Charged particle beam drawing apparatus and article manufacturing method using same
    11.
    发明授权
    Charged particle beam drawing apparatus and article manufacturing method using same 失效
    带电粒子束拉制装置及其制造方法

    公开(公告)号:US08384051B2

    公开(公告)日:2013-02-26

    申请号:US13300032

    申请日:2011-11-18

    Applicant: Kimitaka Ozawa

    Inventor: Kimitaka Ozawa

    Abstract: The drawing apparatus of the present inventions includes a detector having a size for which the detector can simultaneously detect two adjacent charged particle beams among a plurality of charged particle beams, and configured to detect an intensity of a charged particle beam incident thereon. A controller is configured to perform a control of a position of the detector and a control of a blanking deflector array such that one of two adjacent charged particle beams is in a blanking state and the other is in a non-blanking state on the detector that is moved, and each of the plurality of charged particle beams becomes in a blanking state and a non-blanking state sequentially, to cause the detector to perform an output in parallel with the control, and to inspect a defect in each blanking deflector in the blanking deflector array based on the output.

    Abstract translation: 本发明的绘图装置包括检测器,该检测器具有这样的尺寸,检测器可以同时检测多个带电粒子束中的两个相邻的带电粒子束,并且被配置为检测入射在其上的带电粒子束的强度。 控制器被配置为执行检测器的位置的控制和对消隐偏转器阵列的控制,使得两个相邻的带电粒子束中的一个处于消隐状态,另一个在检测器上处于非消隐状态, 多个带电粒子束中的每一个顺序地处于消隐状态和非消隐状态,以使检测器与控制并行地执行输出,并且检查在每个消隐偏转器中的缺陷 基于输出的消隐偏转器阵列。

    Mass spectrometer and mass spectrometry
    13.
    发明授权
    Mass spectrometer and mass spectrometry 有权
    质谱仪和质谱仪

    公开(公告)号:US07375316B2

    公开(公告)日:2008-05-20

    申请号:US11712922

    申请日:2007-03-02

    CPC classification number: H01J49/0422 H01J49/107

    Abstract: A mass spectrometer capable of measuring under switching two ion sources at different pressure levels in which a sample gas separated by GC column is branched, and separately introduced to a first ion source (for example, APCI ion source) and a second ion source (for example, EI ion source) at a pressure level lower than that of the first ion source respectively. Preferably, the flow rate of the sample gas introduced to the APCI ion source is made more than the flow rate of the sample gas introduced to the EI ion source, so that the pressure for each of the ion sources can be maintained and analysis can be conducted by each ionization at a good balance in view of the sensitivity.

    Abstract translation: 一种能够在不同压力水平下切换两个离子源的质谱仪,其中由GC柱分离的样品气体被分支,并分别引入第一离子源(例如APCI离子源)和第二离子源(用于 例如,EI离子源),其压力水平分别低于第一离子源的压力水平。 优选地,引入到APCI离子源的样品气体的流量比引入到EI离子源的样品气体的流量更多,从而可以保持每个离子源的压力并且可以分析 鉴于敏感性,通过各种电离进行良好的平衡。

    ELECTRON BEAM APPARATUS, AND X-RAY GENERATION APPARATUS AND SCANNING ELECTRON MICROSCOPE EACH INCLUDING THE SAME

    公开(公告)号:US20180366294A1

    公开(公告)日:2018-12-20

    申请号:US15919561

    申请日:2018-03-13

    Inventor: Akihiro MIYAOKA

    Abstract: An electron beam apparatus includes: a cathode configured to emit electrons; an anode that is an electrode which forms an electric field such that an electron beam is formed by the electrons emitted from the cathode, and that is formed with a first hole through which the electron beam passes; an aperture member formed with an opening that shades a part of the electron beam which passes through the anode; and a convergence electrode that is an electrode which forms an electric field such that the electron beam which passes through the opening converges, and that is configured to include one single-hole electrode formed with a second hole through which the electron beam passes.

    Multi charged particle beam writing apparatus and multi charged particle beam writing method
    15.
    发明授权
    Multi charged particle beam writing apparatus and multi charged particle beam writing method 有权
    多带电粒子束写入装置和多带电粒子束写入方法

    公开(公告)号:US09159555B2

    公开(公告)日:2015-10-13

    申请号:US13798669

    申请日:2013-03-13

    Abstract: A multi charged particle beam writing apparatus includes a unit to calculate a predetermined function expression by a correction coefficient that corrects an open area of each opening for forming a beam group, wherein the predetermined function expression minimizes a sum of squared values of all the beam groups, where each of the squared values is calculated by squaring a difference between a current value measured of the beam group and a sum of products for the beam group, where each of the products is obtained by multiplying a corrected open area by the predetermined function expression; a unit to calculate the correction coefficient that corrects the open area by using the predetermined function expression and the current value of the beam, for each beam; and a unit to calculate a current density of each of the multiple beams by the predetermined function expression.

    Abstract translation: 多带电粒子束写入装置包括:通过校正用于形成光束组的每个开口的开放区域的校正系数来计算预定函数表达式的单元,其中,所述预定函数表达式将所有波束组的平方值的和最小化 其中每个平方值通过平方光束组的测量的当前值与波束组的乘积之和之间的差值来计算,其中每个乘积通过将校正的开放面积乘以预定函数表达式而获得 ; 对于每个光束,计算通过使用预定函数表达式和光束的当前值来校正开放区域的校正系数的单元; 以及通过预定函数表达式计算多个光束中的每一个的电流密度的单元。

    Ion source having a shutter assembly
    16.
    发明授权
    Ion source having a shutter assembly 有权
    具有快门组件的离子源

    公开(公告)号:US08497486B1

    公开(公告)日:2013-07-30

    申请号:US13651685

    申请日:2012-10-15

    Abstract: An ion source includes arc chamber housing defining an arc chamber. The arc chamber housing has an extraction plate in a fixed position, and the extraction plate defines a plurality of extraction apertures. The ion source also includes a shutter assembly positioned outside of the arc chamber proximate the extraction plate. The shutter assembly is configured to block at least a portion of one of the plurality of extraction apertures during one time interval. The ion source combined with relative movement of a workpiece to be treated with an ion beam extracted from the ion source enables a two dimensional ion implantation pattern to be formed on the workpiece using only one ion source.

    Abstract translation: 离子源包括限定电弧室的电弧室壳体。 电弧室壳体具有固定位置的提取板,并且提取板限定多个提取孔。 离子源还包括位于靠近提取板的弧形室外部的快门组件。 快门组件构造成在一个时间间隔期间阻挡多个提取孔中的一个的至少一部分。 离子源与从离子源提取的离子束相关的待处理工件的相对移动结合使得仅使用一个离子源就能在工件上形成二维离子注入图案。

Patent Agency Ranking