公开(公告)号：US4884119A

公开(公告)日：1989-11-28

申请号：US184747

申请日：1988-04-22

Applicant: David A. B. Miller

Inventor： David A. B. Miller

IPC: G02B6/122 ,  G02F1/015 ,  G02F3/02 ,  H01L27/144 ,  H01L27/15 ,  H01L31/14 ,  H01S5/00 ,  H01S5/026 ,  H01S5/34

CPC classification number: H01L27/144 ,  G02F3/028

Abstract: In an optoelectronic integrated circuit, an electronic device is integrated with an optical device by fabricating the electronic device directly in a doped semiconductor layer of the optical device. The optical devices contemplated for use include at least a region of multiple low-doped or intrinsic quantum well layers; electronic devices include bipolar and field-effect transistors. Resulting integrated circuits exhibit a high degree of planarity.

Abstract translation: 在光电集成电路中，电子器件通过在光学器件的掺杂半导体层中直接制造电子器件而与光学器件集成。 考虑使用的光学装置包括至少一个多个低掺杂或固有量子阱层的区域; 电子器件包括双极型和场效应晶体管。 所产生的集成电路表现出高度的平坦度。

公开(公告)号：US4821091A

公开(公告)日：1989-04-11

申请号：US147130

申请日：1988-01-21

Applicant: Robert B. Hammond ,  Douglas R. Bowman

Inventor： Robert B. Hammond ,  Douglas R. Bowman

IPC: H01L27/144 ,  H01L31/0368 ,  H01L31/09 ,  H01L31/18 ,  H01L27/14 ,  H01L27/12 ,  H01L29/04

CPC classification number: H01L31/1804 ,  H01L27/144 ,  H01L31/03682 ,  H01L31/09 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.

Abstract translation: 多晶硅的光导元件具有固有的响应时间，其不限制整个电路响应。 通过LPCVD将未掺杂的多晶硅层沉积到二氧化硅上的所选厚度。 然后将沉积的多晶硅在选定的温度下退火，并且有效地获得有效产生增强的电流输出的晶体尺寸的时间。 随后，退火的多晶层通过离子注入暴露并损坏有效获得快速光导响应的损伤因子。

公开(公告)号：US4549782A

公开(公告)日：1985-10-29

申请号：US501716

申请日：1983-06-06

Applicant: Stewart E. Miller

Inventor： Stewart E. Miller

IPC: G02B6/30 ,  G02B6/00 ,  G02B6/12 ,  G02B6/28 ,  G02B6/287 ,  G02B6/36 ,  G02B6/42 ,  G02F1/025 ,  H01L27/144 ,  H01L31/12 ,  H01S5/00 ,  H01S5/026 ,  H04B10/02 ,  H04B10/213 ,  H04B10/28 ,  H04B9/00

CPC classification number: H01L31/12 ,  G02B6/2852 ,  G02B6/4202 ,  H01L27/144 ,  G02B6/3636

Abstract: An active tap for use in an optical multiple access network is disclosed. The tap comprises a semiconductor substrate on which the electronics associated with an active parallel path are fully integrated. These include optical detectors, amplifiers and light emitters formed using standard semiconductor fabrication techniques. A section of fiber, incorporated as an integral part of the tap structure, is provided with a pair of longitudinally spaced discontinuities for deflecting a portion of the incident signal onto the detector and for redirecting the output from the light emitter along the through-path. Alternatively, the tap substrate can be provided with a groove for receiving a fiber segment located anywhere along the distribution network.

Abstract translation: 公开了一种用于光学多址网络的有源分接头。 抽头包括半导体衬底，与主动平行路径相关联的电子器件完全集成在该衬底上。 这些包括光学检测器，放大器和使用标准半导体制造技术形成的发光体。 一部分光纤作为分接头结构的一个组成部分，设置有一对纵向间隔的不连续部分，用于将入射信号的一部分偏转到检测器上，并用于沿着通过路径重定向光发射器的输出。 或者，抽头基板可以设置有用于接收沿着分配网络位于任何地方的光纤段的槽。

公开(公告)号：US4438455A

公开(公告)日：1984-03-20

申请号：US512052

申请日：1983-07-08

Applicant: Masatoshi Tabei

Inventor： Masatoshi Tabei

IPC: H01L27/144 ,  H01L27/146 ,  H01L31/09 ,  H04N9/04 ,  H04N9/07

CPC classification number: H01L27/14647 ,  H01L27/144 ,  H01L27/14665 ,  H01L27/14667 ,  H01L31/09 ,  H04N9/045

