公开(公告)号：US5939744A

公开(公告)日：1999-08-17

申请号：US953559

申请日：1997-10-17

申请人： Tsuyoshi Horikawa ,  Yoshikazu Tsunemine ,  Takeharu Kuroiwa ,  Tetsuro Makita ,  Noboru Mikami

发明人： Tsuyoshi Horikawa ,  Yoshikazu Tsunemine ,  Takeharu Kuroiwa ,  Tetsuro Makita ,  Noboru Mikami

IPC分类号： H01G4/33 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/105 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L27/1085 ,  H01L28/55

摘要： In a thin film capacitor of a random access memory including a lower electrode, a dielectric film and an upper electrode, generation of defects in the dielectric film is suppressed. In another way, impurity diffusion into the dielectric film is prevented. In still another way, lattice matching of the dielectric film and the electrodes is realized. Thus, a reduced dielectric constant of the capacitor is prevented, and a quality of the semiconductor device is increased.

摘要翻译： 在包括下电极，电介质膜和上电极的随机存取存储器的薄膜电容器中，抑制了电介质膜中缺陷的产生。 换句话说，阻止了杂质向电介质膜的扩散。 另一方面，实现了电介质膜和电极的晶格匹配。 因此，防止了电容器的介电常数降低，并且提高了半导体器件的质量。

公开(公告)号：US5882410A

公开(公告)日：1999-03-16

申请号：US115991

申请日：1998-07-15

申请人： Takaaki Kawahara ,  Mikio Yamamuka ,  Tetsuro Makita ,  Tsuyoshi Horikawa ,  Akimasa Yuuki ,  Teruo Shibano

发明人： Takaaki Kawahara ,  Mikio Yamamuka ,  Tetsuro Makita ,  Tsuyoshi Horikawa ,  Akimasa Yuuki ,  Teruo Shibano

IPC分类号： C23C16/40 ,  C23C16/448 ,  C23C16/52 ,  H01L21/02 ,  H01L21/314 ,  C23C16/00

CPC分类号： H01L28/56 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/52 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/02271

摘要： There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.

公开(公告)号：US20110076038A1

公开(公告)日：2011-03-31

申请号：US12711728

申请日：2010-02-24

申请人： Tsutomu NAKAMINATO ,  Tsuyoshi Horikawa

发明人： Tsutomu NAKAMINATO ,  Tsuyoshi Horikawa

IPC分类号： G03G15/00

CPC分类号： H04N1/00891 ,  G03G15/5004 ,  H04N1/00885 ,  H04N1/00904

摘要： A power saving processing apparatus that includes a processing unit, an output unit and a transition unit is provided. The processing unit is configured to transition from a first state where power is supplied to a second state where power supply is restricted, executes a first process required for such transition before transition from the first state to the second state, and executes a second process to output a first signal after executing the first process. The output unit outputs a second signal after receiving the first signal output from the processing unit, and outputs the second signal when not receiving the first signal output from the processing unit within a predetermined time period after a predetermined time after the first process starts. The transition unit transitions the processing unit to the second state after receiving the second signal output from the output unit.

摘要翻译： 提供一种包括处理单元，输出单元和转移单元的省电处理设备。 处理单元被配置为从供电受限的第一状态转换到电源受限的第二状态，在从第一状态转换到第二状态之前执行这种转换所需的第一处理，并执行第二处理 在执行第一处理之后输出第一信号。 输出单元在接收到从处理单元输出的第一信号之后输出第二信号，并且在第一处理开始之后的预定时间之后的预定时间段内未接收到从处理单元输出的第一信号时输出第二信号。 在接收到从输出单元输出的第二信号之后，转移单元将处理单元转换到第二状态。

公开(公告)号：US06780476B2

公开(公告)日：2004-08-24

申请号：US10208845

申请日：2002-08-01

申请人： Tsuyoshi Horikawa

发明人： Tsuyoshi Horikawa

IPC分类号： C23C800

CPC分类号： C23C16/401 ,  C23C16/4485 ,  H01L21/31691

摘要： An object of the present invention is to provide a liquid material for chemical vapor deposition (CVD), a method of forming a film by CVD and a CVD apparatus, capable of achieving film formation of a silicate compound of good quality. A liquid material for CVD includes an organometallic compound, a siloxane compound and an organic solvent for dissolving the organometallic compound and the siloxane compound. If the organometallic compound includes an alcoxyl group (e.g., tertialy-butoxyl group) having a larger number of carbon atoms than a propoxyl group or a &bgr;-diketone group (e.g., 2,2,6,6-tetramethyl-3,5-heptanedionate group), the stability in film formation is improved. As the organic solvent, diethyl ether, tetrahydrofuran, nor-octane, iso-octane and the like may be employed. As the siloxane compound, tri-metoxy-silane having a high degree of solubility in a nonsolar solvent and hexa-methyl-di-siloxane and octa-methyl-cycro-tetra-siloxane both having solubility in a polar solvent may be employed.

