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公开(公告)号：US20090167137A1
公开(公告)日：2009-07-02
申请号：US12288864
申请日：2008-10-23
Applicant: Peng Liu , Liang Liu , Kai-Li Jiang , Shou-Shan Fan
Inventor： Peng Liu , Liang Liu , Kai-Li Jiang , Shou-Shan Fan
CPC classification number: H01J1/14 , H01J9/04 , H01J31/127 , H01J2201/196
Abstract: A thermionic electron emission device includes an insulating substrate, and one or more grids located thereon. The one or more grids include(s) a first, second, third and fourth electrode down-leads located on the periphery thereof, and a thermionic electron emission unit therein. The first and second electrode down-leads are parallel to each other. The third and fourth electrode down-leads are parallel to each other. The first and second electrode down-leads are insulated from the third and fourth electrode down-leads. The thermionic electron emission unit includes a first electrode, a second electrode, and a thermionic electron emitter. The first electrode and the second electrode are separately located and electrically connected to the first electrode down-lead and the third electrode down-lead respectively. Wherein the thermionic electron emitter includes a carbon nanotube film structure.
Abstract translation: 热电子发射器件包括绝缘衬底和位于其上的一个或多个栅极。 一个或多个栅格包括位于其周边上的第一，第二，第三和第四电极引线以及其中的热电子发射单元。 第一和第二电极下引线彼此平行。 第三和第四电极下引线彼此平行。 第一和第二电极下引线与第三和第四电极下引线绝缘。 热电子发射单元包括第一电极，第二电极和热离子电子发射体。 第一电极和第二电极分别位于第一电极下引线和第三电极引线下电连接。 其中，热离子电子发射体包括碳纳米管膜结构。
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公开(公告)号：US20170213685A1
公开(公告)日：2017-07-27
申请号：US15233198
申请日：2016-08-10
Inventor： Jun Tae KANG , Yoon-Ho SONG , Jae-Woo KIM , Jin-Woo JEONG
IPC: H01J35/06
CPC classification number: H01J37/063 , H01J7/18 , H01J7/186 , H01J9/39 , H01J19/48 , H01J21/20 , H01J29/46 , H01J29/488 , H01J29/50 , H01J35/06 , H01J35/065 , H01J35/165 , H01J35/20 , H01J2201/196 , H01J2201/317 , H01J2209/385 , H01J2209/3893 , H01J2229/4827 , H01J2229/4831 , H01J2229/94 , H01J2235/068 , H01J2235/205 , H01J2237/032 , H01J2237/036 , H01J2237/06375 , H01J2237/1825
Abstract: Disclosed is an x-ray tube including a hybrid electron emission source, which uses, as an electron emission source, a cathode including both a field electron emission source and a thermal electron emission source. An x-ray tube includes an electron emission source emitting an electron beam, and a target part including a target material that emits an x-ray as the emitted electron beam collides with the target part, wherein the electron emission source includes a thermal electron emission source and a field electron emission source, and emits the electron beam by selectively using at least one of the thermal electron emission source and the field electron emission source.
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13.发明授权Electron beam control method, electron beam generating apparatus, apparatus using the same, and emitter 有权电子束控制方法，电子束发生装置，使用该装置的装置和发射极公开(公告)号：US09257257B2
公开(公告)日：2016-02-09
申请号：US12306635
申请日：2006-06-30
Applicant: Shin Fujita , Mohamed El-Gomati , Torquil Wells
Inventor： Shin Fujita , Mohamed El-Gomati , Torquil Wells
IPC: G01N23/00 , H01J37/065 , H01J35/06
CPC classification number: H01J37/065 , H01J35/06 , H01J2201/196 , H01J2237/06316 , H01J2237/3175
Abstract: Provided is a Schottky emitter having the conical end with a radius of curvature of 2.0 μm on the emission side of an electron beam. Since a radius of curvature is 1 μm or more, a focal length of an electron gun can be longer than in a conventional practice wherein a radius of curvature is in the range of from 0.5 μm to not more than 0.6 μm. The focal length was found to be roughly proportional to the radius of the curvature. Since the angular current intensity (the beam current per unit solid angle) is proportional to square of the electron gun focal length, the former can be improved by an order of magnitude within a practicable increase in the emitter radius. A higher angular current intensity means a larger beam current available from the electron gun and the invention enables the Schottky emitters to be used in applications which require relatively high beam current of microampere regime such as microfocus X-ray tube, electron probe micro-analyzer, and electron beam lithography system.
