公开(公告)号：US20150165471A1

公开(公告)日：2015-06-18

申请号：US14570266

申请日：2014-12-15

申请人： Tokyo Electron Limited

发明人： Yoshihiro Kawaguchi ,  Satoshi Kaneko

IPC分类号： B05C11/10 ,  B05C3/00 ,  B05C3/02

CPC分类号： B05C11/1002 ,  B05C3/005 ,  B05C3/02 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1669 ,  C23C18/1675 ,  C23C18/168 ,  Y10T137/0318 ,  Y10T137/0329

摘要： A substrate processing apparatus includes one or more substrate processing units 11 to 18 each processing a substrate 3 with a processing fluid; processing fluid supply units 19 and 20 supplying the heated processing fluid to the substrate processing units 11 to 18; and a controller 21 controlling the processing fluid supply units 19 and 20. The processing fluid supply units 19 and 20 include a storage tank 35 storing the processing fluid; a heating heat exchanger 51 heating the processing fluid; and a supply path 52 supplying the processing fluid to the substrate processing units 11 to 18. The supply path 52 includes a bypass path 71 bypassing the heating heat exchanger 51 at an upstream of the substrate processing units 11 to 18. The processing fluid heated by the heating heat exchanger 51 and the processing fluid supplied from the bypass path 71 are mixed to be supplied.

摘要翻译： 基板处理装置包括：一个或多个基板处理单元11至18，每个基板处理单元用处理流体处理基板3; 将加热的处理流体供给到基板处理单元11至18的处理流体供应单元19和20; 以及控制处理流体供给单元19和20的控制器21.处理流体供应单元19和20包括存储处理流体的储存箱35; 加热热交换器51，加热处理流体; 以及将处理流体供给到基板处理单元11〜18的供给路径52.供给路径52包括在基板处理单元11〜18的上游旁通加热用热交换器51的旁路路径71.加热流体被加热 加热热交换器51和从旁路通路71供给的处理液被混合供给。

公开(公告)号：US20140312003A1

公开(公告)日：2014-10-23

申请号：US13971532

申请日：2013-08-20

申请人： International Business Machines Corporation

发明人： Hongbo Peng ,  Stephen M. Rossnagel ,  Ajay K. Royyuru ,  Gustavo A. Stolovitzky ,  Deqiang Wang

IPC分类号： C12Q1/68 ,  C25D7/12

CPC分类号： G01N33/48721 ,  C12Q1/6869 ,  C23C18/161 ,  C23C18/1644 ,  C23C18/1675 ,  C23C18/42 ,  C25D3/50 ,  C25D5/02 ,  C25D7/00 ,  C25D7/12 ,  C25D21/12

摘要： A mechanism is provided for forming a nanodevice. A reservoir is filled with a conductive fluid, and a membrane is formed to separate the reservoir in the nanodevice. The membrane includes an electrode layer having a tunneling junction formed therein. The membrane is formed to have a nanopore formed through one or more other layers of the membrane such that the nanopore is aligned with the tunneling junction of the electrode layer. The tunneling junction of the electrode layer is narrowed to a narrowed size by electroplating or electroless deposition. When a voltage is applied to the electrode layer, a tunneling current is generated by a base in the tunneling junction to be measured as a current signature for distinguishing the base. When an organic coating is formed on an inside surface of the tunneling junction, transient bonds are formed between the electrode layer and the base.

摘要翻译： 提供了用于形成纳米器件的机构。 储存器填充有导电流体，并且形成膜以分离纳米装置中的储存器。 膜包括其中形成有隧道结的电极层。 膜形成为具有通过膜的一个或多个其它层形成的纳米孔，使得纳米孔与电极层的隧道结对准。 电极层的隧道结通过电镀或无电沉积而变窄到窄的尺寸。 当向电极层施加电压时，通过在要测量的隧道结中的基底产生隧道电流作为区分基底的当前签名。 当在隧道结的内表面上形成有机涂层时，在电极层和基底之间形成瞬态结合。

