公开(公告)号：US09449794B2

公开(公告)日：2016-09-20

申请号：US14270578

申请日：2014-05-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Jason A. Kenney ,  Shahid Rauf ,  Kenneth S. Collins ,  Yang Yang ,  Steven Lane ,  Yogananda Sarode Vishwanath

IPC: H01J7/24 ,  H01J37/32 ,  C23C16/455 ,  C23C16/509 ,  H05H1/46

CPC classification number: H01J37/3211 ,  C23C16/45563 ,  C23C16/509 ,  H01J37/32174 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma reactor has an overhead multiple coil antennas including a parallel spiral coil antenna and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract translation: 等离子体反应器具有架空多重线圈天线，包括平行的螺旋线圈天线以及围绕对称和径向射频馈送的对称和径向射频馈送以及圆柱形RF屏蔽。 径向RF馈送对称地馈送到等离子体源。

公开(公告)号：US20160217981A1

公开(公告)日：2016-07-28

申请号：US15068811

申请日：2016-03-14

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Srinivas Nemani ,  Bradley Howard ,  Yogananda Sarode Vishwanath

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32495 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32568 ,  H01J37/32807 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069

Abstract: An exemplary semiconductor processing system may include a remote plasma source coupled with a processing chamber having a top plate. An inlet assembly may be used to couple the remote plasma source with the top plate and may include a mounting assembly, which in embodiments may include at least two components. The inlet assembly may further include a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with an injection port.

公开(公告)号：US09287095B2

公开(公告)日：2016-03-15

申请号：US14108692

申请日：2013-12-17

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Srinivas Nemani ,  Bradley Howard ,  Yogananda Sarode Vishwanath

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01J37/32495 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32568 ,  H01J37/32807 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069

Abstract: An exemplary semiconductor processing system may include a remote plasma source coupled with a processing chamber having a top plate. An inlet assembly may be used to couple the remote plasma source with the top plate and may include a mounting assembly, which in embodiments may include at least two components. The inlet assembly may further include a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with an injection port.

Abstract translation: 示例性半导体处理系统可以包括与具有顶板的处理室耦合的远程等离子体源。 入口组件可以用于将远程等离子体源与顶板耦合，并且可以包括安装组件，其在实施例中可以包括至少两个组件。 入口组件还可以包括限定与注射口流体连接的多个分配通道的前体分布组件。

公开(公告)号：US20240420984A1

公开(公告)日：2024-12-19

申请号：US18210328

申请日：2023-06-15

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Yogananda Sarode Vishwanath ,  Tom K. Cho ,  Jennifer Y. Sun ,  Xue Yang Chang

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/673

Abstract: An electrostatic chuck (ESC) including a ceramic body having a first surface with two or more regions defined on the first surface arranged concentrically with respect to each other on the first surface. Each region includes a retaining ring arranged on the first surface and defining an outer edge of the region, and structures arranged on the first surface and within the region configured to support a surface of a substrate when the substrate is retained by the electrostatic chuck. The ESC includes gas conduits configured to introduce a gas into the two or more regions through the ceramic body and to the first surface, and embedded electrodes within the ceramic body and arranged with respect to the first surface and configured to generate a retaining force on the surface of the substrate.

公开(公告)号：US12094752B2

公开(公告)日：2024-09-17

申请号：US17843652

申请日：2022-06-17

Applicant: Applied Materials, Inc.

Inventor： Michael R. Rice ,  Yogananda Sarode Vishwanath ,  Sunil Srinivasan ,  Rajinder Dhindsa ,  Steven E. Babayan ,  Olivier Luere ,  Denis M. Koosau ,  Imad Yousif

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/68735 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32715 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/6831 ,  H01L21/68742 ,  H01J2237/334

Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a process kit for processing a substrate is provided. The process kit has a support ring comprising an upper surface having an inner edge disposed at a first height and an outward edge disposed at a second height less than the first height, the inner edge having a greater thickness than the outward edge. An edge ring is disposed on the support ring, an inner surface of the edge ring interfaced with the inner edge of the support ring. A cover ring is disposed outward of the edge ring, the edge ring independently moveable relative to the support ring and the cover ring. Push pins are disposed inward of the cover ring, the push pins operable to elevate the edge ring while constraining radial movement of the support ring.