Abstract translation: 提供了一种在电子束的发射侧具有2.0μm的曲率半径的锥形端的肖特基发射体。 由于曲率半径为1μm以上，电子枪的焦距可以比曲率半径在0.5μm以上0.6μm以下的现有技术中长。 发现焦距与曲率半径成正比。 由于角电流强度（每单位立体角的射束电流）与电子枪焦距的平方成比例，所以前者可以在发射极半径的可行增加范围内提高一个数量级。 较高的角电流强度意味着可从电子枪获得的较大的束电流，并且本发明使肖特基发射体能够用于需要相对较高的微安电流束流的应用，如微焦X射线管，电子探针微量分析仪， 和电子束光刻系统。
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公开(公告)号：US08808554B2
公开(公告)日：2014-08-19
申请号：US13301658
申请日：2011-11-21
Applicant: Peng Liu , Liang Liu , Kai-Li Jiang , Shou-Shan Fan
Inventor： Peng Liu , Liang Liu , Kai-Li Jiang , Shou-Shan Fan
CPC classification number: H01J1/14 , H01J9/04 , H01J31/127 , H01J2201/196
Abstract: A method for making a thermionic electron emission device. The method includes the following steps. First, an insulating substrate is provided. Second, a number of lattices are formed on the insulating substrate. Third, a first electrode and a second electrode are fabricated in each lattice on the insulating substrate. Fourth, a carbon nanotube film structure is provided and at least part of the carbon nanotube film is suspended structure above the insulating substrate. Sixth, excess carbon nanotube film structure is cut away to obtain a number of thermionic electron emitters. The thermionic electron emitters are spaced from each other and located between the first electrode and the second electrode in each lattice.
Abstract translation: 一种制造热离子电子发射装置的方法。 该方法包括以下步骤。 首先，提供绝缘基板。 其次，在绝缘基板上形成多个格子。 第三，在绝缘基板上的每个格子中制造第一电极和第二电极。 第四，提供一种碳纳米管薄膜结构，并且至少部分碳纳米管薄膜在绝缘基板上方悬浮结构。 第六，切掉多余的碳纳米管薄膜结构以获得许多热离子电子发射体。 热电子发射体彼此间隔开，并位于第一电极和第二电极之间。
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公开(公告)号：US20120064794A1
公开(公告)日：2012-03-15
申请号：US13301658
申请日：2011-11-21
Applicant: PENG LIU , LIANG LIU , KAI-LI JIANG , SHOU-SHAN FAN
Inventor： PENG LIU , LIANG LIU , KAI-LI JIANG , SHOU-SHAN FAN
CPC classification number: H01J1/14 , H01J9/04 , H01J31/127 , H01J2201/196
Abstract: A method for making a thermionic electron emission device. The method includes the following steps. First, an insulating substrate is provided. Second, a number of lattices are formed on the insulating substrate. Third, a first electrode and a second electrode are fabricated in each lattice on the insulating substrate. Fourth, a carbon nanotube film structure is provided and at least part of the carbon nanotube film is suspended structure above the insulating substrate. Sixth, excess carbon nanotube film structure is cut away to obtain a number of thermionic electron emitters. The thermionic electron emitters are spaced from each other and located between the first electrode and the second electrode in each lattice.
Abstract translation: 一种制造热离子电子发射装置的方法。 该方法包括以下步骤。 首先，提供绝缘基板。 其次，在绝缘基板上形成多个格子。 第三，在绝缘基板上的每个格子中制造第一电极和第二电极。 第四，提供一种碳纳米管薄膜结构，并且至少部分碳纳米管薄膜在绝缘基板上方悬浮结构。 第六，切掉多余的碳纳米管薄膜结构以获得许多热离子电子发射体。 热电子发射体彼此间隔开，并位于第一电极和第二电极之间。
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Patent Agency Ranking
公开(公告)号：US20120062100A1
公开(公告)日：2012-03-15
申请号：US13301654
申请日：2011-11-21
Applicant: PENG LIU , LIANG LIU , KAI-LI JIANG , SHOU-SHAN FAN
Inventor： PENG LIU , LIANG LIU , KAI-LI JIANG , SHOU-SHAN FAN
CPC classification number: H01J1/14 , H01J9/04 , H01J31/127 , H01J2201/196
Abstract: A thermionic electron emission device includes an insulating substrate and one or more lattices located on the insulating substrate. Each lattice includes a first, second, third and fourth electrode down-leads located on the insulating substrate to define an area. A thermionic electron emission unit is located in the area. The thermionic electron emission unit includes a first electrode, a second electrode, and a thermionic electron emitter. The thermionic electron emitter includes a carbon nanotube film structure. The carbon nanotube film structure includes a carbon nanotube film. The carbon nanotube film includes a number of carbon nanotubes joined end to end along axial directions of the carbon nanotubes by contacting with each other directly.
Abstract translation: 热电子发射器件包括绝缘衬底和位于绝缘衬底上的一个或多个晶格。 每个晶格包括位于绝缘基板上的第一，第二，第三和第四电极下引线，以限定一个区域。 热电子发射单元位于该区域。 热电子发射单元包括第一电极，第二电极和热离子电子发射体。 热电子发射体包括碳纳米管膜结构。 碳纳米管膜结构包括碳纳米管膜。 碳纳米管膜包括通过直接彼此接触而沿着碳纳米管的轴向方向端对端地连接的多个碳纳米管。
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公开(公告)号：US07982382B2
公开(公告)日：2011-07-19
申请号：US12288862
申请日：2008-10-23
Applicant: Peng Liu , Liang Liu , Kai-Li Jiang , Shou-Shan Fan
Inventor： Peng Liu , Liang Liu , Kai-Li Jiang , Shou-Shan Fan
IPC: H01J63/04
CPC classification number: H01J1/14 , H01J31/127 , H01J2201/196
Abstract: A thermionic electron source includes a substrate, at least two electrodes, and a thermionic emitter. The electrodes are electrically connected to the thermionic emitter. The thermionic emitter has a film structure. Wherein there a space is defined between the thermionic emitter and the substrate.
