公开(公告)号：US20140014977A1

公开(公告)日：2014-01-16

申请号：US14001310

申请日：2012-02-24

Applicant: Helmut Fischer ,  Andreas Plössl

Inventor： Helmut Fischer ,  Andreas Plössl

IPC: H01L33/02 ,  H01L31/18 ,  H01L31/02

CPC classification number: H01L33/02 ,  H01L31/02 ,  H01L31/06875 ,  H01L31/18 ,  H01L31/1892 ,  H01L31/1896 ,  H01L33/0079 ,  H01L33/641 ,  H01L2924/0002 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/02476 ,  Y02E10/544 ,  Y02P70/521 ,  H01L2924/00

Abstract: An optoelectronic semiconductor device includes an optoelectronic semiconductor layer sequence on a metal carrier element, which includes as a first component silver and as a second component a material having a lower coefficient of thermal expansion than silver, wherein the first and second components are intermixed in the metal carrier element.

Abstract translation: 光电半导体器件包括在金属载体元件上的光电子半导体层序列，其包括作为第一组分银和作为第二组分的具有比银更低的热膨胀系数的材料，其中第一和第二组分混合在 金属载体元件。

公开(公告)号：US09076897B2

公开(公告)日：2015-07-07

申请号：US14001310

申请日：2012-02-24

Applicant: Helmut Fischer ,  Andreas Plössl

Inventor： Helmut Fischer ,  Andreas Plössl

IPC: H01L33/02 ,  H01L31/18 ,  H01L33/00 ,  H01L31/0687 ,  H01L31/02 ,  H01L33/64 ,  H01S5/02 ,  H01S5/024 ,  H01S5/022

CPC classification number: H01L33/02 ,  H01L31/02 ,  H01L31/06875 ,  H01L31/18 ,  H01L31/1892 ,  H01L31/1896 ,  H01L33/0079 ,  H01L33/641 ,  H01L2924/0002 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/02476 ,  Y02E10/544 ,  Y02P70/521 ,  H01L2924/00

Abstract: An optoelectronic semiconductor device includes an optoelectronic semiconductor layer sequence on a metal carrier element, which includes as a first component silver and as a second component a material having a lower coefficient of thermal expansion than silver, wherein the first and second components are intermixed in the metal carrier element.

Abstract translation: 光电半导体器件包括在金属载体元件上的光电子半导体层序列，其包括作为第一组分银和作为第二组分的具有比银更低的热膨胀系数的材料，其中第一和第二组分混合在 金属载体元件。

公开(公告)号：US07588998B2

公开(公告)日：2009-09-15

申请号：US10503042

申请日：2003-01-30

Applicant: Michael Fehrer ,  Berthold Hahn ,  Volker Härle ,  Stephan Kaiser ,  Frank Otte ,  Andreas Plössl

Inventor： Michael Fehrer ,  Berthold Hahn ,  Volker Härle ,  Stephan Kaiser ,  Frank Otte ,  Andreas Plössl

IPC: H01L21/30

CPC classification number: H01L21/76251 ,  B23K26/40 ,  B23K26/50 ,  B23K2103/172 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/2007 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29298 ,  H01L2224/83001 ,  H01L2224/8319 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/157 ,  H01L2924/15763 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

Abstract: A method for producing a semiconductor component, in particular a thin-film component, a semiconductor layer being separated from a substrate by irradiation with a laser beam having a plateaulike spatial beam profile. Furthermore, the semiconductor layer, prior to separation, is applied to a carrier with an adapted thermal expansion coefficient. The method is suitable in particular for semiconductor layers containing a nitride compound semiconductor.

Abstract translation: 一种用于制造半导体部件的方法，特别是薄膜部件，通过用具有平板空间光束轮廓的激光束照射与基板分离的半导体层。 此外，半导体层在分离之前被施加到具有适应的热膨胀系数的载体上。 该方法特别适用于含有氮化物半导体的半导体层。

公开(公告)号：US08761219B2

公开(公告)日：2014-06-24

申请号：US13002352

申请日：2009-08-05

Applicant: Vincent Grolier ,  Andreas Plössl

Inventor： Vincent Grolier ,  Andreas Plössl

IPC: H01S5/20

CPC classification number: H01L31/0224 ,  H01L31/02161 ,  H01L33/387 ,  H01L33/405

Abstract: An optoelectronic semiconductor chip includes a semiconductor body containing an active region, a mirror layer, and contact points arranged between the semiconductor body and the mirror layer and providing a spacing D between the semiconductor body and the mirror layer, whereby at least one cavity is formed between the mirror layer and the semiconductor body and the at least one cavity contains a gas.

Abstract translation: 光电子半导体芯片包括半导体本体，其包含有源区，镜层和布置在半导体本体与镜面层之间的接触点，并且在半导体本体与镜面层之间提供间隔D，从而形成至少一个空腔 在镜面层和半导体本体之间，并且至少一个空腔包含气体。

公开(公告)号：US20140145228A1

公开(公告)日：2014-05-29

申请号：US13825156

申请日：2011-09-15

Applicant: Bernd Böhm ,  Gertrud Kräuter ,  Andreas Plössl

Inventor： Bernd Böhm ,  Gertrud Kräuter ,  Andreas Plössl

IPC: H01L33/22 ,  H01L31/0236

CPC classification number: H01L33/22 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/054 ,  H01L33/44 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2933/0091 ,  Y02E10/52 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip includes an active layer with a first and a second major face, including a semiconductor material which emits or receives radiation when the semiconductor chip is in operation; a patterned layer including three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in a beam path of the radiation, wherein the patterned layer includes an inorganic-organic hybrid material.

