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    GROOVED INSULATOR TO REDUCE LEAKAGE CURRENT
    22.
    发明申请
    GROOVED INSULATOR TO REDUCE LEAKAGE CURRENT 有权
    绝缘绝缘子减少泄漏电流

    公开(公告)号：US20160042920A1

    公开(公告)日：2016-02-11

    申请号：US14454493

    申请日：2014-08-07

    Applicant: Applied Materials, Inc.

    Inventor： TAE CHO ,  Sang Won Kang ,  Dongqing Yang ,  Raymond W. Lu ,  Peter Hillman ,  Nicholas Celeste ,  Tien Fak Tan ,  Soonam Park ,  Dmitry Lubomirsky

    IPC: H01J37/32 ,  H01J9/24

    CPC classification number: H01J37/3255 ,  H01J37/32082

    Abstract: A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.

    Abstract translation: 等离子体源包括具有各自表面的第一电极和第二电极，以及在电极之间并与电极接触的绝缘体。 电极表面和绝缘体表面基本上限定等离子体腔。 绝缘体表面限定一个或多个凹槽，其构造成防止在绝缘体表面上以连续形式沉积材料。 产生等离子体的方法包括将一种或多种气体引入到由第一电极，与第一电极接触的绝缘体的表面和面对第一电极的第二电极限定的等离子体腔中。 绝缘体表面限定一个或多个凹槽，其中绝缘体表面的部分不暴露于空腔的中心区域。 该方法还包括在第一和第二电极之间提供RF能量以在空腔内产生等离子体。

    DRY-ETCH FOR SELECTIVE OXIDATION REMOVAL
    23.
    发明申请
    DRY-ETCH FOR SELECTIVE OXIDATION REMOVAL 有权
    干燥剂用于选择性氧化去除

    公开(公告)号：US20140199850A1

    公开(公告)日：2014-07-17

    申请号：US13839948

    申请日：2013-03-15

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Sang Hyuk Kim ,  Dongqing Yang ,  Young S. Lee ,  Weon Young Jung ,  Sang-jin Kim ,  Ching-Mei Hsu ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/311

    CPC classification number: H01L21/3065 ,  C23C16/0245 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

    Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.

    Abstract translation: 描述了相对于钨，氧化硅，氮化硅和/或氮化钛选择性地蚀刻氧化钨的方法。 这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钨反应。 等离子体流出物与暴露的表面反应并选择性地去除氧化钨，同时非常缓慢地除去其它暴露的材料。 在一些实施方案中，氧化钨选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。

    OXIDE QUALITY DIFFERENTIATION
    24.
    发明申请
    OXIDE QUALITY DIFFERENTIATION 有权

    公开(公告)号：US20250125154A1

    公开(公告)日：2025-04-17

    申请号：US18485998

    申请日：2023-10-12

    Applicant: Applied Materials, Inc.

    Inventor： Lala Zhu ,  Yimin Huang ,  Shi Che ,  Yi Jin ,  Dongqing Yang ,  Lakmal C. Kalutarage ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/311 ,  H01L21/02

    Abstract: Exemplary methods and systems of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. Methods may include forming a low quality oxide within one or more of the recesses, where the low quality oxide and a silicon-containing material each contain an exposed surface. Methods include contacting the low quality oxide and the high quality semiconductor material with a passivating agent selective to a surface defect of the low quality oxide. Methods include contacting the substrate with an etching agent and/or a cleaning agent, where the contacting with the cleaning agent removes the high quality semiconductor material at an equal or faster rate than the low quality oxide.

    MICROWAVE HIGH-DENSITY PLASMA FOR SELECTIVE ETCH
    25.
    发明申请
    MICROWAVE HIGH-DENSITY PLASMA FOR SELECTIVE ETCH 有权

    公开(公告)号：US20250118536A1

    公开(公告)日：2025-04-10

    申请号：US18484379

    申请日：2023-10-10

    Applicant: Applied Materials, Inc.

    Inventor： Yi-Hsuan Hsiao ,  Dongqing Yang ,  Kelvin Chan ,  Philip A. Kraus ,  Thai Cheng Chua ,  Ping-Hwa Hsieh ,  Nitin K. Ingle

    IPC: H01J37/32 ,  H01L21/311

    Abstract: Semiconductor processing systems and methods for increased etch selectivity and rate are provided. Methods include etching a target material of a semiconductor substrate by flowing one or more plasma precursors through a microwave applicator into a remote plasma region of a semiconductor processing chamber. Generating a remote plasma within the remote plasma region at a microwave frequency, where the generated remote plasma comprises a density of greater than 1×1010 per cm3, an ion energy of less than or about 50 eV, or a combination thereof. Flowing the plasma effluents into a processing region of the semiconductor processing chamber. The microwave applicator includes a resonator body and a plate, where the resonator body is formed from or coated with a first dielectric material and the plate is formed from or coated with a second dielectric material.

    Semiconductor processing chamber for multiple precursor flow
    27.
    发明授权
    Semiconductor processing chamber for multiple precursor flow 有权

    公开(公告)号：US11276559B2

    公开(公告)日：2022-03-15

    申请号：US15597973

    申请日：2017-05-17

    Applicant: Applied Materials, Inc.

    Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

    IPC: H01J37/32

    Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

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