Abstract:
An apparatus and method is provided for forming a board-on-chip (BOC) package. An adhesive material including a carrier and microcapsules distributed in the carrier is used to bond a semiconductor component to a mounting surface in a BOC package. The microcapsules contain a hardener and/or a catalyst that, when combined with the carrier, initiate a bonding reaction. The contents of the microcapsules are released via application of an external influence, such as pressure or heat, when the bonding reaction is desired to begin. The use of microcapsules permits the formulation of adhesive blends with a substantially increased pot life, increased stability and reliability at high temperatures, and favorable low temperature reaction and bonding characteristics.
Abstract:
A high-resolution pressure-sensing device is disclosed. The device includes an insulating flexible matrix having a plurality of filler particles. Application of a force to the matrix causes compression of the matrix. This results in the filler particles occupying a greater amount of space within the matrix relative to when no force is applied. A detector attached to the matrix detects or measures the volume of the filler particles relative to the volume of the matrix, and therefore determines the force applied to the matrix. Preferably, the resistivity of the matrix is inversely proportional to the volume percent of the filler particles, in which case the detector is a resistance-measuring circuit.
Abstract:
A center bond flip-chip device carrier and a method for making and using it are described. The carrier includes a flexible substrate supporting a layer of conductive material and a layer of elastomeric material. At least one pocket is formed in the layer of elastomeric material and sized and shaped to house a solder ball. The solder ball is electrically connected to a die positioned on the layer of elastomeric material and also electrically connected to the layer of conductive material.
Abstract:
A method of packaging semiconductor devices is described. In one embodiment, the method comprises providing a section of wafer mount tape, applying an adhesive layer to the wafer mount tape, stretching the wafer mount tape and the adhesive layer, attaching a wafer to the stretched adhesive layer, cutting the wafer and the adhesive layer, the wafer being cut into a plurality of die, and curing the wafer mount tape. In further embodiments, the method comprises removing at least one of the plurality of die from the wafer mount tape, the removed die having a portion of the adhesive layer coupled thereto, providing a die having a plurality of wire bonds coupled thereto, and coupling the adhesive layer on the removed die to the die having the wire bonds coupled thereto. In another aspect, the present invention is directed to a plurality of stacked semiconductor devices that comprise a first die, the first die having an upper surface, a second die positioned above the first die, the second die having a bottom surface, and an adhesive layer positioned between and coupled to each of the first die and the second die, the adhesive layer comprised of first and second surfaces, the first surface of the adhesive layer being coupled to the bottom surface of the second die thereby defining a first contact area, the second surface of the adhesive layer being coupled to the upper surface of the first die thereby defining a second contact area, the second contact area being less than the first contact area.
Abstract:
A method of forming high definition elements for electrical and electronic devices, substrates, and other components from or including viscous material. The method includes inverting the electrical components after the viscous material is applied and maintaining the inverted orientation until the viscous material dries or cures enough to maintain definition of its perimeter and edge characteristics.
Abstract:
A multi-layered metal bond pad for a semiconductor die having a conductive metal layer and an overlying ruthenium electrode layer. The ruthenium electrode layer protects the conductive metal from oxidation due to ambient environmental conditions. An interconnect structure such as a wire bond or solder ball may be attached to the ruthenium layer to connect the semiconductor die to a lead frame or circuit support structure. Also disclosed are processes for forming the ruthenium layer.
Abstract:
A quad in-line memory module (QIMM) includes a circuit board having top and bottom edge connectors and a number of memory devices mounted on each side of the circuit board. Generally, half of the memory devices are electrically connected to the bottom edge's connector and half are electrically connected to the bottom edge's connector. One edge of the QIMM can be connect directly to a computer system's memory bus. The other edge can be connected to operated as a cache memory or a video memory.
Abstract:
The present invention is directed toward an apparatus and method of reinforcement of lead bonding in microelectronics packages. In one embodiment, a microelectronics package includes a microelectronics device having a bond pad, a conductive lead having a first end bonded to the bond pad to form a lead bond, an encapsulating material at least partially disposed about the conductive lead, and a reinforcement portion at least partially disposed about the lead bond and at least partially coupling the first end to the bond pad. The reinforcement portion has a greater modulus of elasticity and/or a greater bond strength than the encapsulating material. During thermal cycling of the microelectronics package, bond liftoff due to CTE mismatch is prevented by the reinforcement portion The reinforcement portion may include a non-conductive adhesive material that physically secures the conductive lead to the bond pad, or alternately, an electrically conductive adhesive material that both physically and/or electrically couples the conductive lead to the bond pad. In an alternate embodiment, a microelectronics package includes a microelectronics device, an interposer, a plurality of conductive leads and a plurality of bond pads, and the reinforcement portion is disposed about a plurality of lead bonds. In this embodiment, the reinforcement portion may include a non-conductive adhesive material, or an anisotropically conductive material.
Abstract:
A center bond flip-chip device carrier and a method for making and using it are described. The carrier includes a flexible substrate supporting a layer of conductive material and a layer of elastomeric material. At least one pocket is formed in the layer of elastomeric material and sized and shaped to house a solder ball. The solder ball is electrically connected to a die positioned on the layer of elastomeric material and also electrically connected to the layer of conductive material.
Abstract:
The present invention includes electrical interconnections, methods of conducting electricity, and methods of reducing horizontal conductivity within an anisotropic conductive adhesive. In one embodiment, an electrical interconnection configured to electrically couple a first substrate and a second substrate includes: a bond pad of the first substrate having a male configuration; and a bond pad of the second substrate having a female configuration, the bond pad of the second substrate being configured to mate with the bond pad of the first substrate during electrical connection of the bond pads of the first substrate and the second substrate. A method of conducting electricity according to the present invention includes providing first and second bond pads individually defining a planar dimension; coupling the first and second bond pads at an interface having a surface area greater than the area of the planar dimension; and conducting electricity between the first and second bond pads following the coupling.