公开(公告)号：US09443727B2

公开(公告)日：2016-09-13

申请号：US14459120

申请日：2014-08-13

Applicant: Ostendo Technologies, Inc.

Inventor： Vitali Soukhoveev ,  Vladimir Ivantsov ,  Benjamin A. Haskell ,  Hussein S. El-Ghoroury ,  Alexander Syrkin

IPC: H01L21/02 ,  H01L29/20 ,  C30B25/18 ,  H01L29/04 ,  H01L29/16 ,  H01L29/167 ,  C30B23/02 ,  C30B29/40

CPC classification number: H01L21/02381 ,  C30B23/025 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/2003

Abstract: A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.

Abstract translation: 已经开发了一种克服现有技术在半极性III族氮化物模板，膜和材料的性能和制造中的缺陷的方法。 已经开发了一种新型氢化物气相外延变体，其提供了纳米级周期性结构的受控生长。 已经利用生长方法来生长具有不同组成的交替AlGaN层的多周期堆叠。 将这种周期性结构应用于半极性III-氮化物产生了优异的材料的结构和形态特性，包括在生长材料的自由表面处的穿透位错密度和表面粗糙度降低。 这种增强能够制造优质的半极化III族氮化物电子和光电器件，包括但不限于晶体管，发光二极管和激光二极管。

公开(公告)号：US09023673B1

公开(公告)日：2015-05-05

申请号：US13917373

申请日：2013-06-13

Applicant: Ostendo Technologies, Inc.

Inventor： Lisa Shapovalov ,  Oleg Kovalenkov ,  Vladimir Ivantsov ,  Vitali Soukhoveev ,  Alexander Syrkin ,  Alexander Usikov

IPC: H01L21/00 ,  H01L21/02

CPC classification number: H01L21/0254 ,  H01L21/02422 ,  H01L21/02458

Abstract: A method to grow single phase group III-nitride articles including films, templates, free-standing substrates, and bulk crystals grown in semi-polar and non-polar orientations is disclosed. One or more steps in the growth process includes the use of additional free hydrogen chloride to eliminate undesirable phases, reduce surface roughness, and increase crystalline quality. The invention is particularly well-suited to the production of single crystal (11.2) GaN articles that have particular use in visible light emitting devices.

Abstract translation: 公开了一种生长单相III族氮化物制品的方法，包括膜，模板，独立底材和以半极性和非极性取向生长的本体晶体。 生长过程中的一个或多个步骤包括使用额外的游离氯化氢来消除不需要的相，降低表面粗糙度和提高结晶质量。 本发明特别适用于制造在可见光发射器件中特别有用的单晶（11.2）GaN制品。

公开(公告)号：US08992684B1

公开(公告)日：2015-03-31

申请号：US13918643

申请日：2013-06-14

Applicant: Ostendo Technologies, Inc.

Inventor： Oleg Kovalenkov ,  Vitali Soukhoveev ,  Alexander Syrkin ,  Vladimir Sizov

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/34 ,  C30B25/14 ,  C30B35/00

CPC classification number: C30B35/00 ,  C30B25/02 ,  C30B25/14 ,  C30B29/403

Abstract: The geometry of transition from cylindrical to rectangular shape through the conical part in hydride vapor phase epitaxial (HVPE) systems for deposition of III-nitride films is disclosed. It is used to ensure the laminar gas flow inside the growth zone of the system. For the velocity of flow within the atmospheric pressure reactor to be sufficient, the precursors are injected through the narrow diameter tubing injectors. The quartz reactor geometry is introduced to control the transition from jet to laminar flow.

Abstract translation: 公开了用于沉积III族氮化物膜的氢化物气相外延（HVPE）系统中从圆柱形到矩形形状通过锥形部分的几何形状。 用于确保系统生长区内层流气流。 为了使大气压力反应器内的流速足以使前体通过狭窄的管道注射器注入。 引入石英反应器几何形状以控制从射流到层流的过渡。

公开(公告)号：US20170170363A1

公开(公告)日：2017-06-15

申请号：US15377775

申请日：2016-12-13

Applicant: Ostendo Technologies, Inc.

