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    Photo detector having coupling capacitor
    22.
    发明授权
    Photo detector having coupling capacitor 有权
    具有耦合电容的光电检测器

    公开(公告)号：US08742316B2

    公开(公告)日：2014-06-03

    申请号：US12942338

    申请日：2010-11-09

    Applicant: Kisoo Kim ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

    Inventor： Kisoo Kim ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

    IPC: G01J1/44

    CPC classification number: G01J1/46

    Abstract: Provided is a photo detector. The photo detector includes: an avalanche photodiode; a bias circuit supplying a bias voltage to one end of the avalanche photodiode; a detection circuit connected to the other end of the avalanche photodiode and detecting a photoelectric current occurring in the avalanche photodiode; and a coupling capacitor connected to the one end or the other end of the avalanche photodiode and supplying a coupling voltage to drive the avalanche photodiode in a Geiger mode.

    Abstract translation: 提供了一种光电检测器。 光电检测器包括：雪崩光电二极管; 将偏置电压提供给雪崩光电二极管的一端的偏置电路; 连接到雪崩光电二极管的另一端并检测在雪崩光电二极管中出现的光电流的检测电路; 以及耦合电容器，其连接到雪崩光电二极管的一端或另一端并提供耦合电压以以盖革模式驱动雪崩光电二极管。

    SEMICONDUCTOR OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME
    23.
    发明申请
    SEMICONDUCTOR OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME 有权
    半导体光学器件及其制造方法

    公开(公告)号：US20120281274A1

    公开(公告)日：2012-11-08

    申请号：US13307067

    申请日：2011-11-30

    Applicant: Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

    Inventor： Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

    IPC: H01S5/20 ,  H01L21/04

    CPC classification number: H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

    Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

    Abstract translation: 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

    PHOTO DETECTOR HAVING COUPLING CAPACITOR
    25.
    发明申请
    PHOTO DETECTOR HAVING COUPLING CAPACITOR 有权
    具有耦合电容器的照相检测器

    公开(公告)号：US20110133059A1

    公开(公告)日：2011-06-09

    申请号：US12942338

    申请日：2010-11-09

    Applicant: Kisoo KIM ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

    Inventor： Kisoo KIM ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

    IPC: G01J1/44

    CPC classification number: G01J1/46

    Abstract: Provided is a photo detector. The photo detector includes: an avalanche photodiode; a bias circuit supplying a bias voltage to one end of the avalanche photodiode; a detection circuit connected to the other end of the avalanche photodiode and detecting a photoelectric current occurring in the avalanche photodiode; and a coupling capacitor connected to the one end or the other end of the avalanche photodiode and supplying a coupling voltage to drive the avalanche photodiode in a Geiger mode.

    Abstract translation: 提供了一种光电检测器。 光电检测器包括：雪崩光电二极管; 将偏置电压提供给雪崩光电二极管的一端的偏置电路; 连接到雪崩光电二极管的另一端并检测在雪崩光电二极管中出现的光电流的检测电路; 以及耦合电容器，其连接到雪崩光电二极管的一端或另一端并提供耦合电压以以盖革模式驱动雪崩光电二极管。

    Ridge-type semiconductor laser and method of fabricating the same
    26.
    发明申请
    Ridge-type semiconductor laser and method of fabricating the same 审中-公开
    脊型半导体激光器及其制造方法

    公开(公告)号：US20060018352A1

    公开(公告)日：2006-01-26

    申请号：US11008064

    申请日：2004-12-08

    Applicant: Jung Song ,  Kisoo Kim ,  Yongsoon Baek

    Inventor： Jung Song ,  Kisoo Kim ,  Yongsoon Baek

    IPC: H01S5/00

    CPC classification number: H01S5/22 ,  H01S5/323

    Abstract: A ridge-type semiconductor laser is provided. The ridge-type semiconductor laser includes a pattern for a current inflow path control formed on an active layer and having an opening thereinside controlling a current inflow path with a width W1, and a ridge formed on the pattern for a current inflow path control, with a width W2 greater than W1 and burying the opening with a width W1 and controlling an optical mode. The ridge-type semiconductor laser improves the characteristics of a laser by separately controlling the extent that current is spread in the space, and the extent that optical mode is spread in the space, to maximize the coincidence of the respective space distributions of the current and the optical mode.

    Abstract translation: 提供脊型半导体激光器。 脊型半导体激光器包括形成在有源层上的电流流入路径控制的图形，并且具有用于控制具有宽度W 1的电流流入路径的开口，以及形成在用于电流流入路径控制的图案上的脊， 其宽度W 2大于W 1并且将宽度W 1的开口埋入并控制光学模式。 脊型半导体激光器通过分别控制电流在空间中扩展的程度以及光学模式在空间中扩展的程度来改善激光器的特性，以使电流的各个空间分布的一致性最大化 光学模式。

    WAVELENGTH TUNABLE EXTERNAL CAVITY LASER GENERATING DEVICE
    28.
    发明申请
    WAVELENGTH TUNABLE EXTERNAL CAVITY LASER GENERATING DEVICE 有权
    波长管外部腔体激光发生装置

