公开(公告)号：US20060285789A1

公开(公告)日：2006-12-21

申请号：US10554312

申请日：2004-04-22

Applicant: Marek Michalewicz ,  Zygmunt Rymuza

Inventor： Marek Michalewicz ,  Zygmunt Rymuza

IPC: G02B6/12

CPC classification number: B81B3/0051 ,  B81B3/0021 ,  B81B2201/0285 ,  B81B2203/0109 ,  B81B2203/051 ,  G01C19/00 ,  G01D21/00 ,  G01P15/0894 ,  Y10S977/724 ,  Y10S977/725 ,  Y10S977/732 ,  Y10S977/733

Abstract: A monolithic micro or nano electromechanical transducer device includes a pair of substrates (20, 25) respectively mounting one or more elongate electrical conductors (40) and resilient solid state hinge means (30, 32) integral with and linking the substrates to relatively locate the substrates so that respective elongate electrical conductors (40) of the substrates are opposed at a spacing that permits a detectable quantum tunnelling current between the conductors when a suitable electrical potential difference is applied across the conductors. The solid state hinge means permits relative parallel translation of the substrates transverse to the elongate electrical conductors.

Abstract translation: 单片微型或纳米机电换能器装置包括分别安装一个或多个细长电导体（40）和弹性固态铰链装置（30,32）的一对基板（20,25），所述弹性固态铰链装置与所述基板成一体并将其连接， 衬底，使得当在导体上施加合适的电势差时，衬底的各个细长电导体（40）以允许导体之间的可检测的量子隧穿电流的间隔相对。 固态铰链装置允许基板横向于细长电导体的相对平行平移。

公开(公告)号：US20240208801A1

公开(公告)日：2024-06-27

申请号：US17747879

申请日：2022-05-18

Applicant: UPBEAT TECHNOLOGY Co., Ltd

Inventor： Hsi-Wen TUNG ,  Hsien-Lung HO

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81C1/00182 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81C2201/013 ,  B81C2201/0159 ,  B81C2201/053

Abstract: A MEM vibration sensor includes a substrate and a sensing-device. The substrate includes a first supporting-portion and a cavity. The sensing-device includes a first sensing-unit, a second sensing-unit, a first metal pad and a second metal pad. The first sensing-unit includes a second supporting-portion and a vibrating-portion. The second supporting-portion is located on the first supporting-portion and is connected to the first supporting-portion via a first dielectric material. The vibrating-portion is located on the cavity, and is connected with the second supporting-portion through an elastic connecting-portion. The second sensing-unit is located on the first sensing-unit and includes a sensing-portion and a third supporting-portion. The sensing-portion is located on the vibrating-portion and has a gap with the vibrating-portion. The third supporting-portion is located on the second supporting-portion, is connected to the sensing-portion, and is connected to the second supporting-portion through a second dielectric material.

公开(公告)号：US20230416078A1

公开(公告)日：2023-12-28

申请号：US18337176

申请日：2023-06-19

Applicant: Infineon Technologies AG

Inventor： Andreas Bogner ,  Christian Bretthauer ,  Abhiraj Basavanna

IPC: B81B3/00

CPC classification number: B81B3/0078 ,  B81B3/0021 ,  B81B2203/0127 ,  B81B2201/0242 ,  B81B2201/0285 ,  B81B2201/0235

Abstract: A semiconductor device has a deformable membrane, e.g., for the measurement of at least one of an acceleration, a vibration, or a pressure. The membrane has a supporting connection with a support structure which includes at least one elastic supporting connection. Also disclosed are a sensor device including the semiconductor device along with methods for manufacturing the semiconductor device and the sensor device.

公开(公告)号：US20230294976A1

公开(公告)日：2023-09-21

申请号：US18065978

申请日：2022-12-14

Applicant: Infineon Technologies AG

Inventor： Abhiraj Basavanna ,  Somu Goswami ,  Andreas Bogner

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81C1/00666 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2201/0285 ,  B81B2203/0127

Abstract: A semiconductor device for use in a sensor device has a deformable membrane for the measurement of an acceleration, a vibration, or a pressure. The semiconductor device includes a deformable membrane having a membrane border; a structure holding the deformable membrane in correspondence of the membrane border; at least one electric contact to obtain an electric signal indicative of deformation of the deformable membrane; and mass elements suspended from the membrane.

公开(公告)号：US11697587B2

公开(公告)日：2023-07-11

申请号：US17541290

申请日：2021-12-03

Applicant: AAC ACOUSTIC TECHNOLOGIES (SHENZHEN) CO., LTD.

Inventor： Tingting Hong ,  Zhenkui Meng ,  Kai Wang

IPC: H04R25/00 ,  B81B7/02 ,  B81B3/00

CPC classification number: B81B7/02 ,  B81B3/0027 ,  H04R25/00 ,  H04R25/606 ,  B81B2201/0285

Abstract: The present disclosure provides a bone-conduction sensor assembly. The bone-conduction sensor assembly includes a housing, a printed circuit board assembly forming a first receiving cavity together with the housing, a diaphragm accommodated in the first receiving cavity, a MEMS die and an ASIC chip mounted on the printed circuit board assembly. The MEMS die electrically connects to the ASIC chip through a bonding wire. A first weight is located on a surface of the diaphragm facing to the printed circuit board assembly. A position of the first weight has an avoiding portion corresponding to the bonding wire.

