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公开(公告)号：US06664122B1
公开(公告)日：2003-12-16
申请号：US09996425
申请日：2001-11-27
IPC分类号： H01L2166
CPC分类号： H01L21/76843 , C23C18/1617 , C23C18/1669 , C23C18/1675 , C23C18/1676 , C23C18/168 , C23C18/1692 , C23C18/40 , H01L21/288 , H01L21/76864 , H01L21/76868 , H01L21/76873 , H01L2221/1089 , Y10S977/89
摘要： Disclosed is a procedure for deposition of a thin and relatively continuous electroless copper film on the substrate of sub-micron integrated circuit features. The electroless copper film is deposited onto a previously deposited PVD copper film, which may be discontinuous. The continuous film formed by electroless deposition allows for sufficient filling of the sub-micron integrated circuit features by electrodeposition. The electroless bath employed to form the continuous electroless copper film may be composed of a reducing agent, a complexing agent, a source of copper ions, a pH adjuster, and optionally one or more surfactants and/or stabilizers. In one example, the reducing agent contains an aldehyde moiety.
摘要翻译： 公开了在亚微米集成电路特征的衬底上沉积薄而相对连续的无电铜膜的步骤。 将化学镀铜膜沉积在预先沉积的PVD铜膜上，其可以是不连续的。 通过无电沉积形成的连续膜允许通过电沉积充分填充亚微米集成电路特征。 用于形成连续化学镀铜膜的无电镀浴可以由还原剂，络合剂，铜离子源，pH调节剂和任选的一种或多种表面活性剂和/或稳定剂组成。 在一个实例中，还原剂含有醛部分。
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22.发明授权Electroplating chamber with rotatable wafer holder and pre-wetting and rinsing capability 失效具有旋转晶片保持器和预润湿和冲洗能力的电镀室
公开(公告)号：US6099702A
公开(公告)日：2000-08-08
申请号：US96015
申请日：1998-06-10
摘要： A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.
摘要翻译： 电镀槽具有内浸镀液容器，用于在浸没在由内镀浴容器所包含的溶液中的工件（例如，晶片）上进行电镀。 回收入口将任何溢出内部镀浴容器的溶液漏回到储存容器中，以循环回内部镀浴容器。 还提供废物通道，其具有与回收通道的入口不同的高度的入口。 电镀后，将晶片提升到一个位置并旋转。 在旋转的同时，将晶片用例如超纯水彻底冲洗。 晶圆的旋转速度和高度决定了水和溶液是通过回收通道还是通过废物通道进行回收。
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23.发明授权Dynamic current distribution control apparatus and method for wafer electroplating 有权晶圆电镀动态电流分配控制装置及方法公开(公告)号：US09045840B2
公开(公告)日：2015-06-02
申请号：US13306527
申请日：2011-11-29
CPC分类号： C25D17/001 , C25D17/002 , C25D17/007 , C25D17/06 , C25D17/10 , C25D17/12 , C25D21/12
摘要： Methods, systems, and apparatus for plating a metal onto a work piece are described. In one aspect, an apparatus includes a plating chamber, a substrate holder, an anode chamber housing an anode, and an ionically resistive ionically permeable element positioned between a substrate and the anode chamber during electroplating. The anode chamber may be movable with respect to the ionically resistive ionically permeable element to vary a distance between the anode chamber and the ionically resistive ionically permeable element during electroplating. The anode chamber may include an insulating shield oriented between the anode and the ionically resistive ionically permeable element, with opening in a central region of the insulating shield.
