公开(公告)号：US5233208A

公开(公告)日：1993-08-03

申请号：US979392

申请日：1992-11-19

Applicant: Jacques Thillays

Inventor： Jacques Thillays

IPC: H01L31/167

CPC classification number: H01L31/167 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265

Abstract: The invention relates to a photocoupler comprising a light emitting element and a light receiving element, the light emitting element having a first and a second electrode in electrical contact with a first and a second contact pin, respectively, by means of which the light emitting element is fixed in position, the light receiving element having a third and a fourth electrode in electrical contact with a third and a fourth contact pin, respectively, by means of which the light receiving element is fixed in position. The light emitting element and the light receiving element are situated opposite one another and enveloped in a first solid and transparent layer, surrounded at least in part by a second solid layer provided in such a manner as to reflect the light. According to the invention, a pre-formed housing has a bottom and side walls, the bottom having at least one cavity which accommodates a first end of the first, second, third and fourth pin and a first, second, third and fourth slot in which central portions of the first, second, third and fourth pins, respectively, are held.

Abstract translation: 本发明涉及一种包括发光元件和光接收元件的光电耦合器，该发光元件具有分别与第一和第二接触针电接触的第一和第二电极，借助于该发光元件，发光元件 光接收元件分别具有与第三和第四接触针电接触的第三和第四电极，光接收元件固定在适当的位置上。 发光元件和光接收元件彼此相对定位并且包围在第一固体和透明层中，至少部分地被以以反射光的方式设置的第二固体层包围。 根据本发明，预成型壳体具有底壁和侧壁，底部具有容纳第一，第二，第三和第四销的第一端的至少一个空腔，以及第一，第二，第三和第四插槽 分别保持第一，第二，第三和第四销的中心部分。

公开(公告)号：US5231652A

公开(公告)日：1993-07-27

申请号：US717737

申请日：1991-06-19

Applicant: Geoffrey Harding

Inventor： Geoffrey Harding

IPC: G01N23/18 ,  G01N23/20 ,  G01N23/201 ,  G01V5/00 ,  G21K1/02

CPC classification number: G01V5/0025 ,  G01N23/201 ,  G21K1/025

Abstract: A first diaphragm arrangement is between a polychromatic X-ray radiator and an examination region for passing a primary radiation beam traversing the examination region on the generated surface of a cone. A detector arrangement comprising several detector elements receives radiation passed by the first diaphragm arrangement and a second diaphragm arrangement, which is located between the examination region and the detector arrangement and assigns to each respective detector element the scattered radiation which is scattered in a part of the primary radiation beam at a given scattering angle. The association between the individual sections of the primary radiation beam and the different detector elements is such that the second diaphragm arrangement has a slot-shaped opening and the shape of the slot-shaped opening and of the detector elements is adapted to the shape of a cross-section of the primary radiation beam.

Abstract translation: 第一隔膜布置在多色X射线辐射器和检查区域之间，用于使遍及检测区域的主辐射束穿过所生成的锥体的表面。 包括若干检测器元件的检测器装置接收由第一隔膜装置通过的辐射和位于检查区域和检测器装置之间的第二隔膜装置，并且分配给每个相应的检测器元件，散射在第 主辐射束在给定的散射角度。 主辐射束的各个部分和不同的检测器元件之间的关联使得第二光阑装置具有槽形开口，并且槽形开口和检测器元件的形状适合于 主辐射束的横截面。

公开(公告)号：US5227652A

公开(公告)日：1993-07-13

申请号：US970982

申请日：1992-11-03

Applicant: Heinz-Peter Frerichs

Inventor： Heinz-Peter Frerichs

IPC: G11C16/04

CPC classification number: G11C16/0483

Abstract: A semiconductor memory having non-volatile memory cells which can be electrically programmed and erased by means of tunnelling current (EEPROM) with a floating-gate transistor, the cells being arranged in memory cell groups of n lines and m columns each, n cells being connected in series, which serial connection forms the bit line for the columns of a cell block, while the control gate is common to m memory cells of one line of the cell block situated next to one another and forms the word line for the line in the memory cell group. The regions (injector regions) of the n cells of a column of a memory cell group situated below the gate oxide are interconnected and thus form a programming line which is separated from the source and drain zones of the floating-gate transistors. The result is a reduction in the programming voltage to be applied, since the programming voltage applied to each cell of a column is independent of the programming condition of the cells of a column. In addition, this renders it possible to program the cells in a random manner.