公开(公告)号：US11569114B2

公开(公告)日：2023-01-31

申请号：US17174591

申请日：2021-02-12

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode Vishwanath ,  Steven E. Babayan ,  Andreas Schmid ,  Stephen Donald Prouty ,  Andrew Antoine Noujaim

IPC: B29C65/00 ,  H01L21/683 ,  H05K7/20 ,  B29C65/56 ,  B29C65/02 ,  B29C65/48

Abstract: Embodiments described herein relate to a substrate support assembly. The substrate support assembly includes an ESC base assembly having a base channel disposed therein, a facility plate, the facility plate coupled to the ESC base assembly with a vacuum region therebetween, and a seal assembly. The seal assembly includes an upper flange coupled to the base channel of the ESC base assembly, the upper flange disposed in the facility plate, a lower flange coupled to the upper flange, the lower flange disposed in the facility plate, a gasket disposed between the upper flange and the lower flange, and an insulator tube coupled to the lower flange. A passage is connected to the base channel, the passage is defined by connected openings of the upper flange, the gasket, the lower flange, the insulator tube, and the base assembly.

公开(公告)号：US11201037B2

公开(公告)日：2021-12-14

申请号：US16131893

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode Vishwanath

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/687 ,  H01L21/683

Abstract: Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. A lower surface of the second ring component contains an upper alignment coupling and an upper surface of the adjustable tuning ring contains a lower alignment coupling. The lower alignment coupling of the adjustable tuning ring is configured to mate with the upper alignment coupling of the second ring component to form an interface. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring. The actuating mechanism is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component is varied.

公开(公告)号：US11075105B2

公开(公告)日：2021-07-27

申请号：US16103531

申请日：2018-08-14

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode Vishwanath ,  Steven E. Babayan ,  Stephen Prouty ,  Andreas Schmid

IPC: H01L21/687 ,  C23C16/458 ,  H01J37/32 ,  H01L21/677 ,  H01L21/683

Abstract: Aspects of the present disclosure generally relate to apparatuses and methods for edge ring replacement in processing chambers. In one aspect, a carrier for supporting an edge ring is disclosed. In other aspects, robot blades for supporting a carrier are disclosed. In another aspect, a support structure for supporting a carrier in a degassing chamber is disclosed. In another aspect, a method of transferring an edge ring on a carrier is disclosed.

公开(公告)号：US20210048108A1

公开(公告)日：2021-02-18

申请号：US16542798

申请日：2019-08-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Yogananda Sarode Vishwanath ,  Xue Chang ,  Anilkumar Rayaroth ,  Chetan Naik ,  Balachandra Jatak Narayan

IPC: F16K1/42

Abstract: Embodiments of symmetric flow valves for use in a substrate processing chamber are provided herein. In some embodiments, a symmetric flow valve includes a valve body having sidewalls, a bottom plate, and a top plate that together define an interior volume, wherein the top plate includes one or more axisymmetrically disposed openings; a poppet disposed in the interior volume, wherein the poppet includes a central opening and a plurality of portions configured to selectively seal the one or more axisymmetrically disposed openings of the top plate when the symmetric flow valve is in a closed position; and a first actuator coupled to the poppet to position the poppet within the interior volume in at least an open position, where the poppet is spaced apart from the top plate to allow flow through the one or more axisymmetrically disposed openings of the top plate, and the closed position.

公开(公告)号：US10790123B2

公开(公告)日：2020-09-29

申请号：US16131909

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode Vishwanath

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/683 ,  H01L21/3065

Abstract: Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, a sliding ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. The sliding ring is positioned beneath the edge ring. The adjustable tuning ring is positioned beneath the sliding ring. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring and configured to actuate the adjustable tuning ring such that the gap between the first and second ring components is varied. In one or more examples, the sliding ring includes a matrix and a coating, the matrix contains an electrically conductive material and the coating contains an electrically insulting material.