摘要翻译： 描述了将金属电镀到工件上的方法，系统和装置。 一方面，一种设备包括电镀室，衬底保持器，容纳阳极的阳极室和在电镀期间定位在衬底和阳极室之间的离子电离性离子渗透元件。 阳极室可以相对于离子电离性离子渗透元件移动，以在电镀期间改变阳极室和离子电阻性离子可渗透元件之间的距离。 阳极室可以包括定向在阳极和离子电离性离子渗透元件之间的绝缘屏蔽，其在绝缘屏蔽的中心区域中开口。
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24.发明申请DYNAMIC CURRENT DISTRIBUTION CONTROL APPARATUS AND METHOD FOR WAFER ELECTROPLATING 有权动态电流分配控制装置和用于电镀的方法公开(公告)号：US20130137242A1
公开(公告)日：2013-05-30
申请号：US13687937
申请日：2012-11-28
CPC分类号： C25D21/12 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/007 , C25D17/06 , C25D17/10 , H01L21/02697
摘要： Methods, systems, and apparatus for plating a metal onto a work piece are described. In one aspect, an apparatus includes a plating chamber, a substrate holder, an anode chamber housing an anode, an ionically resistive ionically permeable element positioned between a substrate and the anode chamber during electroplating, an auxiliary cathode located between the anode and the ionically resistive ionically permeable element, and an insulating shield with an opening in its central region. The insulating shield may be movable with respect to the ionically resistive ionically permeable element to vary a distance between the shield and the ionically resistive ionically permeable element during electroplating.
摘要翻译： 描述了将金属电镀到工件上的方法，系统和装置。 一方面，一种装置包括电镀室，衬底保持器，容纳阳极的阳极室，在电镀期间位于衬底和阳极室之间的离子电阻离子可渗透元件，位于阳极和离子电阻之间的辅助阴极 离子渗透元件，以及在其中心区域具有开口的绝缘护罩。 绝缘屏蔽件可以相对于离子电离性离子渗透元件移动，以在电镀期间改变屏蔽层与离子电阻性离子渗透元件之间的距离。
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公开(公告)号：US20120264290A1
公开(公告)日：2012-10-18
申请号：US13108894
申请日：2011-05-16
申请人： Jonathan D. REID , Huanfeng ZHU
发明人： Jonathan D. REID , Huanfeng ZHU
IPC分类号： H01L21/768 , C25D5/50 , B05C13/00 , B05C11/00 , B05C9/14
CPC分类号： C25D21/12 , C25D3/38 , C25D7/123 , C25D17/001 , C25D17/008 , H01L21/2885 , H01L21/6723 , H01L21/76864 , H01L21/76882
摘要： Methods, apparatus, and systems for depositing copper and other metals are provided. In some implementations, a wafer substrate is provided to an apparatus. The wafer substrate has a surface with field regions and a feature. A copper layer is plated onto the surface of the wafer substrate. The copper layer is annealed to redistribute copper from regions of the wafer substrate to the feature. Implementations of the disclosed methods, apparatus, and systems allow for void-free bottom-up fill of features in a wafer substrate.
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公开(公告)号：US20120181170A1
公开(公告)日：2012-07-19
申请号：US13432767
申请日：2012-03-28
申请人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
发明人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
IPC分类号： C25D17/08
CPC分类号： C25D17/001 , C25D7/123
摘要： Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.
摘要翻译： 提供了诸如基板，密封圈和接触环组件的方法，装置和各种装置部件，以减少设备中接触区域的污染。 在电镀工艺之后从设备中取出半导体晶片时可能发生污染。 在某些实施方案中，使用具有疏水涂层的基板，例如聚酰胺 - 酰亚胺（PAI）和有时聚四氟乙烯（PTFE）。 此外，接触环组件的接触尖端可以被定位成更远离唇密封的唇缘。 在某些实施方案中，接触环组件和/或唇膏的一部分还包括疏水性涂层。
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27.发明授权公开(公告)号：US08147660B1
公开(公告)日：2012-04-03
申请号：US11731706
申请日：2007-03-30
申请人： Steven T. Mayer , Jonathan D. Reid
发明人： Steven T. Mayer , Jonathan D. Reid
CPC分类号： C25D17/002 , C25D17/001 , C25D17/005 , C25D17/008 , C25D17/06 , C25D17/10 , C25D17/12 , C25D21/12 , C25F7/00 , H01L21/2885 , H01L21/76877 , Y10S204/07
摘要： A semiconductive counter electrode covers a highly electronically conductive electric current buss. The semiconductive counter electrode is impervious to ion flow. A substrate holder is operable to hold a substrate and to form a thin fluid gap between the semiconductive counter electrode and a substrate surface. A thin liquid electrolyte layer is located in the thin fluid gap. A power supply connected to the electric current buss and a peripheral edge of a conductive substrate surface is able to generate a potential difference between the electric current buss and the semiconductive counter electrode, on one side of the electrolyte layer, and the substrate on the other side. The semiconductive counter electrode provides a substantial resistance in the various current flow paths between the electric current buss and the semiconductive counter electrode, on one side, and the conductive substrate surface, on the other, thereby enhancing control of current distribution.