Inventor： Anna Volkova ,  Vladimir Ivantsov ,  Alexander Syrkin ,  Benjamin A. Haskell ,  Hussein S. El-Ghoroury

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/18 ,  H01L33/08 ,  H01L27/15 ,  H01J1/308 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/109 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01J1/308 ,  C30B29/406 ,  C30B29/607 ,  C30B29/62 ,  C30B29/66 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/20 ,  H01L31/035236 ,  H01L31/035281 ,  H01L31/109 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  Y02E10/544

Abstract: A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.

公开(公告)号：US11322652B2

公开(公告)日：2022-05-03

申请号：US15377775

申请日：2016-12-13

Applicant: Ostendo Technologies, Inc.

Inventor： Anna Volkova ,  Vladimir Ivantsov ,  Alexander Syrkin ,  Benjamin A. Haskell ,  Hussein S. El-Ghoroury

IPC: H01L31/18 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L21/20 ,  H01L33/00 ,  H01L33/08 ,  H01L33/06 ,  H01L31/0352 ,  H01L31/109 ,  H01L21/02 ,  C30B29/66 ,  C30B29/62 ,  C30B29/40 ,  C30B29/60

Abstract: A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.

公开(公告)号：US09577143B1

公开(公告)日：2017-02-21

申请号：US13917408

申请日：2013-06-13

Applicant: Ostendo Technologies, Inc.

Inventor： Lisa Shapovalov ,  Oleg Kovalenkov ,  Vladimir Ivantsov ,  Alexander Syrkin

IPC: C30B25/02 ,  C30B25/14 ,  H01L33/00 ,  C30B25/16 ,  C23C16/455

CPC classification number: H01L33/0075 ,  C23C16/455 ,  C23C16/45504 ,  C23C16/45519 ,  C30B23/02 ,  C30B25/14 ,  C30B25/16 ,  C30B25/165 ,  C30B29/40

Abstract: A backflow liner in an epitaxial growth system is provided in order to control gas flow and protect the surface of substrates throughout an epitaxial growth cycle. The backflow liner provides critical protection during the warming time prior to substrate pre-treatment, while the growth environment reaches steady state condition between the pre-treatment and the growth process, during pauses between the layer depositions in case of multilayer structure growth, and during the cooling process. The direction of the gas flow through the backflow liner is counter to the deposition gas flows directed from the source end of the growth system. The backflow liner is therefore designed to shape the flow of gases to prevent formation of the vortex-type streams in the growth system that may negatively affect the growth process.

Abstract translation: 提供外延生长系统中的回流衬垫以便在整个外延生长循环中控制气体流动并保护衬底的表面。 回流衬垫在衬底预处理之前的加热时间期间提供关键保护，而在预处理和生长过程之间的生长环境达到稳态条件下，在多层结构生长的情况下在层间沉积期间和在 冷却过程。 通过回流衬套的气体流动的方向与从生长系统的源端引导的沉积气体流相反。 因此，回流衬套被设计成塑造气体的流动，以防止在生长系统中形成可能对生长过程产生负面影响的涡流型流。

公开(公告)号：US20140353685A1

公开(公告)日：2014-12-04

申请号：US14459120

申请日：2014-08-13

Applicant: Ostendo Technologies, Inc.

Inventor： Vitali Soukhoveev ,  Vladimir Ivantsov ,  Benjamin A. Haskell ,  Hussein S. El-Ghoroury ,  Alexander Syrkin

IPC: H01L21/02 ,  H01L29/167 ,  H01L29/16 ,  H01L29/04 ,  H01L29/20

CPC classification number: H01L21/02381 ,  C30B23/025 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/2003

Abstract: A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.

Abstract translation: 已经开发了一种克服现有技术在半极性III族氮化物模板，膜和材料的性能和制造中的缺陷的方法。 已经开发了一种新型氢化物气相外延变体，其提供了纳米级周期性结构的受控生长。 已经利用生长方法来生长具有不同组成的交替AlGaN层的多周期堆叠。 将这种周期性结构应用于半极性III-氮化物产生了优异的材料的结构和形态特性，包括在生长材料的自由表面处的穿透位错密度和表面粗糙度降低。 这种增强能够制造优质的半极化III族氮化物电子和光电器件，包括但不限于晶体管，发光二极管和激光二极管。