公开(公告)号：US5798042A

公开(公告)日：1998-08-25

申请号：US663644

申请日：1996-06-14

Applicant: Wen-Hwa Chu ,  Mauro Ferrari

Inventor： Wen-Hwa Chu ,  Mauro Ferrari

IPC: A61K9/00 ,  A61K9/22 ,  A61K9/50 ,  A61K9/52 ,  B01D39/16 ,  B01D39/20 ,  B01D67/00 ,  B01D69/02 ,  B01D69/12 ,  B01D71/02 ,  B01J13/02 ,  B81B1/00 ,  B81C1/00 ,  C04B41/45 ,  C23C16/01 ,  G03F7/00 ,  B01D69/10

CPC classification number: G03F7/0015 ,  A61K9/0024 ,  A61K9/0097 ,  B01D39/1692 ,  B01D39/20 ,  B01D67/0058 ,  B01D67/0062 ,  B01D67/0072 ,  B01D67/0083 ,  B01D69/02 ,  B01D69/12 ,  B01D71/02 ,  B01J13/02 ,  B81B3/007 ,  B81C1/00087 ,  B81C1/00246 ,  C04B41/4582 ,  C23C16/01 ,  G03F7/00 ,  B01D2323/08 ,  B01D2323/10 ,  B01D2325/02 ,  B01D2325/04 ,  B81B2201/10 ,  B81C2201/014 ,  B81C2201/032 ,  B81C2203/0728 ,  B81C2203/075

Abstract: Microfabricated filters utilizing a bulk substrate structure and a thin film structure and a method for constructing such filters. The pores of the filters are defined by spaces between the bulk substrate structure and the thin film structure and are of substantially uniform width, length and distribution. The width of the pores is defined by the thickness of a sacrificial layer and therefore may be smaller than the limit of resolution obtainable with photolithography. The filters provide enhanced mechanical strength, chemical inertness, biological compatibility, and throughput. The filters are constructed using relatively simple fabrication techniques. Also, microfabricated containment wells and capsules constructed with such filters for the immunological isolation of cell transplants and a method for constructing such containment wells and capsules. The pores of the wells and capsules are large enough to let a desired biologically-active molecular product through, while blocking the passage of all larger immunological molecules. The containment wells and capsules provide enhanced biological compatibility and useful life.

公开(公告)号：US5645684A

公开(公告)日：1997-07-08

申请号：US485815

申请日：1995-06-07

Applicant: Christopher G. Keller

Inventor： Christopher G. Keller

IPC: B81C1/00 ,  A61K9/00 ,  A61K9/50 ,  B01D39/16 ,  B01D39/20 ,  B01D67/00 ,  B01D69/02 ,  B01D69/12 ,  B01D71/02 ,  B44C1/22 ,  B81B1/00 ,  C03C15/00 ,  C23C16/01 ,  G03F7/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/316 ,  H01L29/84 ,  H01L49/00

CPC classification number: B81C1/00246 ,  A61K9/0024 ,  A61K9/0097 ,  B01D39/1692 ,  B01D39/20 ,  B01D67/0058 ,  B01D67/0069 ,  B01D67/0072 ,  B01D67/0083 ,  B01D69/02 ,  B01D69/12 ,  B01D71/02 ,  B81C99/0085 ,  C23C16/01 ,  G03F7/00 ,  B01D2323/24 ,  B01D2325/04 ,  B01D2325/26 ,  B81C2201/032 ,  B81C2203/0728

Abstract: This invention relates to the area of microelectromechanical systems in which electronic circuits and mechanical devices are integrated on the same silicon chip. The method taught herein allows the fabrication of thin film structures in excess of 150 microns in height using thin film deposition processes. Wafers may be employed as reusable molds for efficient production of such structures. Various material properties may be varied within the structures to produce electrical, mechanical or electromechanical devices.

Abstract translation: 本发明涉及电子电路和机械装置集成在同一硅芯片上的微机电系统的面积。 本文教导的方法允许使用薄膜沉积工艺制造高度超过150微米的薄膜结构。 可以将晶片用作可重复使用的模具，以有效地生产这种结构。 各种材料性质可以在结构内变化以产生电气，机械或机电装置。

公开(公告)号：US09752247B2

公开(公告)日：2017-09-05

申请号：US14017510

申请日：2013-09-04

Applicant: University of Southern California

Inventor： Adam L. Cohen

IPC: B81C1/00 ,  C25D5/10 ,  B33Y10/00 ,  C25D1/00 ,  C25D5/02 ,  C25D5/12 ,  H01L21/288 ,  H05K3/24 ,  C25D5/22

CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

公开(公告)号：US20120325264A1

公开(公告)日：2012-12-27

申请号：US13599985

申请日：2012-08-30

Applicant: Josef MATHUNI

Inventor： Josef MATHUNI

IPC: B08B7/00 ,  B08B13/00

CPC classification number: B81C99/0085 ,  B81C2201/032 ,  H01J37/32357

Abstract: An apparatus and the use of such an apparatus and method for producing microcomponents with component structures are presented which are generated in a process chamber on a substrate according to the LIGA method for example and are stripped from the enclosing photoresist with the help of a cooled remote plasma source.