摘要翻译： 半导体对电极覆盖高度电子导电的电流总线。 半导体对电极不受离子流的影响。 衬底保持器可操作以保持衬底并且在半导体对电极和衬底表面之间形成薄的流体间隙。 薄的液体电解质层位于薄的液体间隙中。 连接到电流母线的电源和导电衬底表面的外围边缘能够在电解质层的一侧上产生电流母线和半导体对电极之间的电位差，并且在另一侧上产生衬底 侧。 半导体对电极在电流总线和半导体对电极之间的一侧和导电基板表面上的各种电流流动路径中提供了显着的电阻，从而增强了电流分布的控制。
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公开(公告)号：US08043967B2
公开(公告)日：2011-10-25
申请号：US12762275
申请日：2010-04-16
申请人： Jonathan D. Reid , Katie Qun Wang , Mark J. Wiley
发明人： Jonathan D. Reid , Katie Qun Wang , Mark J. Wiley
IPC分类号： H01L21/44
CPC分类号： H01L25/50 , C25D3/38 , C25D7/123 , C25D17/001 , C25D21/12 , H01L21/2885 , H01L21/76898 , H01L2224/0554 , H01L2224/05573 , H01L2224/13025 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.
摘要翻译： 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 使用高铜浓度和低酸度电镀溶液将铜沉积到通孔硅通孔中。
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公开(公告)号：US20110083965A1
公开(公告)日：2011-04-14
申请号：US12577619
申请日：2009-10-12
摘要： An electroplating apparatus for filling recessed features on a semiconductor substrate includes an electrolyte concentrator configured for concentrating an electrolyte having Cu2+ ions to form a concentrated electrolyte solution that would have been supersaturated at 20° C. The electrolyte is maintained at a temperature that is higher than 20° C., such as at least at about 40° C. The apparatus further includes a concentrated electrolyte reservoir and a plating cell, where the plating cell is configured for electroplating with concentrated electrolyte at a temperature of at least about 40° C. Electroplating with electrolytes having Cu2+ concentration of at least about 60 g/L at temperatures of at least about 40° C. results in very fast copper deposition rates, and is particularly well-suited for filling large, high aspect ratio features, such as through-silicon vias.
摘要翻译： 用于在半导体衬底上填充凹陷特征的电镀设备包括电解质浓缩器，其被配置用于浓缩具有Cu 2+离子的电解质，以形成在20℃下已经过饱和的浓缩电解质溶液。电解质保持在高于 20℃，例如至少约40℃。该设备还包括浓缩电解质储存器和电镀池，其中电镀单元被配置为在至少约40℃的温度下用浓缩电解质电镀。 在至少约40℃的温度下，具有Cu2 +浓度至少约60g / L的电解质的电镀导致非常快的铜沉积速率，并且特别适合于填充大的高纵横比特征，例如通过 硅通孔。
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公开(公告)号：US20100155254A1
公开(公告)日：2010-06-24
申请号：US12633219
申请日：2009-12-08
申请人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
发明人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
CPC分类号： C25D17/001 , C25D7/123
摘要： Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.
摘要翻译： 提供了诸如基板，密封圈和接触环组件的方法，装置和各种装置部件，以减少设备中接触区域的污染。 在电镀工艺之后从设备中取出半导体晶片时可能发生污染。 在某些实施方案中，使用具有疏水涂层的基板，例如聚酰胺 - 酰亚胺（PAI）和有时聚四氟乙烯（PTFE）。 此外，接触环组件的接触尖端可以被定位成更远离唇密封的唇缘。 在某些实施方案中，接触环组件和/或唇膏的一部分还包括疏水性涂层。
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