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    Method and system for adaptively finding reference voltages for reading data from a MLC flash memory
    22.
    发明授权
    Method and system for adaptively finding reference voltages for reading data from a MLC flash memory 有权
    用于自适应地寻找用于从MLC闪速存储器读取数据的参考电压的方法和系统

    公开(公告)号：US07848152B1

    公开(公告)日：2010-12-07

    申请号：US12464240

    申请日：2009-05-12

    Applicant: Chien-Fu Huang ,  Ming-Hung Chou ,  Han-Lung Huang ,  Shih-Keng Cho

    Inventor： Chien-Fu Huang ,  Ming-Hung Chou ,  Han-Lung Huang ,  Shih-Keng Cho

    IPC: G11C16/04

    CPC classification number: G11C11/5642 ,  G11C2211/5621 ,  G11C2211/5634

    Abstract: A method and system for adaptively finding reference voltages for reading data from a multi-level cell (MLC) flash memory is disclosed. According to one embodiment, information about an initial threshold voltage distribution is firstly provided. A first threshold voltage in the initial threshold voltage distribution is then associated with a second threshold voltage in a shifted threshold voltage distribution to be determined, such that the information corresponding to the first threshold voltage is approximate to the information corresponding to the second threshold voltage. Accordingly, initial reference voltage or voltages of the initial threshold voltage distribution are shifted with an amount approximate to difference between the first threshold voltage and the second threshold voltage, thereby resulting in new reference voltage or voltages for reading the data from the MLC flash memory.

    Abstract translation: 公开了一种用于自适应地寻找用于从多电平单元（MLC）闪速存储器读取数据的参考电压的方法和系统。 根据一个实施例，首先提供关于初始阈值电压分布的信息。 初始阈值电压分布中的第一阈值电压然后与移位的阈值电压分布中的第二阈值电压相关联，以使得与第一阈值电压对应的信息接近于与第二阈值电压对应的信息。 因此，初始阈值电压分布的初始参考电压或电压以接近于第一阈值电压和第二阈值电压之间的差值的量移动，由此导致用于从MLC闪速存储器读取数据的新参考电压或电压。

    Method for reading multiple-value memory cells
    24.
    发明申请
    Method for reading multiple-value memory cells 有权

    公开(公告)号：US20080239804A1

    公开(公告)日：2008-10-02

    申请号：US11692909

    申请日：2007-03-28

    Applicant: Chien-Fu Huang ,  Fuja Shone

    Inventor： Chien-Fu Huang ,  Fuja Shone

    IPC: G11C11/34

    CPC classification number: G11C8/10 ,  G11C11/5642 ,  G11C2211/5642 ,  G11C2211/5648

    Abstract: A read method for multiple-value information in a semiconductor memory such as a nonvolatile semiconductor memory is introduced. The method includes obtaining a first data from a selected multiple-value memory cell by applying a first voltage to a control gate of the selected multiple-value memory cell. A second data from the selected multiple-value memory cell is obtained by applying a second voltage to the control gate of the selected multiple-value memory cell. A first bit of the plurality of bits stored in the selected multiple-value memory cell is then obtained by performing a predetermined calculation on the first data and the second data. A second bit of the plurality of bits is obtained from the selected multiple-value memory cell by applying a third voltage to the control gate of the selected multiple-value memory cell.

    High-efficiency light-emitting device and manufacturing method thereof
    26.
    发明授权
    High-efficiency light-emitting device and manufacturing method thereof 有权
    高效发光元件及其制造方法

    公开(公告)号：US08994052B2

    公开(公告)日：2015-03-31

    申请号：US13161835

    申请日：2011-06-16

    Applicant: Chien-Fu Shen ,  Chao-Hsing Chen ,  Chien-Fu Huang ,  Shih-I Chen ,  Chiu-Lin Yao ,  Chia-Liang Hsu ,  Chen Ou

    Inventor： Chien-Fu Shen ,  Chao-Hsing Chen ,  Chien-Fu Huang ,  Shih-I Chen ,  Chiu-Lin Yao ,  Chia-Liang Hsu ,  Chen Ou

    IPC: H01L33/00 ,  H01L33/58 ,  H01L33/10 ,  H01L33/22

    CPC classification number: H01L33/10 ,  H01L33/22

    Abstract: A light-emitting device includes a first semiconductor layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer comprises a first region right under the first pad and a plurality of voids formed in the first region, wherein the region outside the first region in the second semiconductor layer is devoid of voids, and an area of the first region is smaller than that of the first pad in top view and the area of the first pad is smaller than that of the second semiconductor layer in top view, and the light emitted from the active layer is extracted from a top surface of the second semiconductor layer opposite the first semiconductor layer.

