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公开(公告)号：US08957430B2
公开(公告)日：2015-02-17
申请号：US13369996
申请日：2012-02-09
申请人： Matthew Donofrio
发明人： Matthew Donofrio
IPC分类号： H01L29/18 , H01L25/075 , H01L33/54 , H01L33/20 , H01L33/50
CPC分类号： H01L25/0753 , H01L33/20 , H01L33/505 , H01L33/54 , H01L2224/48091 , H01L2924/10155 , H01L2924/00014
摘要： A light emitting device is fabricated by providing a mounting substrate and an array of light emitting diode dies adjacent the mounting substrate to define gaps. A gel that is diluted in a solvent is applied on the substrate and on the array of light emitting dies. At least some of the solvent is evaporated so that the gel remains in the gaps, but does not completely cover the light emitting diode dies. For example, the gel substantially recedes from the substrate beyond the array of light emitting diode dies and also substantially recedes from an outer face of the light emitting diode dies. Related light emitting device structures are also described.
摘要翻译： 通过提供安装基板和与安装基板相邻的发光二极管管芯阵列来限定间隙来制造发光器件。 将在溶剂中稀释的凝胶施加在基板上和发光管芯阵列上。 蒸发至少一些溶剂，使得凝胶留在间隙中，但不完全覆盖发光二极管管芯。 例如，凝胶基本上从衬底超过发光二极管管芯的阵列后退，并且基本上从发光二极管管芯的外表面后退。 还描述了相关的发光器件结构。
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22.发明授权Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts 有权碳化硅功率器件包括P型外延层和直接欧姆接触公开(公告)号：US08866150B2
公开(公告)日：2014-10-21
申请号：US11756020
申请日：2007-05-31
IPC分类号： H01L29/15 , H01L23/482 , H01L29/739 , H01L29/66 , H01L29/10 , H01L21/04 , H01L21/268
CPC分类号： H01L29/66068 , H01L21/0475 , H01L21/0485 , H01L21/268 , H01L23/4827 , H01L29/1095 , H01L29/7395 , H01L2224/04026 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/10271 , H01L2924/10272 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/00
摘要： A silicon carbide power device is fabricated by forming a p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate, and forming a silicon carbide power device structure on the p-type silicon carbide epitaxial layer. The n-type silicon carbide substrate is at least partially removed, so as to expose the p-type silicon carbide epitaxial layer. An ohmic contact is formed on at least some of the p-type silicon carbide epitaxial layer that is exposed. By at least partially removing the n-type silicon carbide substrate and forming an ohmic contact on the p-type silicon carbide epitaxial layer, the disadvantages of using a p-type substrate may be reduced or eliminated. Related structures are also described.
摘要翻译： 通过在n型碳化硅衬底上形成p型碳化硅外延层并在p型碳化硅外延层上形成碳化硅功率器件结构来制造碳化硅功率器件。 至少部分去除n型碳化硅衬底，以露出p型碳化硅外延层。 在露出的至少一些p型碳化硅外延层上形成欧姆接触。 通过至少部分去除n型碳化硅衬底并在p型碳化硅外延层上形成欧姆接触，可以减少或消除使用p型衬底的缺点。 还描述了相关结构。
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公开(公告)号：USD689830S1
公开(公告)日：2013-09-17
申请号：US29383908
申请日：2011-01-24
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公开(公告)号：US08525190B2
公开(公告)日：2013-09-03
申请号：US13160793
申请日：2011-06-15
CPC分类号： H01L33/54 , H01L25/0753 , H01L33/20 , H01L33/505 , H01L33/507 , H01L2224/14 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2924/0002 , H01L2924/10158 , H01L2924/00014 , H01L2924/00
摘要： Light emitting devices include a light emitting diode die on a mounting substrate and a conformal gel layer on the mounting substrate and/or on the light emitting diode die. The conformal gel layer may at least partially fill a gap between the light emitting diode die and the mounting substrate. A phosphor layer and/or a molded dome may be provided on the conformal gel layer. The conformal gel layer may be fabricated by spraying and/or dispensing the gel that is diluted in the solvent.