公开(公告)号：US20140245954A1

公开(公告)日：2014-09-04

申请号：US14194514

申请日：2014-02-28

申请人： EBARA CORPORATION

发明人： Yoshio MINAMI ,  Ryuya KOIZUMI

IPC分类号： H01L21/02 ,  C25D17/00 ,  C23C18/16

CPC分类号： C25D17/001 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/1675 ,  C25D17/06 ,  C25D21/12 ,  H01L21/6723 ,  H01L21/67751 ,  H01L21/68721 ,  H01L24/743 ,  H01L24/83 ,  H01L2924/0002 ,  H01L2924/00

摘要： A plating apparatus is described. The apparatus includes: a substrate holder configured to hold a substrate in a vertical position; at least one processing bath configured to process the substrate held by the substrate holder, a transporter configured to grip and horizontally transport the substrate holder; at least one lifer configured to receive the substrate holder from the transporter, lower the substrate holder to place the substrate holder in the processing bath, elevate the substrate holder from the processing bath after processing of the substrate, and transfer the substrate holder to the transporter; and a controller configured to control operations of the transporter and the lifter.

摘要翻译： 描述电镀装置。 该设备包括：衬底保持器，其构造成将衬底保持在垂直位置; 至少一个处理槽，其被配置为处理由所述基板保持器保持的所述基板，构造成夹持并水平地传送所述基板保持器的输送器; 至少一个升降器，其构造成从所述运送器接收所述基板保持器，下降所述基板保持器以将所述基板保持器放置在所述处理槽中，在所述基板处理之后从所述处理槽升高所述基板保持器，并将所述基板保持器转移到所述运送器 ; 以及控制器，其被配置为控制所述运送器和所述升降器的操作。

公开(公告)号：US20090000549A1

公开(公告)日：2009-01-01

申请号：US12216147

申请日：2008-06-30

申请人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Akira Fukunaga

发明人： Xinming Wang ,  Daisuke Takagi ,  Akihiko Tashiro ,  Akira Fukunaga

IPC分类号： B05C11/00

CPC分类号： H01L21/76849 ,  C23C18/1608 ,  C23C18/1675 ,  C23C18/1692 ,  C23C18/1879 ,  H01L21/288 ,  H01L21/76864 ,  H01L21/76874 ,  H01L22/12 ,  H01L22/20 ,  H01L2223/54466

摘要： There is provided a substrate processing method and apparatus which can measure and monitor thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate having a metal and an insulating material exposed on its surface in such a manner that a film thickness of the metal, with an exposed surface of the metal as a reference plane, is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal during and/or immediately after processing, and monitoring processing and adjusting processing conditions based on results of this measurement.

摘要翻译： 提供了可以根据需要测量和监测在基板上形成的膜的厚度和/或性能的基板处理方法和装置，并且可以快速地校正工艺条件的偏差，因此可以稳定地提供恒定品质的产品。 一种基板处理方法，用于处理具有金属和绝缘材料的基板，所述基板以其金属的暴露表面作为基准面的方式选择性地或优先地改变的金属的膜厚度包括 测量处理期间和/或紧随其后的金属的膜厚度和/或膜性质的变化，以及基于该测量结果的监测处理和调整处理条件。

公开(公告)号：US20050088647A1

公开(公告)日：2005-04-28

申请号：US10944228

申请日：2004-09-17

申请人： Arulkumar Shanmugasundram ,  Manoocher Birang ,  Ian Pancham ,  Sergey Lopatin

发明人： Arulkumar Shanmugasundram ,  Manoocher Birang ,  Ian Pancham ,  Sergey Lopatin

IPC分类号： C23C18/16 ,  G01B11/06 ,  G01J3/28 ,  G01N21/84 ,  G01N21/95 ,  H01L21/66

CPC分类号： C23C18/1667 ,  C23C18/1651 ,  C23C18/1675 ,  G01B11/0683 ,  G01N21/8422 ,  G01N21/9501

摘要： An apparatus and a method of controlling an electroless deposition process by directing electromagnetic radiation towards the surface of a substrate and detecting the change in intensity of the electromagnetic radiation at one or more wavelengths reflected off features on the surface of the substrate. In one embodiment the detected end of an electroless deposition process step is measured while the substrate is moved relative to the detection mechanism. In another embodiment multiple detection points are used to monitor the state of the deposition process across the surface of the substrate. In one embodiment the detection mechanism is immersed in the electroless deposition fluid on the substrate. In one embodiment a controller is used to monitor, store, and/or control the electroless deposition process by use of stored process values, comparison of data collected at different times, and various calculated time dependent data.

