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    Silicon selective removal
    22.
    发明授权
    Silicon selective removal 有权

    公开(公告)号：US09881805B2

    公开(公告)日：2018-01-30

    申请号：US15056756

    申请日：2016-02-29

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Zihui Li ,  Ching-Mei Hsu ,  Hanshen Zhang ,  Jingchun Zhang

    IPC: H01L21/3065 ,  H01J37/32

    CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32954 ,  H01J2237/334

    Abstract: A method of etching exposed silicon on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a hydrogen-containing precursor. The combination react with the patterned heterogeneous structures to remove an exposed silicon portion faster than a second exposed portion. The silicon selectivity results from the presence of an ion suppressor positioned between the remote plasma and the substrate processing region. The methods may be used to selectively remove silicon faster than silicon oxide, silicon nitride and a variety of metal-containing materials. The methods may be used to remove small etch amounts in a controlled manner and may result in an extremely smooth silicon surface.

    SILICON SELECTIVE REMOVAL
    26.
    发明申请
    SILICON SELECTIVE REMOVAL 有权
    硅选择性拆除

    公开(公告)号：US20160260616A1

    公开(公告)日：2016-09-08

    申请号：US15056756

    申请日：2016-02-29

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Zihui Li ,  Ching-Mei Hsu ,  Hanshen Zhang ,  Jingchun Zhang

    IPC: H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32954 ,  H01J2237/334

    Abstract: A method of etching exposed silicon on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a hydrogen-containing precursor. The combination react with the patterned heterogeneous structures to remove an exposed silicon portion faster than a second exposed portion. The silicon selectivity results from the presence of an ion suppressor positioned between the remote plasma and the substrate processing region. The methods may be used to selectively remove silicon faster than silicon oxide, silicon nitride and a variety of metal-containing materials. The methods may be used to remove small etch amounts in a controlled manner and may result in an extremely smooth silicon surface.

    Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括使用在远程等离子体中形成的等离子体流出物的气相蚀刻。 远程等离子体激发含氟前体。 远程等离子体内的等离子体流出物流入衬底处理区域，其中等离子体流出物与含氢前体结合。 该组合与图案化的异质结构反应以比第二暴露部分更快地除去暴露的硅部分。 硅选择性是由位于远程等离子体和基板处理区域之间的离子抑制器的存在引起的。 这些方法可用于比硅氧化物，氮化硅和各种含金属的材料选择性地去除硅。 这些方法可以用于以受控的方式去除小的蚀刻量，并且可能导致非常光滑的硅表面。

    SELECTIVE ETCH OF SILICON NITRIDE
    27.
    发明申请
    SELECTIVE ETCH OF SILICON NITRIDE 审中-公开
    硅酸盐的选择性蚀刻

    公开(公告)号：US20150079797A1

    公开(公告)日：2015-03-19

    申请号：US14479671

    申请日：2014-09-08

    Applicant: Applied Materials, Inc.

    Inventor： Zhijun Chen ,  Zihui Li ,  Anchuan Wang ,  Nitin K. Ingle ,  Shankar Venkataraman

    IPC: H01L21/02 ,  H01L21/3065

    CPC classification number: H01L21/02205 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116

    Abstract: A method of etching silicon nitride on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a nitrogen-and-oxygen-containing precursor. Plasma effluents from two remote plasmas are flowed into a substrate processing region where the plasma effluents react with the silicon nitride. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon nitride while very slowly removing silicon, such as polysilicon. The silicon nitride selectivity results partly from the introduction of fluorine-containing precursor and nitrogen-and-oxygen-containing precursor using distinct (but possibly overlapping) plasma pathways which may be in series or in parallel.

    Abstract translation: 描述了在图案化的异质结构上蚀刻氮化硅的方法，并且包括由含氟前体和含氮和氧的前体形成的远程等离子体蚀刻。 来自两个远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化硅反应。 等离子体流出物与图案化的异质结构反应以选择性地去除氮化硅，同时非常缓慢地除去硅，例如多晶硅。 氮化硅选择性部分取决于使用可能是串联或并联的不同（但可能重叠的）等离子体途径引入含氟前体和含氮和氧的前体。

    SELECTIVE ETCHING BETWEEN SILICON-AND-GERMANIUM-CONTAINING MATERIALS WITH VARYING GERMANIUM CONCENTRATIONS
    28.
    发明申请
    SELECTIVE ETCHING BETWEEN SILICON-AND-GERMANIUM-CONTAINING MATERIALS WITH VARYING GERMANIUM CONCENTRATIONS 有权

    公开(公告)号：US20250029841A1

    公开(公告)日：2025-01-23

    申请号：US18223156

    申请日：2023-07-18

    Applicant: Applied Materials, Inc.