    公开(公告)号：US20120093178A1

    公开(公告)日：2012-04-19

    申请号：US13016238

    申请日：2011-01-28

    Applicant: Hyun Soo KIM ,  Ki-Hong YOON ,  Kisoo KIM ,  Byung-Seok CHOI ,  O-Kyun Kwon

    Inventor： Hyun Soo KIM ,  Ki-Hong YOON ,  Kisoo KIM ,  Byung-Seok CHOI ,  O-Kyun Kwon

    IPC: H01S3/10

    CPC classification number: H01S5/142 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/028 ,  H01S5/1212 ,  H01S5/1215 ,  H01S5/125 ,  H01S5/22 ,  H01S5/34306

    Abstract: Provided is a wavelength tunable external cavity laser generating device. The wavelength tunable external cavity laser generating devices includes: an optical amplifier, a comb reflector, and an optical signal processor connected in series on a first substrate; and an external wavelength tunable reflector disposed on a second substrate adjacent to the first substrate and connected to the optical amplifier, wherein the comb reflector includes: a waveguide disposed on the first substrate; a first diffraction grating disposed at one end of the waveguide adjacent to the optical amplifier; and a second diffraction grating disposed at the other end of the waveguide adjacent to the optical signal processor, wherein the optical amplifier, the comb reflector, and the optical signal processor constitute a continuous waveguide.

    Abstract translation: 提供了一种波长可调外腔激光产生装置。 所述波长可调外腔激光产生装置包括：串联在第一基板上的光放大器，梳状反射器和光信号处理器; 以及外部波长可调谐反射器，其设置在与所述第一基板相邻并且连接到所述光学放大器的第二基板上，其中所述梳状反射器包括：布置在所述第一基板上的波导; 设置在与光放大器相邻的波导的一端的第一衍射光栅; 以及第二衍射光栅，其设置在与所述光信号处理器相邻的所述波导的另一端处，其中所述光放大器，所述梳状反射器和所述光信号处理器构成连续波导。

    Resonator of hybrid laser diode
    29.
    发明授权
    Resonator of hybrid laser diode 失效
    混合激光二极管谐振器

    公开(公告)号：US07995625B2

    公开(公告)日：2011-08-09

    申请号：US12499069

    申请日：2009-07-07

    Applicant: Young Ahn Leem ,  Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

    Inventor： Young Ahn Leem ,  Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

    IPC: H01S3/098 ,  H01S3/03 ,  H01S3/082

    CPC classification number: H01S5/026 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0655 ,  H01S5/1014 ,  H01S5/1025 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/125

    Abstract: Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide.

    Abstract translation: 提供了一种混合激光二极管的谐振器。 谐振器包括：包括混合波导，多模波导和单模波导串联连接的半导体层的基板; 复合半导体波导，设置在半导体层的混合波导上，在化合物半导体波导的一端具有锥形耦合结构，锥形耦合结构部分地与多模波导重叠; 以及设置在单模波导的一端的反射部。 多模波导具有比混合波导窄的宽度，并且单模波导具有比多模波导窄的宽度。

    EXTERNAL CAVITY LASER LIGHT SOURCE
    30.
    发明申请
    EXTERNAL CAVITY LASER LIGHT SOURCE 有权
    外部光源激光光源

    公开(公告)号：US20100238962A1

    公开(公告)日：2010-09-23

    申请号：US12541561

    申请日：2009-08-14

    Applicant: Su Hwan Oh ,  Kihong Yoon ,  Kisoo Kim ,  Dae Kon Oh

    Inventor： Su Hwan Oh ,  Kihong Yoon ,  Kisoo Kim ,  Dae Kon Oh

    IPC: H01S5/14 ,  H01S5/026 ,  H01S5/34

    CPC classification number: H01S5/14 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/164 ,  H01S5/2231

    Abstract: Provided is an external cavity laser light source. The light source includes a substrate, an optical waveguide, and a current blocking layer. The optical waveguide includes a passive waveguide layer, a lower clad layer, an active layer, and an upper clad layer that are sequentially stacked on the substrate and is divided into regions including a linear active waveguide region, a bent active waveguide region, a tapered waveguide region, and a window region. The current blocking layer was formed an outside of the active layer to reduce leakage current. The linear and bent active waveguide regions have a buried heterostructure (BH), and the tapered waveguide region and the window region have a buried ridge stripe (BRS) structure. The passive waveguide layer a width substantially equal to a maximal width of the tapered waveguide region at least in the bent active waveguide region, the tapered waveguide region, and the window region.

    Abstract translation: 提供外腔激光光源。 光源包括基板，光波导和电流阻挡层。 光波导包括顺序层叠在基板上的无源波导层，下包层，有源层和上覆层，并分为包括线性有源波导区域，弯曲有源波导区域，锥形 波导区域和窗口区域。 电流阻挡层形成在有源层的外侧，以减少泄漏电流。 线性和弯曲的有源波导区域具有掩埋异质结构（BH），并且锥形波导区域和窗口区域具有掩埋脊条纹（BRS）结构。 至少在弯曲的有源波导区域，锥形波导区域和窗口区域中，无源波导层的宽度基本上等于锥形波导区域的最大宽度。

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