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    Resistive Memory Structure with Buffer Layer
    21.
    发明申请
    Resistive Memory Structure with Buffer Layer 审中-公开
    具有缓冲层的电阻式存储器结构

    公开(公告)号：US20110189819A1

    公开(公告)日：2011-08-04

    申请号：US13083450

    申请日：2011-04-08

    Applicant: Wei-Chih Chien ,  Kuo-Pin Chang ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    Inventor： Wei-Chih Chien ,  Kuo-Pin Chang ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    IPC: H01L21/8239

    CPC classification number: H01L45/04 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625 ,  H01L45/1633 ,  Y10S438/90

    Abstract: A memory device comprises first and second electrodes with a memory element and a buffer layer located between and electrically coupled to them. The memory element comprises one or more metal oxygen compounds. The buffer layer comprises at least one of an oxide and a nitride. Another memory device comprises first and second electrodes with a memory element and a buffer layer, having a thickness of less than 50 Å, located between and electrically coupled to them. The memory comprises one or more metal oxygen compounds. An example of a method of fabricating a memory device includes forming first and second electrodes. A memory, located between and electrically coupled to the first and the second electrodes, is formed; the memory comprises one or more metal oxygen compounds and the buffer layer comprises at least one of an oxide and a nitride.

    Abstract translation: 存储器件包括具有存储元件的第一和第二电极以及位于它们之间并与之电耦合的缓冲层。 记忆元件包括一种或多种金属氧化合物。 缓冲层包括氧化物和氮化物中的至少一种。 另一个存储器件包括具有存储元件和缓冲层的第一和第二电极，其厚度小于50，位于它们之间并与之电耦合。 记忆体包括一种或多种金属氧化合物。 制造存储器件的方法的一个例子包括形成第一和第二电极。 形成位于第一和第二电极之间并电耦合到第一和第二电极的存储器; 存储器包括一种或多种金属氧化合物，并且缓冲层包括氧化物和氮化物中的至少一种。

    Resistive memory structure with buffer layer
    23.
    发明授权
    Resistive memory structure with buffer layer 有权
    具有缓冲层的电阻式存储器结构

    公开(公告)号：US07943920B2

    公开(公告)日：2011-05-17

    申请号：US12836304

    申请日：2010-07-14

    Applicant: Wei-Chih Chien ,  Kuo-Pin Chang ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    Inventor： Wei-Chih Chien ,  Kuo-Pin Chang ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    IPC: H01L29/04

    CPC classification number: H01L45/04 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625 ,  H01L45/1633 ,  Y10S438/90

    Abstract: A memory device comprises first and second electrodes with a memory element and a buffer layer located between and electrically coupled to them. The memory element comprises one or more metal oxygen compounds. The buffer layer comprises at least one of an oxide and a nitride. Another memory device comprises first and second electrodes with a memory element and a buffer layer, having a thickness of less than 50 Å, located between and electrically coupled to them. The memory comprises one or more metal oxygen compounds. An example of a method of fabricating a memory device includes forming first and second electrodes. A memory, located between and electrically coupled to the first and the second electrodes, is formed; the memory comprises one or more metal oxygen compounds and the buffer layer comprises at least one of an oxide and a nitride.

    Abstract translation: 存储器件包括具有存储元件的第一和第二电极以及位于它们之间并与之电耦合的缓冲层。 记忆元件包括一种或多种金属氧化合物。 缓冲层包括氧化物和氮化物中的至少一种。 另一个存储器件包括具有存储元件和缓冲层的第一和第二电极，其厚度小于50，位于它们之间并与之电耦合。 记忆体包括一种或多种金属氧化合物。 制造存储器件的方法的一个例子包括形成第一和第二电极。 形成位于第一和第二电极之间并电耦合到第一和第二电极的存储器; 存储器包括一种或多种金属氧化合物，并且缓冲层包括氧化物和氮化物中的至少一种。

    Method for making chip resistor components
    24.
    发明授权
    Method for making chip resistor components 有权
    制造片式电阻器元件的方法

    公开(公告)号：US07882621B2

    公开(公告)日：2011-02-08

    申请号：US12040234

    申请日：2008-02-29

    Applicant: Mu-Yuan Chen ,  Wen-Feng Wu ,  Chi-Pin Chang ,  Kao-Po Chien

    Inventor： Mu-Yuan Chen ,  Wen-Feng Wu ,  Chi-Pin Chang ,  Kao-Po Chien

    IPC: H01C17/28

    CPC classification number: H01C17/06 ,  H01C17/006 ,  Y10T29/49082 ,  Y10T29/49099 ,  Y10T29/49101 ,  Y10T29/49124

    Abstract: A method for making chip resistor components includes: (a) forming a plurality of first and second notches in a substrate so as to form resistor-forming strips; (b) forming pairs of upper and lower electrodes on each of the resistor-forming strips; (c) forming a resistor film on each of the resistor-forming strips; (d) forming an insulator layer on the resistor film; (e) forming a hole pattern in the insulator layer and the resistor film; (f) forming an insulating shield layer on the insulator layer; (g) cleaving the substrate along the first notches so as to form a plurality of strip-like semi-finished products; (h) forming a pair of side electrodes on two opposite sides of each of the semi-finished products; and (i) cleaving each of the semi-finished products.

