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    MEMS device and fabrication method thereof
    12.
    发明申请
    MEMS device and fabrication method thereof 失效
    MEMS器件及其制造方法

    公开(公告)号：US20030183887A1

    公开(公告)日：2003-10-02

    申请号：US10384495

    申请日：2003-03-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eun-sung Lee ,  Chung-woo Kim ,  In-sang Song ,  Jong-seok Kim ,  Moon-chul Lee

    IPC: H01L021/00 ,  H01L027/14 ,  H01L029/82

    CPC classification number: B81B3/0078 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C2201/0107 ,  B81C2201/014 ,  H01H59/0009

    Abstract: A method for fabricating a MEMS device having a fixing part fixed to a substrate, a connecting part, a driving part, a driving electrode, and contact parts, includes patterning the driving electrode on the substrate; forming an insulation layer on the substrate; patterning the insulation layer and etching a fixing region and a contact region of the insulation layer; forming a metal layer over the substrate; planarizing the metal layer until the insulation layer is exposed; forming a sacrificial layer on the substrate; patterning the sacrificial layer to form an opening exposing a portion of the insulation layer and the metal layer in the fixing region; forming a MEMS structure layer on the sacrificial layer to partially fill the opening, thereby forming sidewalls therein; and selectively removing a portion of the sacrificial layer by etching so that a portion of the sacrificial layer remains in the fixing region.

    Abstract translation: 一种用于制造具有固定到基板上的固定部件，连接部件，驱动部件，驱动电极和接触部件的MEMS器件的方法，包括在所述基板上图形化所述驱动电极; 在所述基板上形成绝缘层; 图案化绝缘层并蚀刻绝缘层的固定区域和接触区域; 在衬底上形成金属层; 平坦化金属层直到绝缘层露出; 在所述基板上形成牺牲层; 图案化牺牲层以形成露出固定区域中绝缘层和金属层的一部分的开口; 在所述牺牲层上形成MEMS结构层以部分地填充所述开口，从而在其中形成侧壁; 并且通过蚀刻选择性地去除牺牲层的一部分，使得牺牲层的一部分保留在固定区域中。

    Trilayered beam MEMS device and related methods
    13.
    发明申请
    Trilayered beam MEMS device and related methods 有权
    三层梁MEMS器件及相关方法

    公开(公告)号：US20030119221A1

    公开(公告)日：2003-06-26

    申请号：US10290920

    申请日：2002-11-08

    Applicant: Coventor, Inc.

    Inventor： Shawn Jay Cunningham ,  Svetlana Tatic-Lucic

    IPC: H01L021/00 ,  H01L029/82

    CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

    Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

    Abstract translation: 三层梁MEMS器件及相关方法。 根据一个实施例，提供一种制造三层梁的方法。 该方法可以包括在衬底上沉积牺牲层并在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且通过结构层将通孔形成到第一导电微结构。 此外，该方法可以包括以下：在结构层和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 以及去除足够量的牺牲层以便将第一导电微结构与衬底分开，其中结构层在第一端由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

    Microstructure, process for manufacturing thereof and devices incorporating the same
    15.
    发明授权
    Microstructure, process for manufacturing thereof and devices incorporating the same 失效
    微结构，制造方法和结合其的装置

    公开(公告)号：US5658698A

    公开(公告)日：1997-08-19

    申请号：US378610

    申请日：1995-01-26

    Applicant: Takayuki Yagi ,  Masatake Akaike

    Inventor： Takayuki Yagi ,  Masatake Akaike

    IPC: B81B3/00 ,  B81C1/00 ,  G03F7/00 ,  H01H59/00 ,  H01L23/00 ,  H02N1/00 ,  H02N2/00 ,  H02N2/02

    CPC classification number: B81C1/0092 ,  B81C1/00936 ,  H01H59/0009 ,  H02N1/006 ,  B81B2203/0118 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2203/031

    Abstract: A microstructure comprising a substrate (1), a patterned structure (beam member) (2) suspended over the substrate (1) with an air-space (4) therebetween and supporting structure (3) for suspending the patterned structure (2) over the substrate (1).The microstructure is prepared by using a sacrificial layer (7) which is removed to form the space between the substrate (1) and the patterned structure (2) adhered to the sacrificial layer. In the case of using resin as the material of the sacrificial layer, the sacrificial layer can be removed without causing sticking, and an electrode can be provided on the patterned structure.The microstructure can have application as electrostatic actuator etc., depending on choice of shape and composition.

    Abstract translation: 一种微结构，其包括衬底（1），悬挂在衬底（1）上的图案化结构（梁构件）（2），其间具有空气空间（4）和用于将图案化结构（2）悬挂在其上的支撑结构（3） 基板（1）。 通过使用牺牲层（7）来制备微结构，所述牺牲层被除去以形成衬底（1）和附着到牺牲层的图案化结构（2）之间的空间。 在使用树脂作为牺牲层的材料的情况下，可以除去牺牲层而不引起粘附，并且可以在图案化结构上提供电极。 根据形状和组成的选择，微结构可以用作静电致动器等。

    Method for Fabricating Suspended MEMS Structures
    19.
    发明申请
    Method for Fabricating Suspended MEMS Structures 有权
    制造悬浮MEMS结构的方法

    公开(公告)号：US20160304340A1

    公开(公告)日：2016-10-20

    申请号：US14687943

    申请日：2015-04-16

    Applicant: David J. Meyer ,  Brian P. Downey

    Inventor： David J. Meyer ,  Brian P. Downey

    IPC: B81C1/00

    CPC classification number: B81C1/00539 ,  B81C1/00936 ,  B81C2201/0107 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/0177

    Abstract: A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure.

    Abstract translation: 一种用于制造悬浮微机电系统（MEMS）结构的方法，其包括部分或完全悬浮在衬底上的外延半导体功能层。 在基板上形成牺牲剥离层和功能元件层。 功能器件层被蚀刻以在功能器件层中形成窗口，其限定要由功能器件层形成的悬置的MEMS器件的轮廓。 然后用选择性释放蚀刻剂蚀刻牺牲剥离层，以去除由窗口限定的区域中的功能层下方的牺牲剥离层，以形成悬浮的MEMS结构。

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