摘要翻译： 本发明的目的是提供一种用于化学气相沉积（CVD）的液体材料，通过CVD形成膜的方法和能够实现质量好的硅酸盐化合物的成膜的CVD装置。 用于CVD的液体材料包括有机金属化合物，硅氧烷化合物和用于溶解有机金属化合物和硅氧烷化合物的有机溶剂。 如果有机金属化合物包括具有比丙氧基或β-二酮基团更多碳原子数的烷氧基（例如，叔丁氧基）（例如，2,2,6,6-四甲基-3,5-二 庚二酮基），成膜稳定性提高。 作为有机溶剂，可以使用二乙醚，四氢呋喃，正辛烷，异辛烷等。 作为硅氧烷化合物，可以使用在非极性溶剂中具有溶解性的非极性溶剂和六甲基二硅氧烷和八甲基 - 四氢四硅氧烷中具有高溶解度的三 - 甲氧基 - 硅烷。

公开(公告)号：US06312526B1

公开(公告)日：2001-11-06

申请号：US09440709

申请日：1999-11-16

申请人： Mikio Yamamuka ,  Takaaki Kawahara ,  Masayoshi Tarutani ,  Tsuyoshi Horikawa ,  Shigeru Matsuno ,  Takehiko Sato

发明人： Mikio Yamamuka ,  Takaaki Kawahara ,  Masayoshi Tarutani ,  Tsuyoshi Horikawa ,  Shigeru Matsuno ,  Takehiko Sato

IPC分类号： C23C1604

CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45561 ,  C23C16/4557 ,  C23C16/45589 ,  H01L21/31691

摘要： In the chemical vapor deposition apparatus, a substrate stage for mounting a substrate is provided inside a reaction chamber of the apparatus. A source gas inlet for introducing a source gas and exhaust outlets and for exhausting the source gas are provided. Exhaust outlet valves provided for exhaust outlets are open and shut successively with time. The direction of the flow of source gas relative to the fixed substrate varies with time. The present chemical vapor deposition apparatus allows the improved evenness of film thickness, the composition ratio, and the like within the substrate surface as well as the reduction of particles of foreign substance generated inside the reaction chamber.

摘要翻译： 在化学气相沉积装置中，在装置的反应室内设置用于安装基板的基板台。 提供了用于引入源气体和排气口并用于排出源气体的源气体入口。 为排气口设置的排气阀随时间开启和关闭。 源气体相对于固定基板的流动方向随时间变化。 本化学气相沉积装置允许改善基板表面内的膜厚度，组成比等的均匀性以及反应室内产生的异物颗粒的减少。

公开(公告)号：US06235649B1

公开(公告)日：2001-05-22

申请号：US09444297

申请日：1999-11-22

申请人： Takaaki Kawahara ,  Mikio Yamamuka ,  Tsuyoshi Horikawa ,  Masayoshi Tarutani ,  Takehiko Sato ,  Shigeru Matsuno

发明人： Takaaki Kawahara ,  Mikio Yamamuka ,  Tsuyoshi Horikawa ,  Masayoshi Tarutani ,  Takehiko Sato ,  Shigeru Matsuno

IPC分类号： H01L21316

CPC分类号： H01L21/31691 ,  C23C16/409 ,  H01L28/55

摘要： A method of forming a (Ba, Sr) TiO3 high dielectric constant thin film with sufficient coverage is provided. A Ba material, an Sr material and a Ti material including bis (t-butoxy) bis (dipivaloylmethanate) titanium are dissolved in an organic solvent to obtain a solution material. The solution material is vaporized, so that material gas is obtained. A (Ba, Sr) TiO3 thin film is formed on a substrate by CVD reaction using the material gas.

摘要翻译： 提供了形成具有足够覆盖面的（Ba，Sr）TiO 3高介电常数薄膜的方法。 将Ba材料，Sr材料和包含双（叔丁氧基）双（二戊酰甲烷甲酸酯）钛的Ti材料溶解在有机溶剂中以获得溶液材料。 使溶液气化，得到原料气体。 通过使用原料气体的CVD反应在基板上形成（Ba，Sr）TiO 3薄膜。

公开(公告)号：US06187622B1

公开(公告)日：2001-02-13

申请号：US09003515

申请日：1998-01-06

申请人： Takeharu Kuroiwa ,  Tsuyoshi Horikawa ,  Noboru Mikami ,  Tetsuro Makita

发明人： Takeharu Kuroiwa ,  Tsuyoshi Horikawa ,  Noboru Mikami ,  Tetsuro Makita

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L27/10852 ,  H01L28/60

摘要： A semiconductor memory device achieves a high capacitance value even when the elements are made extremely small as the degree of integration is increased. A method of producing such a semiconductor memory maintains a high capacitance value while achieving increased integration. A semiconductor memory device includes adjacent capacitor lower electrodes which are separated by a width of 0.2 &mgr;m while the ratio of the capacitor lower electrode height to the separation width is 1, the capacitor upper electrode covers the capacitor insulation film, and steps generated in the separated portion of the capacitor lower electrodes are filled by the upper electrode material. A method of manufacturing produces a semiconductor memory device wherein the capacitor upper electrode is formed in plasma which includes etchable gas by chemical or physical action.