摘要翻译： 发光器件包括在安装衬底上的发光二极管管芯和安装衬底上和/或发光二极管管芯上的保形凝胶层。 保形凝胶层可以至少部分地填充发光二极管管芯和安装衬底之间的间隙。 可以在保形凝胶层上提供荧光体层和/或模制圆顶。 可以通过喷雾和/或分配在溶剂中稀释的凝胶来制造保形凝胶层。
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公开(公告)号：USD682225S1
公开(公告)日：2013-05-14
申请号：US29383910
申请日：2011-01-24
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公开(公告)号：USD675581S1
公开(公告)日：2013-02-05
申请号：US29396907
申请日：2011-07-08
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27.发明授权Nickel tin bonding system with barrier layer for semiconductor wafers and devices 有权具有用于半导体晶片和器件的阻挡层的镍锡键合系统公开(公告)号：US08247836B2
公开(公告)日：2012-08-21
申请号：US13035005
申请日：2011-02-25
CPC分类号： H01L33/0079 , H01L21/2007 , H01L23/4827 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05669 , H01L2224/29083 , H01L2224/29111 , H01L2224/29155 , H01L2224/32503 , H01L2224/83193 , H01L2224/83444 , H01L2224/8381 , H01L2224/83825 , H01L2924/12041 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
摘要翻译： 公开了一种发光二极管结构，其包括由外延层形成的发光有源部分和支撑有源部分的载体基板。 在镍和锡中占主导地位的结合金属体系将活性部分连接到载体基底上。 至少一个钛粘附层位于活性部分和载体基底之间，并且铂阻挡层位于镍 - 锡粘合体系和钛粘合层之间。 铂层具有足以基本上防止镍锡粘合体系中的锡迁移到钛粘合层中或通过钛粘附层的厚度。
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公开(公告)号：US20120193661A1
公开(公告)日：2012-08-02
申请号：US13112502
申请日：2011-05-20
IPC分类号： H01L33/58
CPC分类号： H01L33/52 , H01L25/0753 , H01L33/20 , H01L33/486 , H01L33/505 , H01L33/54 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A horizontal LED die is flip-chip mounted on a mounting substrate to define a gap that extends between the closely spaced apart anode and cathode contacts of the LED die, and between the closely spaced apart anode and cathode pads of the substrate. An encapsulant is provided on the light emitting diode die and the mounting substrate. The gap is configured to prevent sufficient encapsulant from entering the gap that would degrade operation of the LED.
摘要翻译： 水平LED管芯被倒装安装在安装基板上以限定在LED管芯的紧密间隔开的阳极和阴极接触件之间以及衬底的间隔开的阳极和阴极焊盘之间延伸的间隙。 密封剂设置在发光二极管管芯和安装基板上。 间隙被配置成防止足够的密封剂进入间隙，这将降低LED的操作。
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公开(公告)号：US20120193651A1
公开(公告)日：2012-08-02
申请号：US13224850
申请日：2011-09-02
CPC分类号： H01L25/0753 , H01L25/167 , H01L33/52 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014
摘要： Light emitting devices, systems, and methods are disclosed. In one embodiment a light emitting device can include an emission area having one or more light emitting diodes (LEDs) mounted over an irregularly shaped mounting area. The light emitting device can further include a retention material disposed about the emission area. The retention material can also be irregularly shaped, and can be dispensed. Light emitting device can include more than one emission area per device.
摘要翻译： 公开了发光器件，系统和方法。 在一个实施例中，发光器件可以包括具有安装在不规则形状的安装区域上的一个或多个发光二极管（LED）的发射区域。 发光装置还可以包括围绕发射区域设置的保持材料。 保持材料也可以是不规则形状，并且可以分配。 发光器件可以包括每个器件多于一个发射区域。
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公开(公告)号：US20110284875A1
公开(公告)日：2011-11-24
申请号：US13188361
申请日：2011-07-21
IPC分类号： H01L33/34
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region, and extending to said light emitting region.
摘要翻译： 公开了一种高效率III族氮化物发光二极管。 二极管包括选自由半导体材料和导电材料组成的组的衬底，在衬底上或衬底上的III族氮化物基发光区域，以及在发光区域上或上方含有碳化硅的透镜表面，并延伸到 所述发光区域。
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