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公开(公告)号：US09391564B2
公开(公告)日：2016-07-12
申请号：US14103089
申请日：2013-12-11
Applicant: RF Micro Devices, Inc.
Inventor： Hamhee Jeon , Kevin Wesley Kobayashi
Abstract: Radio frequency (RF) amplification devices are disclosed that include Doherty amplification circuits and control circuits along with methods of operating the same. In one embodiment, the Doherty amplification circuit includes a quadrature coupler having an isolation port and a tunable impedance load coupled to the isolation port and configured to provide a tunable impedance. The control circuit is configured to tune the tunable impedance of the tunable impedance load at the isolation port dynamically as a function of the RF power of the Doherty amplification circuit. In this manner, the control circuit can provide dynamic load modulation, thereby increasing the power efficiency of the Doherty amplification circuit, particularly at backed-off power levels. The load modulation provided by the control circuit also allows the Doherty amplification circuit to provide broadband amplification in various RF communication bands.
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公开(公告)号：US20160191014A1
公开(公告)日：2016-06-30
申请号：US14757651
申请日：2015-12-23
Applicant: RF Micro Devices, Inc.
Inventor： Nadim Khlat , Jean-Frederic Chiron , Marcus Granger-Jones , Andrew F. Folkmann , Robert Aigner
CPC classification number: H03H9/542 , H01Q1/50 , H03H9/568 , H03H9/605 , H03H9/64 , H03H9/6483 , H04B1/04 , H04B1/10 , H04B1/16
Abstract: RF circuitry, which includes a first acoustic RF resonator (ARFR) and a first compensating ARFR, is disclosed. A first inductive element is coupled between the first compensating ARFR and a first end of the first ARFR. A second inductive element is coupled between the first compensating ARFR and a second end of the first ARFR. The first compensating ARFR, the first inductive element, and the second inductive element at least partially compensate for a parallel capacitance of the first ARFR.
Abstract translation: 公开了包括第一声RF谐振器（ARFR）和第一补偿ARFR的RF电路。 第一电感元件耦合在第一补偿ARFR和第一ARFR的第一端之间。 第二电感元件耦合在第一补偿ARFR和第一ARFR的第二端之间。 第一补偿ARFR，第一电感元件和第二电感元件至少部分地补偿第一ARFR的并联电容。
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公开(公告)号：US09379667B2
公开(公告)日：2016-06-28
申请号：US14072225
申请日：2013-11-05
Applicant: RF Micro Devices, Inc.
Inventor： Nadim Khlat , Michael R. Kay , Philippe Gorisse
CPC classification number: H03F1/02 , H02M3/07 , H02M3/158 , H03F1/0227 , H03F3/189 , H03F3/24 , H03F2200/432 , H03G3/3042
Abstract: A switch mode power supply converter and a parallel amplifier are disclosed. The switch mode power supply converter is coupled to a modulated power supply output and the parallel amplifier has a parallel amplifier output coupled to the modulated power supply output. Further, the parallel amplifier has a group of output stages, such that each output stage is directly coupled to the parallel amplifier output and each output stage receives a separate supply voltage.
Abstract translation: 公开了一种开关电源转换器和并联放大器。 开关模式电源转换器耦合到调制电源输出，并联放大器具有耦合到调制电源输出的并行放大器输出。 此外，并联放大器具有一组输出级，使得每个输出级直接耦合到并行放大器输出，并且每个输出级接收单独的电源电压。
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公开(公告)号：US09379604B2
公开(公告)日：2016-06-28
申请号：US13946340
申请日：2013-07-19
Applicant: RF Micro Devices, Inc.
