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    Method for Functionalising Fluid Lines Contained in a Micromechanical Device, Micromechanical Device Including Functionalised Lines, and Method for Manufacturing Same
    12.
    发明申请
    Method for Functionalising Fluid Lines Contained in a Micromechanical Device, Micromechanical Device Including Functionalised Lines, and Method for Manufacturing Same 有权
    包含在机械装置中的流体线的功能化方法，包括功能化线的微机械装置及其制造方法

    公开(公告)号：US20130149196A1

    公开(公告)日：2013-06-13

    申请号：US13805491

    申请日：2011-06-29

    Applicant: Vincent Agache ,  Antoine Hoang ,  Francoise Vinet

    Inventor： Vincent Agache ,  Antoine Hoang ,  Francoise Vinet

    IPC: G03F7/24

    CPC classification number: G03F7/24 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2201/06 ,  B81C1/00206 ,  B81C2201/0154 ,  F04B19/006

    Abstract: The present invention relates to a method for functionalising fluid lines (1b) in a micromechanical device, the walls of which include an opaque layer. For this purpose, the invention provides a method for functionalising a micromechanical device provided with a fluid line including a peripheral wall (5) having a surface (2) outside the line and an inner surface (3) defining a space (1b) in which a fluid can circulate, the peripheral wall at least partially including a silicon layer (5a). The method includes the following steps: a) providing a device, the peripheral wall (5) of which at least partially includes a silicon layer (5a) having, at least locally, a thickness (e) of more than 100 nm and less than 200 nm, advantageously of 160 to 180 nm; c) silanising at least the inner surface of the fluid line; d) the localised, selective photo-deprotection on at least the inner surface of the silanised device by exposing the peripheral wall (5) at the point at which said wall has a thickness (e) of more than 100 nm and less than 200 nm, advantageously of 160 to 180 nm.

    Abstract translation: 本发明涉及一种在微机械装置中功能化流体管线（1b）的方法，其中壁部包括不透明层。 为此，本发明提供了一种功能化微机械装置的方法，该微机械装置具有流体管线，该流体管线包括具有在管线外部的表面（2）的周壁（5）和限定空间（1b）的内表面（3），其中 流体可以循环，周壁至少部分地包括硅层（5a）。 该方法包括以下步骤：a）提供一种器件，其外围壁（5）至少部分地包括硅层（5a），该硅层至少局部地具有大于100nm的厚度（e）并且小于 200nm，有利地为160〜180nm; c）至少对流体管线的内表面进行硅烷化; d）通过在所述壁的厚度（e）大于100nm且小于200nm的点处暴露周壁（5），至少在硅烷化装置的内表面上进行局部选择性光 - 去保护 ，有利地为160至180nm。

    METHOD FOR PRODUCING LOCALIZED PATTERNS
    13.
    发明申请
    METHOD FOR PRODUCING LOCALIZED PATTERNS 有权
    生产本地化图案的方法

    公开(公告)号：US20110076797A1

    公开(公告)日：2011-03-31

    申请号：US12879473

    申请日：2010-09-10

    Applicant: Mohamed BENWADIH

    Inventor： Mohamed BENWADIH

    IPC: H01L21/208 ,  H01L21/312 ,  H01L21/302

    CPC classification number: H01L51/0004 ,  B81C1/00492 ,  B81C2201/0154 ,  H01L51/0541 ,  H01L51/5012

    Abstract: A method for producing at least one pattern on a top surface of a support made from a material presenting a first thermal conductivity comprises a step of arranging of a mask made from a material presenting a second thermal conductivity and comprising at least one recess having a shape corresponding to that of the pattern, in contact with a bottom surface of the support, the ratio of the first conductivity over the second conductivity being greater than or equal to 2, or smaller than or equal to ½, throughout the duration of the method. The method further comprises a step of depositing on the top surface a solution comprising a material designed to form the pattern, and a step of evaporating the solution.

    Abstract translation: 在由具有第一热导率的材料制成的支撑体的顶表面上产生至少一种图案的方法包括布置由具有第二热导率的材料制成的掩模的步骤，并且包括至少一个具有形状 对应于与支撑体的底表面接触的图案的图案，在整个方法的整个持续时间期间，第一导电率在第二导电率上的比率大于或等于2，或小于或等于½。 该方法还包括在顶表面上沉积包含设计成形成图案的材料的溶液的步骤和蒸发该溶液的步骤。

    SYSTEM AND METHODS OF LASER ASSISTED FIELD INDUCED OXIDE NANOPATTERNING
    14.
    发明申请
    SYSTEM AND METHODS OF LASER ASSISTED FIELD INDUCED OXIDE NANOPATTERNING 有权
    激光辅助氧化物纳米管的系统和方法

    公开(公告)号：US20090085258A1

    公开(公告)日：2009-04-02

    申请号：US12180173

    申请日：2008-07-25

    Applicant: Mark C. HERSAM ,  Liam S.C. PINGREE

    Inventor： Mark C. HERSAM ,  Liam S.C. PINGREE

    IPC: B29C59/16

    CPC classification number: H01L21/31654 ,  B81C1/00031 ,  B81C2201/0154 ,  G01Q80/00

    Abstract: A method of forming a nanoscale pattern on a substrate surface. In one embodiment, the method includes the steps of providing a substrate having a surface; providing a nanoscale pattern forming device, comprising an elongated cantilever that has a tip portion proximate an end of the elongated cantilever; and controllably illuminating at least the tip portion of the cantilever with a beam of substantially coherent monoenergetic particles when the cantilever moves relative to the substrate to form a nanoscale pattern on the surface, wherein the tip portion of the cantilever is made from lightly doped silicon.

    Abstract translation: 在衬底表面上形成纳米尺度图案的方法。 在一个实施例中，该方法包括提供具有表面的基底的步骤; 提供纳米级图案形成装置，其包括细长悬臂，其具有靠近所述细长悬臂的端部的尖端部分; 并且当所述悬臂相对于所述基底移动以在所述表面上形成纳米尺度图案时，所述悬臂的所述尖端部分由轻掺杂的硅制成，并且可靠地照射所述悬臂的所述尖端部分。

    Shape controlled growth of nanostructured films and objects
    15.
    发明申请
    Shape controlled growth of nanostructured films and objects 有权
    纳米结构膜和物体的形状控制生长

    公开(公告)号：US20070090489A1

    公开(公告)日：2007-04-26

    申请号：US11586185

    申请日：2006-10-25

    Applicant: Anastasios Hart ,  Alexander Slocum

    Inventor： Anastasios Hart ,  Alexander Slocum

    IPC: H01L29/06 ,  H01L21/469

    CPC classification number: B81C1/00031 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00634 ,  B81C2201/0154 ,  B81C2201/0183

    Abstract: A method and apparatus for growing nanostructures is presented. A growth substrate including at least one reaction site is provided as is a device disposed proximate the growth substrate. Energy is provided to the reaction site and a reaction species is introduced to the growth substrate. This results in a nanostructure growing from the reaction site wherein the growth process of the nanostructure is controlled by providing a force to the device.

    Abstract translation: 提出了一种生长纳米结构的方法和装置。 提供包括至少一个反应位点的生长衬底，就像设置在生长衬底附近的器件一样。 向反应部位提供能量，将反应物质引入生长基质。 这导致从反应部位生长的纳米结构，其中通过向该器件提供力来控制纳米结构的生长过程。

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