    Abstract translation: 发光器件包括第一半导体层; 形成在所述第一半导体层上的有源层; 形成在所述有源层上的第二半导体层; 以及形成在所述第二半导体层上的第一焊盘，其中所述第二半导体层包括位于所述第一焊盘下方的第一区域和形成在所述第一区域中的多个空隙，其中所述第二半导体层中的所述第一区域外部的区域为空 并且第一区域的面积比顶视图中的第一区域的面积小，并且第一衬垫的面积在俯视图中小于第二半导体层的面积，并且从有源层发射的光为 从与第一半导体层相对的第二半导体层的顶表面提取。

    Photoelectronic device
    27.
    发明授权
    Photoelectronic device 有权
    光电器件

    公开(公告)号：US08845143B2

    公开(公告)日：2014-09-30

    申请号：US12289478

    申请日：2008-10-29

    Applicant: Chia-Liang Hsu ,  Chien-Fu Huang ,  Chun-Yi Wu

    Inventor： Chia-Liang Hsu ,  Chien-Fu Huang ,  Chun-Yi Wu

    IPC: F21V5/00 ,  H01L33/54 ,  H01L33/48

    CPC classification number: H01L33/54 ,  H01L33/483 ,  Y10S362/80

    Abstract: A photoelectronic device including a carrier, a light-emitting component mounted on the carrier; a patterned structure deposited on the carrier and around the light-emitting component; and a transparent sealing structure formed above the light-emitting component. The patterned structure mentioned above can cause the transparent sealing structure to be focused above the light-emitting component, and restrained in the patterned structure. The transparent sealing structure with predetermined proportional configuration is obtained by controlling the quantity of the transparent sealing structure. Therefore light efficiency of the photoelectronic device can be greatly improved.

    Abstract translation: 一种光电子器件，包括载体，安装在载体上的发光部件; 沉积在载体上并围绕发光部件的图案化结构; 以及形成在发光部件上方的透明密封结构。 上述图案化结构可以使透明密封结构聚焦在发光部件的上方，并被限制在图案化结构中。 通过控制透明密封结构的数量来获得具有预定比例构型的透明密封结构。 因此，可以大大提高光电子器件的光效率。

    Light-emitting device
    28.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08759848B2

    公开(公告)日：2014-06-24

    申请号：US13545354

    申请日：2012-07-10

    Applicant: Chao-Hsing Chen ,  Chien-Kai Chung ,  Hsin-Mao Liu ,  Chiu-Lin Yao ,  Chien-Fu Huang

    Inventor： Chao-Hsing Chen ,  Chien-Kai Chung ,  Hsin-Mao Liu ,  Chiu-Lin Yao ,  Chien-Fu Huang

    IPC: H01L33/08 ,  H01L25/075 ,  H01L33/62 ,  H01L33/38

    CPC classification number: H01L25/0753 ,  H01L25/0756 ,  H01L33/385 ,  H01L33/62 ,  H01L2224/16

    Abstract: The application provides a light-emitting device, comprising a substrate; a plurality of first light-emitting diode units on the substrate, wherein every first light-emitting diode unit has a first electrode structure; and a plurality of second light-emitting diode units among the plurality of first light-emitting diode units, wherein every second light-emitting diode unit has a second electrode structure. The second electrode structure of the second light-emitting diode unit is flipped over and electrically connected with the adjacent first electrode structure of the first light-emitting diode unit.

    Abstract translation: 本发明提供一种发光装置，其包括基板; 多个第一发光二极管单元，其中每个第一发光二极管单元具有第一电极结构; 以及多个第一发光二极管单元中的多个第二发光二极管单元，其中每个第二发光二极管单元具有第二电极结构。 第二发光二极管单元的第二电极结构被翻转并与第一发光二极管单元的相邻的第一电极结构电连接。

    Optoelectronic device and the manufacturing method thereof
    29.
    发明授权
    Optoelectronic device and the manufacturing method thereof 有权
    光电子器件及其制造方法

    公开(公告)号：US08474233B2

    公开(公告)日：2013-07-02

    申请号：US13528059

    申请日：2012-06-20

    Applicant: Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang

    Inventor： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang

    IPC: H01L33/06

    CPC classification number: H01L33/46 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44

    Abstract: An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.

    Abstract translation: 光电器件具有衬底和衬底上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度。 第二窗口层具有第二薄层电阻，第二厚度和第二杂质浓度。 半导体系统在第一窗口层和第二窗口层之间。 第二窗口层具有与半导体系统不同的半导体材料，第二薄层电阻大于第一薄层电阻。 提供一种制造方法，其具有以下步骤：提供衬底，在衬底上形成半导体系统，并在半导体系统上形成窗口层。 窗口层具有与半导体系统不同的半导体材料。 选择性地去除窗口层在窗口层和半导体系统之间形成大于1微米的宽度差。

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