Abstract translation: 一种具有非易失性存储单元的半导体存储器，其可以通过利用浮栅晶体管的隧穿电流（EEPROM）进行电编程和擦除，这些单元被布置在n行和m列的存储单元组中，n个单元为 串联连接形成单元块列的位线，而控制栅极是彼此相邻的单元块的一行的m个存储单元共同的，并且形成用于该行的行的字线 存储单元组。 位于栅极氧化物下方的存储单元组的列的n个单元的区域（注入区域）互连，从而形成与浮置栅极晶体管的源极和漏极区分离的编程线。 结果是施加的编程电压的降低，因为施加到列的每个单元的编程电压与列的单元的编程条件无关。 此外，这使得可以以随机方式对单元进行编程。

公开(公告)号：US5221856A

公开(公告)日：1993-06-22

申请号：US833599

申请日：1992-02-10

Applicant: Ronald Dekker ,  Martinus C. A. M. Koolen ,  Henricus G. R. Maas

Inventor： Ronald Dekker ,  Martinus C. A. M. Koolen ,  Henricus G. R. Maas

IPC: H01L21/225 ,  H01L21/285 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/3215 ,  H01L21/331 ,  H01L21/60 ,  H01L29/732

CPC classification number: H01L21/76897 ,  H01L21/2257 ,  H01L21/28506 ,  H01L21/28525 ,  H01L21/32 ,  H01L21/32134 ,  H01L21/32155 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/7325

Abstract: A first device region (10) of one conductivity type adjacent one major surface (1a) of a semiconductor body (1) has a relatively highly doped subsidiary region (11) spaced from the one major surface (1a) by a relatively lowly doped subsidiary region (12). A second device region (20) of the opposite conductivity type within the subsidiary region (12) has an intrinsic subsidiary region (21) and an extrinsic subsidiary region (23,24) surrounding the intrinsic subsidiary region (21) forming respective first and second pn junctions (22,25) with the relatively lowly doped subsidiary region (12). A third device region (30) of the one conductivity type is formed within the intrinsic subsidiary region (21) surface (1a). An additional region (60,60',61,62) is provided beneath the extrinsic subsidiary region (23,24) so as to lie within the spread of the depletion region (250) associated with the second pn junction (25) when the first and second pn junction (22,25) are reverse-biassed thereby extending the depletion region (250) beneath the emitter region (30) to cause an increase in the Early voltage (V.sub.eaf) of the device.

Abstract translation: 与半导体本体（1）的一个主表面（1a）相邻的一种导电类型的第一器件区域（10）具有相对高度掺杂的辅助区域（11），该区域通过相对低掺杂的子元件与一个主表面（1a）间隔开 区域（12）。 在辅助区域（12）内具有相反导电类型的第二设备区域（20）具有内部辅助区域（21）和围绕内部辅助区域（21）的外在辅助区域（23,24），形成相应的第一和第二 pn结（22,25）与相对低掺杂的辅助区域（12）。 一个导电类型的第三器件区域（30）形成在本征辅助区域（21）表面（1a）内。 在外部辅助区域（23,24）的下方提供附加区域（60,60'，61,62），以便当位于与第二pn结（25）相关联的耗尽区域（250）的扩展区内时 第一和第二pn结（22,25）被反向偏压，从而将耗尽区（250）延伸到发射极区（30）之下，以引起器件的早期电压（Veaf）的增加。

公开(公告)号：US5216539A

公开(公告)日：1993-06-01

申请号：US688621

申请日：1991-05-23

Applicant: Pierre Boher ,  Philippe Houdy

Inventor： Pierre Boher ,  Philippe Houdy

IPC: G21K1/06 ,  G02B5/08 ,  G02B5/28

CPC classification number: G02B5/0875 ,  G02B5/0891

Abstract: Device of the mirror type in the range of X-UV rays, comprises a periodic stack, on a support, of a system of superimposed layers, which system includes a lower layer of a first heavy element reflecting at the wavelengths of application of the mirror, and an upper spacer layer of a light element which has low optical absorption at these wavelengths. The system of superimposed layers comprises, between the lower layer and the upper layer, an intermediate layer of a second heavy element reflecting at the wavelengths of application to form a three-layer system. The heavy elements are selected to form together with the spacer element first and second pairs, first of which has greater absorption at the wavelengths of application and exhibits a ratio of contrast of real and complex indices lower than the other second pair. The heavy element of the first pair forms the lower layer of the three-layer system, the intermediate layer being composed of the heavy element of the second pair.