    Abstract translation: 一种制造芯片电阻器组件的方法包括：（a）在衬底中形成多个第一和第二凹口，以形成电阻器形成条; （b）在每个电阻器形成条上形成一对上电极和下电极; （c）在每个电阻器形成条上形成电阻膜; （d）在电阻膜上形成绝缘体层; （e）在绝缘体层和电阻膜中形成孔图案; （f）在绝缘体层上形成绝缘屏蔽层; （g）沿着所述第一凹口切割所述基板，以形成多个条状半成品; （h）在每个半成品的两个相对侧上形成一对侧电极; 和（i）切割每个半成品。

    SYSTEM AND METHOD OF RECORDING MEASUREMENT DATA
    25.
    发明申请
    SYSTEM AND METHOD OF RECORDING MEASUREMENT DATA 审中-公开
    记录测量数据的系统和方法

    公开(公告)号：US20100286962A1

    公开(公告)日：2010-11-11

    申请号：US12435588

    申请日：2009-05-05

    Applicant: Hsiao-Hsien Chu ,  Shang-Pin Chang ,  Jung-Kun Hsieh

    Inventor： Hsiao-Hsien Chu ,  Shang-Pin Chang ,  Jung-Kun Hsieh

    IPC: G06F17/40

    CPC classification number: G05B21/02

    Abstract: A measurement data recording system includes a microprocessor, a first switch and a second switch. The first switch sends a trigger signal to trigger a digital measurement instrument sends a measurement data. The microprocessor detects the trigger signal aroused by the first switch, receives the measurement data, and records it into the memory card. The microprocessor also detects a trigger signal aroused by the second switch and deletes the measurement data in the memory card. A method for recording the measurement data includes steps of detecting the trigger signal, detecting a status of the memory card, detecting a status of a data file in the memory card, receiving the measurement data and recording it into the data file while the trigger signal being aroused by the first switch, and deleting the measurement data recorded in the data file while the trigger signal being aroused by the second switch.

    Abstract translation: 测量数据记录系统包括微处理器，第一开关和第二开关。 第一个开关发送触发信号来触发数字测量仪器发送测量数据。 微处理器检测第一开关引起的触发信号，接收测量数据，并将其记录到存储卡中。 微处理器还检测由第二开关引起的触发信号，并删除存储卡中的测量数据。 记录测量数据的方法包括以下步骤：检测触发信号，检测存储卡的状态，检测存储卡中的数据文件的状态，接收测量数据并将其记录到数据文件中，同时触发信号 由第一开关引起的，并且当触发信号被第二开关激发时，删除记录在数据文件中的测量数据。

    Resistive memory structure with buffer layer
    26.
    发明授权
    Resistive memory structure with buffer layer 有权
    具有缓冲层的电阻式存储器结构

    公开(公告)号：US07777215B2

    公开(公告)日：2010-08-17

    申请号：US12176183

    申请日：2008-07-18

    Applicant: Wei-Chih Chien ,  Kuo-Pin Chang ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    Inventor： Wei-Chih Chien ,  Kuo-Pin Chang ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    IPC: H01L47/00

    CPC classification number: H01L45/04 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625 ,  H01L45/1633 ,  Y10S438/90

    Abstract: A memory device comprises first and second electrodes with a memory element and a buffer layer located between and electrically coupled to them. The memory element comprises one or more metal oxygen compounds. The buffer layer comprises at least one of an oxide and a nitride. Another memory device comprises first and second electrodes with a memory element and a buffer layer, having a thickness of less than 50 Å, located between and electrically coupled to them. The memory comprises one or more metal oxygen compounds. An example of a method of fabricating a memory device includes forming first and second electrodes. A memory, located between and electrically coupled to the first and the second electrodes, is formed; the memory comprises one or more metal oxygen compounds and the buffer layer comprises at least one of an oxide and a nitride.