公开(公告)号：US11691871B2

公开(公告)日：2023-07-04

申请号：US17351865

申请日：2021-06-18

Applicant: Infineon Technologies AG

Inventor： Somu Goswami ,  Christian Bretthauer ,  Matthias Friedrich Herrmann ,  Gunar Lorenz

IPC: B81B7/00 ,  H04R3/00

CPC classification number: B81B7/008 ,  H04R3/002 ,  B81B2201/0257 ,  B81B2201/0285 ,  H04R2201/003

Abstract: A MEMS vibration sensor includes a membrane having an inertial mass, the membrane being affixed to a holder of the MEMS vibration sensor; and a segmented backplate spaced apart from the membrane, the segmented backplate being affixed to the holder.

公开(公告)号：US11681897B2

公开(公告)日：2023-06-20

申请号：US17114040

申请日：2020-12-07

Applicant: Cornell University

Inventor： Amit Lal ,  Serhan Ardanuc ,  Jason T. Hoople ,  Justin C. Kuo

IPC: G06N3/04 ,  B81B3/00 ,  G01S7/521 ,  G01S15/02 ,  G06V40/13 ,  G06N3/065 ,  G01N22/00 ,  G01N29/02 ,  G01N29/036 ,  H01J49/02 ,  G01S15/89 ,  G01S7/52 ,  H01H1/00

CPC classification number: G06N3/04 ,  B81B3/0021 ,  G01N22/00 ,  G01N29/022 ,  G01N29/036 ,  G01S7/521 ,  G01S15/02 ,  G06N3/065 ,  G06V40/1306 ,  H01J49/025 ,  B81B2201/018 ,  B81B2201/0214 ,  B81B2201/0285 ,  B81B2203/04 ,  G01S7/52079 ,  G01S15/8925 ,  H01H1/0094

Abstract: Techniques, systems, and devices are described for implementing for implementing computation devices and artificial neurons based on nanoelectromechanical (NEMS) systems. In one aspect, a nanoelectromechanical system (NEMS) based computing element includes: a substrate; two electrodes configured as a first beam structure and a second beam structure positioned in close proximity with each other without contact, wherein the first beam structure is fixed to the substrate and the second beam structure is attached to the substrate while being free to bend under electrostatic force. The first beam structure is kept at a constant voltage while the other voltage varies based on an input signal applied to the NEMS based computing element.

公开(公告)号：US20150344293A1

公开(公告)日：2015-12-03

申请号：US14821997

申请日：2015-08-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： David L. HARAME ,  Anthony K. STAMPER

IPC: B81B3/00

CPC classification number: B81B3/0027 ,  B81B2201/0285 ,  H01L21/84 ,  H01L27/1203 ,  H01L41/1136 ,  H01L2224/73265 ,  H03H3/02 ,  H03H9/1007 ,  H03H9/173 ,  H03H2001/0064 ,  H03H2003/027 ,  H03H2009/155 ,  H03H2009/241

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.

Abstract translation: 提供了与CMOS器件集成的体声波滤波器和/或体声波谐振器，制造方法和设计结构。 该方法包括从绝缘体上的硅层形成单晶束。 该方法还包括在单晶束上提供绝缘体材料涂层。 该方法还包括通过暴露出绝缘体下方的晶片的绝缘体材料形成通孔。 绝缘体材料保留在单晶束上。 该方法还包括在通孔和绝缘体材料上提供牺牲材料。 该方法还包括在牺牲材料上提供盖子。 该方法进一步包括通过盖子排出牺牲材料和在单一结晶束下方的晶片的一部分，以在单晶束之下形成单结晶束上方的上腔和晶片中的下腔。

公开(公告)号：US08601871B2

公开(公告)日：2013-12-10

申请号：US13711911

申请日：2012-12-12

Applicant: DENSO CORPORATION ,  Toyota Jidosha Kabushiki Kaisha

Inventor： Tameharu Ohta ,  Tetsuo Fujii ,  Masanobu Azukawa ,  Takeshi Ito ,  Itaru Ishii

IPC: G01D11/24

CPC classification number: G01C19/56 ,  B81B7/0058 ,  B81B2201/0235 ,  B81B2201/0285 ,  G01D18/00 ,  G01P15/08 ,  H01L2224/48247 ,  H05K13/00 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49826

Abstract: A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.

公开(公告)号：US08413507B2

公开(公告)日：2013-04-09

申请号：US12801405

申请日：2010-06-08

Applicant: Tetsuo Fujii ,  Hisanori Yokura ,  Hirofumi Higuchi

Inventor： Tetsuo Fujii ,  Hisanori Yokura ,  Hirofumi Higuchi

IPC: G01C19/56 ,  G01P15/125

CPC classification number: H01L27/1203 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2201/047 ,  B81C1/00182 ,  G01C19/5755 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L21/84

Abstract: A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer.

Abstract translation: 半导体动态量传感器具有包括半导体衬底，半导体衬底的主表面上的绝缘层和绝缘层上的半导体层的衬底。 主表面具有横截面为梯形或三角形的突起。 半导体层由通孔分割成可动部。 突出部的尖端位于可动部的正下方，与基板的厚度方向与可动部隔开预定的距离。 突起的尖端的宽度小于基板的平面方向上的可动部的宽度。 突起的尖端和可动部之间的距离等于绝缘层的厚度。