Abstract translation: PCT No.PCT / NL90 / 00147 Sec。 371日期1991年5月23日 102（e）日期1991年5月23日PCT提交1990年10月10日PCT公布。 出版物WO91 / 06021 日期：1991年5月2日。在X射线范围内的反射镜类型的装置包括在叠层的系统的支撑体上的周期性堆叠，该系统包括在 反射镜的应用波长，以及在这些波长处具有低光吸收的光元件的上间隔层。 重叠层的系统在下层和上层之间包括以应用的波长反射以形成三层体系的第二重元素的中间层。 选择重元素与间隔元件第一和第二对一起形成，其首先在施加的波长处具有更大的吸收，并且表现出比其他第二对低的实数和复数指数的对比度比。 第一对的重元素形成三层系统的下层，中间层由第二对的重元素组成。

公开(公告)号：US5216512A

公开(公告)日：1993-06-01

申请号：US738394

申请日：1991-07-31

Applicant: Antonius J. C. Bruijns ,  Rudolph M. Snoeren ,  Bartholomeus G. M. H. Dillen

Inventor： Antonius J. C. Bruijns ,  Rudolph M. Snoeren ,  Bartholomeus G. M. H. Dillen

IPC: G09G5/36 ,  H04N3/15 ,  H04N5/335

CPC classification number: H04N3/155

Abstract: An imaging system includes an image pick-up device with an image sensor having a rectangular detection face which is subdivided into discrete detection sub-faces for converting a radiation intensity distribution on the detection face into an electric signal, the detection sub-faces being arranged in a matrix of n rows and p columns respectively dividing short and long sides of the detection face, an object plane and an optical system which images a radiation intensity distribution in a circle situated in the object plane onto an ellipse situated on the detection face in accordance with a compression factor m. The compression factor may be chosen so that the ellipse spans no more than p/2 columns of the detection face so that video images can be formed at twice the conventional rate. In the case of non-square detection sub-faces, the compression rate may be chosen so that the ellipse spans an equal number of rows and columns, thereby making each detection sub-face correspond to a square in the object plane. When several, mutually shifted image sensors are used, the compression rate of the optical system is adapted to correct a decrease in effective dimension of the detection sub-faces. A CCD sensor is used in an imaging system operating according to the NTSC standard by utilizing correct image compression.

公开(公告)号：US5212413A

公开(公告)日：1993-05-18

申请号：US726470

申请日：1991-07-08

Applicant: Cathal G. Phelan ,  Peter H. Voss ,  Thomas J. Davies ,  Cormac M. O'Connell ,  Leonardus C. M. G. Pfennings, deceased ,  Henricus J. Kunnen, legal representative ,  Hans Ontrop

Inventor： Cathal G. Phelan ,  Peter H. Voss ,  Thomas J. Davies ,  Cormac M. O'Connell ,  Leonardus C. M. G. Pfennings, deceased ,  Henricus J. Kunnen, legal representative ,  Hans Ontrop

IPC: H03K19/173 ,  G11C29/04 ,  H03K3/356

CPC classification number: H03K3/356008

Abstract: When using a laser programmable fuse, a circuit should be 100% stable both before and after the fuse is blown. So far no CMOS circuit can be 100% stable without drawing a constant current. With the "Master fuse Enable" scheme one fuse circuit (master fuse) draws current while disabling all other fuse circuits on-chip. Thus giving 100% stability and reducing power consumption on a chip where no fusing has been done. If, however, one wished to use the rest of the fuses, then the master fuse is blown and all fuse circuits now become active and draw current.

公开(公告)号：US5204546A

公开(公告)日：1993-04-20

申请号：US717731

申请日：1991-06-19

Applicant: Kenneth W. Moulding

Inventor： Kenneth W. Moulding

IPC: H01G4/012 ,  H01L21/822 ,  H01L27/04 ,  H01L27/08

CPC classification number: H01L27/0805

Abstract: In an integrated circuit in which the capacitances of a pair of capacitors are arranged to be in a ratio k by choosing the areas of corresponding plates of the two capacitors to be in this ratio, and the plates are shaped so that the total lengths of their boundaries are also in this ratio so as to reduce the sensitivity of k to manufacturing tolerances, this sensitivity is further reduced by arranging that the ratios between the numbers of 90.degree. corners exhibited by the respective plates, and the numbers of 270.degree. corners exhibited by the respective plates, are each also substantially equal to k. To make this possible an aperture is arranged to be present in each plate.

