公开(公告)号：US09833487B2

公开(公告)日：2017-12-05

申请号：US12865995

申请日：2009-02-19

Applicant: Dong-Suk Park ,  Myung Chul Yoo ,  Do-Young Choi ,  Hyung In Yang ,  Yong-Hyeon Baek ,  Jeong-Eun Huh ,  Kyoung Soo Kim ,  Yong-Baik Cho ,  In Ho Jung ,  Jong Hyun Hur ,  Jae Dong Lee

Inventor： Dong-Suk Park ,  Myung Chul Yoo ,  Do-Young Choi ,  Hyung In Yang ,  Yong-Hyeon Baek ,  Jeong-Eun Huh ,  Kyoung Soo Kim ,  Yong-Baik Cho ,  In Ho Jung ,  Jong Hyun Hur ,  Jae Dong Lee

IPC: A61K36/355 ,  A61K36/8964 ,  A23L33/105

CPC classification number: A61K36/355 ,  A23L33/105 ,  A23V2002/00 ,  A61K36/8964 ,  A61K2300/00 ,  A23V2250/21 ,  A23V2200/306 ,  A23V2200/316

Abstract: In some embodiments, a composition for the treatment and inhibition or prevention of arthritic diseases includes an extract of mixed herbs, the mixed herbs including an active ingredient with Lonicera japonica THUNB and Anemarrhena asphodeloides BUNGE.

公开(公告)号：US20130112914A1

公开(公告)日：2013-05-09

申请号：US13617160

申请日：2012-09-14

Applicant: Choong-Ho HAN ,  Sang-Kyun KIM ,  Ye-Hwan KIM ,  Joon-Sang PARK ,  Jin-Woo BAE ,  Won-Jun LEE ,  Kyoung-Moon KANG ,  Jae-Dong LEE

Inventor： Choong-Ho HAN ,  Sang-Kyun KIM ,  Ye-Hwan KIM ,  Joon-Sang PARK ,  Jin-Woo BAE ,  Won-Jun LEE ,  Kyoung-Moon KANG ,  Jae-Dong LEE

IPC: C09K13/00

CPC classification number: C09K3/1463 ,  C09G1/02 ,  C09K3/1472 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

Abstract: A slurry composition includes an abrasive agent, an oxidizing agent, and a first adsorption inhibitor including a polyethylene oxide copolymer. A method of manufacturing a phase change memory device may include providing a substrate including an interlayer insulating film having a trench and a phase change material layer on the interlayer insulating film filling the trench, and performing chemical mechanical polishing on the phase change material layer using the slurry composition to form a phase change material pattern layer.

Abstract translation: 浆料组合物包括研磨剂，氧化剂和包含聚环氧乙烷共聚物的第一吸附抑制剂。 制造相变存储器件的方法可以包括在填充沟槽的层间绝缘膜上提供包括具有沟槽和相变材料层的层间绝缘膜的衬底，并且使用相变材料层对相变材料层进行化学机械抛光 浆料组成以形成相变材料图案层。

公开(公告)号：US08241988B2

公开(公告)日：2012-08-14

申请号：US13204752

申请日：2011-08-08

Applicant: Byoung-ho Kwon ,  Chang-ki Hong ,  Bo-un Yoon ,  Jae-dong Lee ,  Sang-jin Kim

Inventor： Byoung-ho Kwon ,  Chang-ki Hong ,  Bo-un Yoon ,  Jae-dong Lee ,  Sang-jin Kim

IPC: H01L21/76 ,  H01L21/00 ,  H01L21/66 ,  G01R31/26

CPC classification number: H01L23/544 ,  G03F7/70633 ,  G03F9/7076 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A photo key has a plurality of first regions spaced apart from one another on a semiconductor substrate, and a second region surrounding the first regions, and one of the first regions and the second region constitutes a plurality of photo key regions spaced apart from one another. Each of the photo key regions includes a plurality of first conductive patterns spaced apart from one another; and a plurality of second conductive patterns interposed between the first conductive patterns.

Abstract translation: 光钥匙具有在半导体衬底上彼此间隔开的多个第一区域和围绕第一区域的第二区域，并且第一区域和第二区域中的一个构成彼此间隔开的多个光键区域 。 每个照片键区域包括彼此间隔开的多个第一导电图案; 以及介于所述第一导电图案之间的多个第二导电图案。

公开(公告)号：US08110499B2

公开(公告)日：2012-02-07

申请号：US12437390

申请日：2009-05-07

Applicant: Dae-Hyuk Kang ,  Young-Hoo Kim ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Jae-Dong Lee ,  Dae-Hong Eom ,  Jeong-Nam Han

Inventor： Dae-Hyuk Kang ,  Young-Hoo Kim ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Jae-Dong Lee ,  Dae-Hong Eom ,  Jeong-Nam Han

IPC: H01L21/44

CPC classification number: H01L21/76843 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/485 ,  H01L27/24 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

Abstract: An insulation layer may be formed on an object having a contact region. The insulation layer may be partially etched to form an opening exposing the contact region. A material layer including silicon and oxygen may be formed on the exposed contact region. A metal layer may be formed on the material layer including silicon and oxygen. The material layer including silicon and oxygen may be reacted with the metal layer to form a metal oxide silicide layer at least on the contact region. A conductive layer may be formed on the metal oxide silicide layer to fill up the opening.