Abstract: A solid-state color imager comprised of a solid-state base comprised of a plurality of electrical switching elements arranged in sets of three having superimposed thereon a plurality of photosensor layers which can detect and absorb different colors of light. Each photosensitive layer is comprised of an upper transparent continuous electrode sublayer, a photoconductive sublayer, and a back mosaic electrode sublayer which is electrically connected to said base. When light strikes the outermost photosensitive layer, light of a particular color is absorbed, and in connection with said base, its presence is electrically detected and recorded. The unabsorbed light continues to travel and strike the next succeeding photosensor layer whereat another color of light is absorbed and detected. The unabsorbed light passing through the second photosensor layer strikes the innermost photosensor layer which detects the remaining light. The photosensor layers are electrically insulated from each other and the base and make possible detection of three separate colors of light such as blue, green and red without the use of multi-color filter arrays.

Abstract translation: 固态彩色成像器由固态基底构成，该固态基底由多个以三个组合布置的电开关元件组成，其中叠加有多个能够检测和吸收不同颜色光的光电传感器层。 每个感光层包括上部透明连续电极子层，光电子层和与所述基底电连接的背面马赛克电极子层。 当光照射到最外面的感光层时，特定颜色的光被吸收，并且与所述基底相连，其存在被电检测和记录。 未吸收的光继续行进并撞击接下来的光电传感器层，在另一种颜色的光被吸收和检测。 通过第二光电传感器层的未吸收的光线撞击检测剩余光的最里面的光电传感器层。 光传感器层彼此电绝缘和基底，并且可以检测三种单独的颜色的光，例如蓝色，绿色和红色，而不使用多色滤光片阵列。

公开(公告)号：US3539816A

公开(公告)日：1970-11-10

申请号：US3539816D

申请日：1968-08-20

Applicant: NCR CO

Inventor： CHAMBERLIN RHODES R

IPC: G03B21/32 ,  G11B23/027 ,  H01L27/144 ,  H01L31/0336 ,  H01L31/16 ,  H01L31/18 ,  H01L15/06

CPC classification number: H01L31/1836 ,  G03B21/323 ,  G11B23/027 ,  H01L27/144 ,  H01L31/03365 ,  H01L31/164 ,  Y02E10/50

公开(公告)号：US11706518B2

公开(公告)日：2023-07-18

申请号：US17330578

申请日：2021-05-26

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yosuke Nishide ,  Yu Maehashi ,  Masahiro Kobayashi ,  Katsuyuki Hoshino ,  Akira Okita ,  Takeshi Ichikawa

IPC: H04N23/56 ,  H04N23/57 ,  G06F1/16 ,  H01L31/0216 ,  H01L31/147 ,  H01L31/02 ,  H01L27/146 ,  H01L27/15 ,  H01L27/14 ,  H01L31/10 ,  H05B33/02 ,  G09F9/30 ,  H01L27/32 ,  H05B33/14 ,  H01L51/50 ,  H05B33/12 ,  H01L27/144 ,  H04N25/70

CPC classification number: H04N23/57 ,  G06F1/163 ,  G09F9/30 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L27/32 ,  H01L31/02019 ,  H01L31/02164 ,  H01L31/10 ,  H01L31/147 ,  H01L51/50 ,  H04N23/56 ,  H04N25/70 ,  H05B33/02 ,  H05B33/12 ,  H05B33/14

Abstract: An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

公开(公告)号：US20190252257A1

公开(公告)日：2019-08-15

申请号：US16395745

申请日：2019-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yueh-Chuan Lee ,  Chia-Chan Chen ,  Ching-Heng Liu

IPC: H01L21/82 ,  H01L27/146 ,  H01L21/66 ,  H01L23/12 ,  B23K20/00 ,  H01L27/144 ,  H01L23/31 ,  B23K3/08 ,  B23K3/06 ,  B23K1/20 ,  B23K1/008 ,  B23K1/00

CPC classification number: H01L21/82 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/20 ,  B23K3/0623 ,  B23K3/08 ,  B23K20/007 ,  B23K2101/42 ,  H01L22/14 ,  H01L22/20 ,  H01L22/32 ,  H01L23/12 ,  H01L23/3114 ,  H01L27/144 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H01L2224/11