Abstract translation: 热电子源包括衬底，至少两个电极和热离子发射器。 电极电连接到热离子发射器。 热离子发射器具有膜结构。 其中在热离子发射器和衬底之间有一个空间。
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公开(公告)号：US09734976B2
公开(公告)日：2017-08-15
申请号：US15214779
申请日：2016-07-20
Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
Inventor： Yang Wei , Shou-Shan Fan
CPC classification number: H01J1/14 , H01J1/3044 , H01J9/042 , H01J37/073 , H01J63/02 , H01J63/06 , H01J2201/196 , H01J2201/30411 , H01J2201/30469 , H01J2237/06316 , H01J2237/06333 , H01J2237/06341 , H01J2237/26 , H01J2237/28 , H01J2329/0455 , Y10T428/24132
Abstract: An array of carbon nanotube micro-tip structure includes an insulating substrate and a plurality of patterned carbon nanotube film structures. The insulating substrate includes a surface. The surface includes an edge. A plurality of patterned carbon nanotube film structures spaced from each other. Each of the plurality of patterned carbon nanotube film structures is partially arranged on the surface of the insulating substrate. Each of the plurality of patterned carbon nanotube film structures comprises two strip-shaped arms joined together forming a tip portion protruding and suspending from the edge of the surface of the insulating substrate. Each of the two strip-shaped arms comprises a plurality of carbon nanotubes parallel to the surface of the insulating substrate.
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19.发明授权Thermal-field type electron source composed of transition metal carbide material with artificial facet 有权由过渡金属碳化物材料与人造面组成的热场型电子源公开(公告)号：US09240301B1
公开(公告)日：2016-01-19
申请号：US13851732
申请日：2013-03-27
Applicant: Applied Physics Technologies, Inc.
Inventor： William A. Mackie , Gerald G. Magera
CPC classification number: H01J1/148 , H01J1/14 , H01J1/146 , H01J19/10 , H01J37/06 , H01J2201/196 , H01J2201/2889 , H01J2201/30484 , H01J2201/317 , H01J2237/06316
Abstract: An electron source is made from mixed-metal carbide materials of high refractory nature. Producing field-enhanced thermionic emission, i.e., thermal-field or extended Schottky emission, from these materials entails the use of a certain low work function crystallographic direction, such as, for example, (100), (210), and (310). These materials do not naturally facet because of their refractory nature. The disclosed electron source made from transition metal carbide material is especially useful when installed in a scanning electron microscope (SEM) performing advanced imaging applications that require a high brightness, high beam current source.
Abstract translation: 电子源由具有高耐火性质的混合金属碳化物材料制成。 从这些材料产生场强增强的热离子发射，即热场或延伸的肖特基发射需要使用某种低功函数的晶体学方向，例如（100），（210）和（310） 。 这些材料由于其耐火性质而不自然而然。 所披露的由过渡金属碳化物材料制成的电子源在安装在需要高亮度，远光束电流源的先进成像应用的扫描电子显微镜（SEM）中是特别有用的。
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20.发明申请公开(公告)号：US20130224429A1
公开(公告)日：2013-08-29
申请号：US13592751
申请日：2012-08-23
Applicant: YANG WEI , SHOU-SHAN FAN
Inventor： YANG WEI , SHOU-SHAN FAN
CPC classification number: H01J1/14 , H01J1/3044 , H01J9/042 , H01J37/073 , H01J63/02 , H01J63/06 , H01J2201/196 , H01J2201/30411 , H01J2201/30469 , H01J2237/06316 , H01J2237/06333 , H01J2237/06341 , H01J2237/26 , H01J2237/28 , H01J2329/0455 , Y10T428/24132
Abstract: A carbon nanotube micro-tip structure includes an insulating substrate and a patterned carbon nanotube film structure. The insulating substrate includes a surface. The surface includes an edge. The patterned carbon nanotube film structure is partially arranged on the surface of the insulating substrate. The patterned carbon nanotube film structure includes two strip-shaped arms joined at one end to form a tip portion protruded from the edge of the surface of the insulating substrate and suspended. Each of the two strip-shaped arms includes a plurality of carbon nanotubes parallel to the surface of the insulating substrate.
Abstract translation: 碳纳米管微尖端结构包括绝缘基板和图案化碳纳米管薄膜结构。 绝缘基板包括表面。 表面包括边缘。 图案化的碳纳米管膜结构部分地布置在绝缘基板的表面上。 图案化碳纳米管膜结构包括两端连接的带状臂，形成从绝缘基板的表面的边缘突出的顶端部分并悬挂。 两个条形臂中的每一个包括平行于绝缘基板的表面的多个碳纳米管。
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