Abstract translation: 光电子半导体芯片包括具有第一和第二主面的有源层，包括当半导体芯片工作时发射或接收辐射的半导体材料; 包括用于输出耦合或去耦辐射的三维图案并且布置在辐射的光束路径中的第一主面上的图案层，其中所述图案化层包括无机 - 有机杂化材料。

公开(公告)号：US08723207B2

公开(公告)日：2014-05-13

申请号：US13276024

申请日：2011-10-18

Applicant: Ulrich Jacob ,  Gertrud Kräuter ,  Andreas Plössl

Inventor： Ulrich Jacob ,  Gertrud Kräuter ,  Andreas Plössl

IPC: H01L33/46 ,  H01L33/56 ,  H01L33/32

CPC classification number: H01L33/46 ,  H01L33/32 ,  H01L33/42 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A radiation-emitting semiconductor component, having a layer structure which includes an active layer which, in operation, emits radiation with a spectral distribution, and electrical contacts for applying a current to the layer structure, includes a coating layer which at least partially surrounds the active layer and holds back a short-wave component of the emitted radiation.

Abstract translation: 具有层结构的辐射发射半导体部件包括在工作中发射具有光谱分布的辐射的有源层和用于向层结构施加电流的电触点的层结构，其包括至少部分地围绕 有源层并且阻止所发射的辐射的短波分量。

公开(公告)号：US20090302429A1

公开(公告)日：2009-12-10

申请号：US12301566

申请日：2007-05-16

Applicant: Andreas Plössl ,  Stefan Illek

Inventor： Andreas Plössl ,  Stefan Illek

IPC: H01L23/52 ,  H01L21/50

CPC classification number: H05K3/321 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/20 ,  H01L2224/26145 ,  H01L2224/27013 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10155 ,  H01L2924/10158 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/15788 ,  H01L2924/19043 ,  H05K2201/0373 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A device comprising a first component (5) having a first surface (6), a second component (8) having a second surface (9) and a connection layer (7) between the first surface (6) of the first component (5) and the second surface (9) of the second component (8), wherein the connection layer (7) comprises an electrically insulating adhesive and there is an electrically conductive contact between the first surface (6) of the first component (5) and the second surface (9) of the second component (8).

Abstract translation: 一种装置，包括具有第一表面（6）的第一部件（5），具有第二表面（9）的第二部件（8）和在第一部件（5）的第一表面（6）之间的连接层 ）和第二部件（8）的第二表面（9），其中连接层（7）包括电绝缘粘合剂，并且在第一部件（5）的第一表面（6）和 第二部件（8）的第二表面（9）。

公开(公告)号：US07109527B2

公开(公告)日：2006-09-19

申请号：US10344308

申请日：2001-08-08

Applicant: Stefan Illek ,  Andreas Plössl ,  Klaus Streubel ,  Walter Wegleiter ,  Ralph Wirth

Inventor： Stefan Illek ,  Andreas Plössl ,  Klaus Streubel ,  Walter Wegleiter ,  Ralph Wirth

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/10 ,  H01L33/30 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor chip, particularly a radiation-emitting semiconductor chip, comprises an active thin-film layer in which a photon-emitting zone is formed, and a carrier substrate for the thin-film layer is arranged at a side of the thin-film layer faces away from the emission direction and is connected to it. At least one cavity via which a plurality of mesas is fashioned at the boundary between carrier substrate and thin-film layer is fashioned in the active thin-film layer proceeding from the carrier substrate.

Abstract translation: 半导体芯片，特别是辐射发射半导体芯片，包括其中形成有光子发射区的有源薄膜层，并且用于薄膜层的载体衬底被布置在薄膜层的一侧 面向远离发射方向并连接到它。 在载体衬底和活性薄膜层之间形成至少一个通过其在载体衬底和薄膜层之间的边界处形成多个台面的空腔。

公开(公告)号：US09368698B2

公开(公告)日：2016-06-14

申请号：US14344235

申请日：2012-08-16

Applicant: Andreas Plössl

Inventor： Andreas Plössl

IPC: H01L21/00 ,  H01L33/50 ,  H01L33/00

CPC classification number: H01L33/505 ,  H01L33/005 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2933/0058 ,  Y10T29/49993 ,  Y10T428/24273 ,  H01L2924/00

Abstract: A converter plate adapted to be attached to a radiation-emitting semiconductor chip, the converter plate containing a base material made of glass in which a plurality of openings is arranged, in each of which a converter material is installed.

Abstract translation: 一种适于附接到发射辐射的半导体芯片的转换器板，所述转换器板包含其中布置有多个开口的由玻璃制成的基材，其中每个都安装有转换器材料。

公开(公告)号：US20150011037A1

公开(公告)日：2015-01-08

申请号：US14344235

申请日：2012-08-16

Applicant: Andreas Plössl

Inventor： Andreas Plössl

IPC: H01L33/50 ,  H01L33/00

CPC classification number: H01L33/505 ,  H01L33/005 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2933/0058 ,  Y10T29/49993 ,  Y10T428/24273 ,  H01L2924/00

Abstract: A converter plate adapted to be attached to a radiation-emitting semiconductor chip, the converter plate containing a base material made of glass in which a plurality of openings is arranged, in each of which a converter material is installed.

Abstract translation: 一种适于附接到发射辐射的半导体芯片的转换器板，所述转换器板包含其中布置有多个开口的由玻璃制成的基材，其中每个都安装有转换器材料。