Inventor： Jinhua Zhong , Daniel Charles Kerr , Kelvin Kai Tuan Yan , Brian Keith White
CPC classification number: H02M3/07 , H02M2001/0032 , Y02B70/16
Abstract: Radio frequency (RF) switching circuitry includes support circuitry for maintaining one or more RF switching elements in either an ON or OFF state. The support circuitry includes a negative charge pump adapted to quickly generate a negative voltage during a “boost” mode of operation, and maintain the negative voltage during a normal mode of operation. The negative charge pump includes an oscillator adapted to generate a high frequency oscillating signal for driving the charge pump during the boost mode of operation and a low frequency oscillating signal for driving the charge pump during the normal mode of operation. By generating the high frequency oscillating signal only during a boost mode of operation, spurious noise coupled to the RF switch circuitry is minimized during a normal mode of operation.
Abstract translation: 射频（RF）切换电路包括用于将一个或多个RF开关元件维持在ON或OFF状态的支持电路。 支持电路包括负电荷泵，其适于在“升压”操作模式期间快速产生负电压，并且在正常工作模式期间保持负电压。 负电荷泵包括适于在升压操作期间产生用于驱动电荷泵的高频振荡信号的振荡器和用于在正常操作模式期间驱动电荷泵的低频振荡信号。 通过仅在升压操作模式期间产生高频振荡信号，耦合到RF开关电路的杂散噪声在正常操作模式期间被最小化。
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公开(公告)号：US20160182008A1
公开(公告)日：2016-06-23
申请号：US14972929
申请日：2015-12-17
Applicant: RF Micro Devices, Inc.
Inventor： Kushal Bhattacharjee
IPC: H03H9/02 , H01L41/312 , H03H3/02
CPC classification number: H03H9/02244 , H01L41/047 , H01L41/312 , H01L41/33 , H03H3/02 , H03H9/02228 , H03H9/02275 , H03H9/02574 , H03H9/25 , H03H2003/027
Abstract: A micro-electrical-mechanical system (MEMS) guided wave device includes a piezoelectric layer including multiple thinned regions of different thicknesses each bounding in part a different recess, different groups of electrodes on or adjacent to different thinned regions and arranged for transduction of lateral acoustic waves of different wavelengths in the different thinned regions, and at least one bonded interface between the piezoelectric layer and a substrate. Optionally, a buffer layer may be intermediately bonded between the piezoelectric layer and the substrate. Methods of producing such devices include locally thinning a piezoelectric layer to define multiple recesses, bonding the piezoelectric layer on or over a substrate layer to cause the recesses to be bounded in part by either the substrate or an optional buffer layer, and defining multiple groups of electrodes on or over the different thinned regions.
Abstract translation: 微电机械系统（MEMS）导波器件包括压电层，其包括多个不同厚度的薄化区域，每个部分具有不同的凹槽，不同的电极组在不同的稀薄区域上或邻近于不同的薄化区域并且被布置用于横向声学 在不同的薄化区域中的不同波长的波以及压电层和基底之间的至少一个键合界面。 可选地，可以在压电层和基板之间中间粘结缓冲层。 制造这种装置的方法包括局部减薄压电层以限定多个凹陷，将压电层粘合在基底层上或上方，以使凹陷部分地由衬底或任选的缓冲层界定，并且限定多组 在不同稀疏区域上或上方的电极。
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Patent Agency Ranking
公开(公告)号：US09369095B2
公开(公告)日：2016-06-14
申请号：US14606375
申请日：2015-01-27
Applicant: RF Micro Devices, Inc.
Inventor： Kevin Wesley Kobayashi
CPC classification number: H03F1/56 , H03F1/0261 , H03F1/32 , H03F1/565 , H03F3/602 , H03F2200/192 , H03F2200/198 , H03F2200/204 , H03F2201/3215
Abstract: An unbalanced linear power amplifier (PA) is disclosed having a quadrature coupler with a 90° phase input port, a 0° phase input port, an output termination port, and a signal output port. Each of the 90° phase input port, the 0° phase input port, the output termination port, and the signal output port have a characteristic resistance (Ro). Also included is a first PA having an output coupled to a 90° phase input port of the quadrature coupler and a second PA having an output coupled to a 0° phase input port of the quadrature coupler. Biasing circuitry provides the first PA and the second PA with a similar gain. A tuning network is coupled between the output termination port and ground. The tuning network has an isolation resistance in series with an isolation inductance, wherein the isolation resistance is between about 0.02*Ro Ω and 0.8*Ro Ω.
