Abstract:
Spatio-temporal light field cameras that can be used to capture the light field within its spatio temporally extended angular extent. Such cameras can be used to record 3D images, 2D images that can be computationally focused, or wide angle panoramic 2D images with relatively high spatial and directional resolutions. The light field cameras can be also be used as 2D/3D switchable cameras with extended angular extent. The spatio-temporal aspects of the novel light field cameras allow them to capture and digitally record the intensity and color from multiple directional views within a wide angle. The inherent volumetric compactness of the light field cameras make it possible to embed in small mobile devices to capture either 3D images or computationally focusable 2D images. The inherent versatility of these light field cameras makes them suitable for multiple perspective light field capture for 3D movies and video recording applications.
Abstract:
Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure in order to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency.
Abstract:
Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure in order to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency.
Abstract:
A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.
Abstract:
A multilayer light emitting device having a plurality of low Si—H bonding dielectric layers is disclosed for improved p-GaN contact performance. Improved p-side contact resistance is provided using one or more bonding, via or passivation layers in a multilayer light emitting structure by the use of processes and dielectric materials and precursors that provide dielectric layers with a hydrogen content of less than 13 at. %.
Abstract:
Methods for virtual clothes fitting when shopping online are presented. The online shopper prepares and keeps a 3D volumetric scan or point cloud of their body. Shoppers upload their 3D volumetric body scan to an online store. The online store stores the 3D volumetric scan of the clothing it offers for sale on their online shop. The online store has the processing capabilities to fit the 3D body scan provided by the shopper with the 3D volumetric scan of clothing it offers for sale on their online shop. Once the 3D volumetric data of the offered clothing item is digitally fitted by the online store on the 3D volumetric scan of the offered clothing item, the 3D volumetric data of the offered clothing fitted on the created “Virtual Mannequin” of the shopper is sent back to shopper to view and examine. On the screen of their computing platform, the shopper can then view and examine 3D images received (uploaded) from the online shop of the selected clothing item fitted on their virtual mannequin and make a buy decision.
Abstract:
A method and apparatus for achieving selective polarization states of emitted visible or other light in a stacked multicolor emissive display device by utilizing nonpolar, semipolar or strained c-plane crystallographic planes of semiconductor materials for light emitting structures within an electronic emissive display device.
Abstract:
Methods and systems for light field image encoding and decoding are disclosed. According to some embodiments, scene metadata and input light field images associated with a scene are received. A first encoding operation is performed on the scene metadata and input light field images to generate reference images, reference disparity information, and an order of reference views. A second encoding operation is performed based on the reference images and reference disparity information to output light field encoded data. The light field encoded data includes the encoded reference images, the encoded reference disparity information, and the order of reference views. The light field encoded data is transmitted.
Abstract:
A wearable display system that includes an optical lens element in optical communication with an electronic display device for displaying images to a viewer. An eye position sensor, head position or pose sensor, and gaze/head pose prediction means are provided. The gaze/head pose prediction means is configured to process a sensed position of the viewer's eyes as one or more observation vectors through a sequentially updated model of the HVS to predict and estimate (multiple frames) the gaze parameters (direction and depth or pose). A host processor is configured to input and output display data, which may comprise light field data, to and from the system to a Cloud processor to provide displayed images to the viewer wherein the displayed images are optimized to match the viewer's human visual system.
Abstract:
Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.