    Abstract translation: 存储器件包括具有存储元件的第一和第二电极以及位于它们之间并与之电耦合的缓冲层。 记忆元件包括一种或多种金属氧化合物。 缓冲层包括氧化物和氮化物中的至少一种。 另一个存储器件包括具有存储元件和缓冲层的第一和第二电极，其厚度小于50，位于它们之间并与之电耦合。 记忆体包括一种或多种金属氧化合物。 制造存储器件的方法的一个例子包括形成第一和第二电极。 形成位于第一和第二电极之间并电耦合到第一和第二电极的存储器; 存储器包括一种或多种金属氧化合物，并且缓冲层包括氧化物和氮化物中的至少一种。

    ADDRESSING DEVICE FOR TRANSMITTING SATELLITE TELEVISION SIGNAL
    27.
    发明申请
    ADDRESSING DEVICE FOR TRANSMITTING SATELLITE TELEVISION SIGNAL 有权
    用于发送卫星电视信号的寻址设备

    公开(公告)号：US20100154010A1

    公开(公告)日：2010-06-17

    申请号：US12709660

    申请日：2010-02-22

    Applicant: Chieh-Pin CHANG

    Inventor： Chieh-Pin CHANG

    IPC: H04N7/20

    CPC classification number: H04N7/163 ,  H04N21/4524 ,  H04N21/4623 ,  H04N21/6143

    Abstract: An addressing device for transmitting satellite TV signal is electrically connected with a satellite down-converter and at least one STB installed at a subscriber end. When the subscriber activates the STB for playing satellite TV channel programs, the satellite down-converter receives satellite signals provide by a satellite system end and processes the satellite signals to generate baseband satellite TV signal for input into the addressing device. Next, the addressing device receives GPS signal indicating the position where it is installed and then addresses the GPS signal, further executing digital security processes to converting the area address into an address signal having the same transmission frequency as that of the baseband satellite TV signal. Finally, the address signal is mixed with the baseband satellite TV signal for output to the STB.

    Abstract translation: 用于发送卫星TV信号的寻址装置与卫星下变频器和安装在用户端的至少一个STB电连接。 当用户激活STB用于播放卫星电视频道节目时，卫星下变频器接收由卫星系统端提供的卫星信号，并处理卫星信号以产生用于输入到寻址装置的基带卫星TV信号。 接下来，寻址装置接收指示其安装位置的GPS信号，然后寻址GPS信号，进一步执行数字安全处理，将区域地址转换成具有与基带卫星TV信号相同的发送频率的地址信号。 最后，地址信号与基带卫星电视信号混合，输出到STB。

    SWINGING APPARATUS AND ENERGY HARVESTER USING THE SAME
    30.
    发明申请
    SWINGING APPARATUS AND ENERGY HARVESTER USING THE SAME 有权
    使用相同的扳机和能量收割机

    公开(公告)号：US20100083746A1

    公开(公告)日：2010-04-08

    申请号：US12420166

    申请日：2009-04-08

    Applicant: Chung-De Chen ,  Yu-Jen Wang ,  Chien Li ,  Shih-Hao Wang ,  Pin Chang

    Inventor： Chung-De Chen ,  Yu-Jen Wang ,  Chien Li ,  Shih-Hao Wang ,  Pin Chang

    IPC: B60C23/02 ,  F03G7/08

    CPC classification number: H02K35/02

    Abstract: A swinging apparatus comprising an energy provider and a swinging mechanism disposed thereon. By means of adjusting the size and shape of the swinging mechanism and adjusting a distance between the swinging mechanism and the energy provider so as to control the ratio of the distance between the swinging mechanism and the energy provider to a characteristic value corresponding to the swing mechanism in a range between 4 and 0.25, the swinging frequency of the swinging mechanism may be adjusted automatically to comply with the variation of the motion frequency of the energy provider. The present invention further provides an energy harvester to work with the swinging apparatus and a coil to generate an induced current for power generation during the swing of the swing mechanism. In the present invention, the natural frequency of the swing mechanism may be adjusted according to the rotational velocity of the energy provider.

    Abstract translation: 一种摆动装置，包括能量供应器和设置在其上的摆动机构。 通过调节摆动机构的尺寸和形状并调节摆动机构与能量提供者之间的距离，以便控制摆动机构与能量提供者之间的距离与对应于摆动机构的特性值的比率 在4和0.25之间的范围内，可以自动调节摆动机构的摆动频率以符合能量提供者的运动频率的变化。 本发明还提供一种与摆动装置一起工作的能量收集器和一个线圈，用于在摆动机构摆动期间产生用于发电的感应电流。 在本发明中，摆动机构的固有频率可以根据能量提供者的旋转速度进行调节。

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