Abstract:
A composite memory device including discrete memory devices and a bridge device for controlling the discrete memory devices. The bridge device has memory organized as banks, where each bank is configured to have a virtual page size that is less than the maximum physical size of the page buffer. Therefore only a segment of data corresponding to the virtual page size stored in the page buffer is transferred to the bank. The virtual page size of the banks is provided in a virtual page size (VPS) configuration command having an ordered structure where the position of VPS data fields containing VPS configuration codes in the command correspond to different banks which are ordered from a least significant bank to a most significant bank. The VPS configuration command is variable in size, and includes only the VPS configuration codes for the highest significant bank being configured and the lower significant banks.
Abstract:
At least one substitute path is provided in place of a plurality of existing paths of a network to reallocate traffic carried by the plurality of existing paths. The total bandwidth needed to carry the traffic of the plurality of existing paths is determined. A proposed route is generated from the available links in the network. A portion of the bandwidth of a proposed route may be allocated to the needed bandwidth when the bandwidth of a proposed route is greater than or equal to the needed bandwidth. When the bandwidth of the proposed route is less than the needed bandwidth, at least one further route is generated, and the needed bandwidth is divided among the proposed route and the at least one further route such that a minimum number of further routes are generated.
Abstract:
In a nonvolatile memory, less than a full block maybe erased as one or more pages. A select voltage is applied through pass transistors to each of plural selected wordlines and an unselect voltage is applied through pass transistor to each of plural unselected wordlines of a selected block. A substrate voltage is applied to the substrate of the selected block. A common select voltage may be applied to each selected wordline and the common unselect voltage may be applied to each unselected wordline. Select and unselect voltages may be applied to any of the wordlines of a select block. A page erase verify operation may be applied to a block having plural erased pages and plural nonerased pages.
Abstract:
A device for enabling a local area network wiring structure to simultaneously carry digital data and analog telephone signals on the same transmission medium. It is particularly applicable to a network in star topology, in which remote data units (e.g. personal computers) are each connected to a hub through a cable comprising at least two pairs of conductors, providing a data communication path in each direction. Modules at each end of the cable provide a phantom path for telephony (voice band) signals between a telephone near the data set and a PBX, through both conductor pairs in a phantom circuit arrangement. All such communication paths function simultaneously and without mutual interference. The modules comprise simple and inexpensive passive circuit components.
Abstract:
A semiconductor memory device, including: a memory cell connected to a first bitline and associated with a second bitline; a sense amplifier, including a first input/output node and a second input/output node; and an isolator connected to the bitlines and to the input/output nodes, the isolator being configured to carry out bitline isolation during a refresh operation of the memory cell, where the bitline isolation includes electrically disconnecting the first bitline from the first input/output node and electrically disconnecting the second bitline from the second input/output node, followed by: electrically re-connecting the first bitline to the first input/output node while the second bitline remains electrically disconnected from the second input/output node.
Abstract:
A channel has a first and a second end. The first end of the channel is coupled to a transmitter. The channel is capable of transmitting symbols selected from a symbol set from the first end to the second end. The channel exhibits incomplete error introduction properties. A code comprises a set of code words. The elements of the set of code words are one or more code symbols long. The code symbols are members of the symbol set. The minimum modified Hamming separation between the elements of the set of code words in light of the error introduction properties of the channel is greater than the minimum Hamming distance between the elements of the set of code words. A memory device, a method of using the channel, and a method of generating the code are also described.
Abstract:
A delay locked loop includes initialization circuitry that ensures that a DLL is initialized to an operating point that is not to close to either end of a delay vs. control voltage characteristic. The initialization circuitry forces the DLL to initially search for a lock point starting from an initial delay, the delay is varied in one direction, forcing the DLL to skip the first lock point. The initialization circuitry only allows the DLL to vary the delay of the voltage controlled delay loop in the one direction from the initial delay until the operating point is reached.
Abstract:
In an integrated circuit (IC) adapted for use in a stack of interconnected ICs, interrupted through-silicon-vias (TSVs) are provided in addition to uninterrupted TSVs. The interrupted TSVs provide signal paths other than common parallel paths between the ICs of the stack. This permits IC identification schemes and other functionalities to be implemented using TSVs, without requiring angular rotation of alternate ICs of the stack.
Abstract:
A clock applying circuit for a synchronous memory is comprised of a clock input for receiving a clock input signal, apparatus connected to the synchronous memory for receiving a driving clock signal, and a tapped delay line for receiving the clock input signal for delivering the clock driving signal to the synchronous memory in synchronism with but delayed from the clock input signal, the delay being a small fraction of the clock period of the clock input signal.
Abstract:
A plurality of memory devices of mixed type (e.g., DRAMs, SRAMs, MRAMs, and NAND-, NOR- and AND-type Flash memories) are serially interconnected. Each device has device type information on its device type. A specific device type (DT) and a device identifier (ID) contained in a serial input (SI) as a packet are fed to one device of the serial interconnection. The device determines whether the fed DT matches the DT of the device. In a case of match, a calculator included in the device performs calculation to generate an ID accompanying the fed DT for another device and the fed ID is latched in a register of the device. In a case of no-match, the ID generation is skipped and no ID is generated for another device. The DT is combined with the generated or the received ID depending on the device type match determination. The combined DT and ID is as a packet transferred to a next device. Such a device type match determination and ID generation or skip are performed in all devices of the serial interconnection. With reference to device type provided to the interconnected devices, IDs are sequentially generated. The SI containing the DT, the ID and an ID generation command is transmitted in a packet basis to a next device.