Abstract translation: 公开了一种具有90°相位输入端口，0°相位输入端口，输出端接端口和信号输出端口的正交耦合器的不平衡线性功率放大器（PA）。 90°相位输入端口，0°相位输入端口，输出端接端口和信号输出端口均具有特性电阻（Ro）。 还包括具有耦合到正交耦合器的90°相位输入端口的输出的第一PA和具有耦合到正交耦合器的0°相位输入端口的输出的第二PA。 偏置电路为第一个PA和第二个PA提供了类似的增益。 调谐网络耦合在输出终端端口和地之间。 调谐网络具有与隔离电感串联的隔离电阻，其中隔离电阻介于约0.02 * Ro＆OHgr之间; 和0.8 * Ro＆OHgr;
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公开(公告)号：US20160126607A1
公开(公告)日：2016-05-05
申请号：US14930937
申请日：2015-11-03
Applicant: RF Micro Devices, Inc.
Inventor： Dirk Robert Walter Leipold , George Maxim , Marcus Granger-Jones , Baker Scott
IPC: H01P9/00
CPC classification number: H01P1/20381 , H01P5/028 , H01P9/006 , H05K1/00 , H05K1/0219 , H05K1/0239 , H05K1/0298 , H05K3/4611 , H05K2201/097
Abstract: The present disclosure relates to a tunable slow-wave transmission line. The tunable slow-wave transmission line is formed in a multi-layer substrate and includes an undulating signal path. The undulating signal path includes at least two loop structures, wherein each loop structure includes at least two via structures connected by at least one intra-loop trace. The undulating signal path further includes at least one inter-loop trace connecting the at least two loop structures. The tunable slow-wave transmission line includes a first ground structure disposed along the undulating signal path. Further, the tunable slow-wave transmission line includes one or more circuits that may alter a signal transmitted in the tunable slow-wave transmission line so as to tune a frequency of the signal.
Abstract translation: 本公开涉及可调节慢波传输线。 可调节慢波传输线形成在多层基板中，并且包括起伏的信号路径。 起伏信号路径包括至少两个环路结构，其中每个环路结构包括通过至少一个环路内线路连接的至少两个通孔结构。 起伏信号路径还包括连接至少两个环路结构的至少一个环路间迹线。 可调谐慢波传输线包括沿着起伏信号路径设置的第一接地结构。 此外，可调谐慢波传输线包括一个或多个电路，其可以改变在可调节慢波传输线中传输的信号，以调谐信号的频率。
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208.发明申请公开(公告)号：US20160126196A1
公开(公告)日：2016-05-05
申请号：US14885202
申请日：2015-10-16
Applicant: RF Micro Devices, Inc.
Inventor： Dirk Robert Walter Leipold , Julio C. Costa , Baker Scott , George Maxim
CPC classification number: H01L23/315 , H01L21/02266 , H01L21/02282 , H01L21/304 , H01L21/30604 , H01L21/565 , H01L21/6835 , H01L23/20 , H01L23/291 , H01L23/293 , H01L23/3121 , H01L23/3135 , H01L23/36 , H01L23/367 , H01L23/3731 , H01L23/3737 , H01L23/5223 , H01L23/5227 , H01L23/5228 , H01L23/562 , H01L24/17 , H01L28/10 , H01L28/20 , H01L28/40 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/131 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/92125 , H01L2924/0002 , H01L2924/19011 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01Q1/50 , H05K1/0203 , H05K1/181 , H01L2924/00 , H01L2924/014 , H01L2924/00014
Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.