摘要翻译： 通过将电磁辐射引导到衬底的表面并检测在基底表面上的特征反射的一个或多个波长处的电磁辐射的强度变化来控制无电沉积工艺的装置和方法。 在一个实施例中，在基板相对于检测机构移动时测量无电沉积工艺步骤的检测结束。 在另一个实施方案中，多个检测点用于监测穿过基底表面的沉积工艺的状态。 在一个实施例中，检测机构浸没在基板上的无电沉积流体中。 在一个实施例中，控制器用于通过使用存储的过程值，在不同时间收集的数据的比较以及各种计算的时间相关数据来监视，存储和/或控制无电沉积过程。

公开(公告)号：US06684172B1

公开(公告)日：2004-01-27

申请号：US10034165

申请日：2001-12-27

申请人： Ramkumar Subramanian ,  Steven C. Avanzino ,  Christopher F. Lyons ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Cyrus E. Tabery

发明人： Ramkumar Subramanian ,  Steven C. Avanzino ,  Christopher F. Lyons ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Cyrus E. Tabery

IPC分类号： G01L2500

CPC分类号： C23C16/52 ,  C23C14/547 ,  C23C18/1675 ,  C25D21/12 ,  H01L21/76877

摘要： One aspect of the invention relates to a metal fill process and systems therefor involving providing a standard calibration wafer having a plurality of fill features of known dimensions in a metalization tool; depositing a metal material over the standard calibration wafer; monitoring the deposition of metal material using a sensor system, the sensor system operable to measure one or more fill process parameters and to generate fill process data; controlling the deposition of metal material to minimize void formation using a control system wherein the control system receives fill process data from the sensor system and analyzes the fill process data to generate a feed-forward control data operative to control the metalization tool; and depositing metal material over a production wafer in the metalization tool using the fill process data generated by the sensor system and the control system. The invention further relates to tool characterization processes and systems therefor.

摘要翻译： 本发明的一个方面涉及一种金属填充方法及其系统，其涉及在金属化工具中提供具有已知尺寸的多个填充特征的标准校准晶片; 在标准校准晶片上沉积金属材料; 使用传感器系统监测金属材料的沉积，所述传感器系统可操作以测量一个或多个填充过程参数并产生填充过程数据; 控制金属材料的沉积以最小化使用控制系统的空隙形成，其中控制系统从传感器系统接收填充过程数据并分析填充过程数据以产生可操作以控制金属化工具的前馈控制数据; 以及使用由传感器系统和控制系统产生的填充过程数据在金属化工具中的生产晶片上沉积金属材料。 本发明还涉及其工具表征过程及其系统。

公开(公告)号：US5993892A

公开(公告)日：1999-11-30

申请号：US713265

申请日：1996-09-12

申请人： Arthur Wasserman ,  Richard Smith

发明人： Arthur Wasserman ,  Richard Smith

IPC分类号： C23C18/16 ,  B05D1/18 ,  B05D1/00

CPC分类号： C23C18/1617 ,  C23C18/1675

摘要： A sample coupon of known dimensions is immersed in the electroless plating bath. Immersion time can extend for the life of the bath. The coupon is attached to a load-cell which incorporates strain-gauge technology. The millivolt output of the load-cell to galvanometer displays weight gain at chosen intervals (e.g., 1 minute), and can signal operator if weight gain is less than the chart contained in engineering specifications to make replenishment additions defined in specification. The galvanometer output, with specialized software to computer traces weight gain profile providing data for actuating valves (e.g., proportionating pump) and provides hard-copy quality control record. Control of this one chemical replenishment parameter is sufficient to give real time process optimization and minimizes auto-catalytic breakdown. Instruments can be positioned in controlled environment.

