Semiconductor device with junction field-effect transistor and manufacturing method of the same
    221.
    发明授权
    Semiconductor device with junction field-effect transistor and manufacturing method of the same 有权
    具有结型场效应晶体管的半导体器件及其制造方法

    公开(公告)号:US08519452B2

    公开(公告)日:2013-08-27

    申请号:US13248173

    申请日:2011-09-29

    Abstract: A semiconductor device with a JFET is disclosed. The semiconductor device includes a trench and a contact embedded layer formed in the trench. A gate wire is connected to the contact embedded layer, so that the gate wire is connected to an embedded gate layer via the contact embedded layer. In this configuration, it is possible to downsize a contact structure between the embedded gate layer and the gate wire.

    Abstract translation: 公开了一种具有JFET的半导体器件。 半导体器件包括形成在沟槽中的沟槽和接触嵌入层。 栅极线连接到触点嵌入层,使得栅极线经由接触嵌入层连接到嵌入式栅极层。 在这种结构中,可以减小嵌入式栅极层与栅极线之间的接触结构。

    Prepolymer systems having reduced monomeric isocyanate contents
    223.
    发明授权
    Prepolymer systems having reduced monomeric isocyanate contents 有权
    具有降低的单体异氰酸酯含量的预聚物体系

    公开(公告)号:US08455679B2

    公开(公告)日:2013-06-04

    申请号:US12334398

    申请日:2008-12-12

    Abstract: A prepolymer system has a monomeric isocyanate content of no greater than about 10% by weight based on 100 parts by weight of the prepolymer system. The prepolymer system comprises a diluent component and a prepolymer component different than and separate from the diluent component. The diluent component has an excess of isocyanate (NCO) functional groups, and comprises the reaction product of a monohydric isocyanate-reactive component and an excess of a first isocyanate component. The first isocyanate component comprises monomeric isocyanates reactive with the monohydric isocyanate-reactive component. The prepolymer component also has an excess of NCO functional groups, and comprises the reaction product of a polyol component and an excess of a second isocyanate component. The prepolymer system can be used to prepare foams via reaction with water. The foams have low density and have excellent adhesion and sound dampening properties for use in cavities of automobile bodies.

    Abstract translation: 基于100重量份的预聚物体系,预聚物体系具有不大于约10重量%的单体异氰酸酯含量。 预聚物体系包含稀释剂组分和不同于稀释剂组分的预聚物组分。 稀释剂组分具有过量的异氰酸酯(NCO)官能团,并且包含一元异氰酸酯反应性组分和过量的第一异氰酸酯组分的反应产物。 第一异氰酸酯组分包含与一元异氰酸酯反应性组分反应的单体异氰酸酯。 预聚物组分也具有过量的NCO官能团,并且包含多元醇组分和过量的第二异氰酸酯组分的反应产物。 预聚物体系可用于通过与水反应来制备泡沫。 泡沫具有低密度,并且具有优异的粘附性和阻尼性,用于汽车车身的腔体。

    Wide band gap semiconductor device including junction field effect transistor
    227.
    发明授权
    Wide band gap semiconductor device including junction field effect transistor 有权
    宽带隙半导体器件包括结场效应晶体管

    公开(公告)号:US08274086B2

    公开(公告)日:2012-09-25

    申请号:US12458968

    申请日:2009-07-28

    Abstract: A wide band gap semiconductor device has a transistor cell region, a diode forming region, an electric field relaxation region located between the transistor cell region and the diode forming region, and an outer peripheral region surrounding the transistor cell region and the diode forming region. In the transistor cell region, a junction field effect transistor is disposed. In the diode forming region, a diode is disposed. In the electric field relaxation region, an isolating part is provided. The isolating part includes a trench dividing the transistor cell region and the diode forming region, a first conductivity-type layer disposed on an inner wall of the trench, and a second conductivity-type layer disposed on a surface of the first conductivity-type layer so as to fill the trench. The first conductivity-type layer and the second conductivity-type layer provide a PN junction.

    Abstract translation: 宽带隙半导体器件具有晶体管单元区域,二极管形成区域,位于晶体管单元区域和二极管形成区域之间的电场弛豫区域以及围绕晶体管单元区域和二极管形成区域的外围区域。 在晶体管单元区域中,设置结型场效应晶体管。 在二极管形成区域中,设置二极管。 在电场弛豫区域中,设置隔离部。 隔离部分包括分隔晶体管单元区域和二极管形成区域的沟槽,设置在沟槽的内壁上的第一导电类型层和设置在第一导电类型层的表面上的第二导电类型层 以填补沟槽。 第一导电型层和第二导电型层提供PN结。

    Detecting and isolating domain specific faults
    229.
    发明授权
    Detecting and isolating domain specific faults 有权
    检测和隔离域特定故障

    公开(公告)号:US08248953B2

    公开(公告)日:2012-08-21

    申请号:US11782906

    申请日:2007-07-25

    CPC classification number: H04B3/46

    Abstract: A method for detecting and isolating domain specific faults includes comparing a first media quality report for a communication from a first node with a second media quality report for the communication from a second node. The first node comprises an ingress node of a first domain for the communication and the second node comprises an egress node of the first domain for the communication. The method also includes determining that the difference between at least one aspect of the first media quality report and at least one corresponding aspect of the second media quality report exceeds a first threshold. The method further includes, upon determining that the difference exceeds the first threshold, determining a first path between the first node and the second node used by the communication. The method additionally includes isolating at least one source causing the difference between the first media quality report and the second media quality report.

    Abstract translation: 用于检测和隔离域特定故障的方法包括将来自第一节点的通信的第一媒体质量报告与用于来自第二节点的通信的第二媒体质量报告进行比较。 第一节点包括用于通信的第一域的入口节点,并且第二节点包括用于通信的第一域的出口节点。 该方法还包括确定第一媒体质量报告的至少一个方面与第二媒体质量报告的至少一个对应方面之间的差超过第一阈值。 该方法还包括:在确定差异超过第一阈值时,确定通信使用的第一节点和第二节点之间的第一路径。 该方法还包括隔离至少一个来源,导致第一媒体质量报告和第二媒体质量报告之间的差异。

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