摘要翻译： 即使当元件的集成度增加时，半导体存储器件也实现了高的电容值。 制造这种半导体存储器的方法保持高的电容值，同时实现增加的集成。 半导体存储器件包括相邻的电容器下电极，其间隔0.2μm的宽度，而电容器下电极高度与分离宽度的比率为1，电容器上电极覆盖电容器绝缘膜，并且分离的步骤 电容器下电极的一部分由上电极材料填充。 一种制造方法产生半导体存储器件，其中电容器上电极通过化学或物理作用形成包括可蚀刻气体的等离子体。

公开(公告)号：US06179920B2

公开(公告)日：2001-01-30

申请号：US09150212

申请日：1998-09-09

申请人： Masayoshi Tarutani ,  Tsuyoshi Horikawa ,  Takaaki Kawahara ,  Mikio Yamamuka

发明人： Masayoshi Tarutani ,  Tsuyoshi Horikawa ,  Takaaki Kawahara ,  Mikio Yamamuka

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/409 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45512 ,  C23C16/45561

摘要： A CVD apparatus for forming a thin film having a high dielectric constant, which is improved to suppress source precipitation and residue generation and to achieve stable formation of a BST thin film, is provided. The apparatus includes a reaction chamber, a source gas supply tube, and a reactive gas supply tube. A jet element for jetting out the gas along the inner walls of the reaction chamber is provided to at least one of the source gas supply tube and the reactive gas supply tube.

摘要翻译： 提供了一种用于形成具有高介电常数的薄膜的CVD装置，其被改进以抑制源沉淀和残留物产生并且实现BST薄膜的稳定形成。 该装置包括反应室，源气体供应管和反应气体供应管。 用于沿着反应室的内壁喷射气体的喷射元件设置在源气体供给管和反应气体供给管中的至少一个上。

公开(公告)号：US5231282A

公开(公告)日：1993-07-27

申请号：US822109

申请日：1992-01-17

申请人： Kazuro Nishi ,  Hajime Nakajima ,  Masaya Mizunuma ,  Tatsuo Masumi ,  Shigeyuki Kaho ,  Tsuyoshi Horikawa ,  Shin Tahata

发明人： Kazuro Nishi ,  Hajime Nakajima ,  Masaya Mizunuma ,  Tatsuo Masumi ,  Shigeyuki Kaho ,  Tsuyoshi Horikawa ,  Shin Tahata

IPC分类号： G02F1/135 ,  G09G3/02 ,  H04N5/74

CPC分类号： G02F1/135 ,  G02F1/1354 ,  G09G3/02 ,  H04N5/7441 ,  G09G2310/061 ,  G09G2360/141 ,  G09G3/36

摘要： A liquid crystal light valve has a photoconductive layer between a pair of electrodes, and a liquid crystal layer. The resistivity of the photoconductive layer at the portion which is irradiated with light is reduced by partial light irradiation. By applying a voltage between the electrodes in this state, the voltage is applied to the liquid crystal layer in the portion which is irradiated with light and the crystalline structure at this portion is changed, thereby enabling image data writing. The photoconductive layer is a laminate of an amorphous Si film and an inorganic insulating film disposed on the electrode side, which structure suppresses the carrier injection from the electrode to the amorphous Si film. The polarity of a voltage for writing image data into the liquid crystal light valve is inverted for every horizontal scanning operation. That is, writing of black portions on a white background and writing of white portions on a black background are alternately executed. It is therefore possible to write data on one line and erase the data on the next line by a voltage of one polarity. By periodically setting a period in which no voltage is applied during writing, writing error caused by stored charges is prevented.

摘要翻译： 液晶光阀在一对电极和液晶层之间具有光电导层。 通过部分光照射，光照射部分的光电导层的电阻率降低。 通过在这种状态下在电极之间施加电压，将电压施加到被照射的部分中的液晶层，并且该部分的晶体结构发生变化，从而使图像数据写入。 光电导层是设置在电极侧的非晶Si膜和无机绝缘膜的层叠体，该结构抑制从电极向非晶Si膜的载流子注入。 对于每次水平扫描操作，将图像数据写入液晶光阀的电压的极性反转。 也就是说，交替地执行在白色背景上写入黑色部分并在黑色背景上写入白色部分。 因此，可以在一行上写入数据，并通过一个极性的电压擦除下一行的数据。 通过周期性地设定在写入期间不施加电压的周期，防止由存储的电荷引起的写入错误。