H05B3/03 ,  B05D1/00 ,  B05D1/32 ,  B05C5/00 ,  B05B1/00

CPC classification number: C23C16/4486 ,  B05B5/001 ,  B05B5/043 ,  C23C16/45551

Abstract: A vaporizing apparatus includes a chamber, a nozzle for dispersing a liquid into droplets, an electrode electrically isolated from the nozzle, and a heater for generating a vapor by applying heat to the droplets. The voltage source applies charges to the droplets by applying a voltage between the nozzle and the electrode. The vaporizing apparatus may be used to devices that deposit organic or inorganic thin films by chemical vapor deposition and/or atomic layer deposition processes, devices for supplying precursor materials that are deposited to form a thin film in organic light emitting diodes, devices that supply organic or inorganic precursor materials for encapsulation, and devices for supplying organic or inorganic polymer.

Abstract translation: 蒸发装置包括室，用于将液体分散到液滴中的喷嘴，与喷嘴电隔离的电极，以及通过向液滴施加热而产生蒸气的加热器。 电压源通过在喷嘴和电极之间施加电压来向液滴施加电荷。 蒸发装置可用于通过化学气相沉积和/或原子层沉积工艺沉积有机或无机薄膜的装置，用于供应在有机发光二极管中沉积以形成薄膜的前体材料的装置，供应有机 或用于封装的无机前体材料，以及用于供应有机或无机聚合物的装置。

公开(公告)号：US20100181566A1

公开(公告)日：2010-07-22

申请号：US12689927

申请日：2010-01-19

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L29/22 ,  H01L29/861 ,  H01L21/36 ,  H01L31/18 ,  H01L31/0296

CPC classification number: H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/078 ,  H01L31/1884 ,  Y02E10/50

Abstract: An electrode structure comprises a semiconductor junction comprising an n-type semiconductor layer and a p-type semiconductor layer; a hole exnihilation layer on the p-type semiconductor layer; and a transparent electrode layer on the hole exnihilation layer. The electrode structure further comprises a conductive layer between the hole exnihilation layer and the transparent electrode layer. In the electrode structure, one or more of the hole exnihilation layer, the conductive layer and the transparent electrode layer may be formed by an atomic layer deposition. In the electrode structure, a transparent electrode formed of a degenerated n-type oxide semiconductor does not come in direct contact with a p-type semiconductor, and thus, annihilation or recombination of holes generated in the p-type semiconductor can be reduced, which increases the carrier generation efficiency. Further, the electric conductivity of the transparent electrode is increased by the conductive layer, which improves electrical characteristics of a device.

Abstract translation: 电极结构包括包含n型半导体层和p型半导体层的半导体结; p型半导体层上的空穴除外层; 以及在透孔层上的透明电极层。 所述电极结构还包括在所述孔除硅层和所述透明电极层之间的导电层。 在电极结构中，可以通过原子层沉积形成空穴除外层，导电层和透明电极层中的一个或多个。 在电极结构中，由退化的n型氧化物半导体形成的透明电极不与p型半导体直接接触，因此可以减少在p型半导体中产生的空穴的湮灭或复合，其中 提高载波生成效率。 此外，通过导电层增加透明电极的导电性，这改善了器件的电特性。

公开(公告)号：US20100064971A1

公开(公告)日：2010-03-18

申请号：US12560705

申请日：2009-09-16

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/54

CPC classification number: C23C16/45578 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32541

Abstract: A plasma generator may include a first electrode extending in one direction, and a second electrode spaced apart from the first electrode. Facing surfaces of the first electrode and the second electrode may have spiral shapes along the one direction. A cross-section of the first electrode and a cross-section of the second electrode, which are perpendicular to the one direction, may have at least partially concentric shapes. An electrode for generating plasma may include a platform extending in one direction, and at least one protruding thread spirally formed on a surface of the platform along the one direction.

Abstract translation: 等离子体发生器可以包括沿一个方向延伸的第一电极和与第一电极间隔开的第二电极。 第一电极和第二电极的面对表面可沿着该一个方向具有螺旋形状。 第一电极的横截面和垂直于一个方向的第二电极的横截面可以具有至少部分同心的形状。 用于产生等离子体的电极可以包括沿着一个方向延伸的平台，以及至少一个突出的螺纹螺旋地沿着该一个方向形成在平台的表面上。

公开(公告)号：US20100037820A1

公开(公告)日：2010-02-18

申请号：US12539490

申请日：2009-08-11

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455

CPC classification number: C23C16/45551

Abstract: A vapor deposition reactor includes a reaction module includes a first injection unit for injecting a first material onto a substrate. At least one second injection unit is placed within the first injection unit for injecting a second material onto the substrate. The substrate passes the reaction module through a relative motion between the substrate and the reaction module. The vapor deposition reactor advantageously injects a plurality of materials onto the substrate while the substrate passes the reaction module without exposing the substrate to the atmosphere in a chamber.

Abstract translation: 气相沉积反应器包括反应模块，其包括用于将第一材料注入到基底上的第一注射单元。 至少一个第二注射单元被放置在第一注射单元内，用于将第二材料注射到基底上。 基板通过反应模块通过基板和反应模块之间的相对运动。 气相沉积反应器有利地将多种材料注入到衬底上，同时衬底通过反应模块而不将衬底暴露在腔室中的大气中。

公开(公告)号：US08470718B2

公开(公告)日：2013-06-25

申请号：US12539477

申请日：2009-08-11

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H01L21/31

CPC classification number: H01L21/02521 ,  C23C16/45551 ,  H01L21/4814

Abstract: A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.

Abstract translation: 气相沉积反应器包括填充有第一材料的腔室和腔室中的至少一个反应模块。 反应模块可以被配置为使得基板通过反应模块通过基板和反应模块之间的相对运动。 反应模块可以包括用于将第二材料注入基底的注射单元。 一种形成薄膜的方法包括将基板定位在室中，填充室中的第一材料，相对于室中的反应模块移动基板，以及在基板通过反应模块时将第二材料注入到基板。