Abstract translation: 本发明提供了一种用于制造具有部件结构的微型部件的这种装置和方法的使用方法，其在例如基于LIGA方法的基板上的处理室中产生，并且借助于冷却的远程 等离子体源

公开(公告)号：US20110247941A1

公开(公告)日：2011-10-13

申请号：US13167451

申请日：2011-06-23

Applicant: Adam L. Cohen

Inventor： Adam L. Cohen

IPC: C25D5/02

CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

Abstract translation: 一种电镀方法，包括：a）使第一衬底与第一制品接触，所述第一制品包括衬底和以衬底形式设置的贴合掩模; b）以第一图案将来自金属离子源的第一金属电镀到所述第一基板上，所述第一图案对应于所述适形掩模图案的所述补体; 和c）从第一基板上去除第一制品。 还公开了电镀制品和电镀装置。

公开(公告)号：US07998331B2

公开(公告)日：2011-08-16

申请号：US12698026

申请日：2010-02-01

Applicant: Adam L. Cohen

Inventor： Adam L. Cohen

IPC: C25D5/02

CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

Abstract translation: 一种电镀方法，包括：a）使第一衬底与第一制品接触，所述第一制品包括衬底和以衬底形式设置的贴合掩模; b）以第一图案将来自金属离子源的第一金属电镀到所述第一基板上，所述第一图案对应于所述适形掩模图案的所述补体; 和c）从第一基板上去除第一制品。 还公开了电镀制品和电镀装置。

公开(公告)号：US20100308010A1

公开(公告)日：2010-12-09

申请号：US12797389

申请日：2010-06-09

Applicant: Pierre Cusin ,  Jean-Philippe Thiebaud

Inventor： Pierre Cusin ,  Jean-Philippe Thiebaud

IPC: C23F1/02

CPC classification number: B81C99/008 ,  B81B3/0075 ,  B81B2201/035 ,  B81C1/00031 ,  B81C1/00087 ,  B81C1/00119 ,  B81C2201/0132 ,  B81C2201/032 ,  C25D1/003 ,  C25D1/20 ,  C25D5/022 ,  G04B13/022 ,  G04B13/026 ,  G04D3/0069

Abstract: The invention relates to a method (1) of fabricating a composite micromechanical component (41, 41′) including the following steps: a) providing (10) a substrate (9, 9′) that includes a horizontal top layer (21) and a horizontal bottom layer (23) made of electrically conductive, micromachinable material, and secured to each other by an electrically insulating, horizontal, intermediate layer (22); b) etching at least one pattern (26) in the top layer (21) through to the intermediate layer (22), so as to form at least one cavity (25) in the substrate (9, 9′); c) coating (16) the top part of said substrate with an electrically insulating coating (30); d) directionally etching (18) said coating and said intermediate layer so as to limit the presence thereof exclusively at each vertical wall (51, 52) formed in said top layer; e) performing (5) an electrodeposition by connecting the electrode to the conductive bottom layer (23) of the substrate (9, 9′) to form at least one metal part (33, 43, 43′) of said component; f) releasing the composite component (41, 41′) from the substrate (9, 9′). The invention concerns the field of micromechanical components, particularly for timepiece movements.

Abstract translation: 本发明涉及一种制造复合微机械部件（41,41'）的方法（1），包括以下步骤：a）提供（10）包括水平顶层（21）的衬底（9,9'）和 由导电的可微加工材料制成并由电绝缘的水平中间层（22）彼此固定的水平底层（23）; b）将顶层（21）中的至少一个图案（26）蚀刻到中间层（22），以在衬底（9,9'）中形成至少一个空腔（25）; c）用电绝缘涂层（30）涂覆（16）所述基底的顶部; d）定向地蚀刻（18）所述涂层和所述中间层，以限制其在形成在所述顶层中的每个垂直壁（51,52）处的存在; e）通过将电极连接到基板（9,9'）的导电底层（23）上来执行（5）电沉积，以形成所述部件的至少一个金属部分（33,43,43'）; f）从所述基板（9,9'）释放所述复合部件（41,41'）。 本发明涉及微机械部件的领域，特别是用于钟表运动。

公开(公告)号：US07385209B2

公开(公告)日：2008-06-10

申请号：US11256213

申请日：2005-10-24

Applicant: Samuel Jaccard ,  Serguei Mikhailov ,  Frans Munnik

Inventor： Samuel Jaccard ,  Serguei Mikhailov ,  Frans Munnik

IPC: G01N23/00 ,  G21K7/00

CPC classification number: B81C1/00492 ,  B81C2201/032 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/201 ,  H01J37/3174 ,  H01J2237/31735 ,  H01J2237/31755 ,  H01J2237/31774 ,  H01J2237/31796 ,  Y10S430/143

Abstract: Ion beam lithography technique wherein a higher amount of radiation energy is deposited to predetermined regions in the bulk if a suitable substrate. By selecting the radiation nature, its energy and the irradiation parameters a structure can be created in the bulk of the material leaving the surface essentially untouched.

Abstract translation: 离子束光刻技术，其中如果合适的衬底，较高量的辐射能量沉积到本体中的预定区域。 通过选择辐射性质，其能量和照射参数，可以在离开表面基本上不变的材料的主体中产生结构。

公开(公告)号：US20080110856A1

公开(公告)日：2008-05-15

申请号：US11927287

申请日：2007-10-29

Applicant: Adam L. Cohen

Inventor： Adam L. Cohen

IPC: C23F1/00 ,  B23H3/00

CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

公开(公告)号：US20080099338A1

公开(公告)日：2008-05-01

申请号：US11927327

申请日：2007-10-29

Applicant: Adam Cohen

Inventor： Adam Cohen

IPC: C25D5/02

CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.