Abstract translation: 公开了一种具有代替低电阻手柄层的保护层的印刷电路模块及其制造方法。 印刷电路模块包括具有附接到印刷电路基板的薄化管芯的印刷电路基板。 薄化的管芯包括印刷电路衬底上的至少一个器件层和至少一个器件层内的至少一个深阱。 保护层设置在至少一个深孔的上方，其中保护层具有大于2瓦/米开尔文（W / mK）的热导率和大于106欧姆 - 厘米的电阻率。
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209.发明申请METHODS OF MANUFACTURING A PRINTED CIRCUIT MODULE HAVING A SEMICONDUCTOR DEVICE WITH A PROTECTIVE LAYER IN PLACE OF A LOW-RESISTIVITY HANDLE LAYER 有权制造具有保护层的半导体器件的印刷电路模块在低电阻手柄层的位置的方法公开(公告)号：US20160126111A1
公开(公告)日：2016-05-05
申请号：US14885243
申请日：2015-10-16
Applicant: RF Micro Devices, Inc.
Inventor： Dirk Robert Walter Leipold , George Maxim , Julio C. Costa , Baker Scott
IPC: H01L21/56 , H01L23/20 , H01L21/02 , H01L21/683 , H01L21/306 , H01L21/304
CPC classification number: H01L23/315 , H01L21/02266 , H01L21/02282 , H01L21/304 , H01L21/30604 , H01L21/565 , H01L21/6835 , H01L23/20 , H01L23/291 , H01L23/293 , H01L23/3121 , H01L23/3135 , H01L23/36 , H01L23/367 , H01L23/3731 , H01L23/3737 , H01L23/5223 , H01L23/5227 , H01L23/5228 , H01L23/562 , H01L24/17 , H01L28/10 , H01L28/20 , H01L28/40 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/131 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/92125 , H01L2924/0002 , H01L2924/19011 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01Q1/50 , H05K1/0203 , H05K1/181 , H01L2924/00 , H01L2924/014 , H01L2924/00014
Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 103 Ohm-cm.
Abstract translation: 公开了一种具有代替低电阻手柄层的保护层的印刷电路模块及其制造方法。 印刷电路模块包括具有附接到印刷电路基板的薄化管芯的印刷电路基板。 薄化的管芯包括印刷电路衬底上的至少一个器件层和至少一个器件层内的至少一个深阱。 保护层设置在至少一个深孔的上方，其中保护层具有大于2瓦/米开尔文（W / mK）的热导率和大于103欧姆 - 厘米的电阻率。
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公开(公告)号：US20160087483A1
公开(公告)日：2016-03-24
申请号：US14851642
申请日：2015-09-11
Applicant: RF Micro Devices, Inc.
Inventor： Alexander Wayne Hietala , Nadim Khlat
Abstract: Antenna array calibration for wireless charging is disclosed. A wireless charging system is provided and configured to calibrate antenna elements in a wireless charging station based on a feedback signal provided by a wireless charging device. The antenna elements in the wireless charging station transmit wireless radio frequency (RF) charging signals to the wireless charging device. The wireless charging device provides the feedback signal to the wireless charging station to indicate total RF power in the wireless RF charging signals. The wireless charging station is configured to adjust transmitter phases associated with the antenna elements based on the feedback signal until the total RF power in the wireless RF charging signals is maximized. By calibrating the antenna elements based on the feedback signal, it is possible to achieve phase coherency among the antenna elements without requiring factory calibration.
Abstract translation: 公开了用于无线充电的天线阵列校准。 提供无线充电系统并配置为基于由无线充电装置提供的反馈信号来校准无线充电站中的天线元件。 无线充电站中的天线元件向无线充电装置发送无线射频（RF）充电信号。 无线充电装置向无线充电站提供反馈信号以指示无线RF充电信号中的总RF功率。 无线充电站被配置为基于反馈信号调整与天线元件相关联的发射机相位，直到无线RF充电信号中的总RF功率最大化为止。 通过基于反馈信号校准天线元件，可以在不需要工厂校准的情况下实现天线元件之间的相位一致性。
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