公开(公告)号：US20090218591A1

公开(公告)日：2009-09-03

申请号：US11992992

申请日：2006-09-22

申请人： Vincent Grolier ,  Andreas Plössl ,  Marianne Renner

发明人： Vincent Grolier ,  Andreas Plössl ,  Marianne Renner

IPC分类号： H01L33/00 ,  B32B15/04 ,  B23K31/00 ,  B29C65/02

CPC分类号： H01L51/5253 ,  H01L51/5243 ,  Y10T156/10 ,  Y10T428/31678

摘要： A method for bonding several layers, which comprise at least one thermally bondable material, by means of a joint layer produced with the aid of thermocompression at least one of the layers comprising a semiconductor material, as well as to a correspondingly manufactured device. Also disclosed is a method for manufacturing an organic light-emitting diode and an organic light-emitting diode that is encapsulated between two cover layers with the aid of thermocompression.

摘要翻译： 一种通过借助于热压缩至少一个包含半导体材料的层以及相应制造的器件的接合层来粘结多层的方法，其包括至少一种可热粘合的材料。 还公开了一种用于制造有机发光二极管和有机发光二极管的方法，所述有机发光二极管和有机发光二极管借助于热压缩封装在两个覆盖层之间。

公开(公告)号：US09076897B2

公开(公告)日：2015-07-07

申请号：US14001310

申请日：2012-02-24

申请人： Helmut Fischer ,  Andreas Plössl

发明人： Helmut Fischer ,  Andreas Plössl

IPC分类号： H01L33/02 ,  H01L31/18 ,  H01L33/00 ,  H01L31/0687 ,  H01L31/02 ,  H01L33/64 ,  H01S5/02 ,  H01S5/024 ,  H01S5/022

CPC分类号： H01L33/02 ,  H01L31/02 ,  H01L31/06875 ,  H01L31/18 ,  H01L31/1892 ,  H01L31/1896 ,  H01L33/0079 ,  H01L33/641 ,  H01L2924/0002 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/02476 ,  Y02E10/544 ,  Y02P70/521 ,  H01L2924/00

摘要： An optoelectronic semiconductor device includes an optoelectronic semiconductor layer sequence on a metal carrier element, which includes as a first component silver and as a second component a material having a lower coefficient of thermal expansion than silver, wherein the first and second components are intermixed in the metal carrier element.

摘要翻译： 光电半导体器件包括在金属载体元件上的光电子半导体层序列，其包括作为第一组分银和作为第二组分的具有比银更低的热膨胀系数的材料，其中第一和第二组分混合在 金属载体元件。

公开(公告)号：US20130341655A1

公开(公告)日：2013-12-26

申请号：US13996492

申请日：2011-12-16

申请人： Andreas Plössl

发明人： Andreas Plössl

IPC分类号： H01L31/02 ,  H01L33/62

CPC分类号： H01L31/02002 ,  H01L23/147 ,  H01L23/49827 ,  H01L31/02005 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  Y10T29/49165 ,  H01L2924/00

摘要： The invention relates to a method for producing an electrical terminal support for an optoelectronic semiconductor body, comprising the following steps: providing a carrier assembly (1), which comprises a carrier body (11), an intermediate layer (12) arranged on an outer surface (111) of the carrier body (11), and a use layer (13) arranged on the intermediate layer (12); introducing at least two openings (4), which are mutually spaced in the lateral direction (L), in the use layer (13) via an outer surface (131) of the use layer (13), wherein the openings extend completely through the use layer (13) in the vertical direction (V); electrically insulating lateral surfaces (41) of the openings (4) and of the outer face (131) of the use layer (13); arranging electrically conductive material (6) at least in the openings (4), wherein after completion of the terminal carrier (100), the electrically conductive material (6) has an interruption (U) in the progression thereof along the outer surface (131) of the use layer (13) in the lateral direction (L) between adjoining openings (4).

摘要翻译： 本发明涉及一种用于制造光电子半导体主体的电端子支撑件的方法，包括以下步骤：提供载体组件（1），其包括载体主体（11），布置在外壳上的中间层（12） 载体（11）的表面（111）和布置在中间层（12）上的使用层（13）。 在所述使用层（13）中经由所述使用层（13）的外表面（131）引入在横向方向（L）上相互间隔开的至少两个开口（4），其中所述开口完全延伸穿过所述使用层 使用层（13）在垂直方向（V）上; 开口（4）和使用层（13）的外表面（131）的电绝缘侧表面（41）。 至少在开口（4）中布置导电材料（6），其中在端子载体（100）完成之后，导电材料（6）沿其外表面（131）的进行中断（U） ）在相邻的开口（4）之间的横向（L）上。