摘要翻译： 将已知尺寸的样品试样浸入化学镀浴中。 浸泡时间可延长浴缸的使用寿命。 优惠券连接到采用应变计技术的负载电池。 负载单元到电流计的毫伏输出以选定的间隔（例如1分钟）显示重量增益，并且如果重量增益小于工程规范中包含的图表，则可以对操作者进行信号，以进行规格中定义的补充添加。 电流计输出，具有专门的软件，用于计算机跟踪加重曲线，为致动阀（例如配比泵）提供数据，并提供硬拷贝质量控制记录。 这一个化学补充参数的控制足以给出实时过程优化并使自动催化分解最小化。 仪器可以在受控环境中定位。

公开(公告)号：US4756923A

公开(公告)日：1988-07-12

申请号：US889661

申请日：1986-07-28

申请人： Melanie A. Day ,  Ronald A. Kaschak ,  Steven A. Schubert

发明人： Melanie A. Day ,  Ronald A. Kaschak ,  Steven A. Schubert

IPC分类号： C23C18/31 ,  C23C18/16 ,  C23C18/40 ,  H05K3/18 ,  C23C16/52

CPC分类号： C23C18/1675 ,  H05K3/187 ,  Y10S428/931 ,  Y10S428/936 ,  Y10T428/12458

摘要： Method and product resulting therefrom of controlling the residual resistivity of an electrolessly deposited metal by first, calculating the mathematical relationship between the residual resistivity of the deposited metal and its rate of deposition and second, depositing said metal at a rate to produce a predetermined residual resistivity.

摘要翻译： 由此产生的方法和产品首先控制无电沉积金属的残留电阻率，计算沉积金属的残余电阻率与其沉积速率之间的数学关系，其次，沉积所述金属以产生预定的残留电阻率 。

公开(公告)号：US4718990A

公开(公告)日：1988-01-12

申请号：US833198

申请日：1986-02-27

申请人： Shigeo Hashimoto ,  Yutaka Sugiura

发明人： Shigeo Hashimoto ,  Yutaka Sugiura

IPC分类号： C23C18/16 ,  H05K3/18 ,  G01N27/46 ,  B05D3/10

CPC分类号： C23C18/1675 ,  C23C18/1671 ,  H05K3/187

摘要： A method for detecting a start point of electroless plating, which comprises the steps of: immersing a couple of metal electrodes in an electroless plating solution; connecting the metal electrodes to a DC power supply to serve as an anode and a cathode, respectively; applying an electric current across the metal electrodes immediately before immersing an object to be electroless plated in the solution thereby causing metal deposition from the solution at the cathode to activate the same; measuring the potential difference between the activated cathode and the object to be plated; and detecting start of the electroless plating of the object from the measured value of the potential difference between the activated cathode and the object. Also disclosed is an apparatus for carrying out the method of the invention.

摘要翻译： 一种检测无电解电镀起点的方法，包括以下步骤：将一对金属电极浸入化学镀溶液中; 将金属电极分别连接到直流电源以用作阳极和阴极; 在将待无电镀的物体浸入溶液中之前，立即在金属电极上施加电流，从而使得从阴极处的溶液中的金属沉积起激活作用; 测量活化阴极与待镀物体之间的电位差; 以及根据活化的阴极和物体之间的电位差的测量值来检测物体的化学镀的开始。 还公开了一种用于实施本发明的方法的装置。

公开(公告)号：US11769686B2

公开(公告)日：2023-09-26

申请号：US16330365

申请日：2016-09-29

申请人： Intel Corporation

发明人： Harinath Reddy ,  Harsono S. Simka ,  Christopher D. Thomas

IPC分类号： B05B13/02 ,  B05B13/04 ,  H01L21/687 ,  C23C18/16 ,  H01L21/288 ,  H01L21/67

CPC分类号： H01L21/68764 ,  B05B13/02 ,  B05B13/0228 ,  B05B13/04 ,  C23C18/163 ,  C23C18/1642 ,  C23C18/1675 ,  H01L21/288 ,  H01L21/6715

摘要： A single-substrate electroless (EL) plating apparatus including a workpiece chuck that is rotatable about rotation axis and inclinable about an axis of inclination. The chuck inclination may be controlled to a non-zero inclination angle during a dispense of plating solution to improve uniformity in the surface wetting and/or plating solution residence time across the a surface of a workpiece supported by the chuck. The angle of inclination may be only a few degrees off-level with the plating solution dispensed from a nozzle that scans over a high-side of the chuck along a radius of the workpiece while the chuck rotates. The angle of inclination may be actively controlled during dispense of the plating solution. The inclination angle may be larger at commencement of the plating solution dispense than at cessation of the dispense.