Abstract translation: 可以在具有接触区域的物体上形成绝缘层。 绝缘层可以被部分蚀刻以形成暴露接触区域的开口。 可以在暴露的接触区域上形成包括硅和氧的材料层。 可以在包括硅和氧的材料层上形成金属层。 包括硅和氧的材料层可以与金属层反应，以至少在接触区域上形成金属氧化物硅化物层。 可以在金属氧化物硅化物层上形成导电层以填充开口。

公开(公告)号：US20120007018A1

公开(公告)日：2012-01-12

申请号：US13240271

申请日：2011-09-22

Applicant: Jong-Won LEE ,  Sang-Yeob Han ,  Chang-Ki Hong ,  Jae-Dong Lee

Inventor： Jong-Won LEE ,  Sang-Yeob Han ,  Chang-Ki Hong ,  Jae-Dong Lee

IPC: C09K13/00 ,  B82Y30/00

CPC classification number: H01L21/31053 ,  C09G1/02 ,  H01L29/66583 ,  H01L29/66795 ,  H01L29/7851

Abstract: Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water. The first agent includes poly(acrylic acid), The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process.

Abstract translation: 提供了相对于氧化硅选择性研磨氮化硅的浆料组合物，研磨氮化硅层的方法和使用其制造半导体器件的方法。 浆料组合物包括用于降低氧化物抛光速率的第一试剂，磨料颗粒和水。 第一种试剂包括聚（丙烯酸）。在半导体制造过程中，浆料组合物可以具有相对于氧化硅的氮化硅的高抛光选择性，以选择性地研磨氮化硅层。

公开(公告)号：US08084344B2

公开(公告)日：2011-12-27

申请号：US12292195

申请日：2008-11-13

Applicant: Jong-Won Lee ,  Sang-Yeob Han ,  Chang-Ki Hong ,  Bo-Un Yoon ,  Jae-Dong Lee

Inventor： Jong-Won Lee ,  Sang-Yeob Han ,  Chang-Ki Hong ,  Bo-Un Yoon ,  Jae-Dong Lee

IPC: H01L21/4763

CPC classification number: H01L21/76897 ,  H01L27/10855 ,  H01L27/10873 ,  H01L27/10888 ,  H01L29/6653

Abstract: A method of fabricating a contact plug of a semiconductor device is provided, the method includes forming a gate pattern on a substrate, forming a capping pattern to cover an upper surface and sidewalls of the gate pattern, forming an interlayer insulation layer on the substrate such that the interlayer insulation layer exposes an upper surface of the capping pattern, and removing a portion of the capping pattern and the interlayer insulation layer such that the upper surface of the capping pattern is planarized.

Abstract translation: 提供了制造半导体器件的接触插塞的方法，该方法包括在衬底上形成栅极图案，形成覆盖图案的上表面和侧壁的封盖图案，在衬底上形成层间绝缘层，如 层间绝缘层暴露封盖图案的上表面，并且去除封盖图案和层间绝缘层的一部分，使得封盖图案的上表面被平坦化。

公开(公告)号：US20100127398A1

公开(公告)日：2010-05-27

申请号：US12592042

申请日：2009-11-18

Applicant: Young-Hoo Kim ,  Chang-Ki Hong ,  Jae-Dong Lee

Inventor： Young-Hoo Kim ,  Chang-Ki Hong ,  Jae-Dong Lee

IPC: H01L23/498

CPC classification number: H01L21/76831 ,  H01L21/76885 ,  H01L27/10855 ,  H01L27/10888

Abstract: In a wiring structure of a semiconductor device and a method of manufacturing the same, a wiring structure includes a contact pad, a contact plug, a spacer and an insulation interlayer pattern. The contact pad is electrically connected to a contact region of a substrate. The contact plug is provided on the contact pad and is electrically connected to the contact pad. The spacer faces an upper side surface of the contact pad and sidewalls of the contact plug. The insulation interlayer pattern has an opening, the contact plug and the spacer being provided in the opening. The spacer of the wiring structure may prevent the contact pad from being damaged by a cleaning solution while forming a contact plug to be connected to a capacitor.