公开(公告)号：US08193070B2

公开(公告)日：2012-06-05

申请号：US11992992

申请日：2006-09-22

申请人： Vincent Grolier ,  Andreas Plössl ,  Marianne Renner

发明人： Vincent Grolier ,  Andreas Plössl ,  Marianne Renner

IPC分类号： H01L21/30 ,  H01L29/06

CPC分类号： H01L51/5253 ,  H01L51/5243 ,  Y10T156/10 ,  Y10T428/31678

摘要： A method for bonding several layers, which comprise at least one thermally bondable material, by means of a joint layer produced with the aid of thermocompression at least one of the layers comprising a semiconductor material, as well as to a correspondingly manufactured device. Also disclosed is a method for manufacturing an organic light-emitting diode and an organic light-emitting diode that is encapsulated between two cover layers with the aid of thermocompression.

摘要翻译： 一种通过借助于热压缩至少一个包含半导体材料的层以及相应制造的器件的接合层来粘结多层的方法，其包括至少一种可热粘合的材料。 还公开了一种用于制造有机发光二极管和有机发光二极管的方法，所述有机发光二极管和有机发光二极管借助于热压缩封装在两个覆盖层之间。

公开(公告)号：US20120040484A1

公开(公告)日：2012-02-16

申请号：US13281598

申请日：2011-10-26

申请人： Michael FEHRER ,  Berthold Hahn ,  Volker Härle ,  Stephan Kajser ,  Frank Otte ,  Andreas Plössl

发明人： Michael FEHRER ,  Berthold Hahn ,  Volker Härle ,  Stephan Kajser ,  Frank Otte ,  Andreas Plössl

IPC分类号： H01L33/32

CPC分类号： H01L21/76251 ,  B23K26/40 ,  B23K26/50 ,  B23K2103/172 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/2007 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29298 ,  H01L2224/83001 ,  H01L2224/8319 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/157 ,  H01L2924/15763 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.

摘要翻译： 提出了一种用于制造光电子部件的方法。 该方法包括通过用具有平台状空间光束轮廓的激光束照射从衬底分离基于III-V-化合物半导体材料的半导体层，其中半导体层的各个区域被连续照射。

公开(公告)号：US20050239270A1

公开(公告)日：2005-10-27

申请号：US10503042

申请日：2003-01-30

申请人： Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Stephan Kaiser ,  Frank Otte ,  Andreas Plössl

发明人： Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Stephan Kaiser ,  Frank Otte ,  Andreas Plössl

IPC分类号： B23K26/00 ,  B23K26/40 ,  B23K101/40 ,  C30B33/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/762 ,  H01L33/00 ,  H01S5/323 ,  H01L21/301

CPC分类号： H01L21/76251 ,  B23K26/40 ,  B23K26/50 ,  B23K2103/172 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/2007 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29298 ,  H01L2224/83001 ,  H01L2224/8319 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/157 ,  H01L2924/15763 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： A method for producing a semiconductor component, in particular a thin-film component, a semiconductor layer being separated from a substrate by irradiation with a laser beam having a plateaulike spatial beam profile. Furthermore, the semiconductor layer, prior to separation, is applied to a carrier with an adapted thermal expansion coefficient. The method is suitable in particular for semiconductor layers containing a nitride compound semiconductor.

摘要翻译： 一种用于制造半导体部件的方法，特别是薄膜部件，通过用具有平板空间光束轮廓的激光束照射与基板分离的半导体层。 此外，半导体层在分离之前被施加到具有适应的热膨胀系数的载体上。 该方法特别适用于含有氮化物半导体的半导体层。

公开(公告)号：US06770542B2

公开(公告)日：2004-08-03

申请号：US10324428

申请日：2002-12-20

申请人： Andreas Plössl ,  Berthold Hahn ,  Dominik Eisert ,  Stephan Kaiser

发明人： Andreas Plössl ,  Berthold Hahn ,  Dominik Eisert ,  Stephan Kaiser

IPC分类号： H01L2130

CPC分类号： H01L21/2007

摘要： A method is provided for fabricating a useful layer containing at least one semiconductor layer, in which the useful layer is separated from a carrier. In this case, the useful layer is applied to the carrier and an auxiliary carrier is applied to that side of the useful layer that is remote from the carrier by a connecting layer at a joining temperature. Afterward, the carrier is stripped away at a temperature that is greater than or equal to the joining temperature and is less than the melting point of the connecting layer. At least a part of the useful layer together with the auxiliary carrier is removed from the carrier.

摘要翻译： 提供了一种用于制造含有至少一个半导体层的有用层的方法，其中有用层与载体分离。 在这种情况下，将有用层施加到载体上，并且在接合温度下通过连接层将辅助载体施加到远离载体的有用层的该侧。 之后，载体在大于或等于接合温度的温度下剥离，并且小于连接层的熔点。 将有用层的至少一部分与辅助载体一起从载体上除去。