公开(公告)号：US10113236B2

公开(公告)日：2018-10-30

申请号：US14577828

申请日：2014-12-19

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Shankar Venkataraman ,  Jay D. Pinson, II ,  Jang-Gyoo Yang ,  Nitin Krishnarao Ingle ,  Qiwei Liang

IPC: C23C16/56 ,  C23C16/46 ,  C23C16/455 ,  H01L21/677 ,  H01L21/02 ,  C23C16/44 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

公开(公告)号：US20170226637A1

公开(公告)日：2017-08-10

申请号：US15581324

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien N. Chuc ,  Ellie Yieh

IPC: C23C16/455 ,  C23C16/40 ,  H01J37/32 ,  C23C16/52 ,  H01L21/02 ,  H01L21/762 ,  C23C16/505 ,  C23C16/458

CPC classification number: C23C16/45502 ,  C23C16/401 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32752 ,  H01J2237/2001 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76224

Abstract: A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

公开(公告)号：US20160111256A1

公开(公告)日：2016-04-21

申请号：US14516998

申请日：2014-10-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Michael W. Stowell ,  Qiwei Liang

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32119 ,  H01J37/32192 ,  H01J37/32238

Abstract: A gas distribution plate for a plasma reactor has a dielectric front plate and a dielectric back plate bonded together, with gas injection orifices extending through the front plate and gas supply channels in the surface of front plate facing the back plate. The back plate is joined to a heat reflective plate, or the back plate itself is formed of a heat reflective material, such as Beryllium Oxide.

Abstract translation: 用于等离子体反应器的气体分配板具有接合在一起的电介质前板和电介质背板，气体注入孔延伸穿过前板，前板的表面中的气体供给通道面向背板。 背板连接到热反射板，或者背板本身由诸如铍氧化物的热反射材料形成。

公开(公告)号：US20150368801A1

公开(公告)日：2015-12-24

申请号：US14657405

申请日：2015-03-13

Applicant: Applied Materials, Inc.

Inventor： Jun XUE ,  Ludovic Godet ,  Qiwei Liang

IPC: C23C16/50 ,  C23C16/458 ,  C23C14/48 ,  H01J37/32

CPC classification number: C23C16/045 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32633

Abstract: Plasma process chambers employing distribution grids having focusing surfaces thereon enabling angled fluxes to reach a substrate, and associated methods are disclosed. A distribution grid is disposed in a chamber between the plasma and a substrate. The distribution grid includes a first surface facing the substrate and a focusing surface facing the plasma. A passageway extends through the distribution grid, and is sized with a width to prevent the plasma sheath from entering therein. By positioning the focusing surface at an angle other than parallel to the substrate, an ion flux from the plasma may be accelerated across the plasma sheath and particles of the flux pass through the passageway to be incident upon the substrate. In this manner, the angled ion flux may perform thin film deposition and etch processes on sidewalls of features extending orthogonally from or into the substrate, as well as angled implant and surface modification.

Abstract translation: 等离子体处理室采用其上具有聚焦表面的分配网格，其上形成有角度的焊剂以到达衬底，以及相关方法。 配电网布置在等离子体和基板之间的室中。 配电网包括面向衬底的第一表面和面向等离子体的聚焦表面。 通道延伸穿过配电网，并且具有宽度的尺寸以防止等离子体护套进入其中。 通过将聚焦表面定位在与衬底不同的角度处，来自等离子体的离子通量可以跨越等离子体鞘加速，并且助焊剂的颗粒通过通道入射到衬底上。 以这种方式，成角度的离子通量可以在从基底垂直延伸的特征的侧壁上进行薄膜沉积和蚀刻处理，以及成角度的植入物和表面改性。

公开(公告)号：US20150348757A1

公开(公告)日：2015-12-03

申请号：US14293114

申请日：2014-06-02

Applicant: Applied Materials, Inc.

Inventor： Michael W. Stowell ,  Qiwei Liang

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32229 ,  H01J37/32238 ,  H01J37/32449 ,  H01J37/32522

Abstract: A plasma reactor has a microwave source including a microwave window with a channel extending through the window and a coolant source for flowing a coolant through the channel. The coolant is a liquid that does not absorb microwave power.

Abstract translation: 等离子体反应器具有微波源，其包括具有延伸穿过窗口的通道的微波窗口和用于使冷却剂流过通道的冷却剂源。 冷却液是不吸收微波功率的液体。

公开(公告)号：US20130153148A1

公开(公告)日：2013-06-20

申请号：US13773067

申请日：2013-02-21

Applicant: Applied Materials, Inc.

Inventor： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

IPC: H05H1/24

CPC classification number: H05H1/24 ,  C23C16/45565 ,  C23C16/45585 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01L21/02274

Abstract: Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

Abstract translation: 描述了具有位于处理室内的电容耦合等离子体（CCP）单元的衬底处理系统。 CCP单元可以包括形成在第一电极和第二电极之间的等离子体激发区域。 第一电极可以包括允许第一气体进入等离子体激发区域的第一多个开口，并且第二电极可以包括允许活化气体离开等离子体激发区域的第二多个开口。 该系统还可以包括用于将第一气体供应到CCP单元的第一电极的气体入口和可操作以支撑衬底的基座。 基座位于气体反应区域的下方，活性气体从CCP单元行进。

公开(公告)号：US20250054739A1

公开(公告)日：2025-02-13

申请号：US18929023

申请日：2024-10-28

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Keith Tatseun Wong ,  Antony K. Jan

IPC: H01J37/32 ,  C23C16/04 ,  H01L21/027 ,  H01L21/32

Abstract: A method includes flowing an evaporated low vapor pressure organic molecule (OM) into a processing chamber including a substrate. The method further includes depositing, in the processing chamber, the low vapor pressure OM onto at least a portion of the substrate at a first temperature and a first pressure to form a self-assembled monolayer (SAM) on at least the portion of the substrate. The method further includes annealing, in the processing chamber, the SAM on at least the portion of the substrate at a second temperature and a second pressure. The second pressure is greater than the first pressure and the second temperature is greater than the first temperature.

公开(公告)号：US11749555B2

公开(公告)日：2023-09-05

申请号：US16706115

申请日：2019-12-06

Applicant: Applied Materials, Inc.

Inventor： Sultan Malik ,  Srinivas D. Nemani ,  Qiwei Liang ,  Adib M. Khan

IPC: H01L21/687 ,  H01L21/673

CPC classification number: H01L21/68742 ,  H01L21/67376 ,  H01L21/67393

Abstract: Embodiments of the disclosure relate to an apparatus and method for processing semiconductor substrates. In one embodiment, a processing system is disclosed. The processing system includes an outer chamber that surrounds an inner chamber. The inner chamber includes a substrate support upon which a substrate is positioned during processing. The inner chamber is configured to have an internal volume that, when isolated from an internal volume of the outer chamber, is changeable such that the pressure within the internal volume of the inner chamber may be varied.

公开(公告)号：US11361978B2

公开(公告)日：2022-06-14

申请号：US16926422

申请日：2020-07-10

Applicant: Applied Materials, Inc.

Inventor： Adib M. Khan ,  Qiwei Liang ,  Sultan Malik ,  Srinivas D. Nemani

IPC: H01L21/447 ,  C23C16/452 ,  H01L21/67

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.

公开(公告)号：USD941787S1

公开(公告)日：2022-01-25

申请号：US29726488

申请日：2020-03-03

Applicant: Applied Materials, Inc.

Designer： Sultan Malik ,  Srinivas D. Nemani ,  Adib M. Khan ,  Qiwei Liang