公开(公告)号：US5198389A

公开(公告)日：1993-03-30

申请号：US834046

申请日：1992-02-10

Applicant: Andreas M. Th. P. van der Putten ,  Johannes W. G. DeBakker ,  Johannes M. G. Rikken

Inventor： Andreas M. Th. P. van der Putten ,  Johannes W. G. DeBakker ,  Johannes M. G. Rikken

IPC: H01L21/3205 ,  H01L21/288 ,  H01L21/768 ,  H01L23/522 ,  H05K3/42 ,  H05K3/46

CPC classification number: H01L21/76879 ,  H01L21/288 ,  H01L2924/0002 ,  H05K3/422 ,  H05K3/4644 ,  Y10S438/903

Abstract: A TiW layer (14 and 14') between a nickel plug (16 and 16') and a silicon substrate (1) of a semiconductor device precludes the formation of nickel silicides. The nickel plugs are formed by means of an electroless nickel bath to which stabilizers are added which ensure that the contact holes (13 and 13') are filled with nickel right up to the edge.

公开(公告)号：US5197969A

公开(公告)日：1993-03-30

申请号：US754880

申请日：1991-09-04

Applicant: Albert Visscher ,  Marinus P. Koster

Inventor： Albert Visscher ,  Marinus P. Koster

IPC: A45D26/00

CPC classification number: A45D26/0028

Abstract: A depilation apparatus having a number of disc-shaped pinching plates (19) provided on a drive shaft (7) and a number of thrust cogs (41) provided on an auxiliary shaft (21), by means of which cogs the pinching plates are each tiltable about a first and a second tilting axis (81, 91) from a catching position into a pinching position in which the relevant pinching plate (19) exerts a pinching force on an adjacent pinching plate (19) tilted into the pinching position. Each pair of pinching plates positioned next to one another (19a, 19b), (19b, 19c), (19c, 19a) has a unique thrust cog (41a, 41b, 41c), so that each pinching plate (19) is in cooperation with each of its two adjacent pinching plates (19) and the hair catching range of the pinching plates (19) extends over the entire depilation opening (3). The thrust cogs (41a, 41b, 41c) are provided on the auxiliary shaft (21) at mutual angles of 120.degree., so that an even operation of the depilation apparatus in time is achieved and an undersirable contact between the pinching plates (19) at a side of the drive shaft (7) remote from the depilation opening (3) is prevented. The pinching plates (19) each have a central, star-shaped opening (65, 67, 69, 71) by means of which the relevant pinching plate (19) is mounted in recesses (59, 61, 63) of three comb-shaped support ridges (51, 53, 55) of the drive shaft (7), which ridges extend parallel to a central portion (57) of the drive shaft (7) at mutual angles of 120.degree.. A favorable moment arm ratio for the pinching force and a stable support of the pinching plates (19) in the pinching position are achieved by this.

Abstract translation: 一种脱毛装置，具有设置在驱动轴（7）上的多个盘形夹持板（19）和设置在辅助轴（21）上的多个推力齿（41），夹紧板 每个可倾斜的第一和第二倾斜轴线（81,91）从捕获位置到夹持位置，在夹紧位置中相关的夹持板（19）对倾斜到夹持位置的相邻夹持板（19）施加夹紧力。 彼此相邻的每对夹持板（19a，19b），（19b，19c），（19c，19a）具有独特的推力齿轮（41a，41b，41c），使得每个夹紧板（19）处于 与其两个相邻的夹持板（19）中的每一个的夹持和夹持板（19）的发条范围在整个脱毛开口（3）上延伸。 推力齿轮（41a，41b，41c）以120°的相互角度设置在辅助轴（21）上，从而实现脱毛装置的均匀操作，并且夹紧板（19）之间的不合意接触， 在远离脱毛开口（3）的驱动轴（7）的一侧被防止。 夹持板（19）各自具有中心的星形开口（65,67,69,71），借助于该夹紧板将相关的夹持板（19）安装在三个梳状的凹槽（59,​​61,63）中， 所述驱动轴（7）的支撑脊（51,53,55），所述支撑脊平行于所述驱动轴（7）的中心部分（57）延伸，相互的角度为120°。 通过这种方式实现夹持力的有利力矩比和夹持板（19）在捏合位置的稳定支撑。