Abstract:
The drawing apparatus of the present inventions includes a detector having a size for which the detector can simultaneously detect two adjacent charged particle beams among a plurality of charged particle beams, and configured to detect an intensity of a charged particle beam incident thereon. A controller is configured to perform a control of a position of the detector and a control of a blanking deflector array such that one of two adjacent charged particle beams is in a blanking state and the other is in a non-blanking state on the detector that is moved, and each of the plurality of charged particle beams becomes in a blanking state and a non-blanking state sequentially, to cause the detector to perform an output in parallel with the control, and to inspect a defect in each blanking deflector in the blanking deflector array based on the output.
Abstract:
In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.
Abstract:
A mass spectrometer capable of measuring under switching two ion sources at different pressure levels in which a sample gas separated by GC column is branched, and separately introduced to a first ion source (for example, APCI ion source) and a second ion source (for example, EI ion source) at a pressure level lower than that of the first ion source respectively. Preferably, the flow rate of the sample gas introduced to the APCI ion source is made more than the flow rate of the sample gas introduced to the EI ion source, so that the pressure for each of the ion sources can be maintained and analysis can be conducted by each ionization at a good balance in view of the sensitivity.
Abstract:
An electron beam apparatus includes: a cathode configured to emit electrons; an anode that is an electrode which forms an electric field such that an electron beam is formed by the electrons emitted from the cathode, and that is formed with a first hole through which the electron beam passes; an aperture member formed with an opening that shades a part of the electron beam which passes through the anode; and a convergence electrode that is an electrode which forms an electric field such that the electron beam which passes through the opening converges, and that is configured to include one single-hole electrode formed with a second hole through which the electron beam passes.
Abstract:
A multi charged particle beam writing apparatus includes a unit to calculate a predetermined function expression by a correction coefficient that corrects an open area of each opening for forming a beam group, wherein the predetermined function expression minimizes a sum of squared values of all the beam groups, where each of the squared values is calculated by squaring a difference between a current value measured of the beam group and a sum of products for the beam group, where each of the products is obtained by multiplying a corrected open area by the predetermined function expression; a unit to calculate the correction coefficient that corrects the open area by using the predetermined function expression and the current value of the beam, for each beam; and a unit to calculate a current density of each of the multiple beams by the predetermined function expression.
Abstract:
An ion source includes arc chamber housing defining an arc chamber. The arc chamber housing has an extraction plate in a fixed position, and the extraction plate defines a plurality of extraction apertures. The ion source also includes a shutter assembly positioned outside of the arc chamber proximate the extraction plate. The shutter assembly is configured to block at least a portion of one of the plurality of extraction apertures during one time interval. The ion source combined with relative movement of a workpiece to be treated with an ion beam extracted from the ion source enables a two dimensional ion implantation pattern to be formed on the workpiece using only one ion source.
Abstract:
In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.
Abstract:
A system for joining at least two beams of charged particles that includes directing a first beam along a first axis into a field. A second beam is directed along a second axis into the field. The first and second beams are turned, by interaction between the field and the first and second beams, into a third beam directed along a third axis.