Abstract: A method for forming an integrated circuit (IC) package is provided. In some embodiments, a semiconductor workpiece comprising a scribe line, a first IC die, a second IC die, and a passivation layer is formed. The scribe line separates the first and second IC dies, and the passivation layer covers the first and second IC dies. The first IC die comprises a circuit and a pad structure electrically coupled to the circuit. The pad structure comprises a first pad, a second pad, and a bridge. The bridge is within the scribe line and connects the first pad to the second pad. The passivation layer is patterned to expose the first pad, but not the second pad, and testing is performed on the circuit through the first pad. The semiconductor workpiece is cut along the scribe line to individualize the first and second IC dies, and to remove the bridge.

公开(公告)号：US20190103503A1

公开(公告)日：2019-04-04

申请号：US16150921

申请日：2018-10-03

Applicant: THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING / MCGILL UNIVERSITY ,  VALORBEC, L.P.

Inventor： Monireh MOAYEDI POUR FARD ,  Christopher WILLIAMS ,  Glenn COWAN ,  Odile LIBOIRON-LADOUCEUR

IPC: H01L31/103 ,  G01J1/16 ,  H01L27/144

CPC classification number: H01L31/103 ,  G01J1/16 ,  H01L27/144

Abstract: There is described a photodetector for detecting incoming infrared light. The photodetector generally has a substrate; an i-type semiconductor region extending along the substrate, the i-type semiconductor region being sandwiched between a p-type semiconductor region and an n-type semiconductor region; a grating coupler being optically connected to one of two ends of the i-type semiconductor region, the grating coupler redirecting incoming infrared light into and along the i-type semiconductor region via the one of the two ends of the i-type semiconductor region for propagation of infrared light along the i-type semiconductor region; and a photocurrent detection circuit electrically connected to the p-type semiconductor region and to the n-type semiconductor region for detecting a photocurrent resulting from said propagation.

公开(公告)号：US20180350851A1

公开(公告)日：2018-12-06

申请号：US15778940

申请日：2016-09-14

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： SHINICHI YOSHIDA ,  SHUNSUKE MARUYAMA ,  RYOSUKE MATSUMOTO ,  SHUJI MANDA ,  TOMOMASA WATANABE

IPC: H01L27/144 ,  H01L27/146 ,  H01L31/102 ,  H04N5/33 ,  H04N5/369 ,  H01L31/0224

CPC classification number: H01L27/1443 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14603 ,  H01L27/14649 ,  H01L31/02161 ,  H01L31/0224 ,  H01L31/022408 ,  H01L31/102 ,  H01L31/1035 ,  H04N5/33 ,  H04N5/369

Abstract: This light-receiving element includes: a substrate; a photoelectric conversion layer that is provided on the substrate and includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electric charges; a semiconductor layer that is provided on the photoelectric conversion layer and includes a second compound semiconductor, and has an opening in a selective region; and an electrode that buries the opening of the semiconductor layer and is electrically coupled to the photoelectric conversion layer.

公开(公告)号：US20180299567A1

公开(公告)日：2018-10-18

申请号：US16006893

申请日：2018-06-13

Applicant: Toshiba Electron Tubes & Devices Co., Ltd.

Inventor： Hiroshi ONIHASHI

IPC: G01T1/208 ,  G01T1/20 ,  H01L27/146

CPC classification number: G01T1/208 ,  G01T1/2018 ,  G01T7/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14636 ,  H01L27/14663 ,  H01L29/786 ,  H04N5/32 ,  H04N5/353

Abstract: According to one embodiment, a radiation detector includes a substrate, control lines, data lines, a photoelectric conversion part provided in a region drawn by the control and data lines, and including thin film transistors and photoelectric conversion elements electrically connected to the corresponding control and data lines, a control circuit electrically connected to the control lines, a signal detection circuit electrically connected to the data lines, at least one reference potential part electrically connected to the signal detection circuit, and a determination part electrically connected to the signal detection circuit. The signal detection circuit detects a first current integral value via the data lines and detects a second current integral value from the at least one reference potential part. The determination part determines an incidence start time of a radiation on the basis of a difference between the detected first and second current integral values.