    Inventor： Jiayin Huang ,  Zihui Li ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/3065 ,  H01L21/02

    Abstract: Exemplary semiconductor processing methods may include providing a pre-treatment precursor to a processing region of a semiconductor processing chamber. A first layer of silicon-and-germanium-containing material and a second layer of silicon-and-germanium-containing material may be disposed on a substrate housed within the processing region. A native oxide may be present on the first layer and the second layer. The methods may include contacting the substrate with the pre-treatment precursor to remove the native oxide. The methods may include providing an oxygen-containing precursor to the processing region. The methods may include contacting the substrate with the oxygen-containing precursor to oxidize at least a portion of the second layer. The methods may include providing an etchant precursor to the processing region. The methods may include contacting the substrate with the etchant precursor to selectively etch the first layer of silicon-and-germanium-containing material.

    PROCESSING METHODS TO IMPROVE ETCHED SILICON-AND-GERMANIUM-CONTAINING MATERIAL SURFACE ROUGHNESS
    29.
    发明公开
    PROCESSING METHODS TO IMPROVE ETCHED SILICON-AND-GERMANIUM-CONTAINING MATERIAL SURFACE ROUGHNESS 审中-公开

    公开(公告)号：US20240290623A1

    公开(公告)日：2024-08-29

    申请号：US18115269

    申请日：2023-02-28

    Applicant: Applied Materials, Inc.

    Inventor： Bin Yao ,  Zihui Li ,  Jiayin Huang ,  Anchuan Wang ,  Chia-Ling Kao ,  Nitin K. Ingle

    IPC: H01L21/3065 ,  H01J37/32

    CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32816 ,  H01J2237/182 ,  H01J2237/334

    Abstract: Exemplary semiconductor processing methods may include providing a pre-treatment precursor to a processing a remote plasma system of a semiconductor processing chamber. The methods may include generating plasma effluents of the pre-treatment precursor in the remote plasma system. The methods may include flowing plasma effluents of the pre-treatment precursor to a processing region of the semiconductor processing chamber. A substrate including alternating layers of material may be disposed within the processing region. The alternating layers of material may include a silicon-and-germanium-containing material. The methods may include contacting the substrate with the plasma effluents of the pre-treatment precursor. The methods may include etching the silicon-and-germanium-containing material. The methods may include providing a post-treatment precursor to the processing region. The methods may include contacting the substrate with the post-treatment precursor. The methods may include removing the portion of the silicon-and-germanium-containing material.

    Methods for anisotropic control of selective silicon removal
    30.
    发明授权
    Methods for anisotropic control of selective silicon removal 有权

    公开(公告)号：US10170336B1

    公开(公告)日：2019-01-01

    申请号：US15669326

    申请日：2017-08-04

    Applicant: Applied Materials, Inc.

    Inventor： Zihui Li ,  Chia-Ling Kao ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/302 ,  H01L21/3213 ,  H01L21/3065 ,  H01L29/66 ,  H01L21/02 ,  H01L21/67 ,  H01L29/40 ,  H01L21/311

    Abstract: Embodiments of the present technology may include a method of etching. The method may include flowing a gas through a plasma to form plasma effluents. The method may also include reacting plasma effluents with a first layer defining a first feature. The first feature may include a first sidewall, a second sidewall, and a bottom. The first sidewall, the second sidewall, and the bottom may include the first layer. The first layer may be characterized by a first thickness on the sidewall. The method may further include forming a second layer from the reaction of the plasma effluents with the first layer. The first layer may be replaced by the second layer. The second layer may be characterized by a second thickness. The second thickness may be greater than or equal to the first thickness. The method may also include removing the second layer to expose a third layer.

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