Abstract translation: 在半导体器件的布线结构及其制造方法中，布线结构包括接触焊盘，接触插塞，间隔物和绝缘夹层图案。 接触垫电连接到基板的接触区域。 接触插头设置在接触垫上并且电连接到接触垫。 隔离物面向接触垫的上侧表面和接触插塞的侧壁。 绝缘夹层图案具有开口，接触插塞和间隔件设置在开口中。 布线结构的间隔件可以防止接触垫在形成要连接到电容器的接触插塞时被清洁溶液损坏。

公开(公告)号：US07718535B2

公开(公告)日：2010-05-18

申请号：US11984399

申请日：2007-11-16

Applicant: Jaekwang Choi ,  Jae-Dong Lee ,  Chang-Ki Hong

Inventor： Jaekwang Choi ,  Jae-Dong Lee ,  Chang-Ki Hong

IPC: H01L21/306

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/7684

Abstract: The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The slurry compositions include one or more non-ionic polymeric surfactants that will selectively form a passivation layer on an exposed polysilicon surface in order to suppress the polysilicon removal rate relative to silicon oxide and silicon nitride and improve the planarity of the polished substrate. Exemplary surfactants include alkyl and aryl alcohols of ethylene oxide (EO) and propylene oxide (PO) block copolymers and may be present in the slurry compositions in an amount of up to about 5 wt %, although much smaller concentrations may be effective. Other slurry additives may include viscosity modifiers, pH modifiers, dispersion agents, chelating agents, and amine or imine surfactants suitable for modifying the relative removal rates of silicon nitride and silicon oxide.

Abstract translation: 提供适用于涉及多晶硅层的化学机械抛光（CMP）的工艺的新的浆料组合物的本发明的示例性实施方案。 浆料组合物包括一种或多种非离子聚合物表面活性剂，其将在暴露的多晶硅表面上选择性地形成钝化层，以便抑制相对于氧化硅和氮化硅的多晶硅去除速率并提高抛光的基材的平面度。 示例性的表面活性剂包括环氧乙烷（EO）和环氧丙烷（PO）嵌段共聚物的烷基和芳基醇，并且可以以高达约5重量％的量存在于浆料组合物中，尽管更小的浓度可能是有效的。 其它浆料添加剂可以包括粘度调节剂，pH调节剂，分散剂，螯合剂和适于改变氮化硅和氧化硅的相对去除速率的胺或亚胺表面活性剂。

公开(公告)号：US07440977B2

公开(公告)日：2008-10-21

申请号：US11157885

申请日：2005-06-20

Applicant: Hae-Young Bae ,  Jae-Dong Lee ,  Young-Hwan Oh ,  Gyoung-Bae Kim ,  Myoung-Keun Kim ,  Soon-Young Park ,  Ho-Seok Kim ,  Yong-Il Jang

Inventor： Hae-Young Bae ,  Jae-Dong Lee ,  Young-Hwan Oh ,  Gyoung-Bae Kim ,  Myoung-Keun Kim ,  Soon-Young Park ,  Ho-Seok Kim ,  Yong-Il Jang

IPC: G06F17/30

CPC classification number: G06F11/1658 ,  G06F11/2048 ,  Y10S707/99931 ,  Y10S707/99953

Abstract: The present invention provides a recovery method using extendible hashing-based cluster logs in a shared-nothing spatial database cluster, which eliminates the duplication of cluster logs required for cluster recovery in a shared-nothing database cluster, so that recovery time is decreased, thus allowing the shared-nothing spatial database cluster system to continuously provide stable service. In the recovery method, if a failure occurs in a predetermined node, a second node in a group, including the node, records cluster logs in main memory on the basis of extendible hashing. If the node that has failed recovers itself using a local log, the second node in the group transmits cluster logs in packets to a recovery node that is the failed node. If the recovery node reflects the received cluster logs and maintains consistency with other nodes in the group, the recovery node resumes normal service.

Abstract translation: 本发明提供了一种在无共享空间数据库集群中使用可扩展散列集群日志的恢复方法，其消除了在无共享数据库集群中集群恢复所需的集群日志的重复，从而减少了恢复时间 使无共享的空间数据库集群系统不断提供稳定的服务。 在恢复方法中，如果在预定节点中发生故障，则包括该节点在内的组中的第二节点基于可扩展哈希在主存储器中记录集群日志。 如果失败的节点使用本地日志恢复自身，则该组中的第二个节点将分组中的群集日志传输到作为故障节点的恢复节点。 如果恢复节点反映接收的群集日志并维护与组中其他节点的一致性，则恢复节点恢复正常服务。

公开(公告)号：US07244649B2

公开(公告)日：2007-07-17

申请号：US11007443

申请日：2004-12-09

Applicant: Jae-Dong Lee ,  Chang-Ki Hong ,  Young-Rae Park

Inventor： Jae-Dong Lee ,  Chang-Ki Hong ,  Young-Rae Park

IPC: H01L21/8242

CPC classification number: H01L28/91 ,  H01L27/10852

Abstract: A method for manufacturing a capacitor is disclosed. An etch-stop layer or a polishing stop layer is employed to protect a storage electrode of the capacitor from being damaged by a chemical mechanical polishing process or an etch-back process during its fabrication.

Abstract translation: 公开了一种制造电容器的方法。 使用蚀刻停止层或抛光停止层来保护电容器的存储电极在其制造期间被化学机械抛光工艺或回蚀工艺损坏。